公开(公告)号：US20030119221A1

公开(公告)日：2003-06-26

申请号：US10290920

申请日：2002-11-08

Applicant: Coventor, Inc.

Inventor： Shawn Jay Cunningham ,  Svetlana Tatic-Lucic

IPC: H01L021/00 ,  H01L029/82

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

Abstract translation: 三层梁MEMS器件及相关方法。 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 以及去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

公开(公告)号：US20030116848A1

公开(公告)日：2003-06-26

申请号：US10290779

申请日：2002-11-08

Applicant: Coventor, Inc.

Inventor： Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  Svetlana Tatic-Lucic

IPC: H01L023/48

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: MEMS Device Having A Trilayered Beam And Related Methods. According to one embodiment, a movable, trilayered microcomponent suspended over a substrate is provided and includes a first electrically conductive layer patterned to define a movable electrode. The first metal layer is separated from the substrate by a gap. The microcomponent further includes a dielectric layer formed on the first metal layer and having an end fixed with respect to the substrate. Furthermore, the microcomponent includes a second electrically conductive layer formed on the dielectric layer and patterned to define an electrode interconnect for electrically communicating with the movable electrode.

Abstract translation: 具有三层梁的MEMS器件及相关方法。 根据一个实施例，提供了悬挂在基板上的可移动的三层微型部件，并且包括图案化以限定可移动电极的第一导电层。 第一金属层通过间隙与基板分离。 微组件还包括形成在第一金属层上并具有相对于衬底固定的端部的电介质层。 此外，微组件包括形成在电介质层上并被图案化以限定用于与可动电极电连通的电极互连的第二导电层。

公开(公告)号：US20030079548A1

公开(公告)日：2003-05-01

申请号：US10280264

申请日：2002-10-24

Inventor： Michael D. Potter ,  Alexander E. Martens

IPC: G01L009/00

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81C2201/0109 ,  G01L9/0073 ,  G01L9/0075

Abstract: A pressure transducer system includes a housing with a chamber, a member with a stored electrical charge, and a pair of electrodes that are at least partially in alignment with each other. At least a portion of the chamber is at a reference pressure. The member is connected to the housing and extends across at least a portion of the chamber. Each of the pair of electrodes is connected to the housing and is spaced from and on substantially opposing sides of the member. The member is movable with respect to the pair of electrodes or one of the pair of electrodes is movable with respect to the member in response to a monitored pressure.

Abstract translation: 压力传感器系统包括具有室的壳体，具有存储的电荷的构件和至少部分地彼此对准的一对电极。 腔室的至少一部分处于参考压力。 该构件连接到壳体并且延伸穿过腔室的至少一部分。 一对电极中的每一个连接到壳体并与构件的基本上相对的两侧间隔开。 该构件相对于一对电极是可移动的，或者该对电极中的一个可响应于所监视的压力而相对于构件移动。

公开(公告)号：US20020110948A1

公开(公告)日：2002-08-15

申请号：US10011350

申请日：2001-11-12

Applicant: INTPAX, Inc.

Inventor： Liji Huang ,  Naiqian Han ,  Yahong Yao ,  Gaofeng Wang

IPC: H01L027/15 ,  H01L031/12 ,  H01L033/00 ,  H01L021/265 ,  H01L021/00

CPC classification number: B81C1/00047 ,  B81B2201/047 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00571 ,  B81C2201/0109 ,  B81C2201/0136

Abstract: The present invention discloses an electro-optical device support on a substrate. The electro-optical device includes a sacrificial layer disposed on the substrate having a chamber-wall region surrounding and defining an optical chamber. The electro-optical device further includes a membrane layer disposed on top of the sacrificial layer having a chamber-removal opening surrounding and defining an electric tunable membrane for transmitting an optical signal therethrough. The electrically tunable membrane disposed on top of the optical chamber surrounded by the chamber wall regions. The chamber-wall region is doped with iondopants for maintaining the chamber-wall region for removal-resistance under a chamber-forming process performed through the chamber-removal opening. In a preferred embodiment, the chamber-wall region is a doped silicon dioxide region with carbon or nitrogen. In another preferred embodiment, the chamber-wall region is a nitrogen ion-doped SiNxOy region. In another preferred embodiment, the optical chamber is an etched chamber formed by etching through the chamber removal opening for etching off an etch-enhanced region surrounded by an etch-resistant region constituting the chamber wall.

Abstract translation: 本发明公开了一种在基片上的电光装置支架。 电光装置包括设置在基板上的牺牲层，其具有围绕并限定光学室的室壁区域。 电光装置还包括设置在牺牲层顶部的膜层，其具有围绕并限定用于透射光信号的电可调膜的室去除开口。 设置在由室壁区域围绕的光学室的顶部上的电可调膜。 在室壁区域掺杂有离子掺杂剂，用于在通过室去除开口进行的室形成过程中保持室壁区域用于去除电阻。 在优选实施例中，室壁区域是具有碳或氮的掺杂二氧化硅区域。 在另一个优选的实施方案中，室壁区域是氮离子掺杂的SiN x O y区域。 在另一个优选实施例中，光学室是通过蚀刻通过室去除开口形成的蚀刻室，用于蚀刻由构成室壁的耐蚀刻区域围绕的蚀刻增强区域。

公开(公告)号：US20020096727A1

公开(公告)日：2002-07-25

申请号：US10026177

申请日：2001-12-20

Inventor： Frank Fischer ,  Lars Metzger

IPC: H01L029/82

CPC classification number: B81C1/00571 ,  B81B2201/0235 ,  B81B2203/033 ,  B81C2201/0109 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

Abstract: A micromechanical component and method for its manufacture, in particular an acceleration sensor or a rotational speed sensor, includes: function components suspended movably above a substrate; a first insulation layer provided above the substrate; a first micromechanical function layer including conductor regions provided above the first insulation layer; a second insulation layer provided above the conductor regions and above the first insulation layer; a third insulation layer provided above the second insulation layer; a second micromechanical function layer including first and second trenches provided above the third insulation layer, the second trenches extending to the third insulation layer above the conductor regions and the first trenches extending to a cavity beneath the movably suspended function components in the second micromechanical function layer.

Abstract translation: 用于其制造的微机械部件及其方法，特别是加速度传感器或转速传感器包括：可移动地悬挂在基板上方的功能部件; 设置在所述基板上方的第一绝缘层; 第一微机械功能层，包括设置在所述第一绝缘层上方的导体区域; 第二绝缘层，设置在所述导体区域上方并位于所述第一绝缘层之上; 设置在所述第二绝缘层上方的第三绝缘层; 第二微机械功能层，包括设置在所述第三绝缘层上方的第一沟槽和第二沟槽，所述第二沟槽延伸到所述导体区域上方的所述第三绝缘层，并且所述第一沟槽延伸到所述第二微机械功能层中的可移动悬挂的功能部件下面的空腔 。

公开(公告)号：US20010040250A1

公开(公告)日：2001-11-15

申请号：US09858092

申请日：2001-05-15

Applicant: Memscap

Inventor： Catherine Charrier ,  Eric Bouchon ,  Alain Campo ,  Guy Imbert ,  Francois Valentin ,  Laurent Basteres

IPC: H01L021/8234

CPC classification number: B81C1/00158 ,  B81B3/007 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/0197 ,  H01G5/16 ,  H01H1/0036

Abstract: Process for fabricating electronic components, of the variable capacitor or microswitch type, comprising a fixed plate (1) and a deformable membrane (20) which are located opposite each other, which comprises the following steps, consisting in: depositing a first metal layer on an oxide layer (2), said first metal layer being intended to form the fixed plate; depositing a metal ribbon (10, 11) on at least part of the periphery and on each side of the fixed plate (1), said ribbon being intended to serve as a spacer between the fixed plate (1) and the deformable membrane (20); depositing a sacrificial resin layer (15) over at least the area of said fixed plate (1); generating, by lithography, a plurality of wells in the surface of said sacrificial resin layer; depositing, by electrolysis, inside the wells formed in the sacrificial resin (15), at least one metal region intended to form the deformable membrane (20), this metal region extending between sections of the metal ribbon (10, 11) which are located on each side of said fixed plate (1); removing the sacrificial resin layer (15).

Abstract translation: 用于制造可变电容器或微型开关类型的电子部件的方法包括彼此相对定位的固定板（1）和可变形膜（20），其包括以下步骤：将第一金属层沉积在 氧化物层（2），所述第一金属层旨在形成所述固定板; 在固定板（1）的周边的至少一部分和每一侧上沉积金属带（10,11），所述带旨在用作固定板（1）和可变形膜（20）之间的间隔件 ）; 在所述固定板（1）的至少所述区域上沉积牺牲树脂层（15）; 通过光刻产生在所述牺牲树脂层的表面中的多个孔; 通过电解在形成在牺牲树脂（15）中的阱内沉积旨在形成可变形膜（20）的至少一个金属区域，该金属区域在位于金属带（10,11）的部分之间延伸 在所述固定板（1）的每一侧上; 去除牺牲树脂层（15）。

公开(公告)号：US06251699B1

公开(公告)日：2001-06-26

申请号：US09617175

申请日：2000-07-17

Applicant: Matthias Fuertsch ,  Michael Offenberg

Inventor： Matthias Fuertsch ,  Michael Offenberg

IPC: H01L2100

CPC classification number: B81C1/00666 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/0164 ,  B81C2201/0169

Abstract: A method for fabricating micromechanical components, which provides for depositing one or a plurality of sacrificial layers on a silicon substrate and, thereon, a silicon layer. In subsequent method steps, a structure is patterned out of the silicon layer, and the sacrificial layer is removed, at least under one section of the structure. The silicon layer is doped by an implantation process.

Abstract translation: 一种用于制造微机械部件的方法，其提供在硅衬底上以及其上的硅层上沉积一个或多个牺牲层。 在随后的方法步骤中，从硅层图案化结构，并且至少在该结构的一个部分处去除牺牲层。 通过注入工艺掺杂硅层。

公开(公告)号：US6109106A

公开(公告)日：2000-08-29

申请号：US126625

申请日：1998-07-30

Applicant: Paolo Ferrari ,  Benedetto Vigna ,  Pietro Montanini ,  Marco Ferrera

Inventor： Paolo Ferrari ,  Benedetto Vigna ,  Pietro Montanini ,  Marco Ferrera

IPC: G01P9/04 ,  B81B3/00 ,  G01C19/56 ,  G01P15/08 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L41/08

CPC classification number: H01L21/764 ,  B81C1/00246 ,  G01P15/0802 ,  G01P15/125 ,  H01L21/76202 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2201/0109 ,  B81C2201/0177 ,  B81C2203/0735 ,  B81C2203/0778 ,  G01P2015/0814

Abstract: A movable mass forming a seismic mass is formed starting from an epitaxial layer and is covered by a weighting region of tungsten which has high density. To manufacture the mass, buried conductive regions are formed in the substrate. Then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions are formed on the buried conductive regions so as to partially cover them. An epitaxial layer is then grown, using a nucleus region. A tungsten layer is deposited and defined and, using a silicon carbide layer as mask, the suspended structure is defined. Finally, the sacrificial region is removed, forming an air gap.

Abstract translation: 从外延层开始形成形成地震质量块的移动体，并且由具有高密度的钨的加权区域覆盖。 为了制造质量，在衬底中形成掩埋的导电区域。 然后，同时，在要形成可移动物体的区域中形成牺牲区域，并且在掩埋的导电区域上形成氧化物绝缘区域，以便部分地覆盖它们。 然后使用核区域生长外延层。 沉积和限定钨层，并且使用碳化硅层作为掩模，限定悬浮结构。 最后，去除牺牲区域，形成气隙。

公开(公告)号：US5970315A

公开(公告)日：1999-10-19

申请号：US943663

申请日：1997-10-03

Applicant: L. Richard Carley ,  Michael L. Reed ,  Gary K. Fedder ,  Suresh Santhanam

Inventor： L. Richard Carley ,  Michael L. Reed ,  Gary K. Fedder ,  Suresh Santhanam

IPC: G01B21/30 ,  B62D57/00 ,  B81B3/00 ,  B81B5/00 ,  B81B7/02 ,  B81C3/00 ,  G01N13/10 ,  G01N37/00 ,  G11B5/00 ,  G11B9/00 ,  G11B9/14 ,  H02N1/00 ,  H01L21/44

CPC classification number: H02N1/006 ,  B81C1/0015 ,  B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  G11B9/1445 ,  B81B2201/07 ,  B81B2201/12 ,  B81B2203/0361 ,  B81C2201/0109 ,  B81C2201/0132 ,  G11B2005/0002 ,  Y10S977/861 ,  Y10S977/881 ,  Y10S977/888 ,  Y10S977/89

Abstract: The present invention is directed to a process for fabricating a microelectromechanical device from a substrate carrying at least one layer of a non-erodible material laid out to form at least a portion of the microelectromechanical device, at least one layer of an erodible material, and at least one sacrificial layer. The process includes the step of using the layer of non-erodible material as a mask and anistropically etching any of the layer of erodible material not occluded by the layer of non-erodible material. The process also includes the step of isotropically etching the sacrificial layer under at least a beam portion of the microelectromechanical device to free the beam portion of the microelectromechanical device from the substrate.

Abstract translation: 本发明涉及从承载至少一层不可侵蚀材料的基底制造微机电装置的方法，其布置成形成至少一部分微机电装置，至少一层可侵蚀材料，以及 至少一个牺牲层。 该方法包括使用不可侵蚀材料层作为掩模的步骤，并且非理想地蚀刻不被不可侵蚀材料层遮挡的可侵蚀材料层中的任何一层。 该方法还包括在微电子机械装置的至少梁部分下各向同性地蚀刻牺牲层的步骤，以将微机电装置的束部分从衬底释放。

公开(公告)号：US5930594A

公开(公告)日：1999-07-27

申请号：US676631

申请日：1996-07-10

Applicant: Michel Vilain

Inventor： Michel Vilain

IPC: G01J5/20 ,  B81B3/00 ,  F15C5/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L49/00 ,  H01L21/00

CPC classification number: B81C1/00658 ,  B81B3/007 ,  F15C5/00 ,  G01J5/20 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/038

Abstract: A method of manufacturing elements of floating rigid microstructures and a device equipped with such elements.This method of manufacturing at least one element of a microstructure (104, 116) in a substrate including a stacking of a support layer (100), a layer (102) of sacrificial material and a structure layer (104) comprises the following steps:a) etching in the substrate a relief structure (108) with lateral sides (110a, 110b)b) formation of a so-called rigidity lining (116) on the lateral sides (110a, 110b),c) removal of the sacrificial material from the relief structure (108) in order to release the floating microstructure.

Abstract translation: 一种制造浮动刚性微结构元件的方法和装备有这些元件的装置。 制造包括支撑层（100），牺牲材料层（102）和结构层（104）的堆叠的衬底中的微结构（104,116）的至少一个元件的这种方法包括以下步骤： a）在衬底中蚀刻具有侧面（110a，110b）的凸版结构（108）b）在侧面（110a，110b）上形成所谓的刚性衬层（116），c）去除牺牲材料 从浮雕结构（108）释放浮动微结构。