公开(公告)号：US5926716A

公开(公告)日：1999-07-20

申请号：US829255

申请日：1997-03-31

Applicant: Dirk Tobben ,  Peter Weigand

Inventor： Dirk Tobben ,  Peter Weigand

IPC: H01L27/04 ,  B81B3/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/20

CPC classification number: B81C1/00111 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91 ,  B81C2201/0109 ,  B81C2201/0159 ,  H01L28/88 ,  H01L28/92

Abstract: A method for forming a microstructure includes photolithographically forming a vertically extending post on a portion of a surface of a substrate to provide a first structure. A flowable, sacrificial material is deposited over a surface of the first structure. The flowable, sacrificial materially flows off the top surface and sidewall portions of the post onto adjacent portions of the surface of the substrate to provide a second structure. A non-sacrificial material is deposited over a surface of the second structure. The non-sacrificial material is deposited to conform to the surface of the second structure. The non-sacrificial is deposited over the sacrificial material, over the sidewall portions and over the top surface of the post. The deposited sacrificial material is selectively removed while the non-sacrificial material remains to form a third structure with a horizontal member provided by the non-sacrificial material. The horizontal member is supported a predetermined distance above the surface of the substrate by a lower portion of the post. The flowable material is a flowable oxide, for example, hydrogensilsesquioxane glass, and the post has a width less than 20 .mu.m. The resulting structure, formed with a single photolithographic step, is used for supporting a capacitor deposited over it. The capacitor is formed as a sequence of deposition steps; i.e., depositing a first conductive layer over a surface of the support structure; depositing a dielectric layer over the conductive layer; and depositing a second conductive layer over the dielectric layer.

Abstract translation: 一种用于形成微结构的方法包括光刻地形成垂直延伸的柱体，以在衬底表面的一部分上提供第一结构。 可流动的牺牲材料沉积在第一结构的表面上。 可流动的牺牲物质地从柱的顶表面和侧壁部分流出到衬底的表面的相邻部分上以提供第二结构。 非牺牲材料沉积在第二结构的表面上。 沉积非牺牲材料以符合第二结构的表面。 非牺牲材料沉积在牺牲材料上，在侧壁部分上方并在柱的顶表面上方。 选择性地去除沉积的牺牲材料，同时非牺牲材料保留以形成具有由非牺牲材料提供的水平构件的第三结构。 水平构件通过柱的下部支撑在基板的表面上方预定距离。 可流动材料是可流动的氧化物，例如氢倍半硅氧烷玻璃，柱的宽度小于20μm。 用单个光刻步骤形成的所得结构用于支撑沉积在其上的电容器。 电容器形成为一系列沉积步骤; 即在支撑结构的表面上沉积第一导电层; 在导电层上沉积介电层; 以及在所述电介质层上沉积第二导电层。

公开(公告)号：US5854126A

公开(公告)日：1998-12-29

申请号：US829257

申请日：1997-03-31

Applicant: Dirk Tobben ,  Bruno Spuler ,  Martin Gutsche ,  Peter Weigand

Inventor： Dirk Tobben ,  Bruno Spuler ,  Martin Gutsche ,  Peter Weigand

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/12 ,  H05K1/00 ,  H05K3/06 ,  H05K3/22 ,  H05K3/24 ,  H01L21/469 ,  H01L21/312

CPC classification number: H05K3/061 ,  H01L21/32139 ,  H01L21/76838 ,  H05K1/0284 ,  H05K2201/09018 ,  H05K2203/0585

Abstract: A method for forming a plurality of electrically conductive wires on a substrate. The method includes forming a relatively non-planar metal layer over a surface of the substrate. A self-planarizing material is deposited over the metal layer. The self-planarizing material forms a planarization layer over the surface of the metal layer. The planarization layer has a surface relatively planar compared to the relatively non-planar metal layer. A photoresist layer is deposited over the surface of the planarization layer. The photoresist layer is patterned with a plurality of grooves to form a mask with such grooves exposing underling portions of the planarization layer. The photoresist mask is used as a mask to etch grooves in the exposed portions of the planarization layer and thereby form a second mask. The second mask exposes underling portions of the relatively non-planar metal layer. The second mask is used to etch grooves in the relatively non-planar conductive metal layer and thereby form the plurality of electrically conductive wires in the metal layer. The wires are separated from each other by the grooves formed in the relatively non-planar metal layer. The planarization layer is formed by a spinning-on an organic polymer, for example an organic polymer having silicon, or a flowable oxide, or a hydrogensilsequioxane, or divinyl-siloxane-benzocyclobutene. The metal layer is etched using reactive ion etching. The planarization layer is removed using a wet chemical etch.

Abstract translation: 一种在基板上形成多根导电线的方法。 该方法包括在衬底的表面上形成相对非平面的金属层。 自平面化材料沉积在金属层上。 自平面化材料在金属层的表面上形成平坦化层。 与相对非平面的金属层相比，平坦化层具有相对平坦的表面。 在平坦化层的表面上沉积光致抗蚀剂层。 用多个凹槽对光致抗蚀剂层进行图案化以形成掩模，该掩模具有暴露平坦化层的下部的这种凹槽。 光致抗蚀剂掩模用作掩模以蚀刻平坦化层的暴露部分中的凹槽，从而形成第二掩模。 第二掩模暴露相对非平面金属层的下层部分。 第二掩模用于蚀刻相对非平面导电金属层中的凹槽，从而在金属层中形成多个导电线。 电线通过在相对非平面的金属层中形成的凹槽彼此分离。 平坦化层是通过旋涂有机聚合物，例如具有硅的有机聚合物，或可流动的氧化物，或氢化二烷基锡，或二乙烯基 - 硅氧烷 - 苯并环丁烯等形成的。 使用反应离子蚀刻蚀刻金属层。 使用湿化学蚀刻去除平坦化层。