公开(公告)号：US09673269B2

公开(公告)日：2017-06-06

申请号：US13225451

申请日：2011-09-04

Applicant: Emmanuel Defay ,  Gwenaël Le Rhun ,  Aurélien Suhm

Inventor： Emmanuel Defay ,  Gwenaël Le Rhun ,  Aurélien Suhm

IPC: H01L21/02 ,  H01G4/005 ,  H01L49/02

CPC classification number: H01L28/55 ,  H01L21/02197 ,  H01L21/02282 ,  H01L28/40 ,  H01L28/65

Abstract: An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.

公开(公告)号：US09059677B2

公开(公告)日：2015-06-16

申请号：US13456026

申请日：2012-04-25

Applicant: Alexandre Reinhardt ,  Emmanuel Defay ,  Francois Perruchot

Inventor： Alexandre Reinhardt ,  Emmanuel Defay ,  Francois Perruchot

IPC: H03H9/25 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02 ,  H03H9/05 ,  H03H9/17 ,  H03H9/54 ,  H03H9/64

CPC classification number: H03H9/25 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02228 ,  H03H9/02622 ,  H03H9/02637 ,  H03H9/02669 ,  H03H9/02763 ,  H03H9/02803 ,  H03H9/0542 ,  H03H9/17 ,  H03H9/542 ,  H03H9/6403 ,  H03H2009/02165

Abstract: An electromechanical device having a resonator using acoustic waves propagating laterally within a piezoelectric plane resonant structure and electrodes on a face of said structure. The resonant structure comprises: a transduction region having a transduction length and generating acoustic waves; a free propagation region for the acoustic waves, adjacent to the transduction region and defined the plane of the transduction region; the resonant structure length being equal to an integer number of half-wavelengths, the resonance frequency of said resonator equaling the average propagation velocity of the wave within the structure divided by said wavelength, to adjust the quality factor of the resonator fixed by the length of the resonant structure and the coupling coefficient fixed by the ratio of the transduction length over the length of the resonant structure; the resonant structure defined by the assembly of the transduction region and the propagation region being laterally bounded by reflection regions.

Abstract translation: 一种机电装置，其具有使用在压电平面共振结构内横向传播的声波和在所述结构的面上的电极的谐振器。 谐振结构包括：具有转导长度并产生声波的转导区域; 用于声波的自由传播区域，邻近转导区域并限定换能区域的平面; 谐振结构长度等于半波长的整数，所述谐振器的谐振频率等于结构中的波的平均传播速度除以所述波长，以调整谐振器的质量因子固定的长度 谐振结构和耦合系数由谐振结构长度上的换能长度比固定; 由转导区域和传播区域的组装限定的共振结构由反射区域横向界定。

公开(公告)号：US08801274B2

公开(公告)日：2014-08-12

申请号：US13101478

申请日：2011-05-05

Applicant: Jean-Francois Mainguet ,  Alain Chambron ,  Bruno Charrat ,  Emmanuel Defay ,  Guy-Michel Parat

Inventor： Jean-Francois Mainguet ,  Alain Chambron ,  Bruno Charrat ,  Emmanuel Defay ,  Guy-Michel Parat

IPC: G01K3/04 ,  G01K7/00 ,  G01J5/10

CPC classification number: G06K9/0002 ,  G01J5/024 ,  G01J5/046 ,  G01J5/10 ,  G01J5/34 ,  G01J2005/0048 ,  G01K3/10 ,  G01K7/003 ,  G06K9/00053

Abstract: A transducer for transducing time-related temperature variations into a difference in potentials includes an upper conductive electrode designed to be exposed to a time-related temperature variation to be measured, a lower conductive electrode, and at least one layer of pyroelectric material based on a III-V nitride directly interposed between the upper and lower conductive electrodes to generate, between the upper and lower conductive electrodes, a difference in potentials corresponding to the temperature variation even in the absence of external mechanical stress.

Abstract translation: 用于将与时间有关的温度变化转换为电位差的换能器包括被设计为暴露于要测量的时间相关温度变化的上导电电极，下导电电极和至少一层基于 直接介于上下导电电极之间的III-V族氮化物，即使在没有外部机械应力的情况下，在上下导电电极之间产生与温度变化相对应的电位差。

公开(公告)号：US20120306322A1

公开(公告)日：2012-12-06

申请号：US13481476

申请日：2012-05-25

Applicant: Matthieu CUEFF ,  Emmanuel DEFAY ,  Gwenaël LE RHUN

Inventor： Matthieu CUEFF ,  Emmanuel DEFAY ,  Gwenaël LE RHUN

IPC: H01L41/04 ,  H01L41/24 ,  B05D5/12 ,  H01L41/047 ,  H01L41/18

CPC classification number: H01L41/29 ,  H01L41/0477 ,  H01L41/0478 ,  H01L41/0815

Abstract: An electrical component comprises a lead-based perovskite crystal material layer between a lower electrode on the surface of a substrate and an upper electrode, characterized in that the lower electrode comprises a stabilizing first layer made of a first material and a seeding second layer made of a second material, the first and second materials having the same chemical composition but different structural parameters and/or densities. A process for fabricating a component is also provided, in which the material with a perovskite structure may be PZT with a (100) or (111) orientation.

Abstract translation: 电气部件包括在基板表面的下电极和上电极之间的铅基钙钛矿晶体材料层，其特征在于，所述下电极包括由第一材料制成的稳定化第一层和由 第二材料，第一和第二材料具有相同的化学组成但不同的结构参数和/或密度。 还提供了一种制造组件的方法，其中具有钙钛矿结构的材料可以是具有（100）或（111）取向的PZT。

公开(公告)号：US20120145667A1

公开(公告)日：2012-06-14

申请号：US13314844

申请日：2011-12-08

Applicant: Bruno IMBERT ,  Emmanuel DEFAY ,  Chrystel DEGUET ,  Hubert MORICEAU ,  Mathieu PIJOLAT

Inventor： Bruno IMBERT ,  Emmanuel DEFAY ,  Chrystel DEGUET ,  Hubert MORICEAU ,  Mathieu PIJOLAT

IPC: B32B37/30 ,  C23F1/02 ,  B32B38/00 ,  B32B37/14

CPC classification number: H03H3/08 ,  B32B37/30 ,  H03H3/00 ,  H03H3/02 ,  H03H9/173 ,  H03H2003/021

Abstract: A process for fabricating an acoustic wave resonator comprising a suspended membrane comprising a piezoelectric material layer, comprises the following steps: production of a first stack comprising at least one layer of first piezoelectric material on the surface of a first substrate; production of a second stack comprising at least one second substrate; production of at least one non-bonding initiating zone by deposition or creation of particles of controlled sizes leaving the surface of one of said stacks endowed locally with projecting nanostructures before a subsequent bonding step; direct bonding of said two stacks creating a blister between the stacks, due to the presence of the non-bonding initiating zone; and, thinning of the first stack to eliminate at least the first substrate.

Abstract translation: 一种用于制造包括压电材料层的悬浮膜的声波谐振器的方法，包括以下步骤：在第一衬底的表面上制备包括至少一层第一压电材料的第一堆叠; 制备包括至少一个第二基底的第二叠层; 通过沉积或产生具有受控尺寸的颗粒的至少一个非结合起始区的产生，离开所述堆之一的表面在随后的结合步骤之前局部地赋予突出的纳米结构; 由于存在非结合起始区，所述两个堆叠的直接结合在堆叠之间产生泡罩; 以及使所述第一叠层变薄以至少消除所述第一衬底。

公开(公告)号：US08169771B2

公开(公告)日：2012-05-01

申请号：US12311529

申请日：2007-10-16

Applicant: Emmanuel Defay ,  Julie Guillan ,  Serge Blonkowski

Inventor： Emmanuel Defay ,  Julie Guillan ,  Serge Blonkowski

IPC: H01G4/06 ,  H01G4/10

CPC classification number: H01G4/1218 ,  H01G4/1254 ,  H01G4/33 ,  H01L27/016 ,  H01L28/40 ,  H01L28/56

Abstract: The dielectric of a capacitor is formed by superposition of at least two thin layers made from the same metal oxide, respectively in crystalline and amorphous form and respectively presenting quadratic voltage coefficients of capacitance of opposite signs. The respective thicknesses da and dc of the amorphous and crystalline thin layers comply with the following general formulas: d a = ɛ 0 ⁢ ɛ a C s ⁢ ⁢ 0 ⁢ ( 1 1 - ( ɛ c ɛ a ) 2 ⁢ γ a γ c ) ⁢ ⁢ and ⁢ ⁢ d c = ɛ 0 ⁢ ɛ c C s ⁢ ⁢ 0 ⁢ ( 1 1 - ( ɛ a ɛ c ) 2 ⁢ γ c γ a ) in which ∈0 corresponds to the electric constant, ∈c and ∈a correspond to the relative permittivity of the metal oxide respectively in crystalline form and in amorphous form, Cs0 corresponds to the total surface capacitance at zero field, and γc and γa correspond to the quadratic coefficient of capacitance with respect to the electric field of the metal oxide respectively in crystalline form and in amorphous form.

Abstract translation: 电容器的电介质通过分别由相同金属氧化物制成的至少两个薄层分别以结晶和非晶形式叠加并且分别呈现相反符号的电容的二次电压系数而形成。 无定型和结晶薄层的各自的厚度da和dc符合以下通式：da =εεεC s⁢0（1 1 - （εcεa）2γaγc） ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⁢⁢⁢⁢⁢⁢⁢⁢aɛɛɛɛɛɛɛɛɛɛ∈∈∈∈∈∈∈∈∈∈∈∈∈∈ 分别对应于金属氧化物的结晶形式和非晶形式的相对介电常数，Cs0对应于零场的总表面电容，γc和γa对应于相对于金属氧化物电场的电容的二次系数 分别为结晶形式和无定形形式。

公开(公告)号：US20120056299A1

公开(公告)日：2012-03-08

申请号：US13225451

申请日：2011-09-04

Applicant: Emmanuel DEFAY ,  Gwenaël LE RHUN ,  Aurélien SUHM

Inventor： Emmanuel DEFAY ,  Gwenaël LE RHUN ,  Aurélien SUHM

IPC: H01L29/92 ,  H01L21/02

CPC classification number: H01L28/55 ,  H01L21/02197 ,  H01L21/02282 ,  H01L28/40 ,  H01L28/65

Abstract: An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.

Abstract translation: 集成电容器包括被称为基于钙钛矿型结晶材料的功能介电材料的介电材料层，位于衬底表面处的称为底部电极的至少一个第一电极和称为顶部电极的至少一个第二电极 所述电极通过电绝缘材料层电绝缘，以允许顶部电极上的至少一个接触。 电绝缘材料由钙钛矿型非晶介质材料制成，其介电常数低于钙钛矿型结晶材料的介电常数。 接触由与电绝缘介电层水平面接触的蚀刻接触层形成，其表面平行于层的平面。 还提供了一种用于制造这种集成电容器的工艺。

公开(公告)号：US20110266594A1

公开(公告)日：2011-11-03

申请号：US13097686

申请日：2011-04-29

Applicant: Marc Aid ,  Emmanuel Defay ,  Aude Lefevre ,  Guy-Michel Parat

Inventor： Marc Aid ,  Emmanuel Defay ,  Aude Lefevre ,  Guy-Michel Parat

IPC: H01L29/12 ,  H01L21/20

CPC classification number: H01L21/31122 ,  H01L21/31105 ,  H01L41/316 ,  H01L41/332

Abstract: A method is disclosed, for producing a layer of AlN having substantially vertical sides relative to the surface of a substrate, comprising: the formation of an AlN growth layer on a substrate, the deposition of the AlN layer, on at least said growth layer, the formation of a mask layer over the AlN layer, at least one edge of which is aligned with at least one edge or side of the growth layer, in a plane which is substantially perpendicular to a surface of the substrate or a surface of the growth layer, the etching of the AlN layer.

Abstract translation: 公开了一种用于生产具有相对于衬底表面具有大致垂直侧面的AlN层的方法，包括：在衬底上形成AlN生长层，在至少所述生长层上沉积AlN层， 在AlN层上形成掩模层，该掩模层的至少一个边缘与生长层的至少一个边缘或一侧对准，该平面基本上垂直于基底的表面或生长的表面 层，蚀刻AlN层。

公开(公告)号：US20090325335A1

公开(公告)日：2009-12-31

申请号：US12488854

申请日：2009-06-22

Applicant: François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

Inventor： François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

IPC: H01L21/302 ,  H01L21/02

CPC classification number: B81C1/00595 ,  B81B2201/0271 ,  B81C2201/0109 ,  B81C2201/014

Abstract: The invention relates to a method of making a component from a heterogeneous substrate comprising first and second portions in at least one monocrystalline material, and a sacrificial layer constituted by at least one stack of at least one layer of monocrystalline Si situated between two layers of monocrystalline SiGe, the stack being disposed between said first and second portions of monocrystalline material, wherein the method consists in etching said stack by making: e) at least one opening in the first and/or second portion and the first and/or second layer of SiGe so as to reach the layer of Si; and f) eliminating all or part of the layer of Si.

Abstract translation: 本发明涉及一种从包含至少一种单晶材料中的第一和第二部分的异质衬底制备组分的方法，以及由位于两层单晶之间的至少一层单晶硅的至少一个叠层构成的牺牲层 SiGe，堆叠设置在单晶材料的第一和第二部分之间，其中该方法包括通过以下步骤蚀刻所述堆叠：e）在第一和/或第二部分中的至少一个开口，以及第一和/ SiGe，以达到Si层; 和f）消除Si的全部或部分层。

公开(公告)号：US09190599B2

公开(公告)日：2015-11-17

申请号：US12881955

申请日：2010-09-14

Applicant: Emmanuel Defay ,  Gwenaël Le Rhun

Inventor： Emmanuel Defay ,  Gwenaël Le Rhun

IPC: H01L41/31 ,  H01L41/08 ,  H01L41/09 ,  H01L41/053 ,  H01L41/25 ,  H01L41/43 ,  H01L41/317 ,  H01L41/47 ,  H01L41/29 ,  H01L41/318 ,  H01L41/314 ,  B41J2/14 ,  B41J2/16 ,  H01L41/047

CPC classification number: H01L41/0973 ,  B41J2/14233 ,  B41J2/161 ,  H01L41/047 ,  H01L41/053 ,  H01L41/25 ,  H01L41/29 ,  H01L41/314 ,  H01L41/317 ,  H01L41/318 ,  H01L41/43 ,  H01L41/47 ,  Y10T29/42 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49401

Abstract: In a process for fabricating a membrane, including, on a substrate, a thin-film multilayer including a film of piezoelectric material placed between a top electrode film and a bottom electrode film and an elastic film supporting said piezoelectric film, the process includes: determining at least one concavity/convexity curvature of said membrane along an axis parallel to the plane of the films so that at least one inflection point is defined, said point allowing a first region and a second region, corresponding to a concave part and a convex part or vice versa, to be isolated; depositing, on the surface of the substrate, a thin-film multilayer including at least one film of piezoelectric material, one bottom electrode film and one top electrode film; and structuring at least one of the electrode films to define at least said first membrane region, in which an electric field perpendicular to the plane of the films may be applied, and at least said second region, in which an electric field parallel to the plane of the films may be applied.

Abstract translation: 在制造膜的方法中，包括在基板上的包括放置在顶电极膜和底电极膜之间的压电材料膜的薄膜多层膜和支撑所述压电膜的弹性膜，所述方法包括：确定 所述膜沿着平行于所述膜的平面的轴线的至少一个凹凸曲率，使得至少一个拐点被限定，所述点允许对应于凹部和凸部的第一区域和第二区域 或反之亦然，被隔离; 在基板的表面上沉积包括至少一层压电材料薄膜，一个底部电极薄膜和一个顶部电极薄膜的薄膜多层膜; 并且构造至少一个所述电极膜以至少限定所述第一膜区域，其中可以施加垂直于所述膜的平面的电场，以及至少所述第二区域，其中平行于所述平面的电场 的膜可以被应用。