公开(公告)号：US20210036178A1

公开(公告)日：2021-02-04

申请号：US16966424

申请日：2019-01-14

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Dingyuan Lu ,  Roger Malik ,  Gang Xiong

IPC: H01L31/18 ,  H01L31/0296 ,  H01L31/073

Abstract: According to the embodiments provided herein, a method for doping an absorber layer can include contacting the absorber layer with an annealing compound. The annealing compound can include cadmium chloride and a group V salt comprising an anion and a cation. The anion, the cation, or both can include a group V element. The method can include annealing the absorber layer, whereby the absorber layer is doped with at least a portion of the group V element of the annealing compound.

公开(公告)号：US20200381567A1

公开(公告)日：2020-12-03

申请号：US16770388

申请日：2017-12-07

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015cm-3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.

公开(公告)号：US20190221685A1

公开(公告)日：2019-07-18

申请号：US16363499

申请日：2019-03-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/073

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

公开(公告)号：US20190148571A1

公开(公告)日：2019-05-16

申请号：US16245613

申请日：2019-01-11

Applicant: First Solar, Inc.

Inventor： Upali Jayamaha ,  Michael T. Steele ,  Syed Zafar

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0749

Abstract: A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.

公开(公告)号：US10056507B2

公开(公告)日：2018-08-21

申请号：US14740501

申请日：2015-06-16

Applicant: First Solar, Inc.

Inventor： Rui Shao ,  Markus Gloeckler

IPC: H01L31/18 ,  H01L31/073 ,  H01L31/0224

CPC classification number: H01L31/022466 ,  H01L31/022483 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1-xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1-xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1-xMgxO window layer.

公开(公告)号：US10038321B2

公开(公告)日：2018-07-31

申请号：US14872889

申请日：2015-10-01

Applicant: First Solar, Inc.

Inventor： Ranjan K. Gupta ,  Kevin G. Collins

IPC: H02J3/38 ,  H02J9/06 ,  H02M3/04 ,  H02M7/44

CPC classification number: H02J3/383 ,  H02J3/385 ,  H02J9/06 ,  H02M3/04 ,  H02M7/44 ,  Y02E10/58

Abstract: A system is disclosed for extracting a medium DC voltage from a plurality of PV modules arranged in an array and supplying the medium DC voltage to inverters located outside the array near a point of interconnection with a utility grid.

公开(公告)号：US20180083145A1

公开(公告)日：2018-03-22

申请号：US15708254

申请日：2017-09-19

Applicant: First Solar, Inc.

Inventor： Brian Cohen ,  David Hwang ,  Mark Lewis ,  Gopal Mor ,  Nathan Martin Schuh ,  Frank Xia ,  Yu Yang ,  Zhibo Zhao

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/02168 ,  G02B1/118 ,  G02B2207/107 ,  G02B2207/109 ,  H01L31/048 ,  H01L31/18

Abstract: Methods of curing anti-reflective coatings, and photovoltaic modules produced using the methods, are described. The methods can include liquid metal curing, plasma curing, air knife curing, and flame curing.

公开(公告)号：US20170133246A1

公开(公告)日：2017-05-11

申请号：US14981258

申请日：2015-12-28

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Markus Gloeckler ,  David Hwang ,  Rui Shao ,  Zhibo Zhao

IPC: H01L21/67 ,  H01L21/677 ,  H01L31/18 ,  H01L31/032

CPC classification number: H01L21/67109 ,  C23C14/086 ,  C23C14/5806 ,  H01L21/677 ,  H01L31/022466 ,  H01L31/0324 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method and apparatus for forming a crystalline cadmium stannate layer of a photovoltaic device by heating an amorphous layer in the presence of hydrogen gas.

公开(公告)号：US20170092803A1

公开(公告)日：2017-03-30

申请号：US15290054

申请日：2016-10-11

Applicant: FIRST SOLAR, INC.

Inventor： John Barden ,  Rick C. Powell

IPC: H01L31/18 ,  H01L31/046 ,  C23C16/448 ,  H01L31/0296

CPC classification number: H01L31/1828 ,  C23C14/228 ,  C23C14/24 ,  C23C14/243 ,  C23C14/56 ,  C23C16/448 ,  H01L21/02557 ,  H01L21/02562 ,  H01L31/02963 ,  H01L31/046 ,  Y02E10/543 ,  Y02P70/521

Abstract: An improved feeder system and method for continuous vapor transport deposition that includes at least two vaporizers couple to a common distributor through an improved seal for separately vaporizing and collecting at least any two vaporizable materials for deposition as a material layer on a substrate. Multiple vaporizer provide redundancy and allow for continuous deposition during vaporizer maintenance and repair.

公开(公告)号：US09564543B2

公开(公告)日：2017-02-07

申请号：US14546697

申请日：2014-11-18

Applicant: First Solar, Inc.

Inventor： Scott Daniel Feldman-Peabody ,  Robert Dwayne Gossman

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/073

CPC classification number: H01L31/0288 ,  H01L31/0203 ,  H01L31/022483 ,  H01L31/02963 ,  H01L31/0445 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/543

Abstract: Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).

Abstract translation: 提供了在薄膜光伏器件中掺杂p-n异质结的吸收层的方法。 该方法可以包括在透明衬底上沉积窗口层，其中窗口层包括至少一种掺杂剂（例如铜）。 可以在窗口层上形成p-n异质结，其中p-n异质结在吸收层中包括光电材料（例如碲化镉）。 掺杂剂然后可以从窗口层扩散到吸收层（例如，通过退火）。