公开(公告)号：US20110139985A1

公开(公告)日：2011-06-16

申请号：US13032050

申请日：2011-02-22

Applicant: Sayaka TANIMOTO ,  Hiroya OHTA ,  Hiroshi MAKINO ,  Ryuichi FUNATSU

Inventor： Sayaka TANIMOTO ,  Hiroya OHTA ,  Hiroshi MAKINO ,  Ryuichi FUNATSU

IPC: G01N23/225

CPC classification number: G01N23/225 ,  H01J37/265 ,  H01J37/28

Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.

Abstract translation: 一种能够实现多光束型半导体检查装置中具有各种性质的样品的高缺陷检测灵敏度和高检测速度的带电粒子束装置。 使样品上的一次光束的分配是可变的，此外，基于样品的性质选择用于以最佳检查规格和高速进行检查的光束分配。 此外，优化了许多光学参数和设备参数。 此外，测量和调整所选择的一次光束的性质。

公开(公告)号：US20110068267A1

公开(公告)日：2011-03-24

申请号：US12926489

申请日：2010-11-22

Applicant: Masaki HASEGAWA ,  Hiroya OHTA

Inventor： Masaki HASEGAWA ,  Hiroya OHTA

IPC: H01J37/26 ,  H01J37/29

CPC classification number: G01N23/225 ,  H01J37/026 ,  H01J37/285 ,  H01J37/29 ,  H01J2237/0047 ,  H01J2237/221 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/2482 ,  H01J2237/2855

Abstract: An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained. Moreover, an amount-of-ultraviolet ray adjustment mechanism is controlled on the monitor so that an amount of the ultraviolet rays is adjusted while observing a reflected-electron image obtained during ultraviolet irradiation.

公开(公告)号：US20100065753A1

公开(公告)日：2010-03-18

申请号：US12554577

申请日：2009-09-04

Applicant: Momoyo ENYAMA ,  Hiroya Ohta ,  Osamu Kamimura

Inventor： Momoyo ENYAMA ,  Hiroya Ohta ,  Osamu Kamimura

IPC: H01J3/16

CPC classification number: H01J37/153 ,  H01J37/1472 ,  H01J2237/151 ,  H01J2237/1534

Abstract: With a multi-beam type charged particle beam apparatus, and a projection charged particle beam apparatus, in the case of off-axial aberration corrector, there is the need for preparing a multitude of multipoles, and power supply sources in numbers corresponding to the number of the multipoles need be prepared. In order to solve this problem as described, a charged particle beam apparatus is provided with at least one aberration corrector wherein the number of the multipoles required in the past is decreased by about a half by disposing an electrostatic mirror in an electron optical system.

Abstract translation: 使用多光束型带电粒子束装置和投影带电粒子束装置，在离轴像差校正器的情况下，需要准备多个多极，并且与数字对应的数量的电源 的多极需要准备。 为了解决上述问题，带电粒子束装置设置有至少一个像差校正器，其中通过在电子光学系统中设置静电镜，过去所需的多极数减少约一半。

公开(公告)号：US07425714B2

公开(公告)日：2008-09-16

申请号：US11207710

申请日：2005-08-22

Applicant: Makoto Sakakibara ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Yasunari Sohda ,  Noriyuki Tanaka ,  Yasuhiro Someda

Inventor： Makoto Sakakibara ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Yasunari Sohda ,  Noriyuki Tanaka ,  Yasuhiro Someda

IPC: G21K5/10

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G01R19/0061 ,  H01J37/243 ,  H01J2237/30472

Abstract: A technology capable of reducing the influence of the noise overlapped in a long transmission line when accurately measuring weak beam current in an electron beam writing system and capable of accurately and efficiently measuring weak beam current in a beam writing system using multiple beams is provided. With using a switch for connecting and disconnecting an electron beam detecting device and a detected signal line, the electron beam detecting device is disconnected from the detected signal line to accumulate the detected signals in the electron beam detecting device during the beam current measurement. Simultaneously with the finish of the measurement, the electron beam detecting device and the detected signal line are connected to measure the accumulated signals. Also, in order to simultaneously perform the measurement method, a plurality of electron beam detecting devices and switches are used to simultaneously measure a plurality of electron beams with high accuracy.

Abstract translation: 提供了一种能够在精确测量电子束写入系统中的弱光束电流的同时减少重叠在长传输线上的噪声影响的技术，并且能够精确高效地测量使用多个光束的光束写入系统中的弱光束电流。 通过使用用于连接和断开电子束检测装置的开关和检测到的信号线，电子束检测装置与检测到的信号线断开，以在束电流测量期间将检测到的信号累积在电子束检测装置中。 在测量结束的同时，连接电子束检测装置和检测信号线来测量累积信号。 此外，为了同时进行测量方法，使用多个电子束检测装置和开关以高精度同时测量多个电子束。

公开(公告)号：US07423274B2

公开(公告)日：2008-09-09

申请号：US11355952

申请日：2006-02-17

Applicant: Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasunari Sohda ,  Masaki Hosoda

Inventor： Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasunari Sohda ,  Masaki Hosoda

IPC: A61N5/00

CPC classification number: H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/3045

Abstract: An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.

Abstract translation: 提供一种电子束写入技术，其能够对电子束写入系统中使用的微小场进行高精度的偏转校正。 在该系统中，通过偏转装置通过高速偏转扫描来移动电子束以便重复形成循环图案化电子束的功能，以及通过偏转装置通过偏转装置将图案化电子束移动到循环校正标记上的功能，通过 提供与重复的一个周期同步的低速偏转扫描，检测从校正标记及其附近发射的反射电子或二次电子或在低速偏转扫描中透过校正标记的透射电子，以便 基于检测结果校正电子束的位置或偏转量。

公开(公告)号：US06870310B2

公开(公告)日：2005-03-22

申请号：US10618008

申请日：2003-07-14

Applicant: Masahiko Okunuki ,  Hiroya Ohta ,  Norio Saito ,  Masaki Takakuwa ,  Sayaka Tanimoto ,  Takeshi Haraguchi

Inventor： Masahiko Okunuki ,  Hiroya Ohta ,  Norio Saito ,  Masaki Takakuwa ,  Sayaka Tanimoto ,  Takeshi Haraguchi

IPC: G03F7/20 ,  H01J1/46 ,  H01J3/02 ,  H01J29/46 ,  H01J37/06 ,  H01J37/07 ,  H01J37/09 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J3/027 ,  H01J3/029 ,  H01J37/07 ,  H01J37/09

Abstract: This invention provides a multielectron gun which generates a plurality of electron beams having uniform characteristics. A multielectron gun (2) is formed of a plurality of electron guns (2a-2c). The electron gun (2a) has, in addition to an electron source (21a), Wehnelt electrode (22a), and anode electrode (23), a shield electrode (24) between the Wehnelt electrode (22a) and anode electrode (23). The shield electrode reduces field interference among the electron guns.

Abstract translation: 本发明提供一种多电子枪，其产生具有均匀特性的多个电子束。 多电子枪（2）由多个电子枪（2a-2c）形成。 电子枪（2a）除了电子源（21a），Wehnelt电极（22a）和阳极电极（23）之外还具有在Wehnelt电极（22a）和阳极电极（23）之间的屏蔽电极（24） 。 屏蔽电极减少电子枪之间的场干扰。

公开(公告)号：US06870171B2

公开(公告)日：2005-03-22

申请号：US10806190

申请日：2004-03-23

Applicant: Masaki Hosoda ,  Masato Muraki ,  Hiroya Ohta ,  Haruo Yoda

Inventor： Masaki Hosoda ,  Masato Muraki ,  Hiroya Ohta ,  Haruo Yoda

IPC: G03F7/20 ,  H01J37/147 ,  H01J37/317 ,  H01L21/027 ,  H01J37/302 ,  H01J37/04 ,  H01J37/30

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/1471 ,  H01J37/3177 ,  H01J2237/30455

Abstract: An electron beam exposure apparatus which exposes a wafer (118) by using a plurality of electron beams corrects the positional error of the electron beams by using multi-deflector arrays (105, 106) capable of independently deflecting the positions of the electron beams, and pattern data to be projected onto the wafer (118). More specifically, when each of the electron beams is deflected to a predetermined exposure position on the basis of the pattern data, a static positional error independent of the deflection position is corrected by the multi-deflector arrays (105, 106), and a dynamic positional error depending on the deflection position is corrected on the basis of the pattern data.

Abstract translation: 通过使用多个电子束使晶片（118）曝光的电子束曝光装置通过使用能够独立地偏转电子束的位置的多偏转阵列（105,106）来校正电子束的位置误差，以及 图案数据被投影到晶片（118）上。 更具体地说，当基于图案数据将每个电子束偏转到预定曝光位置时，通过多偏转器阵列（105,106）校正与偏转位置无关的静态位置误差，并且动态 基于图案数据来校正取决于偏转位置的位置误差。

公开(公告)号：US20050029473A1

公开(公告)日：2005-02-10

申请号：US10909300

申请日：2004-08-03

Applicant: Masato Muraki ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Haruo Yoda ,  Norio Saitou

Inventor： Masato Muraki ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Haruo Yoda ,  Norio Saitou

IPC: G03F7/20 ,  H01J37/04 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  G01K1/08 ,  H01J3/14

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/317

Abstract: A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams comprises a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams, and a second measurement member for making the plurality of charged particle beams come incident and multiplying electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.

Abstract translation: 使用多个带电粒子束曝光基板的带电粒子束曝光装置包括使多个带电粒子束入射的第一测量部件和测量带电粒子束的总电流值，以及第二测量部件， 使多个带电粒子束入射并乘以每个入射带电粒子束的电子，从而测量每个带电粒子束的电流的相对值。

公开(公告)号：US06838682B2

公开(公告)日：2005-01-04

申请号：US10634878

申请日：2003-08-06

Applicant: Yasunari Sohda ,  Osamu Kamimura ,  Hiroya Ohta ,  Susumu Gotoh

Inventor： Yasunari Sohda ,  Osamu Kamimura ,  Hiroya Ohta ,  Susumu Gotoh

IPC: G03F7/20 ,  G03F9/02 ,  H01J37/04 ,  H01J37/141 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC classification number: H01J37/1471 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/1501

Abstract: There is provided an electron beam exposure technique which permits optical adjustment in an electron optics system using a doublet lens necessary for large field projection.Electron beam exposure equipment having a part forming one image by at least two electromagnetic lenses, has means measuring the position of an electron beam near an image plane with changing excitation of at least two lenses at the same time; and control means feeding back the measured result to aligners or the intensity of the lenses.

Abstract translation: 提供了一种使用电子光学系统进行光学调节的电子束曝光技术，该系统使用大场投影所需的双重透镜。具有通过至少两个电磁透镜形成一个图像的部分的电子束曝光设备具有测量位置 同时改变至少两个透镜的激发的图像平面附近的电子束; 并且控制装置将测量结果反馈到对准器或透镜的强度。

公开(公告)号：US6159644A

公开(公告)日：2000-12-12

申请号：US142077

申请日：1998-09-01

Applicant: Hidetoshi Satoh ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hiroya Ohta ,  Norio Saitou

Inventor： Hidetoshi Satoh ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hiroya Ohta ,  Norio Saitou

IPC: G03F7/20 ,  H01J37/304 ,  G03F9/00

CPC classification number: G03F7/70616 ,  G03F7/70433 ,  G03F7/70458 ,  G03F7/70633 ,  H01J37/3045 ,  H01J2237/3175 ,  Y10S430/143

Abstract: In a semiconductor circuit device fabricating process in which a reduction image projection exposure apparatus and an electron beam exposure apparatus are in a mixed use in its exposure process, pattern position shift errors for each exposure apparatus are measured and corrected at the time of drawing by means of an electron beam drawing apparatus, thereby enhancing the alignment accuracy.First, a pattern for measuring position shifts is exposed using a stepper and the electron beam drawing apparatus. Then, the position shift errors are measured using an identical coordinate position measuring device. Accidental errors have been mixed in the measurement result at this time. On account of this, measurement data at a certain point are smoothed by taking a summation average with data on the periphery thereof, thus decreasing influences of the accidental errors. Moreover, by inverting positive or negative signs of the data on the position shift errors, the data are made into correction data. Then, the correction data are stored. When an exposure is performed by the electron beam drawing apparatus with the pattern exposed by the stepper as a reference, the correction data for the two apparatuses are transferred to the electron beam drawing apparatus, the two data are added to detected mark positions, and at positions after the addition, pattern position shifts within a wafer surface are determined. At the time of exposure, the exposure is performed at positions obtained by subtracting the correction data from the determined pattern position shifts. This method makes it possible to correct both position shift errors within the wafer surface due to the stepper and position shift errors due to the electron beam drawing apparatus, thus allowing the alignment accuracy to be enhanced. Also, this result makes it possible to enhance yield for products in the fabricating process.