Abstract:
An interconnection substrate comprises an uppermost interconnection layer having a plurality of terminal pads located at positions corresponding to a plurality of solder bumps (external connection terminals) provided on a semiconductor element which is to be mounted on the interconnection substrate. The interconnection substrate also has a metal column formed on each of the terminal pads and has a resin film covering a side surface of the metal column. The interconnection substrate further has an insulating layer formed on the uppermost interconnection layer so that a gap is formed between the insulating layer and an outer peripheral surface of the resin film.
Abstract:
One embodiment provides a wiring substrate including: a core substrate having an insulative base member, the insulative base member having a first surface and a second surface, a plurality of linear conductors penetrating through the insulative base member from the first surface to the second surface; an inorganic material layer joined to at least one of the first surface and the second surface of the insulative base member; and a penetration line penetrating through the inorganic material layer, wherein one end of the penetration line is electrically connected to a corresponding part of the linear conductors, without intervention of a bump.
Abstract:
An event dependency management apparatus manages a first managed object at which a first event may occur, a second managed object at which a second event may occur in dependence upon the first event, and a third managed object at which a third event may occur in dependence upon the second event. The event dependency management apparatus includes a processor to calculate a difference between an occurrence time of the first event and an occurrence time of the third event, and determine that the third event has occurred in dependence upon the first event when the calculated difference is smaller than a predetermined time.
Abstract:
In a semiconductor device, a substrate includes a plurality of line conductors which penetrate the substrate from a top surface to a bottom surface of the substrate. A semiconductor chip is secured in a hole of the substrate. A first insulating layer is formed on the top surfaces of the substrate and the semiconductor chip. A first wiring layer is formed on the first insulating layer and electrically connected via through holes of the first insulating layer to the semiconductor chip and some line conductors exposed to one of the through holes. A second insulating layer is formed on the bottom surfaces of the substrate and the semiconductor chip. A second wiring layer is formed on the second insulating layer and electrically connected via a through hole of the second insulating layer to some line conductors exposed to the through hole.
Abstract:
There is provided a method of manufacturing a conductive film. The method includes: (a) providing an anodized layer having a plurality of through holes extending therethrough in its thickness direction; (b) forming a plurality of linear conductors by filling each of the through holes with a conductive material; (c) forming protection layers on both surfaces of the anodized layer; (d) removing the anodized layer to form a plurality of gaps between the linear conductors; (e) forming an organic insulation layer between the protection layers to fill the gaps with the organic insulation layer; and (f) removing the protection layers.
Abstract:
A method of producing a multilayered substrate having: a first face being provided with pads bondable to electrode terminals of a semiconductor element, and a body containing a plurality of wiring line layers and insulation layers successively formed from the side of the multilayered substrate at which the face for mounting a semiconductor element is located, wherein the final insulating layer forms provides a second face of the multilayered substrate. The successive wiring line layers are connected by vias, and the second face has external connection terminal pads. The pads on the first face are formed on a metal sheet, a first layer of insulating material is formed on the metal sheet so as to cover the pads formed thereon, holes are formed through the insulating material to expose the end face of the pad, and a patterned metal layer is formed to provide a layer of wiring lines and vias connecting the pads with the wiring line on the layer of insulating material. Subsequently, layers of insulation material are formed to cover the layers of wiring lines, where vias are formed in the insulating material layers, and then patterned metal wiring line layers and filled vias are formed, until the predetermined number of sets of an insulation layer and a wiring line layer is obtained. The metal sheet is then removed.
Abstract:
An alarm masking system is provided which is capable of implementing alarm priority processing or alarm inhibit processing in ATM transmission equipment. In ATM transmission equipment, a received virtual path or virtual channel is switched by means of a switching unit and then sent to an interface unit. In doing this, if a higher priority alarm is detected or received at a reception side interface unit, an intra-office tag is added to the alarm cell and then it is output, so that by detecting this intra-office tag it is possible to inhibit generation of lower priority alarms in response to the higher order alarm.
Abstract:
The present invention provides a process for purifying a polar vinyl compound, comprising pressurizing a crude polar vinyl compound containing impurities such as polymerization inhibiting substances and components of starting materials used in preparation of the polar vinyl compound to 500-3000 atm at 0.degree.-100.degree. C., the polar vinyl compound having at least one member selected from among oxygen, nitrogen and sulfur atoms, to thereby form crystals of the polar vinyl compound and separating the crystals of the polar vinyl compound from a liquid phase under pressure.
Abstract:
A thermal interface material includes a metal foil, which has a first surface and an opposite second surface, and a plurality of rod conductors each having a side surface extending in a thickness direction of the metal foil. The rod conductors are arranged on at least one of the first and second surfaces of the metal foil in a planar direction that is perpendicular to the thickness direction. A resin layer covers at least the first surface and the second surface of the metal foil and the side surfaces of the rod conductors.
Abstract:
One embodiment provides a wiring substrate including: a core substrate having an insulative base member, the insulative base member having a first surface and a second surface, a plurality of linear conductors penetrating through the insulative base member from the first surface to the second surface; an inorganic material layer joined to at least one of the first surface and the second surface of the insulative base member; and a penetration line penetrating through the inorganic material layer, wherein one end of the penetration line is electrically connected to a corresponding part of the linear conductors, without intervention of a bump.