公开(公告)号：US11810760B2

公开(公告)日：2023-11-07

申请号：US17349763

申请日：2021-06-16

Applicant: Applied Materials, Inc.

Inventor： Yang Yang ,  Yue Guo ,  Kartik Ramaswamy

IPC: H01J37/32

CPC classification number: H01J37/32128

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. Embodiments of the disclosure include an apparatus and method for generating a pulsed-voltage waveform that includes coupling a main voltage source to an electrode during a first phase of a process of generating a pulsed-voltage waveform, wherein the electrode is disposed within a processing chamber, coupling a ground node to the electrode during a second phase of the process of generating the pulsed-voltage waveform, coupling a first compensation voltage source to the electrode during a third phase of the process of generating the pulsed-voltage waveform, and coupling a second compensation voltage source to the electrode during a fourth phase of the process of generating the pulsed-voltage waveform.

公开(公告)号：US11784042B2

公开(公告)日：2023-10-10

申请号：US17961224

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Yang Yang ,  Pramit Manna ,  Kartik Ramaswamy ,  Takehito Koshizawa ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/26

CPC classification number: H01L21/02274 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/0332

Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

公开(公告)号：US10957518B2

公开(公告)日：2021-03-23

申请号：US16828694

申请日：2020-03-24

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Lawrence Wong ,  Steven Lane ,  Yang Yang ,  Srinivas D. Nemani ,  Praburam Gopalraja

IPC: H01J37/32 ,  H01H1/46

Abstract: A plasma reactor includes a processing chamber having a lower processing portion having an axis of symmetry and an array of cavities extending upwardly from the lower processing portion. A gas distributor couples plural gas sources to a plurality of gas inlets of the cavities, and the gas distributor includes a plurality of valves with each valve selectively connecting a respective gas inlet to one of the plural gas sources. Power is applied by an array of conductors that includes a respective conductor for each respective cavity with each conductor adjacent and surrounding a cavity. A power distributor couples a power source and the array of conductors, and the power distributor includes a plurality of switches with a switch for each respective conductor.

公开(公告)号：US10784085B2

公开(公告)日：2020-09-22

申请号：US14832280

申请日：2015-08-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Kenneth S. Collins ,  Steven Lane ,  Yang Yang ,  Lawrence Wong

IPC: H05H1/12 ,  H01J37/32

Abstract: An external magnetic filter to trap electrons surrounds a reactor chamber and has multiple magnets arranged in a circle, the magnetic orientation of each individual magnet being rotated relative to the orientation of the adjacent individual magnet by a difference angle that is a function of the arc subtended by the individual magnet.

公开(公告)号：US20160225590A1

公开(公告)日：2016-08-04

申请号：US14985688

申请日：2015-12-31

Applicant: Applied Materials, Inc.

Inventor： Joseph F. Aubuchon ,  Tza-Jing Gung ,  Travis Lee Koh ,  Nattaworn Nuntaworanuch ,  Sheng-Chin Kung ,  Steven Lane ,  Kartik Ramaswamy ,  Yang Yang

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/3211

Abstract: Embodiments described herein generally relate to plasma process apparatus. In one embodiment, the plasma process apparatus includes a plasma source assembly. The plasma source assembly may include a first coil, a second coil surrounding the first coil, and a magnetic device disposed outside the first and inside the second coil. The magnet enables additional tuning which improves uniformity control of the processes on the substrate.

Abstract translation: 本文描述的实施例一般涉及等离子体处理装置。 在一个实施例中，等离子体处理装置包括等离子体源组件。 等离子体源组件可以包括第一线圈，围绕第一线圈的第二线圈和设置在第二线圈的第一和内侧的磁性装置。 该磁体可实现额外的调谐，从而提高基板上工艺的均匀性控制。

公开(公告)号：US20140069584A1

公开(公告)日：2014-03-13

申请号：US13958875

申请日：2013-08-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Yang Yang ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Steven Lane ,  Douglas A. Buchberger, JR. ,  Lawrence Wong ,  Nipun Misra

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/6833

Abstract: A plasma reactor includes an RF-driven ceiling electrode overlying a process zone and two (or more) counter electrodes underlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy.

Abstract translation: 等离子体反应器包括覆盖工艺区域的RF驱动的天花板电极和处理区域下面的两个（或更多个）对置电极，并且面对处理区域的不同部分，连接在相应电极之间的两个（或更多个）可变电抗器 并控制控制可变电抗以控制诸如等离子体离子密度或离子能量之类的等离子体参数分布的控制器。

公开(公告)号：US20130277333A1

公开(公告)日：2013-10-24

申请号：US13842287

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Nipun Misra ,  Kartik Ramaswamy ,  Yang Yang ,  Douglas A. Buchberger, JR. ,  James D. Carducci ,  Lawrence Wong ,  Shane C. Nevil ,  Shahid Rauf ,  Kenneth S. Collins

IPC: C23F1/08 ,  C23C16/505

CPC classification number: C23F1/08 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32183

Abstract: In a plasma reactor having a driven electrode and a counter electrode, an impedance controller connected between the counter electrode and ground includes both series sand parallel variable impedance elements that facilitate two-dimensional movement of a ground path input impedance in a complex impedance space to control spatial distribution of a plasma process parameter.

Abstract translation: 在具有驱动电极和对电极的等离子体反应器中，连接在对电极和地之间的阻抗控制器包括两个串联的砂平行的可变阻抗元件，它们促进复阻抗空间中的接地路径输入阻抗的二维运动以控制 等离子体工艺参数的空间分布。

公开(公告)号：US12205797B2

公开(公告)日：2025-01-21

申请号：US18059222

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Yue Guo ,  Yang Yang ,  Fernando Silveira ,  A. N. M. Wasekul Azad

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems, and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having three MOSFETs and three series-connected capacitors. The capacitors are connected across a DC power supply and, depending on the value of the capacitors, voltage across each of them may be varied. Each of the top two capacitors is followed by a diode. The bottom capacitor is connected to the ground. The drain terminal of each MOSFET is connected to higher potential end of the series connected capacitors. Each MOSFET is followed by a diode and the cathode ends of the diodes are connected together. An electrode is connected between the common cathode and ground.

公开(公告)号：US12106938B2

公开(公告)日：2024-10-01

申请号：US17475223

申请日：2021-09-14

Applicant: Applied Materials, Inc.

Inventor： Yue Guo ,  Yang Yang ,  Kartik Ramaswamy

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/3299 ,  H01J2237/334

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for distortion current mitigation. An example plasma processing system includes a voltage source coupled to an input node, which is coupled to an electrode disposed within a processing chamber, wherein the voltage source is configured to generate a pulsed voltage signal at the input node; a signal generator having an output, wherein the RF signal generator is configured to deliver a first RF signal at a first RF frequency to the input node; a bandpass filter coupled between the output of the signal generator and the input node, wherein the bandpass filter is configured to attenuate second RF signals that are outside a range of frequencies including the first RF frequency of the first RF signal; and an impedance matching circuit coupled between the bandpass filter and the input node.

公开(公告)号：US11823868B2

公开(公告)日：2023-11-21

申请号：US17346103

申请日：2021-06-11

Applicant: Applied Materials, Inc.

Inventor： Yue Guo ,  Yang Yang ,  Kartik Ramaswamy

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32935 ,  H01J2237/3341

Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a radio-frequency (RF) generation system. The RF generation system generally includes an RF generator, and a vacuum interrupter configured to selectively decouple the RF generator from a bias electrode of a plasma chamber based on detection of a fault condition associated with operation of the plasma chamber.