公开(公告)号：US11450774B2

公开(公告)日：2022-09-20

申请号：US16628341

申请日：2018-07-06

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Hitoshi Kambara ,  Takashi Shinohe ,  Toshimi Hitora

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/47

Abstract: A semiconductor device with an enhanced semiconductor characteristics that is useful for power devices. A semiconductor device including: a semiconductor region; a barrier electrode arranged on the semiconductor region; and two or more adjustment regions of barrier height that are on a surface of the semiconductor region and arranged between the semiconductor region and the barrier electrode, the adjustment regions are configured such that barrier height at an interface between the adjustment regions and the barrier electrode is higher than barrier height at an interface between the semiconductor region and the barrier electrode.

公开(公告)号：US10930743B2

公开(公告)日：2021-02-23

申请号：US16020240

申请日：2018-06-27

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Takashi Shinohe ,  Toshimi Hitora

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/778 ,  H01L29/737 ,  H01L21/02 ,  H01L29/08 ,  H01L27/12 ,  C23C16/40 ,  H01L29/66 ,  C23C16/448 ,  H01L29/786 ,  C23C16/44

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer including an ε-phase crystalline oxide semiconductor with a first composition, and a second semiconductor layer including an ε-phase crystalline oxide semiconductor with a second composition that is different from the first composition of the first semiconductor layer, and the second semiconductor layer is layered on the first semiconductor layer.

公开(公告)号：US10535728B2

公开(公告)日：2020-01-14

申请号：US16245991

申请日：2019-01-11

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda

IPC: H01L29/04 ,  H01L21/02 ,  H01L29/24 ,  H01L29/786 ,  H01L21/477 ,  H01L29/26 ,  H01L29/66 ,  H01L29/861 ,  H01L29/872

Abstract: Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

公开(公告)号：US20190112703A1

公开(公告)日：2019-04-18

申请号：US16231042

申请日：2018-12-21

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Toshimi Hitora

IPC: C23C16/06 ,  H01L21/02 ,  C23C16/448 ,  C30B29/16 ,  C30B25/14 ,  C30B7/14 ,  C23C16/44 ,  C23C16/20 ,  C23C16/40

Abstract: There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.

公开(公告)号：US10202685B2

公开(公告)日：2019-02-12

申请号：US14233568

申请日：2013-11-11

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Toshimi Hitora

IPC: C23C16/06 ,  C30B7/14 ,  C30B25/14 ,  C23C16/40 ,  C30B29/16 ,  H01L21/02 ,  C23C16/20 ,  C23C16/44 ,  C23C16/448

Abstract: There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.

公开(公告)号：US20190043961A1

公开(公告)日：2019-02-07

申请号：US16159540

申请日：2018-10-12

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Rie Tokuda ,  Hitoshi Kambara ,  Katsuaki Kawara ,  Toshimi Hitora

IPC: H01L29/47 ,  H01L29/43 ,  H01L29/24 ,  H01L29/04 ,  H01L29/872 ,  H01L29/66 ,  H01L29/41 ,  H01L21/02

Abstract: A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.

公开(公告)号：US10128349B2

公开(公告)日：2018-11-13

申请号：US15381894

申请日：2016-12-16

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Rie Tokuda ,  Hitoshi Kambara ,  Katsuaki Kawara ,  Toshimi Hitora

IPC: H01L29/43 ,  H01L29/47 ,  H01L29/66 ,  H01L29/872 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41 ,  H01L21/02

Abstract: A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.

公开(公告)号：US20180226472A1

公开(公告)日：2018-08-09

申请号：US15945553

申请日：2018-04-04

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Toshimi Hitora ,  Tomohiro Yamaguchi ,  Tohru Honda

IPC: H01L29/24 ,  C30B29/16 ,  C01G15/00 ,  H01L29/04 ,  C30B29/40 ,  C30B29/22 ,  C30B25/18 ,  C30B25/02 ,  H01L29/12

CPC classification number: H01L29/24 ,  C01G15/00 ,  C01G15/006 ,  C01P2002/72 ,  C30B25/02 ,  C30B25/183 ,  C30B29/16 ,  C30B29/22 ,  C30B29/403 ,  H01L29/04 ,  H01L29/122

Abstract: A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice.

公开(公告)号：US09966439B2

公开(公告)日：2018-05-08

申请号：US14904042

申请日：2014-07-02

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Toshimi Hitora ,  Tomohiro Yamaguchi ,  Tohru Honda

IPC: H01L21/02 ,  C09K11/80 ,  H01L29/24 ,  C01G15/00 ,  C30B29/16 ,  C30B29/22 ,  C30B25/18 ,  C30B29/40 ,  C30B25/02 ,  H01L29/04 ,  H01L29/12

CPC classification number: H01L29/24 ,  C01G15/00 ,  C01G15/006 ,  C01P2002/72 ,  C30B25/02 ,  C30B25/183 ,  C30B29/16 ,  C30B29/22 ,  C30B29/403 ,  H01L29/04 ,  H01L29/122

Abstract: A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice.

公开(公告)号：US09828694B2

公开(公告)日：2017-11-28

申请号：US14838126

申请日：2015-08-27

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Toshimi Hitora

IPC: H01L21/288 ,  H01L29/45 ,  C30B19/00 ,  C23C16/18 ,  C23C16/448 ,  C03C17/10 ,  C30B29/02

CPC classification number: C30B19/00 ,  C03C17/10 ,  C03C2217/253 ,  C03C2218/112 ,  C23C16/18 ,  C23C16/4486 ,  C30B29/02 ,  H01L21/288 ,  H01L29/45

Abstract: Provided is a metal film forming method which can form a metal film having excellent adhesion industrially advantageously and a metal film formed by using the method. A method of forming a metal film on a base includes an atomization step of atomizing a raw-material solution into a mist, in which the raw-material is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, a chelating agent, or a protonic acid; a carrier-gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist onto the base using the carrier gas; and a metal-film formation step of forming the metal film on part or all of a surface of the base to causing the mist to thermally react.