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    Transportation device having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor
    23.
    发明授权
    Transportation device having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor 有权
    在半导体衬底上具有单片集成多传感器装置的运输装置及其方法

    公开(公告)号：US09327965B2

    公开(公告)日：2016-05-03

    申请号：US14207443

    申请日：2014-03-12

    Applicant: Versana Micro Inc.

    Inventor： Bishnu Prasanna Gogoi

    IPC: B81B7/02 ,  H01L27/14 ,  H01L27/22 ,  H01L27/16 ,  H05K7/02 ,  H01L41/113

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: A transportation device is provided having multiple sensors configured to detect and measure different parameters of interest. The transportation device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The transportation device couples a first parameter to be measured directly to the direct sensor. Conversely, the transportation device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the transportation device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

    Abstract translation: 提供了具有多个传感器的运输装置，其被配置为检测和测量不同的感兴趣的参数。 运输装置包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 运输装置将待测量的第一参数直接耦合到直接传感器。 相反，运输装置可间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上而将其它传感器添加到运输装置。 这支持集成多个传感器，如麦克风，加速度计和温度传感器，以降低成本，复杂性，简化组装，同时提高性能。

    Apparatus for Sensor with Communication Port for Configuring Sensor Characteristics and Associated Methods
    24.
    发明申请
    Apparatus for Sensor with Communication Port for Configuring Sensor Characteristics and Associated Methods 审中-公开
    具有通信端口的传感器装置，用于配置传感器特性和相关方法

    公开(公告)号：US20160116499A1

    公开(公告)日：2016-04-28

    申请号：US14520774

    申请日：2014-10-22

    Applicant: Silicon Audio Seismic, LLC

    Inventor： Charles D. Thompson

    IPC: G01P21/00 ,  B81B3/00 ,  B81B7/02 ,  G01D5/20 ,  G01B11/00

    CPC classification number: G01P21/00 ,  B81B3/0021 ,  B81B7/008 ,  B81B7/02 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2207/03 ,  G01B11/00 ,  G01D5/20 ,  G01D5/30 ,  G01P15/105 ,  G01P2015/0814

    Abstract: A sensor includes a coil suspended in a magnetic field, an optical detector to detect displacement of the coil in response to a stimulus, and a feedback circuit coupled to the optical detector and to the coil. The sensor further includes a serial communication port used to configure at least one characteristic of the sensor, wherein the at least one characteristic of the sensor comprises an overload point of the sensor, a gain of the sensor, a full-scale range of the sensor, a power consumption of sensor, sleep mode parameters of the sensor, a coil configuration of the sensor, and/or coil damping of the sensor.

    Abstract translation: 传感器包括悬挂在磁场中的线圈，用于响应于刺激来检测线圈的位移的光学检测器，以及耦合到光学检测器和线圈的反馈电路。 传感器还包括用于配置传感器的至少一个特征的串行通信端口，其中传感器的至少一个特性包括传感器的过载点，传感器的增益，传感器的满量程范围 ，传感器的功耗，传感器的睡眠模式参数，传感器的线圈配置和/或传感器的线圈阻尼。

    MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
    26.
    发明申请
    MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR 有权
    半导体基板上的单片集成多传感器器件及其方法

    公开(公告)号：US20140264657A1

    公开(公告)日：2014-09-18

    申请号：US14207419

    申请日：2014-03-12

    Applicant: BISHNU PRASANNA GOGOI

    Inventor： BISHNU PRASANNA GOGOI

    IPC: H01L27/02 ,  H01L29/66 ,  H01L43/12 ,  H01L27/22 ,  H01L27/14 ,  H01L31/18

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.

    Abstract translation: 公开了一种具有间接传感器和形成在公共半导体衬底上的直接传感器的集成电路。 直接传感器需要测量的参数直接应用于直接传感器。 相反，间接传感器可以将被测量的参数间接地应用于间接传感器。 由直接传感器测量的参数与由间接传感器测量的参数不同。 换句话说，直接传感器和间接传感器是不同的类型。 直接传感器的一个例子是压力传感器。 由压力传感器测量的压力必须应用于压力传感器。 间接传感器的一个例子是加速度计。 速度变化率不必直接应用于加速度计。 在一个实施例中，使用光刻技术形成直接和间接传感器。

    CMOS Integrated Moving-Gate Transducer with Silicon as a Functional Layer
    27.
    发明申请
    CMOS Integrated Moving-Gate Transducer with Silicon as a Functional Layer 有权
    具有硅功能层的CMOS集成移动门传感器

    公开(公告)号：US20140175525A1

    公开(公告)日：2014-06-26

    申请号：US14108901

    申请日：2013-12-17

    Applicant: Robert Bosch GmbH

    Inventor： Ando Feyh ,  Po-Jui Chen ,  Markus Ulm

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0021 ,  B81B2201/0221 ,  B81B2201/0228 ,  B81C1/00134 ,  B81C1/00246 ,  B81C2203/0771

    Abstract: A semiconductor device includes a substrate, a first dielectric layer located above the substrate, a moving-gate transducer, and a proof mass. The moving-gate transducer is at least partially formed within the substrate and is at least partially formed within the first dielectric layer. The proof mass includes a portion of the first dielectric layer and a portion of a silicon layer. The silicon layer is located above the first dielectric layer.

    Abstract translation: 半导体器件包括衬底，位于衬底上方的第一介电层，移动栅极换能器和校验块。 移动栅极换能器至少部分地形成在衬底内并且至少部分地形成在第一介电层内。 检测质量包括第一电介质层的一部分和硅层的一部分。 硅层位于第一介电层的上方。

    PROOF MASS OFFSET COMPENSATION
    28.
    发明申请
    PROOF MASS OFFSET COMPENSATION 审中-公开

    公开(公告)号：US20190212144A1

    公开(公告)日：2019-07-11

    申请号：US15868746

    申请日：2018-01-11

    Applicant: InvenSense, Inc.

    Inventor： Matthew Thompson

    IPC: G01C19/56 ,  B81B3/00

    CPC classification number: G01C19/56 ,  B81B3/0018 ,  B81B2201/0228 ,  G01C19/5712 ,  G01C19/5719 ,  G01C19/5733 ,  G01C19/574 ,  G01P15/125

    Abstract: A microelectromechanical (MEMS) sensor comprises MEMS components located within a MEMS layer and located relative to one or more electrodes. A plurality of proof masses are located within the MEMS layer and are not electrically coupled to each other within the MEMS layer. Both the first proof mass and the second proof mass move relative to at least a common electrode of the one or more electrodes, such that the relative position of each of the proof masses relative to the electrode may be sensed. A sensed parameter may be determined based on the sensed relative positions.

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