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    Low-parasitic capacitance MEMS inertial sensors and related methods
    21.
    发明授权
    Low-parasitic capacitance MEMS inertial sensors and related methods 有权

    公开(公告)号：US11746004B2

    公开(公告)日：2023-09-05

    申请号：US17668326

    申请日：2022-02-09

    Applicant: Analog Devices, Inc.

    Inventor： Charles Blackmer ,  Jeffrey A. Gregory ,  Nikolay Pokrovskiy ,  Bradley C. Kaanta

    IPC: B81C1/00 ,  G01C19/5755 ,  G01P15/08

    CPC classification number: B81C1/00063 ,  B81C1/00166 ,  G01C19/5755 ,  G01P15/0802 ,  B81B2201/0235 ,  B81B2201/0242

    Abstract: Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.

    Fully differential accelerometer
    22.
    发明授权
    Fully differential accelerometer 有权

    公开(公告)号：US11714102B2

    公开(公告)日：2023-08-01

    申请号：US17342484

    申请日：2021-06-08

    Applicant: Analog Devices, Inc.

    Inventor： Jianglong Zhang ,  Xin Zhang

    IPC: G01P15/125 ,  G01P15/18 ,  B81B3/00

    CPC classification number: G01P15/125 ,  B81B3/0021 ,  G01P15/18 ,  B81B2201/0235

    Abstract: Disclosed herein are aspects of a multiple-mass, multi-axis microelectromechanical systems (MEMS) accelerometer sensor device with a fully differential sensing design that applies differential drive signals to movable proof masses and senses differential motion signals at sense fingers coupled to a substrate. In some embodiments, capacitance signals from different sense fingers are combined together at a sensing signal node disposed on the substrate supporting the proof masses. In some embodiments, a split shield may be provided, with a first shield underneath a proof mass coupled to the same drive signal applied to the proof mass and a second shield electrically isolated from the first shield provided underneath the sense fingers and biased with a constant voltage to provide shielding for the sense fingers.

    ROBUST INERTIAL SENSOR SELF-TEST
    23.
    发明公开
    ROBUST INERTIAL SENSOR SELF-TEST 审中-公开

    公开(公告)号：US20230183058A1

    公开(公告)日：2023-06-15

    申请号：US17546928

    申请日：2021-12-09

    Applicant: InvenSense, Inc.

    Inventor： Aurelio Pellegrini

    IPC: B81B3/00 ,  G01P15/08

    CPC classification number: B81B3/0051 ,  G01P15/08 ,  B81B2201/0235 ,  B81B2201/0242 ,  G01P2015/0868

    Abstract: An inertial sensor such as a MEMS accelerometer or gyroscope has a proof mass that is driven by a self-test signal, with the response of the proof mass to the self-test signal being used to determine whether the sensor is within specification. The self-test signal is provided as a non-periodic self-test pattern that does not correlate with noise such as environmental vibrations that are also experienced by the proof mass during the self-test procedure. The sense output signal corresponding to the proof mass is correlated with the non-periodic self-test signal, such that an output correlation value corresponds only to the proof mass response to the applied self-test signal.

    Multi-mass MEMS motion sensor
    24.
    发明授权
    Multi-mass MEMS motion sensor 有权

    公开(公告)号：US11674803B2

    公开(公告)日：2023-06-13

    申请号：US15315894

    申请日：2015-01-12

    Applicant: Motion Engine Inc.

    Inventor： Robert Mark Boysel ,  Louis Ross

    IPC: G01C19/5712 ,  G01P15/18 ,  G01C19/5719 ,  G01P15/08 ,  G01P15/125 ,  G01C19/5733

    CPC classification number: G01C19/5712 ,  G01C19/5719 ,  G01C19/5733 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  B81B2201/0235 ,  G01P2015/084

    Abstract: A micro-electro-mechanical system (MEMS) motion sensor is provided that includes a MEMS wafer having a frame structure, a plurality of proof masses suspended to the frame structure, movable in three dimensions, and enclosed in one or more cavities. The MEMS sensor includes top and bottom cap wafers bonded to the MEMS wafer and top and bottom electrodes provided in the top and bottom cap wafers, forming capacitors with the plurality of proof masses, and being together configured to detect motions of the plurality of proof masses. The MEMS sensor further includes first electrical contacts provided on the top cap wafer and electrically connected to the top electrodes, and a second electrical contacts provided on the top cap wafer and electrically connected to the bottom electrodes by way of vertically extending insulated conducting pathways. A method for measuring acceleration and angular rate along three mutually orthogonal axes is also provided.

    Stiction reduction system and method thereof
    26.
    发明授权
    Stiction reduction system and method thereof 有权

    公开(公告)号：US11661332B2

    公开(公告)日：2023-05-30

    申请号：US16795514

    申请日：2020-02-19

    Applicant: InvenSense, Inc.

    Inventor： Daesung Lee ,  Ian Flader ,  Alan Cuthbertson ,  Emad Mehdizadeh

    IPC: H01L21/311 ,  B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/001 ,  B81C1/0092 ,  B81C1/0096 ,  B81C1/00341 ,  B81C1/00444 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2201/013 ,  B81C2201/115

    Abstract: Methods and systems for reducing stiction through roughening the surface and reducing the contact area in MEMS devices are disclosed. A method includes fabricating bumpstops on a surface of a MEMS device substrate to reduce stiction. Another method is directed to applying roughening etchant to a surface of a silicon substrate to enhance roughness after cavity etch and before removal of hardmask. Another embodiment described herein is directed to a method to reduce contact area between proof mass and UCAV (“upper cavity”) substrate surface with minimal impact on the cavity volume by introducing a shallow etch process step and maintaining high pressure in accelerometer cavity. Another method is described as to increasing the surface roughness of a UCAV substrate surface by depositing a rough layer (e.g. polysilicon) on the surface of the substrate and etching back the rough layer to transfer the roughness.

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