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公开(公告)号：US20180216959A1
公开(公告)日：2018-08-02
申请号：US15505923
申请日：2014-09-01
Applicant: Beijing Noitom Technology Ltd.
Inventor： Ruoli Dai , Haoyang Liu , Longwei Li , Jinzhou Chen , Baojia Gui
CPC classification number: G01C25/005 , B81B7/02 , B81B7/04 , B81B2201/0235 , B81B2201/0242 , G01C21/10 , G06F3/011 , G06F3/0346
Abstract: A combined motion capturing system comprises multiple inertial sensor units (101), at least one communication unit (102), and a terminal processor (103). The inertial sensor units (101) are connected to the communication unit (102). The communication unit (102) is connected to the terminal processor (103). The inertial sensor units (101) are mounted at positions of one or more motion capture objects according to different combination modes, and measure motion information of the positions where the inertial sensor units (101) are mounted, and send the motion information to the communication unit (102). The communication unit (102) receives the motion information output by inertial sensors, and sends the motion information to the terminal processor (103). The terminal processor (103) acquires information about the motion capture objects and mounting position information of the inertial sensor units (101), generates combination modes of the inertial sensor units (101) according to the information of the motion capture objects and the mounting position information, receives the motion information sent by the communication unit (102), and processes the received motion information according to the combination modes to acquire complete postures and the motion information of the motion capture objects. By freely combining the same set of motion capturing devices, different motion capturing objectives are achieved, and the cost is reduced.
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公开(公告)号：US10035699B2
公开(公告)日：2018-07-31
申请号：US15534477
申请日：2015-12-10
Applicant: Robert Bosch GmbH
Inventor： Ashwin K. Samarao , Gary O'Brien , Ando Feyh
CPC classification number: B81B7/0038 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81C1/00285
Abstract: A method of fabricating a MEMS device includes depositing an expandable material into a first recess of a cap wafer. The cap wafer includes a plurality of walls that surround and define the first recess and a second recess. The cap wafer is bonded to a MEMS wafer including a first MEMS device and a second MEMS device. The first MEMS device is encapsulated in the first recess, and the second MEMS device is encapsulated in the second recess. The expandable material is then heated to at least an activation temperature to cause the expandable material to expand after the first recess has been sealed. The expansion of the expandable material causes a reduction in volume of the first recess.
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公开(公告)号：US20180186623A1
公开(公告)日：2018-07-05
申请号：US15911133
申请日：2018-03-04
Applicant: Kris Vossough , Farhang Yazdani
Inventor： Kris Vossough , Farhang Yazdani
IPC: B81B3/00 , G01C19/5712 , G01P15/08 , G01L9/00 , G01N33/00 , H01L29/06 , H01L29/84 , H04R19/04 , H04R19/00
CPC classification number: B81B3/0021 , B81B2201/0214 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2203/0118 , B81B2203/0127 , B82Y15/00 , G01C19/5712 , G01C19/5783 , G01L9/0042 , G01N33/0027 , G01P15/0802 , G01P15/124 , H01L29/0669 , H01L29/0673 , H01L29/16 , H01L29/1608 , H01L29/20 , H01L29/775 , H01L29/84 , H01L51/0048 , H04R19/005 , H04R19/04 , H04R23/006 , H04R2201/003
Abstract: This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor, multi-axis gyroscope or accelerometer. The sensor uses a variety of different Field Effect Transistor technologies (horizontal, vertical, Si nanowire, CNT, SiC and III-V semiconductors) in conjunction with MEMS based structures such as cantilevers, membranes and proof masses integrated into silicon substrates. It also describes a configurable method for tuning the integrated system to specific resonance frequency using electronic design.
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公开(公告)号：US20180170747A1
公开(公告)日：2018-06-21
申请号：US15576510
申请日：2015-06-26
Applicant: INTEL CORPORATION
Inventor： HAN WUI THEN , SANSAPTAK DASGUPTA , SANAZ K. GARDNER , RAVI PILLARISETTY , MARKO RADOSAVLJEVIC , SEUNG HOON SUNG , ROBERT S. CHAU
CPC classification number: B81C1/00246 , B81B3/0021 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81C2203/0714 , G01L1/18
Abstract: Techniques are disclosed for forming group III material-nitride (III-N) microelectromechanical systems (MEMS) structures on a group IV substrate, such as a silicon, silicon germanium, or germanium substrate. In some cases, the techniques include forming a III-N layer on the substrate and optionally on shallow trench isolation (STI) material, and then releasing the III-N layer by etching to form a free portion of the III-N layer suspended over the substrate. The techniques may include, for example, using a wet etch process that selectively etches the substrate and/or STI material, but does not etch the III-N material (or etches the III-N material at a substantially slower rate). Piezoresistive elements can be formed on the III-N layer to, for example, detect vibrations or deflection in the free/suspended portion of the III-N layer. Accordingly, MEMS sensors can be formed using the techniques, such as accelerometers, gyroscopes, and pressure sensors, for example.
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公开(公告)号：US20180148329A1
公开(公告)日：2018-05-31
申请号：US15568140
申请日：2016-04-20
CPC classification number: B81C1/00682 , B81B3/0021 , B81B3/0094 , B81B7/0006 , B81B2201/0235 , B81B2201/0242 , B81B2203/0163 , B81C1/00142 , B81C1/00301
Abstract: An integrated circuit and the method to produce the integrated circuit comprising: a substrate (10); active devices (11); plurality of metal layers (17), wherein said metal layers are separated by dielectric layers (13) and connected to each other by plurality of vias (19); at least one micromechanical region (15) wherein some of the dielectric layers are removed leaving hollow spaces (23), thereby some of said metal and via layers form a micromechanical device in said micromechanical region, wherein said micromechanical device comprises at least one multi-layer structure (165) that is built of a plurality of metal layers and at least one via layer and said multi-layer structure is characterised by that at least two metal layers of said multi-layer structure are joined by at least one modified via (41).
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Patent Agency Ranking
26.发明申请公开(公告)号：US20180148325A1
公开(公告)日：2018-05-31
申请号：US15591652
申请日：2017-05-10
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Enri Duqi , Lorenzo Baldo , Domenico Giusti
CPC classification number: B81C1/00238 , B81B7/0051 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2203/0118 , B81B2203/0127 , B81B2203/0315 , B81B2207/012 , B81B2207/07 , B81C2201/0133 , B81C2203/032 , B81C2203/035 , B81C2203/0792
Abstract: An integrated device includes: a first die; a second die coupled in a stacked way on the first die along a vertical axis; a coupling region arranged between facing surfaces of the first die and of the second die, which face one another along the vertical axis and lie in a horizontal plane orthogonal to the vertical axis, for mechanical coupling of the first and second dies; electrical-contact elements carried by the facing surfaces of the first and second dies, aligned in pairs along the vertical axis; and conductive regions arranged between the pairs of electrical-contact elements carried by the facing surfaces of the first and second dies, for their electrical coupling. Supporting elements are arranged at the facing surface of at least one of the first and second dies and elastically support respective electrical-contact elements.
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公开(公告)号：US20180120110A1
公开(公告)日：2018-05-03
申请号：US15856616
申请日：2017-12-28
Applicant: SHIN SUNG C&T CO., LTD.
Inventor： Ci Moo Song , Keun Jung Youn , Jeong Sik Kang , Yong Kook Kim , Seung Ho Han , Hyun Ju Song
IPC: G01C19/5747 , G01C19/5621 , G01C19/5712 , B81B7/02 , G01C19/5769
CPC classification number: G01C19/5747 , B81B3/0051 , B81B7/02 , B81B2201/0242 , G01C19/5621 , G01C19/5712 , G01C19/5769
Abstract: Provided is a MEMS anti-phase link mechanism for ensuring anti-phase movements of two axisymmetric mass body units forming a sensor mass body, in a MEMS-based gyroscope including: a frame disposed to be parallel to a bottom wafer substrate; the sensor mass body in which displacement is sensed by Coriolis force when a movement in an excitation direction and an external angular velocity are input to the frame; and at least one sensing electrode which senses the displacement of the sensor mass body. The MEMS anti-phase link mechanism includes at least two anchor connecting parts connected to an immovable central anchor; and at least two link arms which are connected to the at least two anchor connecting parts, and are connected to the two mass body units in a 180-degree rotational symmetry with each other on the basis of the center of the MEMS anti-phase link mechanism.
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公开(公告)号：US20180118558A1
公开(公告)日：2018-05-03
申请号：US15636380
申请日：2017-06-28
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Enri DUQI , Mikel AZPEITIA URQUIA , Lorenzo BALDO
CPC classification number: B81B3/0021 , B81B7/0077 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2207/012 , B81C1/00158 , B81C1/00269 , H04R19/005 , H04R19/04
Abstract: Method of manufacturing a transducer module, comprising the steps of: forming, on a substrate, a first MEMS transducer, in particular a gyroscope, and a second MEMS transducer, in particular an accelerometer, having a suspended membrane; forming, on the substrate, a conductive layer and defining the conductive layer in order to provide, simultaneously, at least one conductive strip electrically coupled to the first MEMS transducer and the membrane of the second MEMS transducer.
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公开(公告)号：US09884758B2
公开(公告)日：2018-02-06
申请号：US15182754
申请日：2016-06-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shyh-Wei Cheng , Hsi-Cheng Hsu , Hsin-Yu Chen , Ji-Hong Chiang , Jui-Chun Weng , Wei-Ding Wu , Yu-Jui Wu , Ching-Hsiang Hu , Ming-Tsung Chen
CPC classification number: B81C1/00285 , B81B7/0038 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/07 , B81C2203/0118 , B81C2203/0792
Abstract: The present disclosure relates to a MEMS package having an outgassing element configured to adjust a pressure within a hermetically sealed cavity by inducing outgassing of into the cavity, and an associated method. In some embodiments, the method is performed by forming an outgassing element within a passivation layer over a CMOS substrate and forming an outgassing resistive layer to cover the outgassing element. The outgassing resistive layer is removed from over the outgassing element, and the MEMS substrate is bonded to a front side of the CMOS substrate to enclose a first MEMS device within a first cavity and a second MEMS device within a second cavity. After removing the outgassing resistive layer, the outgassing element releases a gas into the second cavity to increase a second pressure of the second cavity to be greater than a first pressure of the first cavity.
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公开(公告)号：US20180023952A1
公开(公告)日：2018-01-25
申请号：US15720160
申请日：2017-09-29
Inventor： Ahmed KAMAL SAID ABDEL AZIZ , Abdel Hameed SHARAF , Mohamed Yousef SERRY , Sherif Salah SEDKY
IPC: G01C19/5719 , B81B3/00 , G01P15/125 , G01P15/08 , G01P15/18
CPC classification number: G01C19/5719 , B81B3/0062 , B81B2201/0242 , G01P15/08 , G01P15/0802 , G01P15/125 , G01P15/18 , G01P2015/082
Abstract: MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) using an out-of-plane (or vertical) suspension scheme, wherein the suspensions are normal to the proof mass, are disclosed. Such out-of-plane suspension scheme helps such MEMS mass-spring-damper systems achieve inertial grade performance. Methods of fabricating out-of-plane suspensions in MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) are also disclosed.
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