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    Method for electrochemical fabrication
    21.
    发明授权
    Method for electrochemical fabrication 有权
    电化学制造方法

    公开(公告)号：US06475369B1

    公开(公告)日：2002-11-05

    申请号：US09487408

    申请日：2000-01-18

    Applicant: Adam L. Cohen

    Inventor： Adam L. Cohen

    IPC: C25D502

    CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

    Abstract: An electroplating method includes forming a layer, the forming of the layer includes: a) contacting a substrate with a first article, the first article includes a support and a conformable mask disposed in a pattern on the support; b) electroplating a first metal from a source of metal ions onto the substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the substrate. The method may further involve one or more of (1) selectively depositing or non-selectively depositing one or more additional materials to complete formation of the layer, (2) planarizing deposited material after each deposition or after all depositions for a layer, and/or (3) forming layers adjacent previously formed layers to build up a structure from a plurality of adhered layers. Electroplating articles and electroplating apparatus are also disclosed.

    Abstract translation: 一种电镀方法包括形成层，所述层的形成包括：a）使基底与第一制品接触，所述第一制品包括以支持物的形式设置的支撑体和适形掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述衬底上，所述第一图案对应于所述适形掩模图案的所述补体; 以及c）从所述基底中去除所述第一制品。 该方法还可以包括以下一个或多个：（1）选择性地沉积或非选择性地沉积一种或多种附加材料以完成层的形成，（2）在每次沉积之后或在所有沉积之后平坦化沉积的材料，以及/ 或（3）形成与先前形成的层相邻的层，以从多个附着层建立结构。 还公开了电镀制品和电镀装置。

    Attachment Method for Microfluidic Device
    24.
    发明公开
    Attachment Method for Microfluidic Device 审中-公开

    公开(公告)号：US20230364604A1

    公开(公告)日：2023-11-16

    申请号：US18105936

    申请日：2023-02-06

    Applicant: PhysioLogic Devices, Inc.

    Inventor： Peter C. Lord

    IPC: B01L3/00 ,  F04B43/04 ,  B81C3/00 ,  A61M5/142

    CPC classification number: B01L3/502707 ,  F04B43/043 ,  B01L3/502715 ,  B81C3/001 ,  A61M5/14276 ,  B81C2201/0181 ,  A61M2205/0244 ,  B01L2400/0487

    Abstract: In embodiments, a silicon part and a titanium part may be soldered together without breakage or instability. In embodiments, silicon and titanium may be soldered together with a soft solder joint including indium silver, where the temperature excursion between solder solidus and use temperature limits the strain between the two surfaces. In embodiments a silicon micropump surface may be treated to remove its silicon oxide coating, and then Ti—W, Nickel, and gold layers successively sputtered onto it. A corresponding titanium manifold may be ground flat, and plated with electroless nickel. The nickel plated manifold may then be baked, so as to create a transition from pure Ti to Ni—Ti alloy to pure Ni at the surface of the manifold, and for protection of the upper Ni surface, a layer of gold may be added. The two surfaces may then be soldered in forming gas.

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