公开(公告)号：US20060272772A1

公开(公告)日：2006-12-07

申请号：US11425974

申请日：2006-06-22

Applicant: Amir Al-Bayati ,  Lester D'Cruz ,  Alexandros Demos ,  Dale Dubois ,  Khaled Elsheref ,  Naoyuki Iwasaki ,  Hichem M'Saad ,  Juan Rocha-Alvarez ,  Ashish Shah ,  Takashi Shimizu

Inventor： Amir Al-Bayati ,  Lester D'Cruz ,  Alexandros Demos ,  Dale Dubois ,  Khaled Elsheref ,  Naoyuki Iwasaki ,  Hichem M'Saad ,  Juan Rocha-Alvarez ,  Ashish Shah ,  Takashi Shimizu

IPC: C23F1/00 ,  B44C1/22

CPC classification number: H01J37/317 ,  B23K15/00 ,  C23F4/00 ,  H01J37/026 ,  H01J37/20 ,  H01J2237/004 ,  H01J2237/0044 ,  H01J2237/2001 ,  H01J2237/304 ,  H01J2237/3156 ,  H01J2237/316 ,  H01J2237/3165 ,  H01L21/67115

Abstract: Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.

Abstract translation: 提供了用于基板的电子束处理的方法和装置。 提供了一种电子束装置，其包括真空室，至少一个与真空室连通的热电偶组件，与真空室连通的加热装置及其组合。 在一个实施例中，真空室包括电子源，其中电子源包括连接到高电压源的阴极，连接到低电压源的阳极和衬底支撑件。 在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。 在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。 在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

公开(公告)号：US07029828B2

公开(公告)日：2006-04-18

申请号：US10466546

申请日：2001-10-01

Applicant: Toshiyuki Takagi

Inventor： Toshiyuki Takagi

IPC: H03H9/25

CPC classification number: H03H9/02921 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3174 ,  H01J2237/004 ,  H03H3/08 ,  H03H2260/00

Abstract: In a tester for a surface acoustic wave device used as a filter for high frequency bands in the field of mobile communications, the tester includes: an electron gun generating an electron beam to be first electrons; a condenser lens for converging the electron beam on a substrate; an electron beam scanning portion for scanning the electron beam on the substrate; a secondary electron detector detecting second electrons generating from the substrate by irradiated first electrons; a substrate holder holding the substrate; and a conductive grounding tool which can contact the metal film. The grounding tool includes a contacting head. The grounding tool includes: a contacting head that can contact the grounding tool and the metal film; an arm portion arranged at the end of the contacting head; a shaft arranged at the other end of the contacting head, and rotating the arm portion. The substrate has a two-layer structure, which includes: a circular piezo-electric substrate including lithium tantalate (LiTaO3); and a metal film including aluminum (Al) formed on the piezo-electric substrate.

Abstract translation: 在用于在移动通信领域中用作高频带的滤波器的表面声波装置的测试器中，测试仪包括：产生电子束的电子枪为第一电子; 用于将电子束会聚在基板上的聚光透镜; 用于扫描基板上的电子束的电子束扫描部分; 二次电子检测器，检测通过照射的第一电子从衬底产生的第二电子; 保持基板的基板保持架; 以及可与金属膜接触的导电接地工具。 接地工具包括接触头。 接地工具包括：可接触接地工具和金属膜的接触头; 布置在接触头端部的臂部; 布置在接触头的另一端的轴，并使臂部旋转。 基板具有双层结构，其包括：包括钽酸锂（LiTaO 3 N 3）的圆形压电基板; 以及形成在压电基板上的包含铝（Al）的金属膜。

公开(公告)号：US07009193B2

公开(公告)日：2006-03-07

申请号：US10697644

申请日：2003-10-31

Applicant: Frederico Garza ,  Michael Wright ,  Karl Peterson

Inventor： Frederico Garza ,  Michael Wright ,  Karl Peterson

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J2237/004 ,  H01J2237/18 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: A device to implant impurities into a semiconductor wafer has a process chamber having a wall, a pressure compensation unit, a disk to support a plurality of semiconductor wafers within the process chamber. The disk has a radially extending slot arranged among the wafers. A beam gun is positioned within the process chamber to shoot an ion beam at the semiconductor wafers. A cryo pump minimizes the pressure within the process chamber. A first ion gauge is positioned between the process chamber and the cryo pump. A second ion gauge extends through the wall of the process chamber. A switching device selectively connects the first or second ion gauge to the pressure compensation unit. A faraday receives ions from the ion gun filter after the ions travel through the slot in the disk. A current meter counts the number of electrons flowing to the disk faraday to neutralize the ions.

Abstract translation: 将杂质植入半导体晶片的装置具有处理室，该处理室具有壁，压力补偿单元，用于支撑处理室内的多个半导体晶片的盘。 盘具有布置在晶片之间的径向延伸槽。 射束枪位于处理室内以在半导体晶片处射出离子束。 冷冻泵使处理室内的压力最小化。 第一个离子计位于处理室和低温泵之间。 第二离子计延伸穿过处理室的壁。 开关装置选择性地将第一或第二离子计连接到压力补偿单元。 在离子穿过盘中的槽之后，法拉第接收离子枪过滤器的离子。 电流表计数流到盘法拉第的电子数以中和离子。

公开(公告)号：US06847038B2

公开(公告)日：2005-01-25

申请号：US10643892

申请日：2003-08-20

Applicant: Hideo Todokoro ,  Makoto Ezumi ,  Yoichi Ose ,  Naomasa Suzuki

Inventor： Hideo Todokoro ,  Makoto Ezumi ,  Yoichi Ose ,  Naomasa Suzuki

IPC: G01N23/00 ,  G01Q30/02 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/244 ,  G01N23/225 ,  G01R31/307 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/0535 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24495 ,  H01J2237/24585 ,  H01J2237/24592 ,  H01J2237/281 ,  H01J2237/2817

Abstract: A scanning electron microscope with an energy filter which can positively utilize secondary electrons and/or reflected electrons which collide against a mesh electrode and are lost. The scanning electron microscope which has a porous electrode for producing an electric field for energy-filtering electrons produced by applying a primary electron beam to a sample and a 1st electron detector which detects electrons passing through the porous electrode is characterized by further having a porous structure provided near the sample, a deflector which deflects electrons from the axis of the primary electron beam, and a 2nd electron detector which detects the electrons deflected by the deflector.

公开(公告)号：US06664546B1

公开(公告)日：2003-12-16

申请号：US09502554

申请日：2000-02-10

Applicant: Mark A. McCord ,  Jan Lauber ,  Jun Pei ,  Jorge P. Fernandez

Inventor： Mark A. McCord ,  Jan Lauber ,  Jun Pei ,  Jorge P. Fernandez

IPC: H01J3721

CPC classification number: H01J37/28 ,  H01J2237/004 ,  H01J2237/2594 ,  H01J2237/2814 ,  H01J2237/2817

Abstract: Disclosed is a method and apparatus for generating an image from a sample. The apparatus includes a charged particle beam generator arranged to generate and control a charged particle beam substantially towards a portion of the sample and a detector arranged to detect charged particles originating from the sample portion to allow generation of an image from the detected charged particles. The apparatus further includes a measurement device arranged to measure a characteristic of the sample portion to obtain a surface voltage value of the sample portion that is exposed to the charged particle beam. For example, the measurement device is an electrostatic voltmeter positioned to obtain a surface voltage value of the exposed sample portion. A charged particle beam is directed substantially towards a portion of the sample under a first set of operating conditions. A surface charge value of the sample portion is obtained under the first set of operating conditions. It is then determined whether an optimum set of operating conditions associated with a predetermined surface charge value have been found. When the optimum conditions have not been found, the operating conditions are adjusted and the charged particle beam is directed substantially towards the sample portion. When the optimum conditions have been found, the charged particle beam is directed substantially towards the sample portion under the found optimum operating conditions.

Abstract translation: 公开了一种用于从样本生成图像的方法和装置。 该装置包括带电粒子束发生器，其布置成基本上朝向样品的一部分产生并控制带电粒子束;以及检测器，被布置成检测源自样品部分的带电粒子，以允许从检测到的带电粒子产生图像。 该装置还包括测量装置，其被配置为测量样品部分的特性以获得暴露于带电粒子束的样品部分的表面电压值。 例如，测量装置是定位成获得暴露的样品部分的表面电压值的静电电压表。 在第一组操作条件下，带电粒子束基本上指向样品的一部分。 在第一组操作条件下获得样品部分的表面电荷值。 然后确定是否已经找到与预定表面电荷值相关联的最佳操作条件集合。 当没有发现最佳条件时，调节操作条件并且带电粒子束基本上朝向样品部分。 当已经找到最佳条件时，在找到的最佳操作条件下，带电粒子束基本上指向样品部分。

公开(公告)号：US06642518B1

公开(公告)日：2003-11-04

申请号：US10176873

申请日：2002-06-21

Applicant: Fred Y. Clark ,  James D. Krouse ,  Ping Jiang ,  Robyn R. Carlson

Inventor： Fred Y. Clark ,  James D. Krouse ,  Ping Jiang ,  Robyn R. Carlson

IPC: H01J3710

CPC classification number: G01N23/225 ,  H01J2237/004 ,  H01J2237/2809 ,  H01J2237/2814

Abstract: An assembly and method for improved scanning electron microscope analysis of semiconductor devices include a structure including a first layer and a second layer, the second layer shrinking substantially when the structure is examined with a scanning electron microscope having a beam energy of at least 1.5 KeV, and at least part of the surface of the structure coated with a material composed of Iridium, wherein the coating is of sufficient thickness to reduce shrinkage of the second layer to approximately a predetermined amount when the structure is examined with a scanning electron microscope having a beam energy of at least 1.5 KeV.

Abstract translation: 用于改进半导体器件的扫描电子显微镜分析的组件和方法包括包括第一层和第二层的结构，当使用具有至少1.5KeV的束能的扫描电子显微镜检查结构时，第二层基本上收缩， 并且涂覆有由铱构成的材料的结构的表面的至少一部分，其中当使用具有光束的扫描电子显微镜检查结构时，涂层具有足够的厚度以减小第二层的收缩至约预定量 至少1.5 KeV的能量。

公开(公告)号：US06627884B2

公开(公告)日：2003-09-30

申请号：US09912732

申请日：2001-07-23

Applicant: Mark A. McCord ,  David Walker ,  Jun Pei ,  Neil Richardson

Inventor： Mark A. McCord ,  David Walker ,  Jun Pei ,  Neil Richardson

IPC: G21K700

CPC classification number: H01J37/28 ,  G01N23/225 ,  H01J2237/004 ,  H01J2237/2817

Abstract: Disclosed are methods and apparatus for simultaneously flooding a sample (e.g., a semiconductor wafer) to control charge and inspecting the sample. The apparatus includes a charged particle beam generator arranged to generate a charged particle beam substantially towards a first portion of the sample and a flood gun for generating a second beam towards a second portion of the sample. The second beam is generated substantially simultaneously with the inspection beam. The apparatus further includes a detector arranged to detect charged particles originating from the sample portion. In a further implementation, the apparatus further includes an image generator for generating an image of the first portion of the sample from the detected particles. In one embodiment, the sample is a semiconductor wafer. In a method aspect, a first area of a sample is flooded with a flood beam to control charge on a surface of the sample. A second area of the sample is inspected with an inspection beam. The second area comprises at least a portion of the first area flooded by the flood beam. The inspection beam moves in tandem with the flood beam. In another aspect of the present invention, methods and apparatus are provided for controlling the charge buildup of an area of the sample by an electrode having a voltage applied to it and through which the flood beam and charged particles emitted from the area of the sample can pass.

Abstract translation: 公开了用于同时淹没样品（例如，半导体晶片）以控制电荷并检查样品的方法和装置。 该装置包括带电粒子束发生器，其布置成基本上朝向样品的第一部分产生带电粒子束，以及用于产生朝向样品的第二部分的第二束的泛喷枪。 第二光束基本上与检查光束同时产生。 该装置还包括检测器，其被布置成检测源自样品部分的带电粒子。 在另一实施方式中，该装置还包括图像发生器，用于从检测到的粒子生成样品的第一部分的图像。 在一个实施例中，样品是半导体晶片。 在方法方面，样品的第一区域用泛光束淹没以控制样品表面上的电荷。 用检查梁检查样品的第二个区域。 第二区域包括由洪水束淹没的第一区域的至少一部分。 检查光束与泛光束一起移动。在本发明的另一方面，提供了一种方法和装置，用于通过具有施加到其上的电压的电极来控制样品区域的电荷积累，通过该方法和装置， 并且从样品的区域发射的带电粒子可以通过。

公开(公告)号：US06525326B1

公开(公告)日：2003-02-25

申请号：US09654381

申请日：2000-09-01

Applicant: Eric R. Harrington ,  Victor M. Benveniste ,  Jeffrey A. Burgess ,  John Z. Ye

Inventor： Eric R. Harrington ,  Victor M. Benveniste ,  Jeffrey A. Burgess ,  John Z. Ye

IPC: H01J3730

CPC classification number: H01J3/40 ,  H01J37/026 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/022 ,  H01J2237/31705

Abstract: A system for inhibiting the transport of contaminant particles with an ion beam includes an electric field generator for generating an electric field relative to a path of travel for the ion beam. A particle located in the ion beam and in a region of the electric field is charged to a polarity according to the ion beam, so that the electric field may urge the charged particle out of the ion beam.

Abstract translation: 用于抑制用离子束输送污染物颗粒的系统包括用于相对于离子束的行进路径产生电场的电场发生器。 位于离子束中并且在电场的区域中的粒子根据离子束被充电到极性，使得电场可以将带电粒子推出离子束。

公开(公告)号：US20020166980A1

公开(公告)日：2002-11-14

申请号：US10184939

申请日：2002-07-01

Applicant: MATSUSHITA ELECTRONICS CORPORATION

Inventor： Masahiko Niwayama ,  Hiroko Kubo ,  Kenji Yoneda

IPC: H01J037/08

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/31701 ,  H01L21/26513

Abstract: An impurity introducing apparatus of the present invention includes: a system for introducing an impurity having charges into a target to be processed, the target being a semiconductor substrate or a film formed on the substrate; a system for supplying electrons into the target, the electrons canceling the charges of the impurity; and a system for controlling the maximum energy of the electrons supplied by the electron supply system at a predetermined value or less.

Abstract translation: 本发明的杂质导入装置包括：将具有电荷的杂质引入被处理对象物，所述靶为半导体基板或形成在所述基板上的膜的系统; 用于向目标物质供给电子的系统，电子消除杂质的电荷; 以及用于控制由电子供给系统提供的电子的最大能量以预定值或更小的系统。

公开(公告)号：US06476399B1

公开(公告)日：2002-11-05

申请号：US09654379

申请日：2000-09-01

Applicant: Eric R. Harrington ,  Victor M. Benveniste ,  Michael A. Graf ,  Robert D. Rathmell

Inventor： Eric R. Harrington ,  Victor M. Benveniste ,  Michael A. Graf ,  Robert D. Rathmell

IPC: H01J3730

CPC classification number: H01J37/026 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/022 ,  H01J2237/31705

Abstract: A system for inhibiting the transport of contaminant particles with an ion beam includes a particle charging system for charging particles within a region through which the ion beam travels. An electric field is generated downstream relative to the charged region so as to urge charged particles away from a direction of travel for the ion beam.

Abstract translation: 用于抑制用离子束输送污染物颗粒的系统包括用于在离子束行进的区域内填充颗粒的颗粒装料系统。 在相对于带电区域的下游产生电场，以便使带电粒子远离离子束的行进方向。