Abstract:
A dual beam system includes an ion beam system and a scanning electron microscope with a magnetic objective lens. The ion beam system is adapted to operate optimally in the presence of the magnetic field from the SEM objective lens, so that the objective lens is not turned off during operation of the ion beam. An optional secondary particle detector and an optional charge neutralization flood gun are adapted to operate in the presence of the magnetic field. The magnetic objective lens is designed to have a constant heat signature, regardless of the strength of magnetic field being produced, so that the system does not need time to stabilize when the magnetic field is changed.
Abstract:
A dual beam system includes an ion beam system and a scanning electron microscope with a magnetic objective lens. The ion beam system is adapted to operate optimally in the presence of the magnetic field from the SEM objective lens, so that the objective lens is not turned off during operation of the ion beam. An optional secondary particle detector and an optional charge neutralization flood gun are adapted to operate in the presence of the magnetic field. The magnetic objective lens is designed to have a constant heat signature, regardless of the strength of magnetic field being produced, so that the system does not need time to stabilize when the magnetic field is changed.
Abstract:
A system for ion beam neutralization includes a beamguide configured to transport an ion beam through a dipole field, a first array of magnets and a second array of magnets configured to generate a multi-cusp magnetic field, the first array of magnets being on a first side of the ion beam path and the second array of magnets being on a second side of the ion beam path. The system may further include a charged particle source having one or more apertures configured to inject charged particles into the ion beam. The system may furthermore align the one or more apertures with at least one of the first array of magnets and the second array of magnets to align the injected charged particles from the charged particle source with one or more magnetic regions for an effective charged particle diffusion into the ion beam.
Abstract:
A dual beam system includes an ion beam system and a scanning electron microscope with a magnetic objective lens. The ion beam system is adapted to operate optimally in the presence of the magnetic field from the SEM objective lens, so that the objective lens is not turned off during operation of the ion beam. An optional secondary particle detector and an optional charge neutralization flood gun are adapted to operate in the presence of the magnetic field. The magnetic objective lens is designed to have a constant heat signature, regardless of the strength of magnetic field being produced, so that the system does not need time to stabilize when the magnetic field is changed.
Abstract:
An imprint method is constituted by a step of curing a resin material formed on a substrate in a state in which an imprint pattern of a mold is in contact or proximity with the resin material, and a step of parting the mold from the cured resin material. The parting is effected while irradiating an entire area in which the imprint pattern of the mold is formed and the cured resin material with an electromagnetic wave for ionizing gaseous molecules in an atmosphere in which the mold and the cured resin material are placed.
Abstract:
A charge control electrode emitting photoelectrons is disposed just above a wafer (sample) in parallel thereto, and the electrode has a through hole so that ultraviolet light can be irradiated to the wafer through the charge control electrode. Specifically, a metal plate which is formed in mesh or includes one or plural holes is used as the charge control electrode. By disposing the charge control electrode just above the sample in parallel thereto, when negative voltage is applied to the electrode, electric field approximately perpendicular to the wafer is generated. Therefore, photoelectrons are efficiently absorbed in the wafer. Also, by using the charge control electrode having approximately the same size as that of the wafer, charges on a whole surface of the wafer can be removed collectively and uniformly. Therefore, time required for the process can be reduced.
Abstract:
In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.
Abstract:
In a substrate processing apparatus using a neutralized beam and a method thereof, the substrate processing apparatus includes: an ion source for emitting an ion beam at an emitting angle; reflectors at which the ion beam emitted by the ion source is incident and subject to 2n collisions (where n is a positive integer) in first and second opposite directions to neutralize the ion beam as a neutralized beam and to restore a direction of propagation of the neutralized beam to the emitting angle of the ion beam; and a substrate at which the neutralized beam generated by the reflectors is incident on to perform a process. Accordingly, an incident angle of the resultant neutralized beam is perpendicular to a substrate, while the direction of propagation of the originating ion source and the surface of the substrate are maintained to be perpendicular to each other.
Abstract:
The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ‘blow-up’ causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.
Abstract:
In a substrate processing apparatus using a neutralized beam and a method thereof, the substrate processing apparatus includes: an ion source for emitting an ion beam at an emitting angle; reflectors at which the ion beam emitted by the ion source is incident and subject to 2n collisions (where n is a positive integer) in first and second opposite directions to neutralize the ion beam as a neutralized beam and to restore a direction of propagation of the neutralized beam to the emitting angle of the ion beam; and a substrate at which the neutralized beam generated by the reflectors is incident on to perform a process. Accordingly, an incident angle of the resultant neutralized beam is perpendicular to a substrate, while the direction of propagation of the originating ion source and the surface of the substrate are maintained to be perpendicular to each other.