公开(公告)号：US20110278452A1

公开(公告)日：2011-11-17

申请号：US13129201

申请日：2009-10-15

Applicant: Mari Nozoe ,  Hiroshi Miyai ,  Mitsuru Okamura ,  Makoto Suzuki ,  Yusuke Ominami

Inventor： Mari Nozoe ,  Hiroshi Miyai ,  Mitsuru Okamura ,  Makoto Suzuki ,  Yusuke Ominami

IPC: H01J37/26 ,  H01J37/285

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J2237/0048 ,  H01J2237/2008 ,  H01J2237/24564 ,  H01J2237/2817 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a pattern inspection apparatus including: a charge formation means which forms charge on a surface of a substrate (7) by generating an electron beam from a second electron source (20) which is different from an electron source (I) which generates an electron beam before irradiating an electron beam (3), a current measuring means (34) which measures a value of current flowing in the substrate while the charge is formed on the surface of the substrate by the charge formation means; and an adjustment means (37) which adjusts the charge formed by the charge formation means so that the value of the current measured by the current measuring means is a predetermined target value. Provided is also a pattern inspection method which uses the pattern inspection apparatus. Thus, it is possible to easily set an optimal condition of precharge executed before inspection of a pattern formed by a semiconductor apparatus manufacturing process and automatically inspection whether the precharge is good. Then, the inspection result is fed back to the operation afterward. This prevents lowering of the reliability of the inspection result and always enables a stable inspection.

Abstract translation: 提供了一种图案检查装置，包括：电荷形成装置，其通过从不同于电子源（I）的第二电子源（20）产生电子束，在基板（7）的表面上形成电荷， 电子束（3）之前的电子束;电流测量装置（34），其通过电荷形成装置测量在基板的表面上形成电荷时在基板中流动的电流值; 以及调整装置，其调整由电荷形成装置形成的电荷，使得由电流测量装置测量的电流的值是预定的目标值。 还提供了使用图案检查装置的图案检查方法。 因此，可以容易地设定在由半导体装置制造工艺形成的图案的检查之前执行的预充电的最佳状态，并且自动检查预充电是否良好。 然后，检查结果反馈给操作。 这防止了检查结果的可靠性降低，并且始终能够进行稳定的检查。

公开(公告)号：US07977632B2

公开(公告)日：2011-07-12

申请号：US12253476

申请日：2008-10-17

Applicant: Hideo Todokoro ,  Makoto Ezumi ,  Yasutsugu Usami

Inventor： Hideo Todokoro ,  Makoto Ezumi ,  Yasutsugu Usami

IPC: G21K7/00

CPC classification number: H01J37/28 ,  H01J37/026 ,  H01J2237/0045 ,  H01J2237/0048 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/281 ,  H01J2237/31701

Abstract: To make it possible to observe the bottom of a contact hole and internal wires, in observation of the contact hole 102, by scanning it at a predetermined acceleration voltage, the positive charge 106 is formed on the surface of the insulator 101, and the secondary electrons 104 are attracted in the hole by this electric field, and the hole is continuously scanned at an acceleration voltage different from the acceleration voltage, and the sample is observed. When the wires embedded in the insulator are to be observed, by observing the insulator at a predetermined acceleration voltage, an electron beam is allowed to enter the sample, and the sample is continuously scanned at an acceleration voltage different from the acceleration voltage, and hence the existence of wires is reflected as a change in the charge of the surface, and it is observed. In either case, the acceleration voltage before observation is different from the one during observation, and the sample surface is temporarily radiated at an acceleration voltage positively generating a positive or negative charge, and thereafter, the acceleration voltage is returned to a one suited to observation, and the sample is observed.

Abstract translation: 为了可以观察接触孔和内部电线的底部，在观察接触孔102时，通过以预定的加速电压扫描，正电荷106形成在绝缘体101的表面上，次级 电子104通过该电场被吸引在孔中，并且以与加速电压不同的加速电压连续地扫描孔，并且观察样品。 当要观察嵌入在绝缘体中的电线时，通过以预定的加速电压观察绝缘体，允许电子束进入样品，并且以不同于加速电压的加速电压连续扫描样品，因此 电线的存在被反映为表面电荷的变化，并且被观察。 在任一种情况下，观察前的加速电压与观察期间的加速电压不同，并且以正向或正负电荷的正电荷的加速电压暂时照射样品表面，然后将加速电压恢复为适合于观察的加速电压 ，并观察样品。

公开(公告)号：US20110101213A1

公开(公告)日：2011-05-05

申请号：US12609912

申请日：2009-10-30

Applicant: Shu Satoh

Inventor： Shu Satoh

IPC: H01J37/08 ,  B01D59/44

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0048 ,  H01J2237/0815

Abstract: Methods and a system of an ion implantation system are disclosed that are capable of increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Positive ions having a first positive charge state are selected into an accelerator. The positive ions of the first positive charge state are accelerated in acceleration stages and stripped to convert them to positive ions of a second charge state. A second kinetic energy level higher than the maximum kinetic energy level of the first charge state can be obtained.

Abstract translation: 公开了一种离子注入系统的方法和系统，其能够在不改变离子源处的电荷状态的情况下从离子源增加高于第一电荷状态的最大动能的束电流。 选择具有第一正电荷状态的正离子进入加速器。 第一正电荷状态的正离子在加速阶段加速并剥离，以将其转换成第二电荷状态的正离子。 可以获得高于第一充电状态的最大动能水平的第二动能水平。

公开(公告)号：US20110025340A1

公开(公告)日：2011-02-03

申请号：US12842664

申请日：2010-07-23

Applicant: Toyokazu NAKAMURA ,  Sumio Kuwabara

Inventor： Toyokazu NAKAMURA ,  Sumio Kuwabara

IPC: G01R31/307 ,  H01J37/28

CPC classification number: G01R31/307 ,  H01J37/28 ,  H01J2237/0048 ,  H01J2237/22 ,  H01J2237/2817

Abstract: A semiconductor device analyzer comprises a function of radiating a charged particle beam on a sample and displaying a detected secondary electron image according to detected secondary electron intensity. A charged particle beam is radiated according to a first radiation pattern onto a semiconductor device that is to be analyzed, and a charge is injected. Next, a charge accumulation state of the semiconductor device that is to be analyzed is observed. A location where the charge accumulation state is abnormal can be detected as a defect location in the semiconductor device. A defect location is identified easily.

Abstract translation: 半导体器件分析仪具有将带电粒子束照射在样本上并根据检测到的二次电子强度显示检测到的二次电子图像的功能。 将带电粒子束根据第一辐射图辐射到待分析的半导体器件上，并且注入电荷。 接下来，观察要分析的半导体器件的电荷累积状态。 电荷累积状态异常的位置可以被检测为半导体器件中的缺陷位置。 缺陷位置容易识别。

公开(公告)号：US07612570B2

公开(公告)日：2009-11-03

申请号：US11847790

申请日：2007-08-30

Applicant: Hiroyuki Suhara

Inventor： Hiroyuki Suhara

IPC: G01R31/305

CPC classification number: G01R31/305 ,  G03G15/5037 ,  G03G2215/00033 ,  G03G2215/00054 ,  H01J37/244 ,  H01J37/268 ,  H01J2237/0047 ,  H01J2237/0048 ,  H01J2237/2444 ,  H01J2237/24564 ,  H01J2237/2594

Abstract: A surface-potential distribution measuring apparatus includes an electron gun, an electron-beam optical system, an electron-emission panel, a detector, and a control system. The electron-beam optical system is located between the electron gun and a sample, and focuses a beam of electrons emitted from the electron gun to the surface of the sample. The electron-emission panel is located near the sample to be collided with at least part of the electrons via the sample, and emits secondary electrons corresponding to the number of collided electrons. The detector detects at least part of the secondary electrons. The control system obtains potential distribution on the surface of the sample based on a detection result obtained by the detector.

Abstract translation: 表面电位分布测量装置包括电子枪，电子束光学系统，电子发射面板，检测器和控制系统。 电子束光学系统位于电子枪和样品之间，并将从电子枪发射的电子束聚焦到样品的表面。 电子发射面板位于样品附近，通过样品与至少部分电子碰撞，并发射对应于碰撞电子数的二次电子。 检测器检测至少部分二次电子。 控制系统根据检测器得到的检测结果，获得样品表面的电位分布。

公开(公告)号：US07583491B2

公开(公告)日：2009-09-01

申请号：US11436471

申请日：2006-05-18

Applicant: Scott Peitzsch

Inventor： Scott Peitzsch

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  H01J2237/0048 ,  H01J2237/2007 ,  H01J2237/31705 ,  H01L21/67011

Abstract: An ion implanter includes an electrostatic chuck. The electrostatic chuck is configured to repel charged particles from a surface of the electrostatic chuck to limit deposits of the charged particles on the surface when the electrostatic chuck is not supporting any workpiece. An electrostatic chuck including a dielectric layer and at least one electrode is also provided. The at least one electrode is configured to accept a DC voltage signal to produce a first charge to repel charged particles from the dielectric layer when the dielectric layer is not supporting any workpiece to thereby limit deposits of the charged particles on the dielectric layer.

Abstract translation: 离子注入机包括静电卡盘。 静电卡盘被配置为当静电卡盘不支撑任何工件时，从静电卡盘的表面排出带电粒子以限制带电粒子沉积在表面上。 还提供了包括电介质层和至少一个电极的静电卡盘。 所述至少一个电极被配置为当所述电介质层不支撑任何工件从而限制所述电介质层上带电粒子的沉积时，接受DC电压信号以产生第一电荷以从所述电介质层排斥带电粒子。

公开(公告)号：US20070194229A1

公开(公告)日：2007-08-23

申请号：US11601723

申请日：2006-11-20

Applicant: Hirohito Okuda ,  Takashi Hiroi ,  Masaki Hasegawa ,  Shigeya Tanaka

Inventor： Hirohito Okuda ,  Takashi Hiroi ,  Masaki Hasegawa ,  Shigeya Tanaka

IPC: G21K7/00

CPC classification number: H01J37/026 ,  H01J37/292 ,  H01J2237/0048 ,  H01J2237/2817

Abstract: The present invention provides a mirror electron projection (MPJ) type (SEPJ type included) scanning electron beam apparatus that is capable of performing condition setup, and a method and apparatus for inspecting pattern defects with the scanning electron beam apparatus. A mirror electron projection type defect inspection apparatus, which comprises a charging device for emitting a charging electron beam, electron beam irradiation means for shedding a mirror electron projection electron beam onto an inspection region near which an electrical potential distribution is formed, detection means for detecting secondary electrons or reflected electrons generated from a surface and proximity of the specimen, and defect detection means for detecting a defect by processing a mirror image signal that is detected by the detection means, includes irradiation condition optimization means for optimizing charging electron beam irradiation conditions.

Abstract translation: 本发明提供一种能够进行条件建立的镜电子投射（MPJ）型（包括SEPJ型）扫描电子束装置，以及用扫描电子束装置检查图案缺陷的方法和装置。 镜电子投影型缺陷检查装置，其包括用于发射充电电子束的充电装置，用于将镜电子投影电子束切除到形成有电位分布的检查区域的电子束照射装置，用于检测 从检体的表面和邻近产生的二次电子或反射电子，以及用于通过处理由检测装置检测出的镜像信号来检测缺陷的缺陷检测装置，包括用于优化充电电子束照射条件的照射条件优化装置。

公开(公告)号：US07176468B2

公开(公告)日：2007-02-13

申请号：US10942184

申请日：2004-09-16

Applicant: Kirk J. Bertsche ,  Mark A. McCord

Inventor： Kirk J. Bertsche ,  Mark A. McCord

IPC: H01J37/244

CPC classification number: G21K7/00 ,  H01J37/026 ,  H01J2237/0045 ,  H01J2237/0048

Abstract: A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating is substrate to a target potential.

Abstract translation: 将绝缘基板的表面充电至目标电位。 在一个实施方案中，表面充满了较高能量的电子束，使得电子产率大于1。 随后，表面被低能电子束淹没，使得电子产率小于1。 在另一个实施例中，衬底被提供有处于大于目标电位的初始电位的状态的表面。 然后用带电粒子充满表面，使得散射颗粒的电荷产率小于1，使得达到达到目标电势的稳定状态。 另一个实施例涉及一种用于将绝缘体的表面充电至靶电位的装置。

公开(公告)号：US06828571B1

公开(公告)日：2004-12-07

申请号：US10699708

申请日：2003-11-03

Applicant: Mark A. McCord ,  Jan A. Lauber ,  Paul Petric ,  Ross W. Thompson ,  Jason Lim ,  Frank Y. H. Fan ,  Gabor D. Toth

Inventor： Mark A. McCord ,  Jan A. Lauber ,  Paul Petric ,  Ross W. Thompson ,  Jason Lim ,  Frank Y. H. Fan ,  Gabor D. Toth

IPC: H01L2100

CPC classification number: G01R31/307 ,  G01R31/2653 ,  H01J37/026 ,  H01J37/21 ,  H01J2237/0048 ,  H01J2237/20 ,  H01J2237/216 ,  H01J2237/2817

Abstract: One embodiment disclosed relates to a method of setting a surface charge of an area on a substrate to a desired level. The substrate is held on a stage, and a stage bias voltage applied to the stage is controlled. A flood of electrons is directed to the area. The stage bias voltage is controlled such that the surface charge of the area reaches an equilibrium at the desired level. Another embodiment disclosed relates to a method of auto-focusing a main electron beam incident upon an imaging area of a substrate. A monitor electron beam is generated and directed towards a monitoring area of the substrate at a non-perpendicular incidence angle. An in-focus band in data collected from the monitor beam is detected. The focal length of an objective lens focusing the main beam is adjusted based upon a position of the in-focus band.

Abstract translation: 公开的一个实施例涉及一种将衬底上的区域的表面电荷设置到期望水平的方法。 将基板保持在平台上，并且控制施加到载物台的载物台偏置电压。 大量的电子被引导到该地区。 阶段偏置电压被控制使得该区域的表面电荷达到期望水平的平衡。 公开的另一实施例涉及一种自动聚焦入射到基板的成像区域上的主电子束的方法。 产生监视电子束并以非垂直入射角朝向基板的监视区域。 检测从监视器束收集的数据中的对焦带。 聚焦主光束的物镜的焦距基于对焦带的位置进行调整。

公开(公告)号：US06717145B1

公开(公告)日：2004-04-06

申请号：US09583001

申请日：2000-05-26

Applicant: Toru Takagi ,  Naoto Kihara

Inventor： Toru Takagi ,  Naoto Kihara

IPC: G01N2300

CPC classification number: G01N23/2251 ,  H01J37/026 ,  H01J37/265 ,  H01J2237/0044 ,  H01J2237/0048 ,  H01J2237/2817

Abstract: Mapping electron microscopes are disclosed in which the amount of charging of the specimen is controlled to between a minimum amount needed to view an image and a maximum amount beyond which a viewable image cannot be obtained that has low distortion or that does not result in specimen damage. Multiple irradiation-electron beams, or multiple segments of a single irradiation-electron beam, are directed to a specimen surface. The irradiation beams (or segments) are decelerated by a retarding voltage applied by a cathode lens and are incident on the specimen surface. The respective current and incident energy of each irradiation beam (or segment thereof) are controlled independently to a predetermined relationship so as to impart predetermined amounts of charging to different insulator regions of the specimen.

Abstract translation: 公开了映射电子显微镜，其中将样品的充电量控制在观看图像所需的最小量与最大量之间，超过该最大量可以获得具有低失真或不导致样品损伤的可视图像 。 单个照射电子束的多个照射电子束或多个片段被引导到样品表面。 照射光束（或片段）由阴极透镜施加的延迟电压减速，并入射在样本表面上。 每个照射束（或其片段）的相应的电流和入射能量被独立​​地控制到预定的关系，以便对样本的不同绝缘体区域赋予预定量的电荷。