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    APPARATUS AND METHOD FOR MULTIPLE SLOT ION IMPLANTATION
    22.
    发明申请
    APPARATUS AND METHOD FOR MULTIPLE SLOT ION IMPLANTATION 有权
    多种植入物的装置和方法

    公开(公告)号：US20120248328A1

    公开(公告)日：2012-10-04

    申请号：US13079369

    申请日：2011-04-04

    Applicant: Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson

    Inventor： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson

    IPC: H01J3/14 ,  G21G5/00

    CPC classification number: H01J37/3023 ,  H01J27/024 ,  H01J37/08 ,  H01J37/3172 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32752 ,  H01J2237/31711

    Abstract: An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.

    Abstract translation: 离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。 该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束 轮廓与从第二孔提取的第二离子束不同。

    Covering wide areas with ionized gas streams
    23.
    发明授权
    Covering wide areas with ionized gas streams 有权
    覆盖广泛的地区与电离气流

    公开(公告)号：US08143591B2

    公开(公告)日：2012-03-27

    申请号：US12925519

    申请日：2010-10-22

    Applicant: Peter Gefter ,  Aleksey Klochkov ,  John Menear

    Inventor： Peter Gefter ,  Aleksey Klochkov ,  John Menear

    IPC: H01J27/00

    CPC classification number: H01J27/024 ,  B03C3/361 ,  B03C3/38

    Abstract: Ion delivery manifolds with a gas transport channel, for receiving an ionized gas stream, and plural outlets that divide the gas stream into plural neutralization gas streams that are directed toward respective plural target regions are disclosed. At least generally equal ion distribution across the target regions is achieved by using different ion flow rates through the plural outlets. Methods of delivering plural neutralization streams to respective plural target regions include steps for receiving an ionized gas stream, for dividing the ionized gas stream into plural neutralization streams, and for directing the neutralization streams toward respective target regions. At least generally equal ion distribution across the target regions is achieved by differing the ion flow rates of the neutralization streams.

    Abstract translation: 公开了具有用于接收电离气流的气体输送通道的离子输送歧管以及将气流分成多个指向相应的多个目标区域的中和气流的多个出口。 通过使用通过多个​​出口的不同离子流速来实现目标区域上的至少大致相等的离子分布。 向多个目标区域输送多个中和流的方法包括用于接收电离气体流的步骤，用于将电离气体流分成多个中和流，并将中和流引导到各自的目标区域。 通过不同的中和流的离子流速来实现目标区域上的至少大致相等的离子分布。

    Method and apparatus for extracting ions from an ion source for use in ion implantation
    25.
    发明授权
    Method and apparatus for extracting ions from an ion source for use in ion implantation 有权
    用于离子注入离子源提取离子的方法和装置

    公开(公告)号：US07791047B2

    公开(公告)日：2010-09-07

    申请号：US11452003

    申请日：2006-06-12

    Applicant: Thomas N. Horsky ,  Robert W. Milgate, III ,  George P. Sacco, Jr. ,  Dale Conrad Jacobson ,  Wade Allen Krull

    Inventor： Thomas N. Horsky ,  Robert W. Milgate, III ,  George P. Sacco, Jr. ,  Dale Conrad Jacobson ,  Wade Allen Krull

    IPC: H01J37/08

    CPC classification number: H01J37/08 ,  C23C14/48 ,  C23C14/564 ,  H01J9/38 ,  H01J27/024 ,  H01J37/3171 ,  H01J2209/017 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/0812 ,  H01J2237/083 ,  H01J2237/31701 ,  H01L21/265

    Abstract: Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics. A remote plasma source delivers F or Cl ions to the de-energized ion source for the purpose of cleaning deposits in the ion source and the extraction electrode. These techniques enable long equipment uptime when running condensable feed gases such as sublimated vapors, and are particularly applicable for use with so-called cold ion sources and universal ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

    Abstract translation: 为离子束产生系统的提取电极提供热控制，其防止沉积物的形成和不稳定的操作，并且能够与可冷凝蒸气和能够冷热操作的离子源产生的离子一起使用。 提取电极的电加热用于提取十硼烷或十八硼烷离子。 使用热离子源时的主动冷却可防止电极破坏，从而使引出电极具有导热和防氟的铝组成。 通过使用反应性卤素气体对离子源和引出电极进行原位蚀刻清洗，并且具有延长清洗之间的使用持续时间的特征，包括准确的蒸汽流量控制和精确的聚焦，增强了系统的使用寿命 离子束光学。 远程等离子体源将F或Cl离子输送到去激活离子源，以清除离子源和提取电极中的沉积物。 这些技术使得在运行可冷凝的进料气体如升华蒸汽时长的设备正常运行时间，并且特别适用于所谓的冷离子源和通用离子源。 描述了使用十硼烷和十八硼烷作为原料的长设备正常运行时间，以及当使用蒸发的元素砷和磷时，并且用于提高离子注入期间的束稳定性的方法和装置。

    Ion source section for ion implantation equipment
    30.
    发明授权
    Ion source section for ion implantation equipment 失效
    离子注入设备的离子源部分

    公开(公告)号：US07521694B2

    公开(公告)日：2009-04-21

    申请号：US11194594

    申请日：2005-08-01

    Applicant: Kwang-Ho Cha

    Inventor： Kwang-Ho Cha

    IPC: H01J27/00

    CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/083

    Abstract: An ion source section of ion implantation equipment for ionizing reaction gas in an ion implantation process of semiconductor manufacturing processes is disclosed. The ion source section includes a source aperture member separable from an arc chamber and having an ion-discharging hole through which the ion beam discharges. The source aperture member consists of a first plate, a second plate adjacent to the first plate and facing the arc chamber, and a third plate to protect the exposed second plate from the ionized reaction gas.

    Abstract translation: 公开了一种用于在半导体制造工艺的离子注入工艺中离子化反应气体的离子注入设备的离子源部分。 离子源部分包括可与电弧室分离并具有离子放电孔的源极孔部件，离子束通过该离子放电孔排出。 源孔径构件包括第一板，与第一板相邻并面向电弧室的第二板，以及用于保护暴露的第二板免于电离反应气体的第三板。

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