Abstract:
A flip chip package structure and a method for manufacturing the same are disclosed. The method for manufacturing a flip chip package structure comprises following steps: (a) providing a semiconductor chip including a plurality of electrode pads and a plurality of first solders, and providing a packaging substrate having a plurality of conductive pads and a plurality of second solders (b) forming a resin adhesive layer on the active surface of the semiconductor chip, and the first solders are exposed from the resin adhesive layer; (c) assembling the packaging substrate and the semiconductor chip with the resin adhesive layer formed thereon to form an assembly unit; and (d) reflow soldering the assembly unit to fuse the first solders of the semiconductor chip with the second solders of the packaging substrate to form fused solders, and the packaging substrate is adhered with the resin adhesive layer.
Abstract:
First, a plurality of wiring boards are fabricated at separate steps. The first wiring board includes a Cu post formed on a wiring layer on one surface of a substrate, and a first stopper layer formed at a desired position around the Cu post. The second wiring board includes a through hole for insertion of the Cu post therethrough, a connection terminal formed on a wiring layer on one surface of a substrate, and a second stopper layer that engages the first stopper layer and functions to suppress in-plane misalignment. The third wiring board includes a connection terminal formed on a wiring layer on one surface of a substrate. Then, the wiring boards are stacked up, as aligned with one another so that the wiring layers are interconnected via the Cu post and the connection terminals, to thereby electrically connect the wiring boards. Thereafter, resin is filled into gaps between the wiring boards.
Abstract:
A semiconductor pellet is mounted on a circuit board. The pellet has a first terminal pad and a first solder layer formed on the first terminal pad. The circuit board has a second terminal pad and a second solder layer formed on the second terminal pad. A metal ball is positioned between the first and the second solder layers such that when the solder layers are reflowed, an intermetallic compound is formed between the metal ball and the first terminal pad and between the ball and the second terminal pad, the intermetallic compound including a thickness not more than 10 μm in areas in which said metal ball is closest to the second terminal pad and to the first terminal. The metal ball has a surface neither in contact with the first solder layer nor the second solder layer.
Abstract:
A foamed bulk metallic glass electrical connection is formed on a substrate of an integrated circuit package. The foamed bulk metallic glass electrical connection exhibits a low modulus that resists cracking during shock and dynamic loading. The foamed bulk metallic glass electrical connection is used as a solder bump for communication between an integrated circuit device and external structures. A process of forming the foamed bulk metallic glass electrical connection includes mixing bulk metallic glass with a blowing agent.
Abstract:
What is provided is a multi-layer PCB having a plurality of stacked dielectric layers, a conductor disposed on at least one of the plurality of dielectric layers, and a non-conductive via extending through at least a portion of the plurality of dielectric layers to intersect the conductor. A conductive body in an activated state is introduced into the non-conductive via, and upon contacting the conductor, the activated state conductive body adheres to the conductor. The activated state conductive body is then effected to a deactivated state, wherein the conductive body is affixed to the conductor to provide an electrical connection thereto.
Abstract:
A solder ball 50 according to the present invention includes a spherical core 2 and a solder layer 4, which includes Sn and Ag and which is provided so as to wrap the core 2 up. The amount of water contained in the solder layer 4 is 100 μl/g or less when represented by the amount of water vapor in standard conditions.
Abstract:
What is provided is a multi-layer PCB having a plurality of stacked dielectric layers, a conductor disposed on at least one of the plurality of dielectric layers, and a non-conductive via extending through at least a portion of the plurality of dielectric layers to intersect the conductor. A conductive body in an activated state is introduced into the non-conductive via, and upon contacting the conductor, the activated state conductive body adheres to the conductor. The activated state conductive body is then effected to a deactivated state, wherein the conductive body is affixed to the conductor to provide an electrical connection thereto.
Abstract:
Provided is an FPC, which comprises an insulating layer 2, wiring layers 3 and 4 laminated above and under the insulating layer 2, and a layer connection for connecting the wiring layers 3 and 4 electrically. The layer connection is constituted to comprise: a conductor press-fit hole 5 of a cone shape extending through the insulating layer 2 and the upper and lower wiring layers 3 and 4 and expanded to the side of one wiring layer 3; and a conductor 6 filled and press-fitted without any clearance in the conductor press-fit hole such that it is jointed to the wiring upper layer 3 deformed into the cone shape of the conductor press-fit hole 5, and is protruded from the other wiring lower layer 4 to have its surface partially coated and jointed. As a result, the contact area between the wiring layers 3 and 4 and the conductor 6 filled in the conductor press-fit hole 5 can be enlarged to retain the contact strength between the wiring layers 3 and 4 and the conductor 6 sufficiently thereby to provide a high connection reliability for the layer connection.
Abstract:
There is disclosed is a method comprising surface-processing a Sn based, Sn alloy based or Sn—Zn alloy based solder particle (1), applied as a coating, such as by electrical plating or melt plating, to the surface of a metal material, such as iron, a steel plate or copper, with a phosphate and a silicium containing compound, to form a protective film (2). There are also disclosed a solder material (6) in which a protective film (2) formed of a phosphate and a silicium containing compound is formed on the surface of the Sn—Zn based solder particle (1), and a solder paste formed of this solder material (6) and the flux.
Abstract:
A conductive ball is formed by coating a generally spherical-shaped core made of a non-metallic material with a coating layer composed of a Cu layer and an Sn-5.5Ag alloy layer of non-eutectic composition. The conductive ball is disposed on a land of an electronic component via flux and reflown at heating temperatures whose peak temperatures reach 250 to 260° C. The Sn-5.5Ag alloy of non-eutectic composition is put in the state in which a solidus portion and a liquidus portion coexist to keep flowability relatively small. The conductive ball is fixed on the land without exposing an SnCu layer formed on the Cu layer. An electrode is formed without exposing the SnCu layer having relatively poor solder wettability. Between the electronic component and a circuit board, a joint section having a good electric conduction property and mechanical strength may be formed.