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21.发明授权Triggered vacuum gap device with rare earth trigger electrode gas storage means and titanium reservoir 失效具有稀土触发电极气体储存装置和钛储层的触发真空间隙装置
公开(公告)号：US3331988A
公开(公告)日：1967-07-18
申请号：US56520466
申请日：1966-07-14
Applicant: GEN ELECTRIC
Inventor： LAFFERTY JAMES M
CPC classification number: H01T2/02 , H01J17/00 , H01J17/22 , H01J21/00 , H01J2893/0059
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22.发明授权Electric spark gap with insulation which maintains its high insulative character throughout its operation 失效具有绝缘性的电火花间隙，在其运行过程中保持其高绝缘性
公开(公告)号：US3287590A
公开(公告)日：1966-11-22
申请号：US23093962
申请日：1962-10-16
Applicant: EURATOM
Inventor： THIERRY ANDRE
CPC classification number: H01J21/00 , H01J17/00 , H01J2893/0059 , H01T4/12
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公开(公告)号：US3093766A
公开(公告)日：1963-06-11
申请号：US10909061
申请日：1961-05-10
Applicant: GEN ELECTRIC
Inventor： COBINE JAMES D
CPC classification number: H01J17/00 , H01J21/00 , H01J2893/0059
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公开(公告)号：US3087092A
公开(公告)日：1963-04-23
申请号：US10908961
申请日：1961-05-10
Applicant: GEN ELECTRIC
Inventor： LAFFERTY JAMES M
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公开(公告)号：US09099272B2
公开(公告)日：2015-08-04
申请号：US14250932
申请日：2014-04-11
Applicant: Micron Technology, Inc.
Inventor： Neal R. Rueger
CPC classification number: H01J9/18 , B82Y15/00 , B82Y99/00 , H01J9/025 , H01J21/04 , H01J21/10 , H01J63/02 , H01J2201/30469 , Y10S977/939
Abstract: The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.
Abstract translation: 本公开包括场发射装置实施例。 本公开还包括用于形成场发射器件的方法实施例。 一个装置实施例包括限定内部空间的壳体，该内部空间包括下部分和上部部分，位于壳体下部的阴极，耦合到阴极的细长纳米结构，位于壳体上部的阳极，以及 位于细长纳米结构和阳极之间的控制网格，以控制阳极和细长纳米结构之间的电子流。
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Patent Agency Ranking
公开(公告)号：US20130307404A1
公开(公告)日：2013-11-21
申请号：US13934488
申请日：2013-07-03
Applicant: Tadahiro OHMI , Akihiro MORIMOTO
Inventor： Tadahiro OHMI , Akihiro MORIMOTO
CPC classification number: H01J9/395 , H01J7/02 , H01J9/38 , H01J9/385 , H01J17/20 , H01J21/00 , H01J37/18 , H01J61/20 , H01J61/24
Abstract: With respect to a vacuum tube having a reduced pressure vessel containing an electric discharge gas sealed therein, problems such as the lowering of discharge efficiency owing to an organic material, moisture or oxygen remaining in the reduced pressure vessel have taken place conventionally. It has been now found that the selection of the number of water molecules, the number of molecules of an organic gas and the number of oxygen molecules remaining in the reduced pressure vessel, in a relation with the number of molecules of a gas contributing the electric discharge allows the reduction of the adverse effect by the above-mentioned remaining gas. Specifically, the selection of the number of molecules of the above electric discharge gas being about ten times that of the above-mentioned remaining gas or more can reduce the adverse effect by the above-mentioned remaining gas.
Abstract translation: 对于具有密封在其中的放电气体的减压容器的真空管，常规地发生诸如由于有机材料引起的排出效率降低，残留在减压容器中的水分或氧气的问题。 现在已经发现，选择水分子的数量，有机气体的分子数和残留在减压容器中的氧分子的数量与导致电气的气体的分子数的关系 放电允许通过上述剩余气体减少不利影响。 具体而言，选择上述放电气体的分子数为上述剩余气体的10倍以上的分子数量，可以减少上述剩余气体的不利影响。
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公开(公告)号：US06893533B2
公开(公告)日：2005-05-17
申请号：US10697893
申请日：2003-10-29
Applicant: John Holland , Valentin N. Todorow , Michael Barnes
Inventor： John Holland , Valentin N. Todorow , Michael Barnes
CPC classification number: H01J37/321
Abstract: The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.
Abstract translation: 在一个实施例中的本发明在用于处理半导体工件的等离子体反应器中实现。 反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线 并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离 对称轴。 RF等离子体源电源连接在多个导体中的每一个上。
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公开(公告)号：US5423940A
公开(公告)日：1995-06-13
申请号：US114710
申请日：1993-08-31
Applicant: Lee Chen , Shwu-Jen Jeng , Wesley C. Natzle , Chienfan Yu
Inventor： Lee Chen , Shwu-Jen Jeng , Wesley C. Natzle , Chienfan Yu
IPC: C23F4/02 , C23F4/00 , H01L21/302 , H01L21/311 , H01J21/00
CPC classification number: H01L21/31116 , C23F4/00
Abstract: In supersonic molecular beam etching, the reactivity of the etchant gas and substrate surface is improved by creating etchant gas molecules with high internal energies through chemical reactions of precursor molecules, forming clusters of etchant gas molecules in a reaction chamber, expanding the etchant gas molecules and clusters of etchant gas molecules through a nozzle into a vacuum, and directing the molecules and clusters of molecules onto a substrate. Translational energy of the molecules and clusters of molecules can be improved by seeding with inert gas molecules. The process provides improved controllability, surface purity, etch selectivity and anisotropy. Etchant molecules may also be expanded directly (without reaction in a chamber) to produce clusters whose translational energy can be increased through expansion with a seeding gas.
Abstract translation: 在超音速分子束蚀刻中，蚀刻剂气体和衬底表面的反应性通过通过前体分子的化学反应产生具有高内能的蚀刻剂气体分子来改善，在反应室中形成蚀刻剂气体分子簇，使蚀刻剂气体分子膨胀， 蚀刻剂气体分子的簇通过喷嘴进入真空，并将分子和分子簇引导到基底上。 可以通过用惰性气体分子进行接种来改善分子和分子团簇的平移能。 该方法提供改进的可控性，表面纯度，蚀刻选择性和各向异性。 蚀刻剂分子也可以直接扩增（在室中没有反应）以产生其平移能量可以通过用接种气体膨胀而增加的簇。
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29.发明授权
公开(公告)号：US5283501A
公开(公告)日：1994-02-01
申请号：US732298
申请日：1991-07-18
Applicant: Xiaodong T. Zhu , James E. Jaskie , Robert C. Kane
Inventor： Xiaodong T. Zhu , James E. Jaskie , Robert C. Kane
CPC classification number: H01J1/3042 , H01J3/022 , H01J2201/30457
Abstract: Electron devices employing electron sources including a material having a surface exhibiting a very low/negative electron affinity such as, for example, the 111 crystallographic plane of type II-B diamond. Electron sources with geometric discontinuities exhibiting radii of curvature of greater than approximately 1000.ANG. are provided which substantially improve electron emission levels and relax tip/edge feature requirements. Electron devices employing such electron sources are described including image generation electron devices, light source electron devices, and information signal amplifier electron devices.
Abstract translation: 使用电子源的电子器件包括具有非常低/负电子亲和力的表面的材料，例如II-B型金刚石的111晶体平面。 提供具有大于约1000（Aangstroem）的曲率半径的几何不连续性的电子源，其基本上改善电子发射水平并缓和尖端/边缘特征要求。 描述了使用这种电子源的电子器件，其包括图像生成电子器件，光源电子器件和信息信号放大器电子器件。
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公开(公告)号：US4410831A
公开(公告)日：1983-10-18
申请号：US333613
申请日：1981-12-22
Applicant: Daizo Shigemori , Yuji Muramatsu
Inventor： Daizo Shigemori , Yuji Muramatsu
Abstract: An overvoltage protecting element of the invention has a pair of main electrodes, the discharging surfaces of which oppose each other with a gap therebetween in a cylindrical body of an insulator, and a conductive member which is formed on the inner wall surface of the cylindrical body to oppose the main electrodes with a gap therebetween, and a plurality of extended parts of which extending in the circumferential direction of the cylindrical body being connected in the axial direction of the cylindrical body. The main electrodes and the conductive member are electrically connected to each other by capacitive coupling.
Abstract translation: 本发明的过电压保护元件具有一对主电极，其排出表面在绝缘体的圆筒体中彼此相对且间隔开，并且形成在圆筒体的内壁表面上的导电构件 以与主体电极相对的方式与主体电极相对，并且沿筒体的圆周方向延伸的多个延伸部在圆筒体的轴向连接。 主电极和导电构件通过电容耦合彼此电连接。
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