公开(公告)号：US10901402B2

公开(公告)日：2021-01-26

申请号：US16174070

申请日：2018-10-29

Applicant: Applied Materials Israel Ltd.

Inventor： Gadi Greenberg ,  Idan Kaizerman ,  Zeev Zohar

IPC: G06T7/00 ,  G05B19/418 ,  H01J37/00 ,  H01L21/66

Abstract: Inspection apparatus includes an imaging module, which is configured to capture images of defects at different, respective locations on a sample. A processor is coupled to process the images so as to automatically assign respective classifications to the defects, and to autonomously control the imaging module to continue capturing the images responsively to the assigned classifications.

公开(公告)号：US10886099B2

公开(公告)日：2021-01-05

申请号：US16282897

申请日：2019-02-22

Applicant: JEOL Ltd.

Inventor： Yuji Kohno ,  Akiho Nakamura

IPC: H01J37/00 ,  H01J37/22 ,  H01J37/28 ,  H01J37/26 ,  H01J37/153

Abstract: There is provided a method of aberration measurement capable of reducing the effects of image drift. The novel method of aberration measurement is for use in an electron microscope. The method comprises the steps of: acquiring a first image that is a TEM (transmission electron microscope) image of a sample; scanning the illumination angle of an electron beam impinging on the sample and acquiring a second image by multiple exposure of a plurality of TEM images generated at different illumination angles; and calculating aberrations from the first and second images.

公开(公告)号：US10714311B2

公开(公告)日：2020-07-14

申请号：US16179731

申请日：2018-11-02

Applicant: NuFlare Technology, Inc. ,  NuFlare Technology America, Inc.

Inventor： Yoshikuni Goshima ,  Victor Katsap ,  Rodney Kendall

IPC: H01J37/00 ,  H01J37/304 ,  G03F7/20 ,  H01J37/317 ,  H01J37/244

Abstract: An individual beam detector for multiple beams includes a thin film in which a passage hole smaller than a pitch between beams of multiple beams and larger than the diameter of a beam is formed and through which the multiple beams can penetrate, a support base to support the thin film in which an opening is formed under the region including the passage hole, and the width size of the opening is formed to have a temperature of the periphery of the passage hole higher than an evaporation temperature of impurities adhering to the periphery in the case that the thin film is irradiated with the multiple beams, and a sensor arranged, at the position away from the thin film by a distance based on which a detection target beam having passed the passage hole can be detected by the sensor as a detection value with contrast discernible.

公开(公告)号：US10670960B2

公开(公告)日：2020-06-02

申请号：US16008573

申请日：2018-06-14

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Kiet A. Chau ,  Son T. Chau

IPC: H01J37/00 ,  G03F1/80 ,  H01J37/317 ,  H01L21/311 ,  H01L21/265 ,  H01L21/02 ,  G03F1/82 ,  H05H3/02 ,  H01J37/147 ,  H01J37/05 ,  H01J37/32 ,  H01L29/36 ,  B24B37/04

Abstract: A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

公开(公告)号：US10586677B1

公开(公告)日：2020-03-10

申请号：US16288319

申请日：2019-02-28

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Shiro Okada

IPC: H01J37/00 ,  H01J37/147 ,  H01J37/317 ,  G03F7/20 ,  H01J37/20

Abstract: A semiconductor apparatus according to an embodiment is a semiconductor apparatus including substrate having a recess provided at a first substrate face, a plurality of through holes provided in a predetermined region of the recess, and a plurality of protrusions provided on the recess in the predetermined region.

公开(公告)号：US10577690B2

公开(公告)日：2020-03-03

申请号：US15492928

申请日：2017-04-20

Applicant: Applied Materials, Inc.

Inventor： Anh N. Nguyen ,  Dmitry Lubomirsky ,  Mehmet Tugrul Samir

IPC: H01J37/00 ,  C23C16/455

Abstract: Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

公开(公告)号：US10546753B2

公开(公告)日：2020-01-28

申请号：US16038863

申请日：2018-07-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideaki Yamasaki ,  Takamichi Kikuchi ,  Seishi Murakami

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/768 ,  H01J37/00 ,  H01L21/67 ,  H01L21/683

Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.

公开(公告)号：US10529540B2

公开(公告)日：2020-01-07

申请号：US15939835

申请日：2018-03-29

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Christopher Talone ,  Alok Ranjan

IPC: H01J37/00 ,  H01J37/32

Abstract: Methods and systems for treating a substrate are described. In an embodiment, a method may include receiving a microelectronic substrate in a plasma processing chamber. A method may also include receiving process gas in the plasma processing chamber. Additionally, a method may include applying energy to the process gas with a first energy source and applying energy to the process gas with a second energy source. The method may further include selectively adjusting at least one of the first energy source and the second energy source between a first state and a second state.

公开(公告)号：US10510550B2

公开(公告)日：2019-12-17

申请号：US16140730

申请日：2018-09-25

Applicant: The Board of Trustees of the University of Illinois

Inventor： Jason A. Peck ,  David N. Ruzic

IPC: H01L21/3065 ,  H01L21/268 ,  H01L21/324 ,  H01J37/00 ,  H01L21/67

Abstract: A method of laser-assisted plasma etching with polarized light comprises providing a surface of a substrate that includes at least one surface region having trenches arranged in a unidirectional pattern along an x-direction or a y-direction of the surface, where each trench has a depth along a z-direction. The trenches extend substantially in parallel with each other and have a half-pitch of about 100 nm or less. The surface is exposed to a plasma and simultaneously illuminated with a pulsed laser beam having a predetermined polarization along the x-direction or the y-direction, and the trenches are etched.

公开(公告)号：US10418246B2

公开(公告)日：2019-09-17

申请号：US15802040

申请日：2017-11-02

Applicant: Applied Materials, Inc.

Inventor： Takashi Kuratomi ,  Avgerinos V. Gelatos ,  I-Cheng Chen ,  Faruk Gungor

IPC: H01L21/285 ,  C23C16/06 ,  C23C16/455 ,  C23C16/50 ,  C23C16/04 ,  C23C16/14 ,  C23C16/452 ,  H01J37/00 ,  H01L21/3205 ,  H01L21/67

Abstract: Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.