公开(公告)号：US12224190B2

公开(公告)日：2025-02-11

申请号：US18539754

申请日：2023-12-14

Applicant: ASM IP Holding B.V.

Inventor： Andrew Michael Yednak, III

IPC: H01L21/67 ,  F16K3/24 ,  F16K27/12 ,  F16L55/132

Abstract: A valve assembly may provide a body comprising a bottom portion and a top portion having a threaded region, a closing mechanism situated above the top portion of the body, an actuator in communication with the closing mechanism, a nut configured to attach to the threaded region, and a threaded hole extending into at least one of the bottom portion of the body or the nut.

公开(公告)号：US12222644B2

公开(公告)日：2025-02-11

申请号：US17231299

申请日：2021-04-15

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Krzysztof Kamil Kachel ,  David Kurt de Roest

IPC: G03F7/004 ,  C23C16/455 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027

Abstract: The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.

公开(公告)号：US20250043427A1

公开(公告)日：2025-02-06

申请号：US18785394

申请日：2024-07-26

Applicant: ASM IP Holding B.V.

Inventor： Songwhe Herr ,  Dongok Shin ,  KiChul Um

IPC: C23C16/505 ,  C23C16/455

Abstract: A wafer processing apparatus with improved film uniformity is presented. The apparatus comprising a radio frequency (RF) enclosure enclosing and defining a reaction chamber; a showerhead placed inside of the reaction chamber configured to generating plasma for processing a wafer in the reaction chamber; a radio frequency (RF) power supply configured to generate RF and supply the generated RF to the showerhead; a plurality of capacitors connected in parallel and/or in serial between the RF power supply and the showerhead; and more than one auxiliary ground lines configured to be placed above the showerhead. The auxiliary ground lines are to be turned on sequentially for improving map profile.

公开(公告)号：US20250043416A1

公开(公告)日：2025-02-06

申请号：US18787053

申请日：2024-07-29

Applicant: ASM IP Holding B.V.

Inventor： Iordan Iordanov ,  Osama Khalil ,  Allen D'Ambra

IPC: C23C16/40 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56

Abstract: Protected metallic components and reaction chambers including protected metallic components are disclosed. Exemplary methods for forming and utilizing protected metallic components are also disclosed. Protected metallic components include a conformal protective layer disposed over a non-planar surface of a metallic core.

公开(公告)号：USD1060598S1

公开(公告)日：2025-02-04

申请号：US29817804

申请日：2021-12-03

Applicant: ASM IP Holding B.V.

Designer： Shuyang Zhang ,  Ankit Kimtee

公开(公告)号：US12218269B2

公开(公告)日：2025-02-04

申请号：US17172082

申请日：2021-02-10

Applicant: ASM IP Holding B.V.

Inventor： Kazuhiro Nishiwaki

IPC: H01L31/18 ,  G01J1/42 ,  G01N21/27 ,  H01J37/32

Abstract: Examples of a substrate processing apparatus includes a chamber configured to contain a stage, a light receiving device configured to receive light inside the chamber, and a substrate transfer apparatus that includes a shaft and a rotation arm configured to rotate with rotation of the shaft and is configured to supply a plurality of light beams having different amounts of light to the light receiving device.

公开(公告)号：US12218000B2

公开(公告)日：2025-02-04

申请号：US17481979

申请日：2021-09-22

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang

IPC: H01L21/764 ,  H01L21/768

Abstract: A substrate processing method of easily forming an air gap includes: forming a first insulating layer having a first step coverage on a patterned structure including a first protrusion and a second protrusion; and forming, on the first insulating layer, a second insulating layer having a second step coverage lower than the first step coverage, wherein an air gap is formed between the first protrusion and the second protrusion by repeating the forming of the second insulating layer.

公开(公告)号：US20250037995A1

公开(公告)日：2025-01-30

申请号：US18914767

申请日：2024-10-14

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US20250037993A1

公开(公告)日：2025-01-30

申请号：US18777790

申请日：2024-07-19

Applicant: ASM IP Holding B.V.

Inventor： Tomomi Ban ,  Annisa Noorhidayati ,  Ling Chi Hwang

IPC: H01L21/02

Abstract: A method of forming dielectric material layer on a surface of a substrate is provided. The method may comprise: providing a substrate within a reaction chamber; flowing a precursor on the substrate within the reaction chamber; flowing a reactant on to the substrate; and generating a plasma by a dual radio frequency (RF) plasma source including a high frequency (HF) component and a low frequency (LF) component. By generating the plasma, the precursor reacts with the reactant to form a layer and a pressure in the reaction chamber during at least the step of providing the plasma is between 2,000 and 4,000 Pa.

公开(公告)号：US20250029853A1

公开(公告)日：2025-01-23

申请号：US18775963

申请日：2024-07-17

Applicant: ASM IP Holding B.V.

Inventor： Christopher Cillie

IPC: H01L21/67 ,  G01J5/48 ,  H01L21/66

Abstract: A semiconductor processing system includes a chamber body, a substrate support, a pyrometer, and a controller. The substrate support is arranged within an interior of the chamber body and is supported for rotation about a rotation axis. The pyrometer is supported above the chamber body, is radially offset from the rotation axis, and is optically coupled to the interior of the chamber body. The controller is operably connected to the substrate support and is disposed in communication with the pyrometer. The controller is further responsive to instructions recorded on a non-transitory machine-readable memory to seat a substrate on the substrate support, acquire a temperature measurement acquired using electromagnetic radiation emitted by the substrate, and determine decentering of the substrate relative to the rotation axis using the electromagnetic radiation received at the pyrometer. Material layer deposition methods and computer program products are also described.