公开(公告)号：US08736145B2

公开(公告)日：2014-05-27

申请号：US13128032

申请日：2009-11-25

Applicant: Lianjun Liu ,  Sergio Pacheco ,  Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey

Inventor： Lianjun Liu ,  Sergio Pacheco ,  Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey

IPC: H01L41/06 ,  H01L41/09

CPC classification number: B81B3/0072 ,  B81B2201/032 ,  H01L41/0933 ,  H01L41/094

Abstract: A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer having a first thermal response characteristic, at least one layer of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer. The thermal compensation layer is different to the at least one layer and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.

Abstract translation: 形成在半导体衬底上的微型或纳米机电换能器装置包括可移动结构，其被布置成响应于致动结构的致动而是可移动的。 可移动结构包括具有至少一个具有第一热响应特性的机械层的机械结构，至少一层致动结构具有不同于第一热响应特性的第二热响应特性，以及至少具有至少 一个热补偿层。 热补偿层不同于至少一个层，并且被布置成补偿由机械层和致动结构的至少一个层产生的热效应，使得可移动结构的运动基本上与温度变化无关 。

公开(公告)号：US08715517B2

公开(公告)日：2014-05-06

申请号：US13314844

申请日：2011-12-08

Applicant: Bruno Imbert ,  Emmanuel Defay ,  Chrystel Deguet ,  Hubert Moriceau ,  Mathieu Pijolat

Inventor： Bruno Imbert ,  Emmanuel Defay ,  Chrystel Deguet ,  Hubert Moriceau ,  Mathieu Pijolat

IPC: H03H3/08 ,  H03H3/00 ,  B32B37/30

CPC classification number: H03H3/08 ,  B32B37/30 ,  H03H3/00 ,  H03H3/02 ,  H03H9/173 ,  H03H2003/021

Abstract: A process for fabricating an acoustic wave resonator comprising a suspended membrane comprising a piezoelectric material layer, comprises the following steps: production of a first stack comprising at least one layer of first piezoelectric material on the surface of a first substrate; production of a second stack comprising at least one second substrate; production of at least one non-bonding initiating zone by deposition or creation of particles of controlled sizes leaving the surface of one of said stacks endowed locally with projecting nanostructures before a subsequent bonding step; direct bonding of said two stacks creating a blister between the stacks, due to the presence of the non-bonding initiating zone; and, thinning of the first stack to eliminate at least the first substrate.

Abstract translation: 一种用于制造包括压电材料层的悬浮膜的声波谐振器的方法，包括以下步骤：在第一衬底的表面上制备包括至少一层第一压电材料的第一叠层; 制备包括至少一个第二基底的第二叠层; 通过沉积或产生具有受控尺寸的颗粒的至少一个非结合起始区的产生，离开所述堆之一的表面在随后的结合步骤之前局部地赋予突出的纳米结构; 由于存在非结合起始区，所述两个堆叠的直接结合在堆叠之间产生泡罩; 以及使所述第一叠层变薄以至少消除所述第一衬底。

公开(公告)号：US08692443B2

公开(公告)日：2014-04-08

申请号：US13481476

申请日：2012-05-25

Applicant: Matthieu Cueff ,  Emmanuel Defay ,  Gwenael Le Rhun

Inventor： Matthieu Cueff ,  Emmanuel Defay ,  Gwenael Le Rhun

IPC: H01L41/047

CPC classification number: H01L41/29 ,  H01L41/0477 ,  H01L41/0478 ,  H01L41/0815

Abstract: An electrical component comprises a lead-based perovskite crystal material layer between a lower electrode on the surface of a substrate and an upper electrode, characterized in that the lower electrode comprises a stabilizing first layer made of a first material and a seeding second layer made of a second material, the first and second materials having the same chemical composition but different structural parameters and/or densities. A process for fabricating a component is also provided, in which the material with a perovskite structure may be PZT with a (100) or (111) orientation.

Abstract translation: 电气部件包括在基板表面的下电极和上电极之间的铅基钙钛矿晶体材料层，其特征在于，所述下电极包括由第一材料制成的稳定化第一层和由 第二材料，第一和第二材料具有相同的化学组成但不同的结构参数和/或密度。 还提供了一种制造组件的方法，其中具有钙钛矿结构的材料可以是具有（100）或（111）取向的PZT。

公开(公告)号：US08513042B2

公开(公告)日：2013-08-20

申请号：US13320579

申请日：2010-06-15

Applicant: Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

Inventor： Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

IPC: H01L21/00

CPC classification number: B81C1/00666 ,  B81B2203/0118 ,  B81C2201/0167 ,  B81C2201/0169

Abstract: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.

Abstract translation: 一种形成机电换能器装置的方法包括在固定结构上形成机电换能器装置的可移动结构和致动结构，其中可移动结构被布置成在机电换能器装置的操作中相对于固定结构可移动 响应致动结构的致动。 该方法还包括在提供应力修剪层之后，在可移动结构的至少一部分上提供应力修剪层，将可移动结构从固定结构释放以提供释放的机电换能器装置，以及在释放可移动结构之后，改变应力 释放的机电换能器装置的应力修剪层，使得当机电换能器装置处于关闭状态时，可移动结构相对于固定结构偏转预定量。

公开(公告)号：US08460987B2

公开(公告)日：2013-06-11

申请号：US13097686

申请日：2011-04-29

Applicant: Marc Aid ,  Emmanuel Defay ,  Aude Lefevre ,  Guy-Michel Parat

Inventor： Marc Aid ,  Emmanuel Defay ,  Aude Lefevre ,  Guy-Michel Parat

IPC: H01L21/20

CPC classification number: H01L21/31122 ,  H01L21/31105 ,  H01L41/316 ,  H01L41/332

Abstract: A method for producing a layer of AlN having substantially vertical sides relative to the surface of a substrate, including: the formation of an AlN growth layer on a substrate, the deposition of the AlN layer, on at least said growth layer, the formation of a mask layer over the AlN layer, at least one edge of which is aligned with at least one edge or side of the growth layer, in a plane which is substantially perpendicular to a surface of the substrate or a surface of the growth layer, and the etching of the AlN layer.

Abstract translation: 一种制造具有相对于衬底表面具有大致垂直侧面的AlN层的方法，包括：在衬底上形成AlN生长层，在至少所述生长层上沉积AlN层，形成 在AlN层上的掩模层，其至少一个边缘与生长层的至少一个边缘或一侧对准，该平面基本垂直于基底的表面或生长层的表面，以及 蚀刻AlN层。

公开(公告)号：US20120206216A1

公开(公告)日：2012-08-16

申请号：US13500614

申请日：2010-10-04

Applicant: Chrystel Deguet ,  Laurent Clavelier ,  Emmanuel Defay ,  Alexandre Reinhardt

Inventor： Chrystel Deguet ,  Laurent Clavelier ,  Emmanuel Defay ,  Alexandre Reinhardt

IPC: H03H9/205 ,  H03H3/02

CPC classification number: H03H3/08 ,  H03H3/02 ,  H03H2003/0071 ,  Y10T29/42

Abstract: An acoustic wave device comprising at least one surface acoustic wave filter and one bulk acoustic wave filter, the device including, on a substrate comprising a second piezoelectric material: a stack of layers including a first metal layer and a layer of a first monocrystalline piezoelectric material, wherein the stack of layers is partially etched so as to define a first area in which the first and second piezoelectric materials are present and a second area in which the first piezoelectric material is absent; a second metallization at the first area for defining the bulk acoustic wave filter integrating the first piezoelectric material, and a third metallization at the second area for defining the surface acoustic wave filter integrating the second piezoelectric material.

Abstract translation: 一种声波装置，包括至少一个表面声波滤波器和一个体声波滤波器，该装置包括在包括第二压电材料的基板上，包括第一金属层和第一单晶压电材料层 其中，所述层的一部分被部分蚀刻以限定其中存在所述第一和第二压电材料的第一区域和不存在所述第一压电材料的第二区域; 在第一区域处的第二金属化，用于限定集成第一压电材料的体声滤波器，以及在第二区域处的第三金属化，用于限定整合第二压电材料的表面声波滤波器。

公开(公告)号：US20120056308A1

公开(公告)日：2012-03-08

申请号：US13320579

申请日：2010-06-15

Applicant: Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

Inventor： Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

IPC: H01L29/66 ,  H01L21/66

CPC classification number: B81C1/00666 ,  B81B2203/0118 ,  B81C2201/0167 ,  B81C2201/0169

Abstract: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.

Abstract translation: 一种形成机电换能器装置的方法包括在固定结构上形成机电换能器装置的可移动结构和致动结构，其中可移动结构被布置成在机电换能器装置的操作中相对于固定结构可移动 响应致动结构的致动。 该方法还包括在提供应力修剪层之后，在可移动结构的至少一部分上提供应力修剪层，将可移动结构从固定结构释放以提供释放的机电换能器装置，以及在释放可移动结构之后，改变应力 释放的机电换能器装置的应力修剪层，使得当机电换能器装置处于关闭状态时，可移动结构相对于固定结构偏转预定量。

公开(公告)号：US08076169B2

公开(公告)日：2011-12-13

申请号：US12488882

申请日：2009-06-22

Applicant: Francois Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

Inventor： Francois Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

IPC: H01L21/00

CPC classification number: B81C1/00238 ,  B81B2201/0271 ,  B81C1/00357 ,  B81C2201/0115 ,  B81C2201/014 ,  B81C2201/0191

Abstract: The invention relates to a method of fabricating an electromechanical device including an active element, wherein the method comprises the following steps:a) making a monocrystalline first stop layer on a monocrystalline layer of a first substrate;b) growing a monocrystalline mechanical layer epitaxially on said first stop layer out of at least one material that is different from that of the stop layer;c) making a sacrificial layer on said active layer out of a material that is suitable for being etched selectively relative to said mechanical layer;d) making a bonding layer on the sacrificial layer;e) bonding a second substrate on the bonding layer; andf) eliminating the first substrate and the stop layer to reveal the surface of the mechanical layer opposite from the sacrificial layer, the active element being made by at least a portion of the mechanical layer.

Abstract translation: 本发明涉及一种制造包括有源元件的机电装置的方法，其中该方法包括以下步骤：a）在第一衬底的单晶层上制备单晶第一阻挡层; b）在所述第一停止层上外延生长至少一种不同于所述停止层的材料的单晶机械层; c）在适合于相对于所述机械层选择性蚀刻的材料中在所述有源层上制造牺牲层; d）在牺牲层上形成结合层; e）在接合层上粘合第二衬底; 以及f）消除所述第一衬底和所述阻挡层以露出与所述牺牲层相对的所述机械层的表面，所述有源元件由所述机械层的至少一部分制成。

公开(公告)号：US20110280276A1

公开(公告)日：2011-11-17

申请号：US13101478

申请日：2011-05-05

Applicant: Jean-Francois Mainguet ,  Alain Chambron ,  Bruno Charrat ,  Emmanuel Defay ,  Guy-Michel Parat

Inventor： Jean-Francois Mainguet ,  Alain Chambron ,  Bruno Charrat ,  Emmanuel Defay ,  Guy-Michel Parat

IPC: G01K3/10 ,  H01L21/02

CPC classification number: G06K9/0002 ,  G01J5/024 ,  G01J5/046 ,  G01J5/10 ,  G01J5/34 ,  G01J2005/0048 ,  G01K3/10 ,  G01K7/003 ,  G06K9/00053

Abstract: A transducer for transducing time-related temperature variations into a difference in potentials includes an upper conductive electrode designed to be exposed to a time-related temperature variation to be measured, a lower conductive electrode, and at least one layer of pyroelectric material based on a III-V nitride directly interposed between the upper and lower conductive electrodes to generate, between the upper and lower conductive electrodes, a difference in potentials corresponding to the temperature variation even in the absence of external mechanical stress.

Abstract translation: 用于将与时间有关的温度变化转换为电位差的换能器包括被设计为暴露于要测量的时间相关温度变化的上导电电极，下导电电极和至少一层基于 直接介于上下导电电极之间的III-V族氮化物，即使在没有外部机械应力的情况下，在上下导电电极之间产生与温度变化相对应的电位差。

公开(公告)号：US20110248602A1

公开(公告)日：2011-10-13

申请号：US12975974

申请日：2010-12-22

Applicant: Emmanuel DEFAY ,  Sebastien Boisseau ,  Ghislain Despesse ,  Brice Ivira ,  Alexandre Reinhardt

Inventor： Emmanuel DEFAY ,  Sebastien Boisseau ,  Ghislain Despesse ,  Brice Ivira ,  Alexandre Reinhardt

IPC: H01L41/04 ,  H01L41/22

CPC classification number: H03H9/02015 ,  H03H3/04 ,  H03H9/02031 ,  H03H9/173 ,  H03H9/175 ,  H03H9/583 ,  H03H9/584 ,  H03H9/585 ,  H03H2003/0414 ,  H03H2009/02196 ,  Y10T29/42

Abstract: Acoustic resonator comprising an electret, and method of producing said resonator, application to switchable coupled resonator filters.The resonator comprises: at least one piezoelectric layer (30); electrodes (24, 26) on either side of this layer; and at least one electret layer (32) between the electrodes, to apply a permanent electric field to the piezoelectric layer. The intensity of this electric field is determined to shift the resonance frequency of the resonator by a desired value. The piezoelectric layer may contain electrical charges to itself constitute the electret layer.

Abstract translation: 包括驻极体的声谐振器及其制造方法，可应用于可切换耦合的谐振滤波器。 所述谐振器包括：至少一个压电层（30）; 该层两侧的电极（24,26）; 和在电极之间的至少一个驻极体层（32），以向压电层施加永久电场。 确定该电场的强度以将谐振器的谐振频率偏移所需的值。 压电层可以包含电荷本身构成驻极体层。