公开(公告)号：US08552373B2

公开(公告)日：2013-10-08

申请号：US13321583

申请日：2010-05-18

Applicant: Momoyo Enyama ,  Hiroya Ohta ,  Taku Ninomiya ,  Mari Nozoe

Inventor： Momoyo Enyama ,  Hiroya Ohta ,  Taku Ninomiya ,  Mari Nozoe

IPC: H01J37/26 ,  H01J37/28 ,  G01N23/22 ,  G01N23/225

CPC classification number: H01J37/28 ,  H01J37/265 ,  H01J2237/2446 ,  H01J2237/2817

Abstract: Disclosed is a charged particle beam device, wherein multibeam secondary electron detectors (121a, 121b, 121c) and a single beam detector (140; 640) are provided, and under the control of a system control unit (135), an optical system control circuit (139) controls a lens and a beam selecting diaphragm (141) and switches the electrooptical conditions between those for multibeam mode and those for single beam mode, thereby one charged particle beam device can be operated as a multibeam charged particle device and a single beam charged particle device by switching. Thus, observation conditions are flexibly changed in accordance with an object to be observed, and a sample can be observed with a high accuracy and high efficiency.

Abstract translation: 公开了一种带电粒子束装置，其中提供多波束二次电子检测器（121a，121b，121c）和单光束检测器（140; 640），并且在系统控制单元（135）的控制下，光学系统控制 电路（139）控制透镜和选择光阑（141），并将电光条件切换到用于多光束模式的光学条件和单光束模式之间，从而一个带电粒子束装置可以作为多光束带电粒子装置和单个 光束带电粒子装置通过切换。 因此，观察条件根据待观察的目标灵活地变化，并且可以高精度和高效率地观察样品。

公开(公告)号：US08350214B2

公开(公告)日：2013-01-08

申请号：US13143404

申请日：2010-01-04

Applicant: Hiroki Otaki ,  Momoyo Enyama ,  Hiroya Ohta

Inventor： Hiroki Otaki ,  Momoyo Enyama ,  Hiroya Ohta

IPC: H01L21/66 ,  G01N23/225

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G01R31/305 ,  H01J37/3023 ,  H01J2237/004 ,  H01J2237/0044

Abstract: Provided is a multi-beam type charged particle beam applied apparatus in an implementable configuration, capable of achieving both high detection accuracy of secondary charged particles and high speed of processing characteristically different specimens. An aperture array (111) includes plural aperture patterns. A deflector (109) for selecting an aperture pattern through which a primary beam passes is disposed at the position of a charged particle source image created between an electron gun (102), i.e., a charged particle source, and the aperture array (111). At the time of charge-control beam illumination and at the time of signal-detection beam illumination, an aperture pattern of the aperture array (111) is selected, and conditions of a lens array (112), surface electric-field control electrode (118) and the like are switched in synchronization with each beam scanning. Thus, the charges are controlled and the signals are detected at different timings under suitable conditions, respectively.

Abstract translation: 提供了一种可实现的多束式带电粒子束施加装置，能够实现二次带电粒子的高检测精度和加工特性不同的试样的高速度。 孔径阵列（111）包括多个孔径图案。 用于选择主光束通过的孔径图案的偏转器（109）设置在电子枪（102）（即带电粒子源）与孔径阵列（111）之间产生的带电粒子源图像的位置处， 。 在充电控制光束照明时，在信号检测光束照射时，选择孔径阵列（111）的孔径图案，透镜阵列（112），表面电场控制电极（ 118）等与每个波束扫描同步地切换。 因此，控制电荷并且在合适的条件下分别在不同的定时检测信号。

公开(公告)号：US07906761B2

公开(公告)日：2011-03-15

申请号：US12037623

申请日：2008-02-26

Applicant: Sayaka Tanimoto ,  Hiroya Ohta ,  Hiroshi Makino ,  Ryuichi Funatsu

Inventor： Sayaka Tanimoto ,  Hiroya Ohta ,  Hiroshi Makino ,  Ryuichi Funatsu

IPC: G01N23/225 ,  H01J49/00

CPC classification number: G01N23/225 ,  H01J37/265 ,  H01J37/28

Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.

Abstract translation: 一种能够实现多光束型半导体检查装置中具有各种性质的样品的高缺陷检测灵敏度和高检测速度的带电粒子束装置。 使样品上的一次光束的分配是可变的，此外，基于样品的性质选择用于以最佳检查规格和高速进行检查的光束分配。 此外，优化了许多光学参数和设备参数。 此外，测量和调整所选择的一次光束的性质。

公开(公告)号：US07880143B2

公开(公告)日：2011-02-01

申请号：US11958717

申请日：2007-12-18

Applicant: Sayaka Tanimoto ,  Hiroya Ohta ,  Hiroshi Makino ,  Ryuichi Funatsu

Inventor： Sayaka Tanimoto ,  Hiroya Ohta ,  Hiroshi Makino ,  Ryuichi Funatsu

IPC: H01J37/26

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J2237/0435 ,  H01J2237/2448 ,  H01J2237/24564 ,  H01J2237/24592

Abstract: A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.

Abstract translation: 由单个电子源形成多个主光束，通过至少一个主光束来控制样品的表面电荷，同时使用除此之外的一次光束进行样品的检查。 此外，对于用于表面电荷控制的一次光束的曝光区域和用于检查的主光束的曝光区域，单独设置表面电场强度。 此外，控制用于表面电荷控制的主光束的电流以及用于表面电荷控制的主光束和用于检查的主光束之间的间隔。

公开(公告)号：US07863565B2

公开(公告)日：2011-01-04

申请号：US12149512

申请日：2008-05-02

Applicant: Masaki Hasegawa ,  Hiroya Ohta

Inventor： Masaki Hasegawa ,  Hiroya Ohta

IPC: H01J37/26 ,  H01J37/29

CPC classification number: G01N23/225 ,  H01J37/026 ,  H01J37/285 ,  H01J37/29 ,  H01J2237/0047 ,  H01J2237/221 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/2482 ,  H01J2237/2855

Abstract: An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained. Moreover, an amount-of-ultraviolet ray adjustment mechanism is controlled on the monitor so that an amount of the ultraviolet rays is adjusted while observing a reflected-electron image obtained during ultraviolet irradiation.

Abstract translation: 电子束检查装置对反射电子进行成像并消除由电子束照射产生的负电荷。 照射紫外线，照射紫外线的区域作为光电子图像显示。 光电子图像和反射电子图像在彼此重叠的状态下显示在监视器上，以容易地掌握图像之间的位置关系和它们之间的尺寸差异。 具体地，电子束的照射区域的形状包括在显示屏上照射的紫外线区域的形状。 调整电子束的照射区域中的紫外线的强度，同时维持反射电子图像的反射电子成像条件。 此外，在监视器上控制紫外线量调节机构，使得在观察紫外线照射期间获得的反射电子图像的同时调节紫外线的量。

公开(公告)号：US20080230697A1

公开(公告)日：2008-09-25

申请号：US12037623

申请日：2008-02-26

Applicant: Sayaka TANIMOTO ,  Hiroya OHTA ,  Hiroshi MAKINO ,  Ryuichi FUNATSU

Inventor： Sayaka TANIMOTO ,  Hiroya OHTA ,  Hiroshi MAKINO ,  Ryuichi FUNATSU

IPC: G01N23/225

CPC classification number: G01N23/225 ,  H01J37/265 ,  H01J37/28

Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.

Abstract translation: 一种能够实现多光束型半导体检查装置中具有各种性质的样品的高缺陷检测灵敏度和高检测速度的带电粒子束装置。 使样品上的一次光束的分配是可变的，此外，基于样品的性质选择用于以最佳检查规格和高速进行检查的光束分配。 此外，优化了许多光学参数和设备参数。 此外，测量和调整所选择的一次光束的性质。

公开(公告)号：US07230252B2

公开(公告)日：2007-06-12

申请号：US11337444

申请日：2006-01-24

Applicant: Masato Muraki ,  Hiroya Ohta

Inventor： Masato Muraki ,  Hiroya Ohta

IPC: H01J37/42

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/30433

Abstract: An aberration adjusting method of a charged particle beam optical system. The method includes an aberration measuring step of measuring N aberrations of the charged particle beam optical system, an aberration sensitivity acquiring step of changing M control amounts to control optical elements included in the charged particle beam optical system, obtaining variations of the N aberrations by executing the aberration measuring step, and obtaining aberration sensitivities of the M control amounts. The method further includes a control amount deciding step of deciding the M control amounts on the basis of the N aberrations and the aberration sensitivities of the M control amounts to set the N aberrations to target aberrations. The aberration is a displacement of each image height of charged particles beams. The control amount is an amount for controlling a position of the charged particle beams, and M

Abstract translation: 带电粒子束光学系统的像差调整方法。 该方法包括测量带电粒子束光学系统的N个像差的像差测量步骤，改变M个控制量以控制包含在带电粒子束光学系统中的光学元件的像差灵敏度获取步骤，通过执行N个畸变来获得N个像差的变化 像差测量步骤，并获得M个控制量的像差灵敏度。 该方法还包括控制量决定步骤，用于根据M个控制量的N个像差和像差灵敏度来确定M个控制量，以将N个像差设置为目标像差。 像差是带电粒子束的每个图像高度的位移。 控制量是用于控制带电粒子束的位置的量，M

公开(公告)号：US07126140B2

公开(公告)日：2006-10-24

申请号：US11213750

申请日：2005-08-30

Applicant: Haruo Yoda ,  Yasunari Souda ,  Hiroya Ohta ,  Yoshikiyo Yui ,  Shinichi Hashimoto

Inventor： Haruo Yoda ,  Yasunari Souda ,  Hiroya Ohta ,  Yoshikiyo Yui ,  Shinichi Hashimoto

IPC: H01J37/08

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/31764 ,  H01J2237/31767

Abstract: A multi-electron beam exposure method and apparatus, wherein electron beams are applied to a sample surface mounted on a traveling sample stage to perform repeated exposure of chip patterns. An exposure region of the sample surface is partitioned into multiple stripe regions having a width in an x-axis direction, and each of the multiple stripe regions is further partitioned into multiple main fields having a width in a y-axis direction. At least one of the widths of the main fields in the x- and y-axis directions is set to a value, and exposure pattern data for one chip based on the partitioned main fields is stored as a unit. The stored exposure pattern data is readout a number of times corresponding to the number of chips repeatedly, and each electron beam provides repeated exposure of same regions of the chips.

Abstract translation: 一种多电子束曝光方法和装置，其中将电子束施加到安装在行进样品台上的样品表面，以进行芯片图案的重复曝光。 将样品表面的曝光区域划分为具有x轴方向宽度的多个条纹区域，并且将多个条纹区域中的每一个进一步划分为具有y轴方向宽度的多个主场。 将x轴方向和y轴方向上的主场的宽度中的至少一个设定为一个值，并且将基于分割的主场的一个芯片的曝光图案数据作为一个单元存储。 存储的曝光图案数据被重复读出与芯片数量相对应的次数，并且每个电子束提供芯片的相同区域的重复曝光。

公开(公告)号：US20060169898A1

公开(公告)日：2006-08-03

申请号：US11337603

申请日：2006-01-24

Applicant: Masato Muraki ,  Hiroya Ohta

Inventor： Masato Muraki ,  Hiroya Ohta

IPC: G21K7/00 ,  G21K5/10

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/30433

Abstract: In order to measure an aberration of a charged particle beam optical system, an aberration measuring machine includes a charged particle generating unit adapted to make a plurality of charged particle beams strike the object plane of the charged particle beam optical system at different incident angles, and a detecting unit adapted to detect a position where the plurality of charged particle beams form images on the image surface of the charged particle beam optical system. The charged particle generating unit includes electron optical systems corresponding to the charged particle beams and an aperture stop to make the charged particle beams corresponding to pupil positions of the electron optical systems incident on the object plane at different incident angles.

Abstract translation: 为了测量带电粒子束光学系统的像差，像差测量机包括一个带电粒子产生单元，适于使多个带电粒子束以不同的入射角度撞击带电粒子束光学系统的物平面，以及 检测单元，其适于检测多个带电粒子束在带电粒子束光学系统的图像表面上形成图像的位置。 带电粒子产生单元包括对应于带电粒子束的电子光学系统和孔径光阑，以使得对应于以不同入射角入射在物平面上的电子光学系统的光瞳位置的带电粒子束。

公开(公告)号：US20060017021A1

公开(公告)日：2006-01-26

申请号：US11213750

申请日：2005-08-30

Applicant: Haruo Yoda ,  Yasunari Souda ,  Hiroya Ohta ,  Yoshikiyo Yui ,  Shinichi Hashimoto

Inventor： Haruo Yoda ,  Yasunari Souda ,  Hiroya Ohta ,  Yoshikiyo Yui ,  Shinichi Hashimoto

IPC: G21K5/10

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/31764 ,  H01J2237/31767

Abstract: A multi-electron beam exposure method and apparatus, wherein electron beams are applied to a sample surface mounted on a traveling sample stage to perform repeated exposure of chip patterns. An exposure region of the sample surface is partitioned into multiple stripe regions having a width in an x-axis direction, and each of the multiple stripe regions is further partitioned into multiple main fields having a width in a y-axis direction. At least one of the widths of the main fields in the x- and y-axis directions is set to a value, and exposure pattern data for one chip based on the partitioned main fields is stored as a unit. The stored exposure pattern data is readout a number of times corresponding to the number of chips repeatedly, and each electron beam provides repeated exposure of same regions of the chips.