公开(公告)号：US09184026B2

公开(公告)日：2015-11-10

申请号：US14626891

申请日：2015-02-19

Applicant: Mapper Lithography IP B.V.

Inventor： Marco Jan-Jaco Wieland

IPC: H01J37/30 ,  H01J37/302 ,  G21K5/04 ,  H01J37/317 ,  H01J37/04

CPC classification number: H01J37/3174 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/043 ,  H01J2237/0435 ,  H01J2237/31769

Abstract: The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant η is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0

Abstract translation: 本发明涉及一种用于执行带电粒子束邻近效应校正的方法，包括以下步骤：使用一个或多个带电粒子束将待图案化的数字布局图案接收到目标上; 选择包括α和β接近度函数之和的基本接近函数，其中所述α接近函数模拟短距离邻近效应，并且所述β接近函数模拟远距离邻近效应，其中恒定和近似函数 被定义为所述总和中β接近函数和α接近函数之间的比率，其中0 <＆eegr; <1; 确定对应于所述基本邻近效应函数的修改的接近度函数，其中所述α邻近函数已被Dirac delta函数代替，并且使用电子处理器执行所述数字布局图案与所述修改的接近函数的去卷积，以产生经校正的 布局模式。

公开(公告)号：US20150206740A1

公开(公告)日：2015-07-23

申请号：US14602318

申请日：2015-01-22

Applicant: MAPPER LITHOGRAPHY IP B.V

Inventor： Pieter Lucas BRANDT

IPC: H01L21/027 ,  H01J37/02 ,  H01J37/317 ,  H01L21/3205 ,  H01L23/48

CPC classification number: H01L21/0277 ,  H01J2237/0041 ,  H01J2237/20 ,  H01J2237/3175 ,  H01L21/32051 ,  H01L23/48 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for preparing a semiconductor target (10), the method comprising providing a semiconductor substrate (12) including a main substrate surface (14) which defines a substrate periphery (20) along an outer edge. The semiconductor substrate (12) further has an structure layer (30) arranged on the main substrate surface, and comprising a structure layer periphery (32) that is located inwards with respect to the substrate periphery, so as to leave exposed a peripheral substrate region (22) along the substrate periphery. The method further comprises applying an electrically conductive layer (38) on the structure layer, wherein the electrically conductive layer extends beyond the structure layer periphery to establish electrical contact in a contacting portion (23) of the peripheral substrate region.

Abstract translation: 一种制备半导体靶（10）的方法，所述方法包括提供半导体衬底（12），所述半导体衬底（12）包括沿着外边缘限定衬底周边（20）的主衬底表面（14）。 半导体衬底（12）还具有布置在主衬底表面上的结构层（30），并且包括相对于衬底周边位于内侧的结构层周边（32），以使外围衬底区域 （22）。 所述方法还包括在所述结构层上施加导电层（38），其中所述导电层延伸超过所述结构层周边以在所述外围基底区域的接触部分（23）中建立电接触。

公开(公告)号：US09082584B2

公开(公告)日：2015-07-14

申请号：US14585829

申请日：2014-12-30

Applicant: Mapper Lithography IP B.V.

Inventor： Jerry Peijster ,  Guido de Boer

IPC: H01J37/20 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01J37/20 ,  H01J37/3002 ,  H01J37/3174 ,  H01J2237/2007 ,  H01J2237/202 ,  H01J2237/20264 ,  H01J2237/20278 ,  H01J2237/20292 ,  H01J2237/3175

Abstract: The invention relates to a charged particle beam lithography system comprising: a charged particle optical column arranged in a vacuum chamber for projecting a charged particle beam onto a target, wherein the column comprises deflecting means for deflecting the charged particle beam in a deflection direction, a target positioning device comprising a carrier for carrying the target, and a stage for carrying and moving the carrier along a first direction, wherein the first direction is different from the deflection direction, wherein the target positioning device comprises a first actuator for moving the stage in the first direction relative to the charged particle optical column, wherein the carrier is displaceably arranged on the stage and wherein the target positioning device comprises retaining means for retaining the carrier with respect to the stage in a first relative position.

Abstract translation: 本发明涉及一种带电粒子束光刻系统，包括：带电粒子光学柱，布置在真空室中，用于将带电粒子束投射到靶上，其中该柱包括偏转装置，用于偏转带电粒子束的偏转方向， 目标定位装置，包括用于承载目标的载体，以及用于沿着第一方向承载和移动载体的载物台，其中所述第一方向不同于所述偏转方向，其中所述目标定位装置包括用于使所述载物台移动的第一致动器 相对于带电粒子光学柱的第一方向，其中所述载体可位移地布置在所述载物台上，并且其中所述目标定位装置包括用于将所述载体相对于所述载物台保持在第一相对位置的保持装置。

公开(公告)号：US20150162165A1

公开(公告)日：2015-06-11

申请号：US14585829

申请日：2014-12-30

Applicant: Mapper Lithography IP B.V.

Inventor： Jerry PEIJSTER ,  Guido de Boer

IPC: H01J37/20 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/20 ,  H01J37/3002 ,  H01J37/3174 ,  H01J2237/2007 ,  H01J2237/202 ,  H01J2237/20264 ,  H01J2237/20278 ,  H01J2237/20292 ,  H01J2237/3175

Abstract: The invention relates to a charged particle beam lithography system comprising: a charged particle optical column arranged in a vacuum chamber for projecting a charged particle beam onto a target, wherein the column comprises deflecting means for deflecting the charged particle beam in a deflection direction, a target positioning device comprising a carrier for carrying the target, and a stage for carrying and moving the carrier along a first direction, wherein the first direction is different from the deflection direction, wherein the target positioning device comprises a first actuator for moving the stage in the first direction relative to the charged particle optical column, wherein the carrier is displaceably arranged on the stage and wherein the target positioning device comprises retaining means for retaining the carrier with respect to the stage in a first relative position.

Abstract translation: 本发明涉及一种带电粒子束光刻系统，包括：带电粒子光学柱，布置在真空室中，用于将带电粒子束投射到靶上，其中该柱包括偏转装置，用于偏转带电粒子束的偏转方向， 目标定位装置，包括用于承载目标的载体，以及用于沿着第一方向承载和移动载体的载物台，其中所述第一方向不同于所述偏转方向，其中所述目标定位装置包括用于使所述载物台移动的第一致动器 相对于带电粒子光学柱的第一方向，其中所述载体可位移地布置在所述载物台上，并且其中所述目标定位装置包括用于将所述载体相对于所述载物台保持在第一相对位置的保持装置。

公开(公告)号：US20150137010A1

公开(公告)日：2015-05-21

申请号：US14541238

申请日：2014-11-14

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Willem Henk URBANUS ,  Marco Jan-Jaco WIELAND

IPC: H01J37/02 ,  H01J37/317 ,  H01J37/30 ,  H01J37/16

CPC classification number: G21K1/02 ,  G21K5/04 ,  H01J37/026 ,  H01J37/065 ,  H01J37/12 ,  H01J37/16 ,  H01J37/24 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/0216 ,  H01J2237/024 ,  H01J2237/032 ,  H01J2237/04 ,  H01J2237/1215 ,  H01J2237/16 ,  H01J2237/1825 ,  H01J2237/303 ,  H01J2237/30472

Abstract: The invention relates to an electrode stack (70) comprising stacked electrodes (71-80) for manipulating a charged particle beam along an optical axis (A). Each electrode comprises an electrode body with an aperture for the charged particle beam. The electrode bodies are mutually spaced and the electrode apertures are coaxially aligned along the optical axis. The electrode stack comprises electrically insulating spacing structures (89) between each pair of adjacent electrodes for positioning the electrodes (71-80) at predetermined mutual distances along the axial direction (Z). A first electrode and a second electrode each comprise an electrode body with one or more support portions (86), wherein each support portion is configured to accommodate at least one spacing structure (89). The electrode stack has at least one clamping member (91-91c) configured to hold the support portions (86) of the first and second electrodes, as well as the intermediate spacing structure (89) together.

Abstract translation: 本发明涉及一种电极堆叠（70），其包括用于沿光轴（A）操纵带电粒子束的堆叠电极（71-80）。 每个电极包括具有用于带电粒子束的孔的电极体。 电极体相互间隔开，并且电极孔沿光轴同轴对准。 电极堆叠包括在每对相邻电极之间的电绝缘间隔结构（89），用于将电极（71-80）沿着轴向方向（Z）定位在预定的相互距离处。 第一电极和第二电极各自包括具有一个或多个支撑部分（86）的电极主体，其中每个支撑部分构造成容纳至少一个间隔结构（89）。 电极堆叠具有至少一个构造成将第一和第二电极的支撑部分（86）以及中间间隔结构（89）保持在一起的夹紧构件（91-91c）。

公开(公告)号：US20150137009A1

公开(公告)日：2015-05-21

申请号：US14541236

申请日：2014-11-14

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Willem Henk URBANUS ,  Marco Jan-Jaco WIELAND

IPC: H01J37/30 ,  H01J37/24 ,  H01J37/317

CPC classification number: G21K1/02 ,  G21K5/04 ,  H01J37/026 ,  H01J37/065 ,  H01J37/12 ,  H01J37/16 ,  H01J37/24 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/0216 ,  H01J2237/024 ,  H01J2237/032 ,  H01J2237/04 ,  H01J2237/1215 ,  H01J2237/16 ,  H01J2237/1825 ,  H01J2237/303 ,  H01J2237/30472

Abstract: The invention relates to a collimator electrode, comprising an electrode body (81) that is provided with a central electrode aperture (82), wherein the electrode body defines an electrode height between two opposite main surfaces, and wherein the electrode body accommodates a cooling conduit (105) inside the electrode body for transferring a cooling liquid (102). The electrode body preferably has a disk shape or an oblate ring shape.The invention further relates to a collimator electrode stack for use in a charged particle beam generator, comprising a first collimator electrode and a second collimator electrode that are each provided with a cooling conduit (105) for transferring the cooling liquid (102), and a connecting conduit (110) for a liquid connection between the cooling conduits of the first and second collimator electrodes.

Abstract translation: 本发明涉及一种准直器电极，包括设置有中心电极孔（82）的电极体（81），其中电极体限定两个相对的主表面之间的电极高度，并且其中电极体容纳冷却导管 （105），用于传送冷却液（102）。 电极体优选具有盘状或扁圆形状。 本发明还涉及一种用于带电粒子束发生器的准直器电极叠层，其包括第一准直器电极和第二准直器电极，每个准直器电极和第二准直器电极都设置有用于传送冷却液体（102）的冷却导管（105） 连接导管（110）用于第一和第二准直仪电极的冷却管道之间的液体连接。

公开(公告)号：US20150069259A1

公开(公告)日：2015-03-12

申请号：US14477769

申请日：2014-09-04

Applicant: Mapper Lithography IP B.V.

Inventor： Sohail Chatoor ,  Joost Witteveen ,  Alon Rosenthal ,  Johan Joost Koning

IPC: G21K1/093 ,  G21K1/087

CPC classification number: G21K1/093 ,  G21K1/087 ,  H01F2007/068 ,  H01J37/1475 ,  H01J37/3177 ,  H01J2237/1526 ,  H01J2237/31774

Abstract: The invention relates to a charged particle optical device for manipulating a trajectory of multiple beamlets of charged particles. Said charged particle optical device comprising an electromagnetic deflector comprising a planar substrate having an upper side and a lower side of said substrate, and an even thickness. The substrate comprises: a through opening for passing said beamlets there through, wherein said through opening debouches in the upper and lower side of said substrate; a first and a second coil, wherein each of said coils preferably is a substantially helical coil and comprises conducting upper leads arranged at the upper side, conducting lower leads arranged at the lower side, and vias extending through said substrate and which conductively connect one of said upper leads with one of said lower leads for forming said coil; wherein said first and second coils are arranged on either side of the through opening.

Abstract translation: 本发明涉及一种用于操纵带电粒子的多个子束的轨迹的带电粒子光学装置。 所述带电粒子光学器件包括电磁偏转器，该电磁偏转器包括具有所述基底的上侧和下侧的平面基底和均匀的厚度。 基板包括：用于使所述子束通过的通孔，其中所述通孔在所述基板的上侧和下侧消失; 第一和第二线圈，其中每个所述线圈优选地是基本上螺旋形的线圈，并且包括导通布置在上侧的上引线，导电布置在下侧的下引线，以及延伸穿过所述基板的通孔，并且导电地连接 所述上引线与所述下导线之一形成所述线圈; 其中所述第一和第二线圈布置在所述通孔的任一侧上。

公开(公告)号：US08890094B2

公开(公告)日：2014-11-18

申请号：US14027697

申请日：2013-09-16

Applicant: Mapper Lithography IP B.V.

Inventor： Marco Jan Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent Van Veen ,  Pieter Kruit ,  Stijn Willem Herman Karel Steenbrink

IPC: H01J37/317 ,  H01J37/12 ,  H01J37/30 ,  B82Y40/00 ,  B82Y10/00

CPC classification number: H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/12 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/1205 ,  H01J2237/121 ,  H01J2237/151 ,  H01J2237/31774

Abstract: A projection lens arrangement for a charged particle multi-beamlet system, the projection lens arrangement including one or more plates and one or more arrays of projection lenses. Each plate has an array of apertures formed in it, with projection lenses formed at the locations of the apertures. The arrays of projection lenses form an array of projection lens systems, each projection lens system comprising one or more of the projection lenses formed at corresponding points of the one or more arrays of projection lenses.

Abstract translation: 一种用于带电粒子多子束系统的投影透镜装置，所述投影透镜装置包括一个或多个板和一个或多个投影透镜阵列。 每个板具有形成在其中的孔阵列，其中投影透镜形成在孔的位置处。 投影透镜的阵列形成投影透镜系统的阵列，每个投影透镜系统包括一个或多个投影透镜，其形成在一个或多个投影透镜阵列的对应点处。

公开(公告)号：US08859983B2

公开(公告)日：2014-10-14

申请号：US13935602

申请日：2013-07-05

Applicant: Mapper Lithography IP B.V.

Inventor： Marco Jan-Jaco Wieland

IPC: H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00

Abstract: The invention relates to a method of exposing a target by means of a plurality of beamlets. First, a plurality of beamlets is provided. The beamlets are arranged in an array. Furthermore, a target to be exposed is provided. Subsequently, relative movement in a first direction between the plurality of beamlets and the target is created. Finally, the plurality of beamlets is moved in a second direction, such that each beamlet exposes a plurality of scan lines on the target. The relative movement in the first direction and the movement of the plurality of beamlets in the second direction are such that the distance between adjacent scan lines exposed by the plurality of beamlets is smaller than a projection pitch Pproj,X in the first direction between beamlets of the plurality of beamlets in the array.

Abstract translation: 本发明涉及通过多个子束曝光目标的方法。 首先，提供多个子束。 子束排列成阵列。 此外，提供要暴露的目标。 随后，产生在多个子束与目标之间的第一方向的相对运动。 最后，多个子束在第二方向上移动，使得每个子束在目标上露出多条扫描线。 第一方向上的相对移动和多个子束在第二方向上的移动使得由多个子束暴露的相邻扫描线之间的距离小于第一方向上的投影间距Pproj，X在子束之间的第一方向上 阵列中的多个子束。

公开(公告)号：US20140264066A1

公开(公告)日：2014-09-18

申请号：US14287238

申请日：2014-05-27

Applicant: Mapper Lithography IP B.V.

Inventor： Teunis VAN DE PEUT ,  Marco Jan-Jaco WIELAND

IPC: H01J37/317

Abstract: A method for exposing a wafer in a charged particle lithography system. The method comprises generating a plurality of charged particle beamlets, the beamlets arranged in groups, each group comprising an array of beamlets; moving the wafer under the beamlets in a first direction at a wafer scan speed; deflecting the beamlets in a second direction substantially perpendicular to the first direction at a deflection scan speed, and adjusting the deflection scan speed to adjust a dose imparted by the beamlets on the wafer.

Abstract translation: 一种用于在带电粒子光刻系统中曝光晶片的方法。 该方法包括产生多个带电粒子子束，子束以组的形式排列，每组包括子束阵列; 以晶圆扫描速度在第一方向下移动晶片在子束之下; 在偏转扫描速度下，以基本上垂直于第一方向的第二方向偏转子束，并且调整偏转扫描速度以调整由晶片上的子束赋予的剂量。