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公开(公告)号:US09123507B2
公开(公告)日:2015-09-01
申请号:US14385802
申请日:2013-03-20
Applicant: MAPPER LITHOGRAPHY IP B.V.
Inventor: Pieter Kruit , Marc Smits
CPC classification number: H01J37/3174 , B82Y10/00 , B82Y40/00 , F15D1/025 , G03F7/70925 , G21K2201/06 , H01J9/38 , H01J37/3007 , H01J37/3177 , H01J37/32862 , H01J2237/006 , H01J2237/022 , H01J2237/327 , Y10T137/2082 , Y10T137/87571
Abstract: The invention relates to an arrangement for transporting radicals. The arrangement includes a plasma generator and a guiding body. The plasma generator includes a chamber (2) in which a plasma may be formed. The chamber has an inlet (5) for receiving an input gas, and one or more outlets (6) for removal of at least one of the plasma and radicals created therein. The guiding body is hollow and is arranged for guiding radicals formed in the plasma towards an area or volume at which contaminant deposition is to be removed. The chamber inlet is coupled to a pressure device (40) for providing a pulsed pressure into the chamber so as to create a flow in the guiding body.
Abstract translation: 本发明涉及一种输送自由基的装置。 该装置包括等离子体发生器和引导体。 等离子体发生器包括可以形成等离子体的腔室(2)。 腔室具有用于接收输入气体的入口(5)和用于去除其中产生的至少一种等离子体和自由基的一个或多个出口(6)。 引导体是中空的,并且被布置成用于将形成在等离子体中的自由基引导到要去除污染物沉积的区域或体积。 腔室入口联接到压力装置(40),用于向腔室提供脉冲压力,以便在引导体中产生流动。
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公开(公告)号:US08890094B2
公开(公告)日:2014-11-18
申请号:US14027697
申请日:2013-09-16
Applicant: Mapper Lithography IP B.V.
Inventor: Marco Jan Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent Van Veen , Pieter Kruit , Stijn Willem Herman Karel Steenbrink
IPC: H01J37/317 , H01J37/12 , H01J37/30 , B82Y40/00 , B82Y10/00
CPC classification number: H01J37/3175 , B82Y10/00 , B82Y40/00 , H01J37/12 , H01J37/3007 , H01J37/3177 , H01J2237/0435 , H01J2237/1205 , H01J2237/121 , H01J2237/151 , H01J2237/31774
Abstract: A projection lens arrangement for a charged particle multi-beamlet system, the projection lens arrangement including one or more plates and one or more arrays of projection lenses. Each plate has an array of apertures formed in it, with projection lenses formed at the locations of the apertures. The arrays of projection lenses form an array of projection lens systems, each projection lens system comprising one or more of the projection lenses formed at corresponding points of the one or more arrays of projection lenses.
Abstract translation: 一种用于带电粒子多子束系统的投影透镜装置,所述投影透镜装置包括一个或多个板和一个或多个投影透镜阵列。 每个板具有形成在其中的孔阵列,其中投影透镜形成在孔的位置处。 投影透镜的阵列形成投影透镜系统的阵列,每个投影透镜系统包括一个或多个投影透镜,其形成在一个或多个投影透镜阵列的对应点处。
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公开(公告)号:US09665013B2
公开(公告)日:2017-05-30
申请号:US14135372
申请日:2013-12-19
Applicant: Mapper Lithography IP B.V.
Inventor: Guido De Boer , Michel Pieter Dansberg , Pieter Kruit
CPC classification number: G03F7/70691 , G03F7/707 , G03F7/70783 , G03F7/70875
Abstract: The invention relates to a lithography system, for example for projecting an image or an image pattern on to a target (1) such as a wafer, said target being included in said system by means of a target table (2), clamping means being present for clamping said target on said table. Said clamping means comprises a layer of stationary liquid (3), included at such thickness between target and target table that, provided the material of the liquid (C) and of the respective contacting faces (A, B) of the target (1) and target table (2), a pressure drop (PCap) arises.
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公开(公告)号:US09484187B2
公开(公告)日:2016-11-01
申请号:US14805509
申请日:2015-07-22
Applicant: MAPPER LITHOGRAPHY IP B.V.
Inventor: Pieter Kruit , Marc Smits
IPC: H01J37/00 , H01J37/317 , H01J37/30 , G03F7/20 , H01J37/32 , B82Y10/00 , B82Y40/00 , F15D1/02 , H01J9/38
CPC classification number: H01J37/3174 , B82Y10/00 , B82Y40/00 , F15D1/025 , G03F7/70925 , G21K2201/06 , H01J9/38 , H01J37/3007 , H01J37/3177 , H01J37/32862 , H01J2237/006 , H01J2237/022 , H01J2237/327 , Y10T137/2082 , Y10T137/87571
Abstract: The invention relates to an arrangement for transporting radicals. An electron beam system is presented comprising a beamlet generator; a beamlet manipulator (204) comprising an array of apertures; a plasma generator comprising a chamber for forming a plasma, an inlet receiving input gas and outlets removing plasma or radicals created therein, the plasma generator further comprising outlets in flow connection with the plasma chamber outlets; and a hollow guiding body (309b) guiding radicals formed in the plasma towards the array of apertures for removing contaminant deposition. The hollow guiding body (309b) is removably connectable to an extended portion (307b) of the plasma generator outlet. A cover (400) can be placed over a connection between the hollow guiding body (309b) and the extended portion (307b). The extended portion (307b) of the plasma generator outlet and the hollow guiding body (309b) can be similarly formed as a slit.
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公开(公告)号:US09645511B2
公开(公告)日:2017-05-09
申请号:US14135378
申请日:2013-12-19
Applicant: Mapper Lithography IP B.V.
Inventor: Guido De Boer , Michel Pieter Dansberg , Pieter Kruit
CPC classification number: G03F7/70691 , G03F7/707 , G03F7/70783 , G03F7/70875
Abstract: The invention relates to a lithography system, for example for projecting an image or an image pattern on to a target (1) such as a wafer, said target being included in said system by means of a target table (2), clamping means being present for clamping said target on said table. Said clamping means comprises a layer or stationary liquid (3), included at such thickness between target and target table that, provided the material of the liquid (C) and of the respective contacting faces (A, B) of the target (1) and target table (2), a pressure drop (PCap) arises.
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公开(公告)号:USRE45552E1
公开(公告)日:2015-06-09
申请号:US13689665
申请日:2012-11-29
Applicant: Mapper Lithography IP B.V.
Inventor: Pieter Kruit , Remco Jager , Stijn Willem Herman Karel Steenbrink , Marco Jan-Jaco Wieland
IPC: G21K5/04 , H01J37/317
CPC classification number: H01J37/3177 , B82Y10/00 , B82Y40/00 , G03F7/70291 , G03F7/70383 , G03F7/70508 , H01J37/3026 , H01J37/3174 , H01J2237/31764 , H01J2237/31766 , H01J2237/31771 , H01L21/67282
Abstract: The present invention relates a probe forming lithography system for generating a pattern on to a target surface such as a wafer, using a black and white writing strategy, i.e. writing or not writing a grid cell, thereby dividing said pattern over a grid comprising grid cells, said pattern comprising features of a size larger than that of a grid cell, in each of which cells said probe is switched “on” or “off, wherein a probe on said target covers a significantly larger surface area than a grid cell, and wherein within a feature a position dependent distribution of black and white writings is effected within the range of the probe size as well as to a method upon which such system may be based.
Abstract translation: 本发明涉及一种探针形成光刻系统,用于使用黑白写入策略(即写入或不写入网格单元)在诸如晶片的目标表面上产生图案,从而将所述图案划分在包括网格单元的格子上 所述图案包括尺寸大于网格单元的尺寸的特征,在每个单元中,所述探针被切换为“开”或“关”,其中所述目标上的探针覆盖比网格单元大得多的表面积,以及 其中在特征内,在探针大小的范围以及这种系统可以基于的方法上实现黑白写入的位置相关分布。
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公开(公告)号:US20150028223A1
公开(公告)日:2015-01-29
申请号:US14385802
申请日:2013-03-20
Applicant: MAPPER LITHOGRAPHY IP B.V.
Inventor: Pieter Kruit , Marc Smits
IPC: H01J37/317 , F15D1/02
CPC classification number: H01J37/3174 , B82Y10/00 , B82Y40/00 , F15D1/025 , G03F7/70925 , G21K2201/06 , H01J9/38 , H01J37/3007 , H01J37/3177 , H01J37/32862 , H01J2237/006 , H01J2237/022 , H01J2237/327 , Y10T137/2082 , Y10T137/87571
Abstract: The invention relates to an arrangement for transporting radicals. The arrangement includes a plasma generator and a guiding body. The plasma generator includes a chamber (2) in which a plasma may be formed. The chamber has an inlet (5) for receiving an input gas, and one or more outlets (6) for removal of at least one of the plasma and radicals created therein. The guiding body is hollow and is arranged for guiding radicals formed in the plasma towards an area or volume at which contaminant deposition is to be removed. The chamber inlet is coupled to a pressure device (40) for providing a pulsed pressure into the chamber so as to create a flow in the guiding body.
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公开(公告)号:USRE45206E1
公开(公告)日:2014-10-28
申请号:US13738947
申请日:2013-01-10
Applicant: Mapper Lithography IP B.V.
Inventor: Pieter Kruit , Erwin Slot , Tijs Frans Teepen , Marco Jan-Jaco Wieland , Stijin Willem Herman Karel Steenbrink
IPC: H01J3/00
CPC classification number: H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/2443 , H01J2237/2446 , H01J2237/30433 , H01J2237/31757
Abstract: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.
Abstract translation: 用于测量带电粒子束系统的大量带电粒子束的特性的光刻系统,传感器和方法,特别是直接写入光刻系统,其中通过使用转换器元件将带电粒子束转换成光束,使用 与所述转换器元件成一直线的一系列光敏检测器,例如二极管,CCD或CMOS器件,用于检测所述光束,用所述光束曝光之后,从所述检测器电子地读出所得到的信号,利用所述信号确定 一个或多个光束特性的值,从而使用自动电子计算器,以及电子地调整带电粒子系统,以便校正超出所有或多个所述带电粒子束的规格范围值,每一个用于一个或多个属性, 基于所述计算的属性值。
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