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    MAGNETIC HOLDING STRUCTURES FOR PLASMA PROCESSING APPLICATIONS
    32.
    发明公开
    MAGNETIC HOLDING STRUCTURES FOR PLASMA PROCESSING APPLICATIONS 审中-公开

    公开(公告)号：US20240297059A1

    公开(公告)日：2024-09-05

    申请号：US18663897

    申请日：2024-05-14

    Applicant: Applied Materials, Inc.

    Inventor： Andrew NGUYEN ,  Sathya Swaroop GANTA ,  Kallol BERA ,  Canfeng LAI

    IPC: H01L21/677 ,  C23C16/513 ,  H01J37/32 ,  H01L21/02

    CPC classification number: H01L21/67709 ,  C23C16/513 ,  H01J37/3266 ,  H01L21/02274

    Abstract: Embodiments of the present disclosure generally relate to semiconductor processing equipment, and more specifically to apparatus, e.g., magnet holding structures, that can be used with magnets during plasma processing of a substrate. In an embodiment, a magnet holding structure for a plasma-enhanced chemical vapor deposition chamber is provided. The magnet holding structure includes a top piece having a plurality of magnet retention members and a bottom piece having a plurality of magnet retention members. The top piece has a first inside edge and a first outside edge, and the bottom piece has a second inside edge and a second outside edge. The magnet holding structure further includes a plurality of casings. Each casing of the plurality of casings is configured to at least partially encapsulate a magnet, and each casing positioned between a magnet retention member of the top piece and a magnet retention member of the bottom piece.

    SITU CLEAN FOR BEVEL AND EDGE RING
    33.
    发明公开
    SITU CLEAN FOR BEVEL AND EDGE RING 审中-公开

    公开(公告)号：US20230386823A1

    公开(公告)日：2023-11-30

    申请号：US17829288

    申请日：2022-05-31

    Applicant: Applied Materials, Inc.

    Inventor： Kaushik ALAYAVALLI ,  Andrew NGUYEN ,  Edward HAYWOOD ,  Lu LIU ,  Malav KAPADIA

    IPC: H01L21/02 ,  H01J37/32

    CPC classification number: H01L21/02087 ,  H01J37/3244 ,  H01J2237/335

    Abstract: Embodiments disclosed herein include a method for cleaning a bevel area of a substrate support disposed within a plasma processing chamber. In one example the method begins by placing a cover substrate on a substrate support disposed in an interior volume of a processing chamber. A cleaning gas is provided into the interior volume of the processing chamber. A plasma is struck in the interior volume of the processing chamber. A cleaning gas is provided through the substrate support to a bevel edge area defined between an outer diameter of the cover substrate and an edge ring disposed on the substrate support.

    ABATEMENT AND STRIP PROCESS CHAMBER IN A LOAD LOCK CONFIGURATION
    34.
    发明公开
    ABATEMENT AND STRIP PROCESS CHAMBER IN A LOAD LOCK CONFIGURATION 审中-公开

    公开(公告)号：US20230162984A1

    公开(公告)日：2023-05-25

    申请号：US18096104

    申请日：2023-01-12

    Applicant: Applied Materials, Inc.

    Inventor： Martin Jeffrey SALINAS ,  Paul B. REUTER ,  Andrew NGUYEN ,  Jared Ahmad LEE

    IPC: H01L21/306 ,  H01L21/02 ,  H01L21/67

    CPC classification number: H01L21/306 ,  H01L21/02063 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/02071

    Abstract: Examples of the present invention include a method for removing halogen-containing residues from a substrate. The method includes transferring a substrate to a substrate processing system through a first chamber volume of a load lock chamber. The load lock chamber is coupled to a transfer chamber of the substrate processing system. The substrate is etched in one or more processing chambers coupled to the transfer chamber of the substrate processing system with chemistry from a showerhead disposed over a heated substrate support assembly. The chemistry includes halogen. Halogen-containing residues are removed from the etched substrate in a second chamber volume of the load lock chamber. Cooling the etched substrate in a cooled substrate support assembly of the load lock chamber after removing the halogen-containing residue.

    IN-SITU SEMICONDUCTOR PROCESSING CHAMBER TEMPERATURE APPARATUS
    35.
    发明申请
    IN-SITU SEMICONDUCTOR PROCESSING CHAMBER TEMPERATURE APPARATUS 有权

    公开(公告)号：US20220076972A1

    公开(公告)日：2022-03-10

    申请号：US17477750

    申请日：2021-09-17

    Applicant: Applied Materials, Inc.

    Inventor： Andrew NGUYEN ,  Yogananda SARODE ,  Xue CHANG ,  Kartik RAMASWAMY

    IPC: H01L21/67 ,  H01L35/30 ,  H01J37/32

    Abstract: Methods and systems for in-situ temperature control are provided. The method includes delivering a temperature-sensing disc into a processing region of a processing chamber without breaking vacuum. The temperature-sensing disc includes one or more cameras configured to perform IR-based imaging. The method further includes measuring a temperature of at least one region of at least one chamber surface in the processing region of the processing chamber by imaging the at least one surface using the temperature-sensing disc. The method further includes comparing the measured temperature to a desired temperature to determine a temperature difference. The method further includes adjusting a temperature of the at least one chamber surface to compensate for the temperature difference.

    ABATEMENT AND STRIP PROCESS CHAMBER IN A LOAD LOCK CONFIGURATION
    36.
    发明申请
    ABATEMENT AND STRIP PROCESS CHAMBER IN A LOAD LOCK CONFIGURATION 审中-公开

    公开(公告)号：US20200051825A1

    公开(公告)日：2020-02-13

    申请号：US16657586

    申请日：2019-10-18

    Applicant: Applied Materials, Inc.

    Inventor： Martin Jeffrey SALINAS ,  Paul B. REUTER ,  Andrew NGUYEN ,  Jared Ahmad LEE

    IPC: H01L21/306 ,  H01L21/02 ,  H01L21/67

    Abstract: Examples of the present disclosure provide a load that includes a chamber body assembly. The chamber body assembly defines a first chamber volume and a second chamber volume fluidly isolated from one another. The first chamber volume and second chamber volume are selectively connectable to two environments through two sets of openings configured for substrate transferring. A third chamber volume is selectively connectable to the two environments through two sets of openings. A remote plasma source couples a processing gas source to the second chamber volume. A cooled substrate support assembly, includes a plurality of cooling channels, bounds a portion of the first chamber volume. A heated substrate support assembly can support a substrate. A gas distribution assembly, includes a showerhead, is disposed in the second chamber volume and is coupled to the remote plasma source. The showerhead can provide a processing gas to the second chamber volume.

    METHOD AND APPARATUS FOR CONTROLLING PLASMA NEAR THE EDGE OF A SUBSTRATE
    39.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING PLASMA NEAR THE EDGE OF A SUBSTRATE 有权
    用于控制基板边缘附近的等离子体的方法和装置

    公开(公告)号：US20160322242A1

    公开(公告)日：2016-11-03

    申请号：US15144736

    申请日：2016-05-02

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Andrew NGUYEN ,  Yang YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG

    IPC: H01L21/67 ,  C23C16/505 ,  H01L21/683 ,  H01J37/32

    CPC classification number: C23C16/505 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/32715 ,  H01L21/68742 ,  H01L21/68785

    Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber and having a support surface to support a substrate; an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support; and a first inductive applicator ring coupled to a lift mechanism to position the first inductive applicator ring within the internal processing volume.

    Abstract translation: 本文提供了用于处理衬底的方法和设备。 在一些实施例中，用于处理衬底的设备包括具有设置在处理室的电介质盖下方的内部处理容积的处理室; 设置在所述处理室中并具有用于支撑衬底的支撑表面的衬底支撑件; 感应线圈，设置在所述电介质盖的上方，以将RF能量感应地耦合到所述内部处理容积中以在所述衬底支撑件上方形成等离子体; 以及耦合到提升机构以将所述第一感应敷料器环定位在所述内部处理容积内的第一感应式施加器环。

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