中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

294 records (took 0.033 seconds)

    HIGH TEMPERATURE CHUCK FOR PLASMA PROCESSING SYSTEMS
    34.
    发明申请
    HIGH TEMPERATURE CHUCK FOR PLASMA PROCESSING SYSTEMS 审中-公开

    公开(公告)号：US20170309509A1

    公开(公告)日：2017-10-26

    申请号：US15642977

    申请日：2017-07-06

    Applicant: Applied Materials, Inc.

    Inventor： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

    IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065

    CPC classification number: H01L21/6833 ,  H01L21/3065 ,  H01L21/67103

    Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

    Radial waveguide systems and methods for post-match control of microwaves
    36.
    发明授权
    Radial waveguide systems and methods for post-match control of microwaves 有权
    用于微波后匹配控制的径向波导系统和方法

    公开(公告)号：US09564296B2

    公开(公告)日：2017-02-07

    申请号：US15063849

    申请日：2016-03-08

    Applicant: Applied Materials, Inc.

    Inventor： Satoru Kobayashi ,  Soonam Park ,  Dmitry Lubomirsky ,  Hideo Sugai

    IPC: H01J7/24 ,  H01J37/32 ,  H01J37/244

    CPC classification number: H01J37/32229 ,  H01J7/24 ,  H01J19/80 ,  H01J37/244 ,  H01J37/32201 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299 ,  H05B41/16

    Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.

    Abstract translation: 系统提供径向波导中微波的后匹配控制。 该系统包括径向波导和提供具有共同频率的第一和第二微波信号的信号发生器。 信号发生器响应于校正信号来调节第一和第二信号之间的相位偏移。 该系统还包括第一和第二电子设备组，每个电子组件放大第一和第二微波信号中相应的一个。 该系统将放大的第一和第二微波信号传输到径向波导中，并将放大的微波信号的阻抗与由波导呈现的阻抗相匹配。 该系统还包括设置在波导内的至少两个监控天线。 信号控制器从监控天线接收模拟信号，至少基于模拟信号确定数字校正信号，并将校正信号发送到信号发生器。

    ENHANCED ETCHING PROCESSES USING REMOTE PLASMA SOURCES
    38.
    发明申请
    ENHANCED ETCHING PROCESSES USING REMOTE PLASMA SOURCES 有权
    使用远程等离子体源的增强蚀刻工艺

    公开(公告)号：US20160284556A1

    公开(公告)日：2016-09-29

    申请号：US15173824

    申请日：2016-06-06

    Applicant: Applied Materials, Inc.

    Inventor： Nitin K. Ingle ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

    IPC: H01L21/3065 ,  H01J37/32

    Abstract: Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.

    Abstract translation: 蚀刻图案化衬底的方法可以包括使含氧前体流入与衬底处理区流体耦合的第一远程等离子体区域。 可以在第一远程等离子体区域中形成等离子体的同时将含氧前体流入该区域以产生含氧等离子体流出物。 所述方法还可以包括使含氟前体流入与基板处理区流体耦合的第二远程等离子体区域，同时在第二远程等离子体区域中形成等离子体以产生含氟等离子体流出物。 所述方法可以包括将含氧等离子体流出物和含氟等离子体流出物流入处理区域，并且使用流出物蚀刻容纳在基板处理区域中的图案化基板。

Patent Agency Ranking