公开(公告)号：US09984911B2

公开(公告)日：2018-05-29

申请号：US14962446

申请日：2015-12-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Ryan Hanson ,  Manjunatha Koppa ,  Vijay D. Parkhe ,  John C. Forster ,  Keith A. Miller

IPC: H02N13/00 ,  H01L21/683

CPC classification number: H01L21/6833 ,  H02N13/00

Abstract: An electrostatic chuck includes a puck having a support surface to support a substrate when disposed thereon and an opposing second surface, wherein one or more chucking electrodes are embedded in the puck, a body having a support surface coupled to the second surface of the puck to support the puck, a DC voltage sensing circuit disposed on support surface of the puck, and an inductor disposed in the body and proximate the support surface of the body, wherein the inductor is electrically coupled to DC voltage sensing circuit, and wherein the inductor is configured to filter high frequency current flow in order to accurately measure DC potential on the substrate.

公开(公告)号：US09666416B2

公开(公告)日：2017-05-30

申请号：US14954622

申请日：2015-11-30

Applicant: Applied Materials, Inc.

Inventor： John C. Forster ,  Anantha Subramani ,  Wei D. Wang

IPC: C23C14/24 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  C23C14/34

CPC classification number: H01J37/32477 ,  C23C14/34 ,  H01J37/32495 ,  H01L21/02043 ,  H01L21/67005

Abstract: A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing.

公开(公告)号：US20170076917A1

公开(公告)日：2017-03-16

申请号：US15260876

申请日：2016-09-09

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  John C. Forster ,  Kallol Bera ,  Somesh Khandelwal ,  Mandyam Sriram ,  Keiichi Tanaka ,  Kenji Takeshita ,  Nobuhiro Sakamoto ,  Takumi Yanagawa

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01J37/32623 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/32752

Abstract: A plasma source assembly for use with a processing chamber includes a blocker plate with at least one elongate slot through the blocker plate. The elongate slots can be have different lengths and angles relative to sides of the blocker plate.

Abstract translation: 与处理室一起使用的等离子体源组件包括具有通过阻挡板的至少一个细长槽的阻挡板。 细长槽可以相对于阻挡板的侧面具有不同的长度和角度。

公开(公告)号：US20150155143A1

公开(公告)日：2015-06-04

申请号：US14618416

申请日：2015-02-10

Applicant: Applied Materials, Inc.

Inventor： John C. Forster ,  Xianmin Tang

IPC: H01J37/34 ,  B23K31/02 ,  B23K1/00

CPC classification number: H01J37/3491 ,  B23K1/0008 ,  B23K31/02 ,  C23C14/3407 ,  H01J37/3435 ,  H01J37/3441 ,  H01J2237/332 ,  Y10T29/49826 ,  Y10T29/49947

Abstract: Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.

Abstract translation: 公开了改进的目标组件和暗区屏蔽的设计。 还公开了改善暗室间隙的溅射室和溅射室中的暗空隙的改进方法。 公开了一种目标组件，其具有基本上共面的背板，并且靶与暗空间屏蔽件垂直间隔开。

公开(公告)号：US12014906B2

公开(公告)日：2024-06-18

申请号：US17530809

申请日：2021-11-19

Applicant: Applied Materials, Inc.

Inventor： William R. Johanson ,  Keith A. Miller ,  Cheng-Hsiung Matthew Tsai ,  John C. Forster ,  Mukund Sundararajan

IPC: H01J37/32 ,  H01J37/34

CPC classification number: H01J37/32724 ,  H01J37/32082 ,  H01J37/34 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J2237/332

Abstract: Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support includes: an upper assembly having a base plate assembly coupled to a lower surface of a cooling plate, wherein the base plate assembly includes a plurality of electrical feedthroughs, and wherein the cooling plate includes a plurality of openings aligned with the plurality of electrical feedthroughs; an electrostatic chuck disposed on the upper assembly and removably coupled to the cooling plate, wherein the electrostatic chuck has a chucking electrode disposed therein that is electrically coupled to a first pair of electrical feedthroughs of the plurality of electrical feedthroughs; and an inner tube coupled to the cooling plate and configured to provide an RF delivery path to the electrostatic chuck.

公开(公告)号：US20220415636A1

公开(公告)日：2022-12-29

申请号：US17362925

申请日：2021-06-29

Applicant: Applied Materials, Inc.

Inventor： Jothilingam Ramalingam ,  Yong Cao ,  Ilya Lavitsky ,  Keith A. Miller ,  Tza-Jing Gung ,  Xianmin Tang ,  Shane Lavan ,  Randy D. Schmieding ,  John C. Forster ,  Kirankumar Neelasandra Savandaiah

IPC: H01J37/34 ,  C23C14/56 ,  C23C14/54 ,  H01J37/32

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

公开(公告)号：US11315769B2

公开(公告)日：2022-04-26

申请号：US17150702

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455 ,  H01L21/67 ,  C23C16/34 ,  C23C16/509 ,  C23C16/40 ,  C23C16/458 ,  C23C16/44

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

公开(公告)号：US20220028660A1

公开(公告)日：2022-01-27

申请号：US17498231

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  John C. Forster ,  Ran Liu ,  Kenichi Ohno ,  Ning Li ,  Mihaela A. Balseanu ,  Keiichi Tanaka ,  Li-Qun Xia

IPC: H01J37/32

Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

公开(公告)号：US20210050187A1

公开(公告)日：2021-02-18

申请号：US16976569

申请日：2019-03-01

Applicant: Applied Materials, Inc.

Inventor： Jozef Kudela ,  Tsutomu Tanaka ,  Alexander V. Garachtchenko ,  Dmitry A. Dzilno ,  Avinash Shervegar ,  Kallol Bera ,  Xiaopu Li ,  Anantha K. Subramani ,  John C. Forster

IPC: H01J37/32 ,  C23C16/455

Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

公开(公告)号：US20180130642A1

公开(公告)日：2018-05-10

申请号：US15805466

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  John C. Forster ,  Ran Liu ,  Kenichi Ohno ,  Ning Li ,  Mihaela Balseanu ,  Keiichi Tanaka ,  Li-Qun Xia

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01J37/32449 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32137 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32935

Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.