公开(公告)号：US20110127674A1

公开(公告)日：2011-06-02

申请号：US12953086

申请日：2010-11-23

Applicant: Jochen Reinmuth ,  Peter Schmollngruber ,  Hans Artmann

Inventor： Jochen Reinmuth ,  Peter Schmollngruber ,  Hans Artmann

IPC: H01L23/532

CPC classification number: H01L23/53252 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05669 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48669 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01041 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A layer structure for the electrical contacting of a semiconductor component having integrated circuit elements and integrated connecting lines for the circuit elements, which is suitable in particular for use in a chemically aggressive environment and at high temperatures, i.e., in so-called “harsh environments,” and is simple to implement. This layer structure includes at least one noble metal layer, in which at least one bonding island is formed, the noble metal layer being electrically insulated from the substrate of the semiconductor component by at least one dielectric layer, and having at least one ohmic contact between the noble metal layer and an integrated connecting line. The noble metal layer is applied directly on the ohmic contact layer.

Abstract translation: 用于具有集成电路元件的半导体部件和用于电路元件的集成连接线的电接触的层结构，其特别适合用于化学侵蚀性环境和高温下，即在所谓的“恶劣环境 ，“而且易于实现。 该层结构包括至少一个贵金属层，其中形成至少一个结合岛，所述贵金属层通过至少一个电介质层与半导体组件的衬底电绝缘，并且具有至少一个欧姆接触 贵金属层和集成连接线。 贵金属层直接施加在欧姆接触层上。

公开(公告)号：US20100140618A1

公开(公告)日：2010-06-10

申请号：US12590585

申请日：2009-11-10

Applicant: Jochen Reinmuth ,  Neil Davies ,  Simon Armbruster ,  Ando Feyh

Inventor： Jochen Reinmuth ,  Neil Davies ,  Simon Armbruster ,  Ando Feyh

IPC: H01L31/103 ,  H01L31/18

CPC classification number: G01J5/20 ,  G01J5/08 ,  G01J5/0853 ,  H01L27/14649

Abstract: A sensor includes at least one micro-patterned diode pixel that has a diode implemented in, on, or under a diaphragm, and the diaphragm in turn being implemented above a cavity. The diode is contacted via supply leads that are implemented at least in part in, on, or under the diaphragm, and the diode is implemented in a polycrystalline semiconductor layer. The diode is implemented by way of two low-doped diode regions or at least one low-doped diode region. At least parts of the supply leads are implemented by way of highly doped supply lead regions of the shared polycrystalline semiconductor layer.

Abstract translation: 传感器包括至少一个微图案化的二极管像素，其具有在隔膜内，上或下面实现的二极管，并且隔膜依次在空腔上方实现。 二极管通过至少部分地在隔膜中，上或下面实现的电源引线接触，并且二极管实现在多晶半导体层中。 二极管通过两个低掺杂二极管区域或至少一个低掺杂二极管区域实现。 供电线的至少一部分通过共享多晶半导体层的高掺杂电源引线区实现。

公开(公告)号：US09344806B2

公开(公告)日：2016-05-17

申请号：US13388014

申请日：2010-06-02

Applicant: Jochen Reinmuth

Inventor： Jochen Reinmuth

IPC: H04R25/00 ,  H04R19/00 ,  H04R31/00 ,  H04R19/04

CPC classification number: H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  Y10T29/49005

Abstract: Measures are provided for improving the acoustic properties of a component (10) having a micromechanical microphone structure realized in a layer construction (20) over a substrate (1), and for simplifying the production method. The microphone structure of such a component (10) includes a diaphragm (11) deflectable by acoustic pressure, spanning a cavity (13) that acts as a rear-side volume in the rear side of the component, and includes a stationary, acoustically permeable counter-element (12) situated over the diaphragm (11). According to the invention, the layer construction (20) has, between the diaphragm (11) and the substrate (1), an enclosing layer (3) in which there is fashioned an acoustically transparent aperture (4). The diaphragm (11) is connected to the rear-side volume (13) via this aperture in the enclosing layer (3). Under the enclosing layer (3), the rear-side volume (13) extends laterally beyond this aperture (4).

Abstract translation: 提供了用于改善在衬底（1）上的层结构（20）中实现的具有微机械麦克风结构的部件（10）的声学特性的措施，并且用于简化生产方法。 这种部件（10）的麦克风结构包括通过声压可偏转的隔膜（11），跨过构件后侧的作为后侧容积的空腔（13），并且包括静止的，声透过的 位于隔膜（11）上方的相对元件（12）。 根据本发明，层结构（20）在隔膜（11）和基板（1）之间具有封闭层（3），其中形成有声透明的孔（4）。 隔膜（11）通过封闭层（3）中的该孔连接到后侧容积（13）。 在封闭层（3）下方，后侧容积（13）横向延伸越过该孔（4）。

公开(公告)号：US09309107B2

公开(公告)日：2016-04-12

申请号：US13434486

申请日：2012-03-29

Applicant: Jochen Reinmuth ,  Andreas Scheurle ,  Christian Bierhoff

Inventor： Jochen Reinmuth ,  Andreas Scheurle ,  Christian Bierhoff

IPC: B32B7/14 ,  B81C1/00 ,  G01P15/08

CPC classification number: B81C1/00039 ,  B81B2207/07 ,  G01P15/0802 ,  Y10T428/24851

Abstract: A micromechanical system is described having a substrate; a first micromechanical functional area, which is situated above the substrate; a second micromechanical functional area, which is situated above the first micromechanical functional area and is connected via a first weblike anchoring structure to the first micromechanical functional area; a third micromechanical functional area, which is situated above the second micromechanical functional area, and which has a first subarea and a second subarea; the first subarea being connected via a second weblike anchoring structure to the second micromechanical functional area; and the second subarea being mounted floating over the substrate by the first subarea. The invention also provides a method for manufacturing such a micromechanical system.

Abstract translation: 具有基板的微机械系统被描述; 位于基板上方的第一微机械功能区域; 第二微机械功能区域，其位于第一微机械功能区域上方，并且经由第一网状锚定结构连接到第一微机械功能区域; 第三微机械功能区域，其位于第二微机械功能区域上方，并且具有第一子区域和第二子区域; 所述第一子区域经由第二网状锚定结构连接到所述第二微机械功能区域; 并且第二子区域通过第一子区域浮动在衬底上。 本发明还提供了一种用于制造这种微机械系统的方法。

公开(公告)号：US09136169B2

公开(公告)日：2015-09-15

申请号：US13195470

申请日：2011-08-01

Applicant: Jochen Reinmuth

Inventor： Jochen Reinmuth

IPC: H01K3/10 ,  H01L21/768 ,  B81B3/00 ,  G01L9/00 ,  G01L19/00 ,  H01L23/48

CPC classification number: H01L21/76898 ,  B81B3/0086 ,  B81B2201/0264 ,  B81B2207/096 ,  G01L9/0042 ,  G01L19/0076 ,  H01L21/7682 ,  H01L23/481 ,  H01L2924/0002 ,  Y10T29/49165 ,  H01L2924/00

Abstract: A method is described for producing an electrical feedthrough in a substrate, and a substrate having an electrical feedthrough. The method has the following operations of forming the electrical feedthrough so that it extends through the substrate from the front side to the back side of the substrate, forming a first closing layer on a front side of the substrate, forming an annular isolation trench in the substrate which encloses the electrical feedthrough, using an etching process starting from the back side of the substrate, the etching process terminating at the first closing layer, and closing off the annular isolation trench in the substrate by forming a second closing layer on the back side of the substrate.

Abstract translation: 描述了一种用于在基板中制造电馈通的方法，以及具有电馈通的基板。 该方法具有形成电馈通的以下操作，使得其从衬底的前侧延伸到后侧，在衬底的前侧形成第一闭合层，在衬底的前侧形成环形隔离沟槽 衬底，其包围电馈通，使用从衬底的背面开始的蚀刻工艺，蚀刻工艺终止于第一封闭层，并且通过在背面形成第二封闭层来封闭衬底中的环形隔离沟槽 的基底。

公开(公告)号：US09114978B2

公开(公告)日：2015-08-25

申请号：US13921419

申请日：2013-06-19

Applicant: Jochen Reinmuth ,  Jens Frey ,  Yvonne Bergmann

Inventor： Jochen Reinmuth ,  Jens Frey ,  Yvonne Bergmann

IPC: H01L29/84 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00

CPC classification number: B81C1/00134 ,  B81B3/0018 ,  B81B7/007 ,  B81B2207/095

Abstract: A method for manufacturing a component having an electrical through-connection includes: providing a semiconductor substrate having a front side and a back side opposite from the front side; producing, on the front side of the semiconductor substrate, an insulating trench which annularly surrounds a contact area; introducing an insulating material into the insulating trench; producing a contact hole on the front side of the semiconductor substrate by removing the semiconductor material surrounded by the insulating trench in the contact area; and depositing a metallic material in the contact hole.

Abstract translation: 一种用于制造具有电穿通连接的部件的方法包括：提供具有前侧和与前侧相对的后侧的半导体衬底; 在所述半导体衬底的前侧产生环形地围绕接触区域的绝缘沟槽; 将绝缘材料引入绝缘沟槽中; 通过去除由接触区域中的绝缘沟槽围绕的半导体材料，在半导体衬底的正面上产生接触孔; 以及在所述接触孔中沉积金属材料。

公开(公告)号：US08756996B2

公开(公告)日：2014-06-24

申请号：US13134020

申请日：2011-05-25

Applicant: Jochen Reinmuth

Inventor： Jochen Reinmuth

IPC: G01P15/125 ,  H01L21/28

CPC classification number: G01P15/125 ,  B81B3/007 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/0307 ,  G01P15/0802 ,  G01P2015/0811 ,  G01P2015/0871

Abstract: In a micromechanical system having a substrate and an electrode situated over the substrate, the electrode is connected to the substrate via a vertical spring. The vertical spring is sectionally provided in a first conductive layer and sectionally provided in a second conductive layer, the second conductive layer being situated over the first conductive layer and the first conductive layer being situated over the substrate. The electrode is provided in a third conductive layer, which is situated over the second conductive layer.

Abstract translation: 在具有衬底和位于衬底上方的电极的微机械系统中，电极通过垂直弹簧连接到衬底。 垂直弹簧被剖面地设置在第一导电层中并且分段地设置在第二导电层中，第二导电层位于第一导电层之上，第一导电层位于衬底之上。 电极设置在位于第二导电层上方的第三导电层中。

公开(公告)号：US08741774B2

公开(公告)日：2014-06-03

申请号：US13659030

申请日：2012-10-24

Applicant: Jochen Reinmuth ,  Yvonne Bergmann

Inventor： Jochen Reinmuth ,  Yvonne Bergmann

IPC: H01L21/44 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76898 ,  B81B2207/096 ,  B81C1/00301 ,  G01L9/0045 ,  G01L9/0054 ,  G01L19/0076 ,  H01L21/7682 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for producing an electrical feedthrough in a substrate includes: forming a first printed conductor on a first side of a substrate which electrically connects a first contact area of the substrate on the first side; forming a second printed conductor on a second side of a substrate which electrically connects a second contact area of the substrate on the second side; forming an annular trench in the substrate, a substrate punch being formed which extends from the first contact area to the second contact area; and selectively depositing an electrically conductive layer on an inner surface of the annular trench, the substrate punch being coated with an electrically conductive layer and remaining electrically insulated from the surrounding substrate due to the annular trench.

Abstract translation: 一种用于在基板中制造电馈通的方法包括：在基板的第一侧上形成第一印刷导体，该第一印刷导体电连接第一侧上的基板的第一接触区域; 在基板的第二侧上形成第二印刷导体，所述第二印刷导体电连接所述第二侧上的所述基板的第二接触区域; 在所述衬底中形成环形沟槽，形成从所述第一接触区域延伸到所述第二接触区域的衬底冲头; 以及在所述环形沟槽的内表面上选择性地沉积导电层，所述衬底冲头涂覆有导电层，并且由于所述环形沟槽而与所述周围衬底保持电绝缘。

公开(公告)号：US08695427B2

公开(公告)日：2014-04-15

申请号：US13116759

申请日：2011-05-26

Applicant: Jochen Reinmuth ,  Ralf Boessendoerfer ,  Axel Franke ,  Mirko Hattass

Inventor： Jochen Reinmuth ,  Ralf Boessendoerfer ,  Axel Franke ,  Mirko Hattass

IPC: G01P15/125

CPC classification number: G01B7/085 ,  B81B2201/0242 ,  B81C99/0045 ,  G01P15/125 ,  G01P2015/082 ,  G01P2015/0831

Abstract: A micromechanical component is described including a substrate having a spacer layer and a test structure for ascertaining the thickness of the spacer layer. The test structure includes a seismic mass, which is elastically deflectable along a measuring axis parallel to the substrate, a first electrode system and a second electrode system for deflecting the seismic mass along the measuring axis, having a mass electrode, which is produced by a part of the seismic mass, and a substrate electrode, which is situated on the substrate in each case, the first electrode system being designed to be thicker than the second electrode system by the layer thickness of the spacer layer.

Abstract translation: 描述了一种微机械部件，其包括具有间隔层的基板和用于确定间隔层的厚度的测试结构。 测试结构包括沿着平行于基板的测量轴线可弹性偏转的地震质量块，用于沿着测量轴偏转地震质量块的第一电极系统和第二电极系统，具有质量电极，其由 地震质量的一部分，以及基板电极，其位于每种情况下的基板上，第一电极系统被设计为比间隔层的层厚度厚于第二电极系统。

公开(公告)号：US08692339B2

公开(公告)日：2014-04-08

申请号：US12737521

申请日：2009-06-03

Applicant: Jochen Reinmuth ,  Michael Saettler ,  Stefan Weiss ,  Arnim Hoechst

Inventor： Jochen Reinmuth ,  Michael Saettler ,  Stefan Weiss ,  Arnim Hoechst

IPC: H04R17/00

CPC classification number: H04R19/005 ,  B81B2201/0257 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81C1/00047 ,  B81C1/00103 ,  H04R31/00

Abstract: In a method for manufacturing a micromechanical component, a cavity is produced in the substrate from an opening at the rear of a monocrystalline semiconductor substrate. The etching process used for this purpose and the monocrystalline semiconductor substrate used are controlled in such a way that a largely rectangular cavity is formed.

Abstract translation: 在微机械部件的制造方法中，从单晶半导体基板的背面的开口在基板中产生空腔。 用于此目的的蚀刻工艺和所使用的单晶半导体衬底以这样的方式被控制，使得形成了大致矩形的空腔。