公开(公告)号：US20190233276A1

公开(公告)日：2019-08-01

申请号：US16382750

申请日：2019-04-12

Applicant: Infineon Dresden GmbH & Co. KG

Inventor： Sebastian PREGL ,  Uwe RUDOLPH

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0051 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2201/0257 ,  B81B2201/042 ,  B81B2203/0136 ,  B81B2203/0181 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00166 ,  B81C1/00182 ,  B81C2201/013 ,  B81C2203/0136

Abstract: A method for forming a MEMS device may include performing a silicon-on-nothing process to form a cavity in a monocrystalline silicon substrate at a first depth relative to a top surface of the monocrystalline silicon substrate; forming, in an electrically conductive electrode region of the monocrystalline silicon substrate, an electrically insulated region extending to a second depth that is less than the first depth relative to the top surface of the monocrystalline silicon substrate; and etching the monocrystalline silicon substrate to expose a gap between a first electrode and a second electrode, wherein the second electrode is separated from the first electrode, within a first depth region, by a first distance defined by the electrically insulated region and the gap, and wherein the second electrode is separated from the first electrode, within a second depth region, by a second distance defined by the gap.

公开(公告)号：US09966194B2

公开(公告)日：2018-05-08

申请号：US15385431

申请日：2016-12-20

Applicant: Texas Instruments Incorporated

Inventor： Arun Gupta ,  William C. McDonald ,  Adam Fruehling ,  Ivan Kmecko ,  Lance Barron ,  Divyanshu Agrawal ,  Arthur M. Turner ,  John C. Ehmke

IPC: H01L27/20 ,  H01L29/84 ,  H01G5/16 ,  H01G5/40 ,  H01G5/011 ,  B81B7/00

CPC classification number: H01G5/16 ,  B81B3/0008 ,  B81B3/001 ,  B81B3/0013 ,  B81B7/0064 ,  B81B7/008 ,  B81B7/02 ,  B81B2201/016 ,  B81B2201/0221 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0181 ,  B81B2203/053 ,  B81B2203/058 ,  B81B2203/06 ,  B81B2207/012 ,  B81B2207/096 ,  B81C1/00158 ,  H01G5/011 ,  H01G5/40

Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

公开(公告)号：US20170271318A1

公开(公告)日：2017-09-21

申请号：US15611855

申请日：2017-06-02

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： TOSHIYUKI NAKAISO ,  NOBUO SAKAI

IPC: H01L27/02 ,  B81B7/00 ,  H01L29/93 ,  H01L27/08 ,  H01G7/06

CPC classification number: H01L27/0248 ,  B81B7/0022 ,  B81B2201/0221 ,  H01G4/33 ,  H01G7/06 ,  H01L27/0805 ,  H01L28/55 ,  H01L29/93

Abstract: A variable capacitance device that includes a semiconductor substrate, a redistribution layer disposed on a surface of the semiconductor substrate, and a plurality of terminal electrodes including first and second input/output terminals, a ground terminal and a control voltage application terminal. Moreover, a variable capacitance element section is formed in the redistribution layer from a pair of capacitor electrodes connected to the first and second input/output terminals, respectively, and a ferroelectric thin film disposed between the capacitor electrodes. Further, an ESD protection element is connected between the one of the input/output terminals and the ground terminal is formed on the surface of the semiconductor substrate.

公开(公告)号：US09725298B2

公开(公告)日：2017-08-08

申请号：US14988842

申请日：2016-01-06

Applicant: Robert Bosch GmbH

Inventor： Ando Feyh ,  Po-Jui Chen ,  Markus Ulm

IPC: H01L29/84 ,  H01L21/50 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00 ,  H01L29/772 ,  H01L21/02 ,  H01L21/58

CPC classification number: B81B3/0021 ,  B81B2201/0221 ,  B81B2201/0228 ,  B81C1/00134 ,  B81C1/00246 ,  B81C2203/0771

Abstract: A method of fabricating a semiconductor device comprises forming a dielectric layer above a substrate, the dielectric layer including a fixed dielectric portion and a proof mass portion, forming a source region and a drain region in the substrate, forming a gate electrode in the proof mass portion, and releasing the proof mass portion, such that the proof mass portion is movable with respect to the fixed dielectric portion and the gate electrode is movable with the proof mass portion relative to the source region and the drain region.

公开(公告)号：US09721858B2

公开(公告)日：2017-08-01

申请号：US14675468

申请日：2015-03-31

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal Fornara ,  Christian Rivero

IPC: H01L23/522 ,  H01L23/04 ,  H01L49/02 ,  B81B3/00 ,  H01G5/18 ,  H01L27/06

CPC classification number: H01L23/04 ,  B81B3/0021 ,  B81B2201/0221 ,  H01G5/18 ,  H01L23/5223 ,  H01L27/0629 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit includes several metallization levels separated by an insulating region. A hollow housing whose walls comprise metallic portions is produced within various metallization levels. A controllable capacitive device includes a suspended metallic structure situated in the hollow housing within a first metallization level including a first element fixed on two fixing zones of the housing and at least one second element extending in cantilever fashion from the first element and includes a first electrode of the capacitive device. A second electrode includes a first fixed body situated at a second metallization level adjacent to the first metallization level facing the first electrode. The first element is controllable in flexion from a control zone of this first element so as to modify the distance between the two electrodes.

公开(公告)号：US09711290B2

公开(公告)日：2017-07-18

申请号：US15024931

申请日：2014-09-24

Applicant: CAVENDISH KINETICS, INC.

Inventor： Mickael Renault ,  Vikram Joshi ,  Robertus Petrus Van Kampen ,  Thomas L. Maguire ,  Richard L. Knipe

IPC: H01L29/84 ,  H01G5/16 ,  H01H59/00 ,  B81B3/00 ,  B81C1/00 ,  H01G5/011

CPC classification number: H01G5/16 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2203/04 ,  B81C1/00166 ,  B81C2201/0104 ,  B81C2201/0109 ,  H01G5/011 ,  H01H59/0009

Abstract: The present invention generally relates to a MEMS device and a method of manufacture thereof. The RF electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface of the movable plate. As such, the movable plate is able to have good contact with the dielectric layer and thus, good capacitance is achieved.

公开(公告)号：US09704847B2

公开(公告)日：2017-07-11

申请号：US15239196

申请日：2016-08-17

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Toshiyuki Nakaiso ,  Nobuo Sakai

IPC: H01L27/02 ,  H01L27/08 ,  B81B7/00 ,  H01L29/93 ,  H01G7/06 ,  H01L49/02

CPC classification number: H01L27/0248 ,  B81B7/0022 ,  B81B2201/0221 ,  H01G4/33 ,  H01G7/06 ,  H01L27/0805 ,  H01L28/55 ,  H01L29/93

Abstract: A variable capacitance device that includes a semiconductor substrate, a redistribution layer disposed on a surface of the semiconductor substrate, and a plurality of terminal electrodes including first and second input/output terminals, a ground terminal and a control voltage application terminal. Moreover, a variable capacitance element section is formed in the redistribution layer from a pair of capacitor electrodes connected to the first and second input/output terminals, respectively, and a ferroelectric thin film disposed between the capacitor electrodes. Further, an ESD protection element is connected between the one of the input/output terminals and the ground terminal is formed on the surface of the semiconductor substrate.

公开(公告)号：US20170154734A1

公开(公告)日：2017-06-01

申请号：US15374719

申请日：2016-12-09

Applicant: wiSpry, Inc.

Inventor： Arthur S. Morris, III ,  Dana DeReus ,  Norito Baytan

IPC: H01G5/16 ,  B81C1/00 ,  B81B3/00

CPC classification number: H01G5/16 ,  B81B3/0008 ,  B81B3/0016 ,  B81B3/0051 ,  B81B2201/0221 ,  B81C1/00166 ,  B81C1/00476 ,  B81C2201/0109 ,  B81C2201/013 ,  H01G5/18 ,  H01G7/00

Abstract: Systems, devices, and methods for micro-electro-mechanical system (MEMS) tunable capacitors can include a fixed actuation electrode attached to a substrate, a fixed capacitive electrode attached to the substrate, and a movable component positioned above the substrate and movable with respect to the fixed actuation electrode and the fixed capacitive electrode. The movable component can include a movable actuation electrode positioned above the fixed actuation electrode and a movable capacitive electrode positioned above the fixed capacitive electrode. At least a portion of the movable capacitive electrode can be spaced apart from the fixed capacitive electrode by a first gap, and the movable actuation electrode can be spaced apart from the fixed actuation electrode by a second gap that is larger than the first gap.

公开(公告)号：US09571938B2

公开(公告)日：2017-02-14

申请号：US14558993

申请日：2014-12-03

Applicant: Robert Bosch GmbH

Inventor： Christoph Schelling ,  Rolf Scheben ,  Ricardo Ehrenpfordt

IPC: H04R23/00 ,  H04R19/00 ,  B81B3/00 ,  H04R19/04 ,  H04R29/00

CPC classification number: H04R19/005 ,  B81B3/0018 ,  B81B3/0021 ,  B81B2201/0221 ,  B81B2201/0257 ,  B81B2201/0285 ,  H04R19/04 ,  H04R29/004

Abstract: A capacitive MEMS microphone element is described which may be used optionally for detecting acoustic signals (microphone mode) or for detecting ultrasound signals in a defined frequency range (ultrasound mode). In the layered structure of the MEMS microphone element, at least two carrier elements for the two electrode sides of a capacitor system are formed one above the other and at a distance from one another for signal detection. At least one of the two carrier elements is sound pressure-sensitive and at least one of the two electrode sides includes at least two electrode segments which are electrically contactable independent of one another, which together with the at least one electrode of the other electrode side form partial capacitances which are independent of one another.

Abstract translation: 描述了可以可选地用于检测声信号（麦克风模式）或用于在限定的频率范围（超声模式）中检测超声信号的电容式MEMS麦克风元件。 在MEMS麦克风元件的分层结构中，用于电容器系统的两个电极侧的至少两个载体元件彼此之间并且彼此间隔一定距离地形成用于信号检测。 两个载体元件中的至少一个是声压敏的，并且两个电极侧中的至少一个包括彼此独立地电接触的至少两个电极段，这两个电极段与另一个电极侧的至少一个电极 形成彼此独立的部分电容。

公开(公告)号：US20160264401A1

公开(公告)日：2016-09-15

申请号：US15064879

申请日：2016-03-09

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Matti LIUKKU ,  Jaakko RUOHIO ,  Hannu VESTERINEN

IPC: B81B3/00

CPC classification number: B81B3/0045 ,  B81B3/0056 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2201/0271 ,  G01P15/125 ,  G01P2015/0814 ,  H01G5/14

Abstract: A MEMS structure that provides an improved way to selectively control electromechanical properties of a MEMS device with an applied voltage. The MEMS structure includes a capacitor element that comprises at least one stator element, and at least one rotor element suspended for motion parallel to a first direction in relation to the stator element. The stator element and the rotor element form at least one capacitor element, the capacitance of which varies according to displacement of the rotor element from an initial position. The stator element and the rotor element are mutually oriented such that in at least one range of displacements of the rotor element from an initial position, the second derivative of the capacitance with respect to the displacement has negative values.

Abstract translation: MEMS结构提供了一种改进的方法来选择性地控制具有施加电压的MEMS器件的机电性能。 MEMS结构包括电容器元件，其包括至少一个定子元件，以及至少一个与定子元件平行于第一方向运动的转子元件。 定子元件和转子元件形成至少一个电容器元件，其电容根据转子元件从初始位置的位移而变化。 定子元件和转子元件相互取向，使得在转子元件从初始位置的至少一个位移范围内，相对于位移的电容的二次导数具有负值。