公开(公告)号：US20020045287A1

公开(公告)日：2002-04-18

申请号：US09881744

申请日：2001-06-18

Applicant: RANDOX LABORATORIES LIMITED

Inventor： Harold S. Gamble ,  S.J. Neil Mitchell ,  Andrzej Prochaska ,  Stephen Peter Fitzgerald

IPC: H01L021/00

CPC classification number: B81C1/00158 ,  B41J2/16 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1632 ,  B41J2/1639 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0146

Abstract: A method of manufacturing a diaphragm utilizing a precision grinding technique after etching a cavity in a wafer. A technique for preventing distortion of the diaphragm based on use of a sacrificial layer of porous silicon is disclosed.

Abstract translation: 在蚀刻晶片中的空腔之后利用精密研磨技术制造隔膜的方法。 公开了一种基于使用多孔硅牺牲层防止隔膜变形的技术。

公开(公告)号：US5665250A

公开(公告)日：1997-09-09

申请号：US622877

申请日：1996-03-29

Applicant: Hitoshi Iwata ,  Makoto Murate

Inventor： Hitoshi Iwata ,  Makoto Murate

IPC: B81B3/00 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L21/00

CPC classification number: B81C1/00047 ,  G01P15/0802 ,  G01P15/123 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81C2201/0115 ,  G01P2015/0828 ,  Y10S438/96

Abstract: A surface type acceleration sensor includes a p-type single crystal silicon base plate, a cantilever functioning as a cantilever structure portion, and a plurality of strain gauges. The cantilever is disposed in a recess portion formed on the front face of the p-type single crystal silicon base plate so that the cantilever can be displaced in the upward and downward direction. The cantilever includes an epitaxial growth layer principally made of n-type single crystal silicon. The strain gauge is made of p-type silicon and formed on an upper face of the base end portion of the cantilever.

Abstract translation: 表面型加速度传感器包括p型单晶硅基板，用作悬臂结构部分的悬臂和多个应变计。 悬臂设置在形成在p型单晶硅基板的正面上的凹部中，使得悬臂可以在向上和向下的方向上移位。 悬臂包括主要由n型单晶硅制成的外延生长层。 应变片由p型硅制成，并形成在悬臂的基端部的上表面上。

公开(公告)号：US3962052A

公开(公告)日：1976-06-08

申请号：US567656

申请日：1975-04-14

Applicant: Shakir A. Abbas ,  Robert C. Dockerty ,  Michael R. Poponiak

Inventor： Shakir A. Abbas ,  Robert C. Dockerty ,  Michael R. Poponiak

IPC: H01L21/306 ,  H01L21/3063 ,  H01L21/308 ,  C25F3/00

CPC classification number: B81C1/00087 ,  H01L21/3063 ,  H01L21/308 ,  B81C2201/0115 ,  Y10S438/924 ,  Y10S438/96

Abstract: A process for forming holes with precisely controlled dimension and position in monocrystalline silicon wafers wherein the holes are fabricated with vertical sides. In the preferred process, both sides of the silicon body are masked, opposite registered openings made in the masking layers, an impurity introduced through the openings into the body forming low resistivity regions, the body anodically etched through the openings until a porous silicon region is formed completely through the body, and subsequently removing the resultant porous silicon region with a silicon etchant.

公开(公告)号：US09988263B2

公开(公告)日：2018-06-05

申请号：US14914215

申请日：2013-08-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Patrick Wayne Sadik ,  Roger A. McKay

IPC: H01L21/306 ,  B81C1/00 ,  B41J2/16

CPC classification number: B81C1/00063 ,  B41J2/162 ,  B41J2/1626 ,  B81B2201/052 ,  B81C2201/0115 ,  B81C2201/0133 ,  B81C2201/0181

Abstract: An example provides a method including sputtering a metal catalyst onto a substrate, exposing the substrate to a solution that reacts with the metal catalyst to form a plurality of pores in the substrate, and etching the substrate to remove the plurality of pores to form a recess in the substrate.

公开(公告)号：US09511998B2

公开(公告)日：2016-12-06

申请号：US14207752

申请日：2014-03-13

Applicant: Robert Bosch GmbH

Inventor： Ashwin Samarao ,  Gary O'Brien ,  Ando Feyh ,  Gary Yama ,  Andrew Graham ,  Bongsang Kim ,  Fabian Purkl

IPC: H01L21/322 ,  B81C1/00 ,  H01L23/28

CPC classification number: B81C1/00285 ,  B81C2201/0115 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/3223 ,  H01L21/3225 ,  H01L23/28

Abstract: A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.

Abstract translation: 微机电系统（MEMS）装置包括高密度吸气剂。 高密度吸气剂包括通过孔化形成的硅表面积或通过在该装置的密封腔内形成沟槽。 硅表面积包括钛或其它吸气材料的沉积物，以减少密封室中存在的气体的量，从而形成低压室。 高密度吸气剂用于测辐射仪和陀螺仪，但不限于这些设备。

公开(公告)号：US20160244885A1

公开(公告)日：2016-08-25

申请号：US15033015

申请日：2013-10-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Roger A. McKay ,  Patrick W. Sadik

IPC: C23F1/16

CPC classification number: B81C1/00539 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0115 ,  B81C2201/014 ,  C23C14/5873 ,  C23F1/02 ,  C23F1/16 ,  H01M4/0492 ,  H01M4/386

Abstract: Etching islands are formed on a first face of a substrate and a second face of the substrate non-parallel to the first face. The first face and the second face of the substrate are concurrently exposed to a solution that reacts with the etching islands to concurrently form porous regions extending into the first face and the second face.

Abstract translation: 在基板的第一面和不平行于第一面的基板的第二面上形成蚀刻岛。 衬底的第一面和第二面同时暴露于与蚀刻岛反应的溶液，以同时形成延伸到第一面和第二面的多孔区域。

公开(公告)号：US09272899B2

公开(公告)日：2016-03-01

申请号：US14591896

申请日：2015-01-07

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Rama Krishna Kotlanka ,  Rakesh Kumar ,  Premachandran Chirayarikathuveedu Sankarapillai ,  Huamao Lin ,  Pradeep Yelehanka

IPC: H01L23/48 ,  H01L25/065 ,  B81B7/00 ,  H01L21/50 ,  B81C1/00 ,  B81C3/00 ,  H01L23/522

CPC classification number: B81B7/0006 ,  B81C1/00269 ,  B81C3/001 ,  B81C2201/0115 ,  H01L21/50 ,  H01L23/481 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A bonded device having at least one porosified surface is disclosed. The porosification process introduces nanoporous holes into the microstructure of the bonding surfaces of the devices. The material property of a porosified material is softer as compared to a non-porosified material. For the same bonding conditions, the use of the porosified bonding surfaces enhances the bond strength of the bonded interface as compared to the non-porosified material.

公开(公告)号：US20140069185A1

公开(公告)日：2014-03-13

申请号：US13607352

申请日：2012-09-07

Applicant: Xiang Zheng Tu

Inventor： Xiang Zheng Tu

IPC: G01F1/688 ,  H01L35/34 ,  G01F1/692

CPC classification number: G01F1/692 ,  B81C1/00158 ,  B81C1/00246 ,  B81C1/00571 ,  B81C2201/0115 ,  B81C2201/0142 ,  G01F1/6845 ,  G01F1/688 ,  H01L21/3063 ,  H01L35/34

Abstract: A vacuum-cavity-insulated flow sensor and related fabrication method are described. The sensor comprises a porous silicon wall with numerous vacuum-pores which is created in a silicon substrate, a porous silicon membrane with numerous vacuum-pores which is surrounded and supported by the porous silicon wall, and a cavity with a vacuum-space which is disposed beneath the porous silicon membrane and surrounded by the porous silicon wall. The fabrication method includes porous silicon formation and silicon polishing in HF solution.

Abstract translation: 描述了真空腔绝缘流量传感器及相关的制造方法。 传感器包括具有许多真空孔的多孔硅壁，其形成于硅衬底中，多孔硅膜具有许多真空孔，该多孔硅膜被多孔硅壁包围和支撑，以及具有真空空间的空腔， 设置在多孔硅膜下方并被多孔硅壁包围。 制造方法包括HF溶液中的多孔硅形成和硅研磨。

公开(公告)号：US20140030847A1

公开(公告)日：2014-01-30

申请号：US13559626

申请日：2012-07-27

Applicant: Rama Krishna KOTLANKA ,  Rakesh KUMAR ,  Premachandran CHIRAYARIKATHUVEEDU SANKARAPILLAI ,  Huamao LIN ,  Pradeep YELEHANKA

Inventor： Rama Krishna KOTLANKA ,  Rakesh KUMAR ,  Premachandran CHIRAYARIKATHUVEEDU SANKARAPILLAI ,  Huamao LIN ,  Pradeep YELEHANKA

IPC: H01L21/762

CPC classification number: B81B7/0006 ,  B81C1/00269 ,  B81C3/001 ,  B81C2201/0115 ,  H01L21/50 ,  H01L23/481 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A bonded device having at least one porosified surface is disclosed. The porosification process introduces nanoporous holes into the microstructure of the bonding surfaces of the devices. The material property of a porosified material is softer as compared to a non-porosified material. For the same bonding conditions, the use of the porosified bonding surfaces enhances the bond strength of the bonded interface as compared to the non-porosified material.

Abstract translation: 公开了具有至少一个孔隙化表面的粘合装置。 孔化过程将纳米多孔孔引入装置的结合表面的微结构中。 与非孔隙化材料相比，孔化材料的材料性质更软。 对于相同的接合条件，与非孔隙化材料相比，使用孔隙化粘合表面增强了粘结界面的粘结强度。

公开(公告)号：US08217476B2

公开(公告)日：2012-07-10

申请号：US12817937

申请日：2010-06-17

Applicant: Karl-Heinz Kraft ,  Simon Armbruster ,  Arnim Hoechst

Inventor： Karl-Heinz Kraft ,  Simon Armbruster ,  Arnim Hoechst

IPC: H01L21/00

CPC classification number: B81C1/00158 ,  B81C2201/0115 ,  B81C2201/0191

Abstract: A method for manufacturing a micromechanical component and the micromechanical component produced thereby. This component is preferably a diaphragm or a diaphragm layer which is independently produced for the purpose of subsequent assembly with other components.

Abstract translation: 一种制造微机械部件的方法和由此制造的微机械部件。 该部件优选是隔膜或隔膜层，其独立地用于随后与其它部件组装的目的。