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    TERAHERTZ RADIATION DETECTOR, FOCAL PLANE ARRAY INCORPORATING TERAHERTZ DETECTOR, MULTISPECTRAL METAMATERIAL ABSORBER, AND COMBINED OPTICAL FILTER AND TERAHERTZ ABSORBER
    32.
    发明申请
    TERAHERTZ RADIATION DETECTOR, FOCAL PLANE ARRAY INCORPORATING TERAHERTZ DETECTOR, MULTISPECTRAL METAMATERIAL ABSORBER, AND COMBINED OPTICAL FILTER AND TERAHERTZ ABSORBER 有权
    TERAHERTZ辐射检测器，FERAL PLANE ARRAY INCORPORATING TERAHERTZ DETECTOR，MULTISPECTRAL METAMATERIAL ABSORBER，以及组合式光学滤波器和TERAHERTZ吸收器

    公开(公告)号：US20150276489A1

    公开(公告)日：2015-10-01

    申请号：US14723194

    申请日：2015-05-27

    Applicant: The University Court of the University of Glasgow

    Inventor： David Robert Sime Cumming ,  James Paul Grant ,  Iain James Hugh McCrindle

    IPC: G01J5/08 ,  G02B5/22 ,  G02B1/00 ,  G01J5/10 ,  G02B5/00

    CPC classification number: G01J5/0803 ,  G01J5/024 ,  G01J5/0853 ,  G01J5/0881 ,  G01J5/10 ,  G01J5/20 ,  G01J5/58 ,  G01J2005/0077 ,  G01J2005/202 ,  G02B1/002 ,  G02B5/008 ,  G02B5/22

    Abstract: The invention provides a detector comprising a metamaterial absorber and a micro-bolometer arranged to detect terahertz (THz) radiation. The metamaterial absorber can absorb multiple frequency bands, from the infrared and the THz regions of the electromagnetic spectrum. The detector is scalable to be suitable for use in a focal plane array.The invention also provides a hybrid of a plasmonic filter, e.g. for optical radiation, and a metamaterial absorber for terahertz (and/or infrared) radiation, to create a single material capable of absorbing narrow band terahertz radiation and filtering radiation in another part of the spectrum, e.g. optical radiation. Such material has great potential in future imaging technology where hybridisation can maximise the spectral information density of an optical system.

    Abstract translation: 本发明提供了一种检测器，其包括超材料吸收器和布置成检测太赫兹（THz）辐射的微测辐射热计。 超材料吸收器可以从电磁波谱的红外线和太赫兹区吸收多个频带。 检测器可扩展以适用于焦平面阵列。 本发明还提供等离子体激元过滤器的混合物，例如 以及用于太赫兹（和/或红外）辐射的超材料吸收器，以产生能够吸收窄带太赫兹辐射并过滤另一部分光谱的单一材料的单一材料，例如， 光学辐射。 这种材料在未来的成像技术中具有巨大的潜力，其中杂交可以最大化光学系统的光谱信息密度。

    Optical layered structure, manufacturing method, and use
    34.
    发明申请
    Optical layered structure, manufacturing method, and use 有权
    光学层状结构，制造方法和用途

    公开(公告)号：US20150241612A1

    公开(公告)日：2015-08-27

    申请号：US14426389

    申请日：2013-09-05

    Applicant: VAISALA OYJ

    Inventor： Hannu Talvitie ,  Jukka Korhonen ,  Martti Blomberg

    IPC: G02B5/22 ,  G01J5/10 ,  F21V7/10 ,  G01J5/08

    CPC classification number: G02B5/22 ,  F21V7/10 ,  G01J3/108 ,  G01J5/024 ,  G01J5/048 ,  G01J5/0809 ,  G01J5/10 ,  G01J5/20 ,  G01J2005/103 ,  H01L51/5271 ,  H01L51/529 ,  H05B3/84 ,  H05B2203/013

    Abstract: The present publication describes a heat-resistant optical layered structure, a manufacturing method for a layered structure, and the use of a layered structure as a detector, emitter, and reflecting surface. The layered structure comprises a reflecting layer, an optical structure on top of the reflecting layer, and preferably shielding layers for shielding the reflecting layer and the optical structure. According to the invention, the optical structure on top of the reflecting layer comprises at least one partially transparent layer, which is optically fitted at a distance to the reflecting layer.

    Abstract translation: 本公开描述了耐热光学层叠结构，层状结构的制造方法，以及层叠结构作为检测器，发射体和反射面的用途。 层状结构包括反射层，反射层顶部的光学结构，优选用于屏蔽反射层和光学结构的屏蔽层。 根据本发明，反射层顶部的光学结构包括至少一个部分透明的层，其在与反射层一定距离的光学上被配合。

    Method for making an imager device
    35.
    发明授权
    Method for making an imager device 有权
    制造成像仪的方法

    公开(公告)号：US09105551B2

    公开(公告)日：2015-08-11

    申请号：US14178764

    申请日：2014-02-12

    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

    Inventor： Cecilia Dupre

    IPC: H01L21/00 ,  H01L27/146 ,  G01J5/02 ,  G01J5/08 ,  G01J5/20

    CPC classification number: H01L27/14689 ,  G01J5/024 ,  G01J5/0809 ,  G01J5/0837 ,  G01J5/20

    Abstract: A method for making an imager device including the implementation of the steps of: making, through a layer of electric insulating material within which are made one or more pixels each including an antenna able to pick up an electromagnetic wave received at said pixel, of an aperture forming an access to a layer of sacrificial material provided between the layer of electric insulating material and a reflective layer able to reflect said electromagnetic wave; removing part of the layer of sacrificial material through the aperture, forming between the reflective layer and the layer of electric insulating material at least one optical cavity.

    Abstract translation: 一种制造成像器件的方法，包括以下步骤：通过一层电绝缘材料制成一个或多个像素，每个像素包括能够拾取在所述像素处接收的电磁波的天线， 孔形成访问设置在电绝缘材料层和能够反射所述电磁波的反射层之间的牺牲材料层; 通过孔去除牺牲材料层的一部分，在反射层和电绝缘材料层之间形成至少一个光腔。

    PHOTO DETECTOR
    36.
    发明申请
    PHOTO DETECTOR 有权
    照片检测器

    公开(公告)号：US20150200348A1

    公开(公告)日：2015-07-16

    申请号：US14468451

    申请日：2014-08-26

    Applicant: NATIONAL TAIWAN UNIVERSITY

    Inventor： SI-CHEN LEE ,  HUNG-HSIN CHEN ,  SHIH-YEN CHEN

    IPC: H01L37/02

    CPC classification number: H01L37/00 ,  G01J5/024 ,  G01J5/0818 ,  G01J5/0853 ,  G01J5/20

    Abstract: A photo detector is disclosed. The photo detector comprises a substrate, a flat metal layer, a dielectric layer, a patterned metal layer, and a semiconductor film. The flat metal layer is formed on the substrate. The dielectric layer is formed on the flat metal layer. The patterned metal layer is, formed on the dielectric layer. The patterned metal layer comprises a first interdigitated electrode and a second interdigitated electrode. The first interdigitated electrode is adjacent to the second interdigitated electrode. The semiconductor film is formed on the dielectric layer and covering the first interdigitated electrode and the second interdigitated electrode. When the semiconductor film receives an incident light, the flat metal layer and the patterned metal layer are operated in a localized surface plasmon mode or a waveguide mode for absorbing a certain narrow bandwidth radiation light of the incident light. Therefore, the electrical conductivity of the semiconductor film is changed and the optical energy absorbed by the photo detector is determined.

    Abstract translation: 公开了一种光电检测器。 光检测器包括基板，平坦金属层，电介质层，图案化金属层和半导体膜。 在基板上形成平坦的金属层。 介电层形成在平坦的金属层上。 图案化的金属层形成在电介质层上。 图案化的金属层包括第一交叉指状电极和第二叉指电极。 第一交叉电极与第二叉指电极相邻。 半导体膜形成在电介质层上并覆盖第一交叉电极和第二叉指电极。 当半导体膜接收到入射光时，平坦金属层和图案化金属层以局部表面等离子体激元模式或波导模式操作，以吸收入射光的某些窄带宽辐射光。 因此，改变半导体膜的导电性，并且确定由光电检测器吸收的光能。

    PYROELECTRIC DETECTOR AND METHOD FOR MANUFACTURING SAME, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT
    38.
    发明申请
    PYROELECTRIC DETECTOR AND METHOD FOR MANUFACTURING SAME, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT 有权
    微电子检测器及其制造方法，光电检测装置和电子仪器

    公开(公告)号：US20150060672A1

    公开(公告)日：2015-03-05

    申请号：US14531377

    申请日：2014-11-03

    Applicant: SEIKO EPSON CORPORATION

    Inventor： Takafumi NODA ,  Jun TAKIZAWA

    IPC: G01J5/04 ,  G01J5/34

    CPC classification number: G01J5/048 ,  G01J5/02 ,  G01J5/024 ,  G01J5/34 ,  H01L37/02

    Abstract: A pyroelectric detector includes a first electrode, a second electrode, a pyroelectric body that is disposed between the first electrode and the second electrode, and a first gas barrier layer that covers the pyroelectric body. The first electrode includes a first layer and a second layer. The second layer is disposed between the first layer and the pyroelectric body, and the first layer is a second gas barrier layer.

    Abstract translation: 热电检测器包括第一电极，第二电极，设置在第一电极和第二电极之间的热电体，以及覆盖热电体的第一阻气层。 第一电极包括第一层和第二层。 第二层设置在第一层和热电体之间，第一层是第二阻气层。

    Superlattice quantum well infrared detector
    40.
    发明授权
    Superlattice quantum well infrared detector 有权
    超晶格量子阱红外探测器

    公开(公告)号：US08803127B2

    公开(公告)日：2014-08-12

    申请号：US13825864

    申请日：2011-10-07

    Applicant: David Kryskowski

    Inventor： David Kryskowski

    IPC: H01L29/06 ,  G01R31/26 ,  H01L21/00

    CPC classification number: H01L31/035236 ,  B82Y20/00 ,  G01J5/022 ,  G01J5/023 ,  G01J5/024 ,  G01J5/20 ,  H01L31/035254 ,  H01L31/101 ,  H01L31/18

    Abstract: In at least one embodiment, an infrared (IR) sensor comprising a thermopile is provided. The thermopile comprises a substrate and an absorber. The absorber is positioned above the substrate and a gap is formed between the absorber and the substrate. The absorber receives IR from a scene and generates an electrical output indicative of a temperature of the scene. The absorber is formed of a super lattice quantum well structure such that the absorber is thermally isolated from the substrate. In another embodiment, a method for forming an infrared (IR) detector is provided. The method comprises forming a substrate and forming an absorber with a plurality of alternating first and second layers with a super lattice quantum well structure. The method further comprises positioning the absorber about the substrate such that a gap is formed to cause the absorber to be suspended about the substrate.

    Abstract translation: 在至少一个实施例中，提供了包括热电堆的红外（IR）传感器。 热电堆包括基底和吸收体。 吸收体位于衬底上方，并且在吸收体和衬底之间形成间隙。 吸收器从场景接收IR，并产生指示场景的温度的电输出。 吸收体由超晶格量子阱结构形成，使得吸收体与衬底热隔离。 在另一个实施例中，提供了用于形成红外（IR）检测器的方法。 该方法包括形成衬底并用具有超晶格量子阱结构的多个交替的第一和第二层形成吸收体。 该方法还包括将吸收体定位在基底周围，使得形成间隙以使吸收体悬浮在基底周围。

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