Abstract:
A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.
Abstract:
A microcolumn including an assembly substrate and a plurality of beam modification components. The assembly substrate includes a plurality of sockets, and the beam modification components each include a connector coupled to a corresponding one of the sockets. Assembly of the beam modification components to the assembly substrate may employ automation and/or automated calibration, including automated motion of robotic stages in a substantially automated manner.
Abstract:
A charged particle filter provides a curved through path and has both magnetic poles for applying a magnetic field normal to the plane of curvature of the path and electrodes for applying a radial electric field. The filter is used as an energy filter downstream of an accelerator in an ion implanter. The filter can be set to provide a range of energy dispersions, to operate as an achromatic bend, or to reject lower charge state ions.
Abstract:
An electromagnetic electron reflector, an ion implanter having an electromagnetic reflector and a method of implantation using the ion implanter. The electromagnetic electron reflector includes a frame; permanent magnets within the frame; a center aperture within the frame and electrically isolated by first gaps from the frame and the permanent magnets and fixed in position by dielectric feed throughs, first cup shields integrally formed on the top and bottom edges of the center aperture, the dielectric feed throughs nested within the first cup shields; second cup shields integrally formed on inside surfaces of the top and bottom of the frame, the second cup shields nested within respective first cup shields; entrance and exit apertures attached to the frame and an electrical conductor passing through at least one of the dielectric feed throughs and electrically contacting the center aperture.
Abstract:
To provide an electrostatic lens which improves an irradiation accuracy of an electron beam while satisfying the need for higher throughput. An electrostatic lens according to one embodiment of the present invention includes a substrate which includes an insulating plate in which a plurality of first through holes that allow an electron beam to pass through are formed, a plurality of electrodes that are formed on an inner wall of the plurality of first through holes, and a plurality of wirings that are formed on the insulating plate and are electrically connected to each of the electrodes, wherein the plurality of electrodes are electrically independent from each other.
Abstract:
An inductively coupled radio frequency plasma flood gun having a plasma chamber with one or more apertures, a gas source capable of supplying a gaseous substance to the plasma chamber, a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the gaseous substance in the plasma chamber to generate plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma and an exit aperture to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of an associated ion implantation system. Magnets are disposed on opposite sides of the aperture used to manipulate the electrons of the plasma.
Abstract:
According to one embodiment, a plasma etching apparatus includes an electrode to which a high-frequency voltage is applied, having an upper surface along which a processing target substrate is to be placed, and having an inclined side, and an electrode cover provided along the side of the electrode.
Abstract:
In order to provide a charged particle beam apparatus capable of irradiating a desired region in the surface of a sample with a charged particle beam from a wide range of angles, an electrode unit (204) comprising an electrode, the inclination angle of which (i.e. the angle of inclination relative to a plane orthogonal to the extension line of the center axis of the ion beam column (201a)) and the position of which (i.e. the position in the direction along the extension line of the center axis of the ion beam column (201a) and in directions orthogonal thereto) can be adjusted, is arranged within a sample chamber (203) of the charged particle beam apparatus. The charged particle beam apparatus is also configured so that a curved ion beam (201b) is irradiated onto a surface of a sample (202) by the electrode. This enables irradiation of the ion beam (201b) to a desired range within the surface of the sample (202), from a wide range of angles with respect to the sample surface.
Abstract:
A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
Abstract:
A plasma processing apparatus includes a processing chamber that plasma processes a target object therein, first and second electrodes that are provided in the processing chamber to face each other and have a processing space therebetween, and a high frequency power source that is connected to at least one of the first and second electrodes to supply high frequency power to the processing chamber. At least one of the first and second electrodes includes a base formed of a metal, a dielectric material provided at a central portion of a plasma side of the base, and a first resistor provided between the dielectric material and plasma, and formed of a metal with a predetermined pattern.