Abstract:
One embodiment of a particle circular accelerator 1 includes: a beam deflector for beam injections, bending electromagnets that causes the beam injected from the beam deflector for beam injections to circulate so as to form a circulation orbit, orbit adjusting electromagnets for injected beams that shift the position of each injected beam relative to the center of the circulation orbit of the beam, quadrupole electromagnets and sextupole electromagnets that adjust their respective quantities of magnetic excitation at the time of a beam extraction so as to extract a beam in a resonant region off a stable reason of beams and a beam deflector for beam extractions that takes out the beam extracted from the resonant region to the outside. The circular accelerator 1 injects beams from the inner side thereof and emits beams to the outer side thereof.
Abstract:
Provided is a plasma ion source mass spectrometer with an ion deflector lens having an improved removal ratio of photons and neutral particles as compared with the conventional art while an ion transmittance is maintained. The ion deflector includes an input side plate-like electrode, an output side plate-like electrode, and a tubular electrode disposed between the input side plate-like electrode and the output side plate-like electrode. The tubular electrode is of a point asymmetrical configuration. The tubular electrode is arranged so that a center axis of the tubular electrode is closer to an axis of travel of ions upstream of the input side plate-like electrode than an axis of travel of ions downstream of the output side plate-like electrode.
Abstract:
A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.
Abstract:
Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.
Abstract:
Provided is a plasma ion source mass spectrometer with an ion deflector lens having an improved removal ratio of photons and neutral particles as compared with the conventional art while an ion transmittance is maintained. The ion deflector includes an input side plate-like electrode, an output side plate-like electrode, and a tubular electrode disposed between the input side plate-like electrode and the output side plate-like electrode. The tubular electrode is of a point asymmetrical configuration. The tubular electrode is arranged so that a center axis of the tubular electrode is closer to an axis of travel of ions upstream of the input side plate-like electrode than an axis of travel of ions downstream of the output side plate-like electrode.
Abstract:
One embodiment relates to a charged-particle beam apparatus. The apparatus includes at least a source for generating the charged-particle beam, a first deflector, and a second deflector. The first deflector is configured to scan the charged-particle beam in a first dimension. The second deflector is configured to deflect the scanned beam such that the scanned beam impinges telecentrically (perpendicularly) upon a surface of a target substrate. Other embodiments are also disclosed.
Abstract:
Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.
Abstract:
A deflecting electromagnet has first and second magnetic poles that are opposed to each other via an inter-pole space through which an ion beam passes. The deflecting electromagnet further has: a pair of potential adjusting electrodes which are placed to sandwich a path of the ion beam in the same directions as the magnetic poles in the inter-pole space; and a DC potential adjusting power source which applies a positive voltage to the potential adjusting electrodes. The deflecting electromagnet further has a permanent-magnet group for, in the inter-pole space, forming a mirror magnetic field in which intensity is low in the vicinity of the middle in an ion beam passing direction, and intensities in locations which are respectively nearer to an inlet and an outlet are higher than the intensity in the vicinity of the middle.
Abstract:
A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.
Abstract:
An electron beam exposure system for exposing a pattern on a wafer using a plurality of electron beams, comprising a section for generating a plurality of electron beams, an electron lens section having a plurality of apertures for passing a plurality of electron beams and focusing the plurality of electron beams independently, and a magnetic field formation section provided at least one of the plurality of apertures and forming a magnetic field in a direction substantially perpendicular to the irradiating direction of an electron beam passing through the aperture.