ION IMPLANTATION WITH CHARGE AND DIRECTION CONTROL
    31.
    发明申请
    ION IMPLANTATION WITH CHARGE AND DIRECTION CONTROL 有权
    离子植入与充电和方向控制

    公开(公告)号:US20130140987A1

    公开(公告)日:2013-06-06

    申请号:US13308614

    申请日:2011-12-01

    Abstract: The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

    Abstract translation: 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件,其包括电子发射器,其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方,并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。

    Adjustable louvered plasma electron flood enclosure
    33.
    发明授权
    Adjustable louvered plasma electron flood enclosure 有权
    可调百叶等离子体电子防洪罩

    公开(公告)号:US08242469B2

    公开(公告)日:2012-08-14

    申请号:US12835138

    申请日:2010-07-13

    Applicant: Neil K. Colvin

    Inventor: Neil K. Colvin

    Abstract: An apparatus is provided for reducing particle contamination in an ion implantation system. The apparatus has an enclosure having an entrance, an exit, and at least one louvered side having a plurality of louvers defined therein. A beamline of the ion implantation system passes through the entrance and exit, wherein the plurality of louvers of the at least one louvered side are configured to mechanically filter an edge of an ion beam traveling along the beamline. The enclosure can have two louvered sides and a louvered top, wherein respective widths of the entrance and exit of the enclosure, when measured perpendicular to the beamline, are generally defined by a position of the two louvered sides with respect to one another. One or more of the louvered sides can be adjustably mounted, wherein the width of one or more of the entrance and exit of the enclosure is controllable.

    Abstract translation: 提供了用于减少离子注入系统中的颗粒污染的装置。 该装置具有外壳,其具有入口,出口和至少一个百叶窗,其中限定有多个百叶窗。 离子注入系统的束线通过入口和出口,其中至少一个百叶窗侧的多个百叶窗被配置为机械地过滤沿着束线行进的离子束的边缘。 外壳可以具有两个百叶窗和百叶窗顶部,其中当垂直于束线测量时,外壳的入口和出口的相应宽度通常由两个百叶窗相对于彼此的位置来限定。 一个或多个百叶窗侧面可以可调节地安装,其中外壳的入口和出口中的一个或多个的宽度是可控的。

    Fastening apparatus
    34.
    发明授权
    Fastening apparatus 有权
    紧固装置

    公开(公告)号:US08128330B2

    公开(公告)日:2012-03-06

    申请号:US12184486

    申请日:2008-08-01

    Abstract: One embodiment of this fastening apparatus comprises a body with a passage through its length, a threaded member, a locking member, and a bowed ring. The threaded member is retained by the locking member in the passage. The bowed ring is disposed on the body and is configured to be flexible. This body may be fabricated of graphite in one instance.

    Abstract translation: 该紧固装置的一个实施例包括具有通过其长度的通道的主体,螺纹构件,锁定构件和弓形环。 螺纹构件由通道中的锁定构件保持。 弓形环设置在主体上并且被配置为具有柔性。 在一种情况下,该体可以由石墨制成。

    Ion implantation ion source, system and method
    35.
    发明授权
    Ion implantation ion source, system and method 失效
    离子注入离子源,系统和方法

    公开(公告)号:US07732787B2

    公开(公告)日:2010-06-08

    申请号:US11647924

    申请日:2006-12-29

    Abstract: An ion source is disclosed that is capable of providing ions of decaborane in commercial ion current levels to the ion extraction system of an ion implanter is provided, the ion source comprising an ionization chamber defined by walls enclosing an ionization volume, there being an ion extraction aperture in a side wall of the ionization chamber, arranged to enable the ion current to be extracted from the ionization volume by an extraction system, an electron gun mounted on a support that is outside of and thermally isolated from the walls of the ionization chamber, the ion extraction aperture plate is biased to a negative voltage with respect to the ionization chamber to further increase the drift velocity of the ions, and hence the maximum obtainable current in the resulting ion beam.

    Abstract translation: 公开了一种离子源,其能够提供离子注入机的离子提取系统的商业离子电流水平的十硼烷离子,离子源包括由包围电离体积的壁限定的电离室,存在离子提取 电离室的侧壁中的孔径,被布置成能够通过提取系统从离子化体积中提取离子电流,电子枪安装在电离室的外部并与电离室的壁隔离的支撑体上, 离子提取孔板相对于电离室被偏置为负电压,以进一步增加离子的漂移速度,并因此进一步增加所得离子束中的最大可获得电流。

    Sensor for ion implanter
    36.
    发明授权
    Sensor for ion implanter 有权
    离子注入机传感器

    公开(公告)号:US07683348B2

    公开(公告)日:2010-03-23

    申请号:US11548295

    申请日:2006-10-11

    Abstract: A Faraday cup structure for use with a processing tool. The cup structure has a conductive strike plate coupled to a circuit for monitoring ions striking the strike plate to obtain an indication of the ion beam current. The electrically conductive strike plate is fronted by a mask for dividing an ion beam intercepting cross section into regions or segments. The mask including walls extending to the strike plate for impeding ions reaching the sensor and particles dislodged from the sensor from entering into the evacuated region of the processing tool.

    Abstract translation: 法拉第杯结构,用于加工工具。 杯结构具有连接到电路的导电冲击板,用于监测撞击撞击板的离子以获得离子束电流的指示。 导电冲击板由用于将离子束截断截面分成区域或区段的掩模前面。 掩模包括延伸到冲击板的壁,用于阻止到达传感器的离子和从传感器移出的颗粒进入加工工具的抽空区域。

    FASTENING APPARATUS
    37.
    发明申请
    FASTENING APPARATUS 有权
    紧固装置

    公开(公告)号:US20100025596A1

    公开(公告)日:2010-02-04

    申请号:US12184486

    申请日:2008-08-01

    Abstract: One embodiment of this fastening apparatus comprises a body with a passage through its length, a threaded member, a locking member, and a bowed ring. The threaded member is retained by the locking member in the passage. The bowed ring is disposed on the body and is configured to be flexible. This body may be fabricated of graphite in one instance.

    Abstract translation: 该紧固装置的一个实施例包括具有通过其长度的通道的主体,螺纹构件,锁定构件和弓形环。 螺纹构件由通道中的锁定构件保持。 弓形环设置在主体上并且被配置为具有柔性。 在一种情况下,该体可以由石墨制成。

    ACCELERATOR PARTICLE BEAM APPARATUS AND METHOD FOR LOW CONTAMINATE PROCESSING
    38.
    发明申请
    ACCELERATOR PARTICLE BEAM APPARATUS AND METHOD FOR LOW CONTAMINATE PROCESSING 审中-公开
    加速器颗粒光束装置和低污染处理方法

    公开(公告)号:US20090206275A1

    公开(公告)日:2009-08-20

    申请号:US12244687

    申请日:2008-10-02

    Abstract: A system of introducing a particle beam such as a linear accelerator particle beam for low contaminate processing. The system includes an accelerator apparatus configured to generate a first particle beam including at least a first ionic specie in an energy level of 1 MeV to 5 MeV or greater. Additionally, the system includes a beam filter coupled to the linear accelerator apparatus to receive the first particle beam. The beam filter is in a first chamber and configured to generate a second particle beam with substantially the first ionic specie only. The first chamber is associated with a first pressure. The system further includes an end-station including a second chamber coupled to the first chamber for extracting the second particle beam. The second particle beam is irradiated onto a planar surface of a bulk workpiece loaded in the second chamber for implanting the first ionic specie. The second chamber is associated with a second pressure that is higher than the first pressure. Optional beam scanning can also be added between the beam filter and the end-station.

    Abstract translation: 引入粒子束的系统,例如用于低污染处理的线性加速器粒子束。 该系统包括加速器装置,该加速器装置被配置为产生第一粒子束,该粒子束包括至少第一离子物质,其能级为1MeV至5MeV或更大。 另外,该系统包括耦合到线性加速器装置以接收第一粒子束的束过滤器。 束过滤器位于第一室中,并且被配置为仅产生基本上为第一离子物质的第二粒子束。 第一室与第一压力相关。 该系统还包括终端站,其包括耦合到第一室的第二室,用于提取第二粒子束。 将第二粒子束照射到装载在第二室中的体积工件的平坦表面上,用于植入第一离子物质。 第二室与第二压力相关联,第二压力高于第一压力。 也可以在波束过滤器和终端站之间添加可选的波束扫描。

    Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases
    39.
    发明授权
    Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases 有权
    通过引入气体减少离子注入过程中的污染和改变表面特性的系统和方法

    公开(公告)号:US07511287B2

    公开(公告)日:2009-03-31

    申请号:US11273039

    申请日:2005-11-14

    Abstract: A contamination mitigation or surface modification system for ion implantation processes includes a gas source, a controller, a valve, and a process chamber. The gas source provides delivery of a gas, be it atmospheric or reactive, to the valve and is controlled by the controller. The valve is located on or about the process chamber and controllably adjusts flow rate and/or composition of the gas to the process chamber. The process chamber holds a target device, such as a target wafer and permits interaction of the gas with an ion beam to mitigate contamination of the target wafer and/or to modify the existing properties of the processing environment or target device to change a physical or chemical state or characteristic thereof. The controller selects and adjusts composition of the gas and flow rate according to contaminants present within the ion beam, or lack thereof, as well total or partial pressure analysis.

    Abstract translation: 用于离子注入工艺的污染减轻或表面改性系统包括气源,控制器,阀和处理室。 气体源提供气体(无论是大气还是反应性)到阀门的输送,并由控制器控制。 阀位于处理室上或周围,并可控制地调节气体和/或组成气体到处理室。 处理室保持诸如目标晶片的目标装置,并且允许气体与离子束的相互作用以减轻目标晶片的污染和/或修改处理环境或目标装置的现有属性以改变物理或 化学状态或其特性。 控制器根据存在于离子束内的污染物或其缺乏以及全部或分压分析来选择和调整气体和流速的组成。

    Ion beam contamination determination
    40.
    发明授权
    Ion beam contamination determination 有权
    离子束污染测定

    公开(公告)号:US07402820B2

    公开(公告)日:2008-07-22

    申请号:US11289885

    申请日:2005-11-30

    CPC classification number: H01J37/3171 H01J37/304 H01J2237/31705 H01L22/12

    Abstract: A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.

    Abstract translation: 公开了一种用于确定离子束污染的系统,方法和程序产品。 在难以检测的等离子体干扰或离子束的预期离子之间的等压干扰或接近等压干扰的情况下,可以测量离子束中的第三离子并基于量 测量的第三离子,与预期离子相比的污染物离子的相对量。 污染物离子的估计相对量与离子注入系统的测量质量分辨率一起使用以确定离子注入过程是否需要暂停。

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