公开(公告)号：US20190206660A1

公开(公告)日：2019-07-04

申请号：US15860529

申请日：2018-01-02

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Sung Je Kim

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01J37/32715 ,  H01J2237/3341 ,  H01L21/67069

Abstract: A method for conditioning a semiconductor chamber component may include passivating the chamber component with an oxidizer. The method may also include performing a number of chamber process operation cycles in a semiconductor processing chamber housing the chamber component until the process is stabilized. The number of chamber operation cycles to stabilize the process may be less than 10% of the amount otherwise used with conventional techniques.

公开(公告)号：US20190198296A1

公开(公告)日：2019-06-27

申请号：US16104496

申请日：2018-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： SIQING LU ,  YEONGKWANG LEE ,  KEESOO PARK ,  SEUNGJAE LEE ,  JINHYUK CHOI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/3222 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32238 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32834 ,  H01J2237/3341 ,  H01L21/67011

Abstract: Disclosed are plasma processing apparatuses and methods of manufacturing semiconductor devices. The plasma processing apparatus includes a chamber including lower and upper housings, a window in the upper housing, an antenna for generating plasma of a first gas, wherein the antenna is disposed on the window and in the upper housing, a first pump for exhausting the first gas between the window and the lower housing, wherein the first pump is associated with the lower housing, a power supply for providing a power output, wherein the power supply is connected to the antenna through a first cavity of the upper housing, and a second pump for pumping a second gas between the window and in the upper housing so as to hold the antenna and the window onto an inside wall of the upper housing.

公开(公告)号：US20190148248A1

公开(公告)日：2019-05-16

申请号：US16095930

申请日：2017-04-25

Applicant: ACTIVE LAYER PARAMETRICS, INC.

Inventor： Bulent M. BASOL ,  Abhijeet JOSHI ,  Jalal ASHJAEE

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  G01R31/26 ,  G01R31/28

CPC classification number: H01L22/26 ,  G01R31/2648 ,  G01R31/2831 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32963 ,  H01J2237/24564 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20

Abstract: Methods, tools and systems for full characterization of thin and ultra-thin layers employed in advanced semiconductor device structures are disclosed.

公开(公告)号：US20190122902A1

公开(公告)日：2019-04-25

申请号：US15792252

申请日：2017-10-24

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Tom Choi ,  Junghoon Kim ,  Sean Kang ,  Mang-Mang Ling

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32899 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/68742

Abstract: Processing methods may be performed to remove unwanted materials from a substrate. The methods may include forming a remote plasma of an inert precursor in a remote plasma region of a processing chamber. The methods may include forming a bias plasma of the inert precursor within a processing region of the processing chamber. The methods may include modifying a surface of an exposed material on a semiconductor substrate within the processing region of the processing chamber with plasma effluents of the inert precursor. The methods may include extinguishing the bias plasma while maintaining the remote plasma. The methods may include adding an etchant precursor to the remote plasma region to produce etchant plasma effluents. The methods may include flowing the etchant plasma effluents to the processing region of the processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.

公开(公告)号：US20180204729A1

公开(公告)日：2018-07-19

申请号：US15748574

申请日：2016-07-28

Applicant: ULVAC, INC.

Inventor： Kazuhiro SONODA ,  Yutaka KOKAZE ,  Ryosuke FUKAYA ,  Katsuaki NAKANO

IPC: H01L21/3065 ,  H01L21/304 ,  H01L21/768 ,  H01L21/687

CPC classification number: H01L21/3065 ,  H01J2237/3341 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/304 ,  H01L21/31116 ,  H01L21/68714 ,  H01L21/768 ,  H01L21/76814

Abstract: A substrate processing device including an accommodation unit that accommodates a substrate. A gas supply unit supplies plasma generation gas. A plasma supply unit generates plasma from the plasma generation gas supplied by the gas supply unit and supplies the plasma to the accommodation unit. The plasma generation gas is a gas mixture of hydrogen gas and an additive gas or a gas combining the gas mixture and a rare gas. The additive gas includes at least either one of nitrogen atoms and oxygen atoms. The gas supply unit is configured to supply the plasma supply unit with the plasma generation gas so that a flow ratio that is a ratio of a flow of the additive gas relative to a flow of the hydrogen gas is 1/500 or greater.

公开(公告)号：US20180085752A1

公开(公告)日：2018-03-29

申请号：US15700731

申请日：2017-09-11

Applicant: Illumina, Inc.

Inventor： Hui Han ,  Dajun A. Yuan ,  M. Shane Bowen

IPC: B01L3/00 ,  B29C65/16 ,  B29C65/14 ,  H01J37/32 ,  B32B17/06

CPC classification number: B01L3/502707 ,  B01L2200/12 ,  B01L2300/0816 ,  B01L2300/0877 ,  B01L2300/0887 ,  B01L2300/0896 ,  B29C65/1406 ,  B29C65/1612 ,  B32B17/064 ,  B81C1/0038 ,  B81C2201/0153 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/30 ,  H01J37/32009 ,  H01J2237/3341

Abstract: Imprinted substrates are often used to produce miniaturized devices for use in electrical, optic and biochemical applications. Imprinting techniques, such as nanoimprinting lithography, may leave residues in the surface of substrates that affect bonding and decrease the quality of the produced devices. An imprinted substrate with residue-free region, or regions with a reduced amount of residue for improved bonding quality is introduced. Methods to produce imprinted substrates without residues from the imprinting process are also introduced. Methods include physical exclusion methods, selective etching methods and energy application methods. These methods may produce residue-free regions in the surface of the substrate that can be used to produce higher strength bonding.

公开(公告)号：US20180012759A1

公开(公告)日：2018-01-11

申请号：US15713377

申请日：2017-09-22

Applicant: Lam Research Corporation

Inventor： David Charles Smith ,  Richard Wise ,  Arpan Mahorowala ,  Patrick A. Van Cleemput ,  Bart J. van Schravendijk

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/027 ,  H01J37/32 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/0332 ,  C23C16/407 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/32862 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/3342 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/67069

Abstract: Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, thin tin oxide film is conformally deposited onto a semiconductor substrate having an exposed layer of a first material (e.g., silicon oxide or silicon nitride) and a plurality of protruding features comprising a second material (e.g., silicon or carbon). For example, 10-100 nm thick tin oxide layer can be deposited using atomic layer deposition. Next, tin oxide film is removed from horizontal surfaces, without being completely removed from the sidewalls of the protruding features. Next, the material of protruding features is etched away, leaving tin oxide spacers on the substrate. This is followed by etching the unprotected portions of the first material, without removal of the spacers. Next, underlying layer is etched, and spacers are removed. Tin-containing particles can be removed from processing chambers by converting them to volatile tin hydride.

公开(公告)号：US20180005805A1

公开(公告)日：2018-01-04

申请号：US15416422

申请日：2017-01-26

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Jason Marion ,  Alok Ranjan

IPC: H01J37/32 ,  G01N21/88 ,  G01N21/73 ,  H01L21/66 ,  H01L21/3065

CPC classification number: H01J37/32935 ,  G01N21/73 ,  G01N21/88 ,  H01J37/32128 ,  H01J37/32715 ,  H01J37/3299 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L22/26 ,  Y02P70/605

Abstract: Provided are methods and systems for operation instability detection in a surface wave plasma source. In an embodiment a system for plasma processing may include a surface wave plasma source configured to generate a plasma field. The system may also include an optical sensor configured to generate information characteristic of optical energy collected in a region proximate to the surface wave plasma source. Additionally, the system may include a sensor logic unit configured to detect a region of instability proximate to the surface wave plasma source in response to the information generated by the optical sensor.

公开(公告)号：US20170345666A1

公开(公告)日：2017-11-30

申请号：US15605531

申请日：2017-05-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinya MORIKITA ,  Ryosuke NIITSUMA ,  Weichien CHEN

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01L21/308 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32559 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/3341 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

Abstract: Disclosed is a plasma processing method for processing a workpiece that includes: a silicon-containing etching target layer, an organic film provided on the etching target layer, an antireflective film provided on the organic layer, and a first mask provided on the antireflective layer, using a plasma processing apparatus having a processing container. The plasma processing method includes: etching the antireflective film using plasma generated in the processing container and the first mask to form a second mask from the antireflective film; etching the organic film using plasma generated in the processing container and the second mask to form a third mask from the organic film; generating plasma of a mixed gas including the first gas and the second gas in the processing container; and etching the etching target layer using plasma generated in the processing container and the third mask.

公开(公告)号：US09761458B2

公开(公告)日：2017-09-12

申请号：US13581093

申请日：2011-02-25

Applicant: Freddy Roozeboom ,  Adriaan Marinus Lankhorst ,  Paulus Willibrordus George Poodt ,  Norbertus Benedictus Koster ,  Gerardus Johan Jozef Winands ,  Adrianus Johannes Petrus Maria Vermeer

Inventor： Freddy Roozeboom ,  Adriaan Marinus Lankhorst ,  Paulus Willibrordus George Poodt ,  Norbertus Benedictus Koster ,  Gerardus Johan Jozef Winands ,  Adrianus Johannes Petrus Maria Vermeer

IPC: C23C14/00 ,  H01L21/3065 ,  C23C16/02 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3065 ,  C23C16/0245 ,  C23C16/45525 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32706 ,  H01J2237/3341 ,  H01L21/30655 ,  H01L21/67028

Abstract: The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones.