公开(公告)号：US20170362698A1

公开(公告)日：2017-12-21

申请号：US15532347

申请日：2015-11-26

Applicant: Sharp Kabushiki Kaisha

Inventor： Yuhki KOBAYASHI ,  Shinichi KAWATO ,  Manabu NIBOSHI ,  Kazuo TAKIZAWA

IPC: C23C16/04 ,  C23C16/44

CPC classification number: C23C16/04 ,  C23C14/042 ,  C23C16/44 ,  H01J37/00 ,  H01L51/0011

Abstract: A vapor deposition mask (10) has a fine-irregularities structure (14), provided on a contact surface of the vapor deposition mask (10), which is configured to attract, by van der Waals force, a film formation target substrate (30) so as to surround a plurality of apertures (12). The contact surface makes contact with the film formation target substrate (30).

公开(公告)号：US20170356085A1

公开(公告)日：2017-12-14

申请号：US15177183

申请日：2016-06-08

Applicant: Applied Materials, Inc.

Inventor： Travis Morey

IPC: C23C16/44

CPC classification number: C23C16/4408 ,  C23C14/566 ,  H01J37/00

Abstract: Porous diffuser assemblies including multiple diffuser elements. The porous diffuser assemblies include a diffuser body, a diffuser base coupled to the diffuser body and forming a plenum there between, the diffuser base including a plurality of openings formed therein, and a porous diffuser element disposed in each of the plurality of openings wherein surfaces of the porous diffuser elements are exposed to the plenum. Gas purged chambers and methods of purging a chamber are disclosed, as are numerous other aspects.

公开(公告)号：US20170270656A1

公开(公告)日：2017-09-21

申请号：US15425547

申请日：2017-02-06

Applicant: NuFlare Technology, Inc.

Inventor： Ryosuke UEBA

IPC: G06T7/00 ,  G03F7/40 ,  G06K9/62

CPC classification number: G06T7/0004 ,  G03F7/40 ,  G06K9/6202 ,  G06K2209/19 ,  G06T7/001 ,  G06T2207/30148 ,  H01J37/00

Abstract: In one embodiment, a method for inspecting a blanking plate includes generating a plurality of beams by causing a charged particle beam to pass through a shaping aperture array having a plurality of holes, performing blanking deflection on the plurality of beams by using a plurality of blankers provided in a blanking plate, each of the plurality of blankers corresponding to one of the plurality of beams, writing a first inspection pattern on a substrate by using a first writing mode in which beams that have not been deflected by the plurality of blankers are radiated onto the substrate, writing a second inspection pattern on the substrate by using a second writing mode in which beams that have been deflected by the plurality of blankers are radiated onto the substrate, obtaining a pattern image of the first inspection pattern and a pattern image of the second inspection pattern, the first and second inspection patterns having been formed on the substrate, and determining a defect by comparing the obtained pattern images.

公开(公告)号：US20170259501A1

公开(公告)日：2017-09-14

申请号：US15454920

申请日：2017-03-09

Applicant: Universities Space Research Association

Inventor： Ramprasad Gandhiraman ,  Meyya Meyyappan ,  Jessica E. Koehne

IPC: B29C67/00 ,  B33Y50/02 ,  C23C4/134 ,  B33Y30/00

CPC classification number: B33Y50/02 ,  B22F3/008 ,  B22F3/1055 ,  B22F2003/1056 ,  B22F2202/13 ,  B22F2999/00 ,  B29C64/106 ,  B29C64/188 ,  B33Y30/00 ,  H01J37/00 ,  B22F3/16

Abstract: A device and method for printing 3D articles including electronic and functional elements including 3D printer and a plasma jet printer based on a dielectric barrier atmospheric pressure plasma jet system in which both printing and in-situ treatment and post-deposition treatment can be carried out to tailor the materials characteristics. Plasma jet printer comprising of electrodes in the nozzle/print head for applying electric field and generating atmospheric plasma that could be used for non- gravity based highly directional printing in any direction. Integration of dielectric barrier plasma printer and plasma treatment jets with the 3D printer increases the capability of embedding high performance electronics in a 3D printed structure aiding in additive manufacturing of functional devices. Ability to use a range of materials for print head assembly including micro machined silicon increases the resolution of the plasma jet printer to sub-micron level.

公开(公告)号：US09735025B2

公开(公告)日：2017-08-15

申请号：US15166465

申请日：2016-05-27

Applicant: Tokyo Electron Limited

Inventor： Masayuki Sawataishi ,  Tomonori Miwa ,  Yuki Kaneko

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01J37/00

CPC classification number: H01L21/31116 ,  H01J37/00 ,  H01J2237/334

Abstract: A method of etching a first region including a multilayered film, in which first dielectric films and second dielectric films serving as silicon nitride films are alternately stacked, and a second region including a single-layered silicon oxide film is provided. The etching method includes a first plasma process of generating plasma of a first processing gas containing a fluorocarbon gas and an oxygen gas within a processing vessel of a plasma processing apparatus; and a second plasma process of generating plasma of a second processing gas containing a hydrogen gas, nitrogen trifluoride gas and a carbon-containing gas within the processing vessel. A temperature of an electrostatic chuck is set to a first temperature in the first plasma process, and the temperature of the electrostatic chuck is set to a second temperature lower than the first temperature in the second plasma process.

公开(公告)号：US09564286B2

公开(公告)日：2017-02-07

申请号：US14459644

申请日：2014-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sam Hyung Sam Kim ,  Andrei Teodor Iancu ,  Friedrich B. Prinz ,  Michael C. Langston ,  Peter Schindler ,  Ki-Hyun Kim ,  Stephen P. Walch ,  Takane Usui

IPC: B05D3/06 ,  H01J37/00 ,  H01J37/32 ,  C23C16/455 ,  H01L21/768

CPC classification number: H01J37/00 ,  C23C16/45536 ,  H01J37/321 ,  H01J37/32183 ,  H01J37/32339 ,  H01J37/32357 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/76224 ,  H01L21/76831 ,  H01L21/76898

Abstract: Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a precursor gas into a chamber, discharging the precursor gas remaining in the chamber to an outside of the chamber by supplying a purge gas into the chamber, supplying a reactant gas into the chamber, generating plasma based on the reactant gas, forming a thin film by a chemical reaction between plasma and the precursor layer and radiating extreme ultraviolet (EUV) light into the chamber, and discharging the reactant gas and the plasma remaining in the chamber by supplying a purge gas into the chamber.

Abstract translation: 提供了形成半导体器件的薄膜的方法。 该方法包括通过将前体气体供应到室中在基板的表面上形成前体层，通过向室内供给吹扫气体将残留在室中的前体气体排出到室中，将反应气体供应到 该腔室基于反应气体产生等离子体，通过等离子体和前体层之间的化学反应形成薄膜，并将极紫外（EUV）光放射到室中，并通过以下步骤排出反应气体和留在腔室中的等离子体 将净化气体供应到室中。

公开(公告)号：US20160374261A1

公开(公告)日：2016-12-29

申请号：US15101752

申请日：2014-11-12

Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

Inventor： Frank-Holm RÖGNER ,  André WEIDAUER ,  Gösta MATTAUSCH ,  Jörg KUBUSCH

IPC: A01C1/08 ,  H01J37/06 ,  A61L2/08 ,  A61L2/26 ,  B01J19/08 ,  B01J8/12

CPC classification number: A01C1/08 ,  A61L2/087 ,  A61L2/26 ,  A61L2202/11 ,  B01J8/12 ,  B01J19/085 ,  B01J2219/0815 ,  B01J2219/0833 ,  B01J2219/0879 ,  H01J37/00 ,  H01J37/06 ,  H01J37/3178 ,  H01J2237/06375 ,  H01J2237/15

Abstract: An apparatus includes at least one electron beam generator for generating accelerated electrons with which bulk material particles are impingeable during free fall. The electron beam generator has an annular design in which the electrons are emitted and accelerated by an annular cathode. The electrons exit from an electron outlet window in the direction of the ring axis. The annular electron beam generator is arranged in such a way that the ring axis of the electron beam generator is oriented perpendicular to, or at an angle of up to 45° from the horizontal. The apparatus may further include a device for separating bulk material particles arranged above the annular electron beam generator, the bottom wall of said device having at least one opening out of which the bulk material particles fall and, from there, fall through the ring which is formed by the electron beam generator.

Abstract translation: 一种装置包括至少一个用于产生加速电子的电子束发生器，在自由落体期间，散装材料颗粒可以被冲击。 电子束发生器具有环形设计，其中电子被环形阴极发射和加速。 电子从电子出口窗口沿环轴方向离开。 环形电子束发生器被布置成使得电子束发生器的环轴垂直于或与水平方向成45度的角度定向。 该装置还可以包括用于分离布置在环形电子束发生器上方的散装材料颗粒的装置，所述装置的底壁具有至少一个开口，其中大块材料颗粒从该开口突出，并且从那里落下， 由电子束发生器形成。

公开(公告)号：US20160307757A1

公开(公告)日：2016-10-20

申请号：US14688191

申请日：2015-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Weibo YU ,  Jui-Ping CHUANG ,  Chen-Hsiang LU ,  Shao-Yen Ku

IPC: H01L21/263 ,  H05F3/06 ,  H05F3/04 ,  H01L21/66

CPC classification number: H01L21/263 ,  H01J37/00 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/67733 ,  H01L21/67736 ,  H01L22/14 ,  H01L22/20 ,  H05F3/04 ,  H05F3/06

Abstract: A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.

Abstract translation: 提供了一种用于处理半导体晶片的方法。 该方法包括在封装的放电室中对半导体晶片进行放电处理。 该方法还包括在放电过程之后通过使用第一处理模块来处理半导体晶片。 在放电过程中，基于半导体晶片表面的特性调整施加在半导体晶片上的带电粒子。

公开(公告)号：US20150228447A1

公开(公告)日：2015-08-13

申请号：US14422552

申请日：2013-06-28

Applicant: Hitachi High-Technologies Corporation

Inventor： Yusuke Ominami ,  Sukehiro Ito

IPC: H01J37/16 ,  H01J37/26 ,  H01J37/244

CPC classification number: H01J37/16 ,  H01J37/00 ,  H01J37/18 ,  H01J37/20 ,  H01J37/244 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/2002 ,  H01J2237/24455 ,  H01J2237/2605

Abstract: A sample observation method includes irradiating a sample with a primary charged particle beam, detecting a secondary charged particle signal obtained by the irradiating, and observing the sample. The method is characterized by causing the primary charged particle beam generated in a charged particle optical lens barrel, which is maintained in a vacuum state, to be transmitted or passed through a separating film disposed to isolate a space in which the sample is placed from the charged particle optical lens barrel; and detecting a transmitted charged particle beam obtained by irradiating the sample, placed in an atmospheric pressure or a predetermined gas atmosphere of a slightly negative pressure state compared with the atmospheric pressure, with the primary charged particle beam.

Abstract translation: 样品观察方法包括用初级带电粒子束照射样品，检测通过照射获得的二次带电粒子信号，并观察样品。 该方法的特征在于使保持在真空状态的带电粒子光学镜筒中产生的初级带电粒子束透过或通过分离膜，以将样品放置的空间从 带电粒子光学镜头镜筒; 并且与初级带电粒子束一起检测放置在与大气压相比的微小负压状态的大气压或预定气体气氛中的样品所获得的透射带电粒子束。

公开(公告)号：US20150022654A1

公开(公告)日：2015-01-22

申请号：US13948118

申请日：2013-07-22

Applicant: Applied Materials Israel Ltd.

Inventor： Gadi Greenberg ,  Idan Kaizerman ,  Zeev Zohar

IPC: G01N21/95 ,  G02B21/00 ,  G06T7/00

CPC classification number: G05B19/41875 ,  G05B2219/45031 ,  G05B2219/50064 ,  G06T7/0004 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/00 ,  H01J2237/2817 ,  H01L22/20

Abstract: Inspection apparatus includes an imaging module, which is configured to capture images of defects at different, respective locations on a sample. A processor is coupled to process the images so as to automatically assign respective classifications to the defects, and to autonomously control the imaging module to continue capturing the images responsively to the assigned classifications.

Abstract translation: 检查装置包括成像模块，其被配置为在样本上的不同的相应位置捕获缺陷的图像。 耦合处理器以处理图像，以便自动分配对缺陷的分类，并且自动地控制成像模块以响应于所分配的分类继续捕获图像。