公开(公告)号：US20180254195A1

公开(公告)日：2018-09-06

申请号：US15968605

申请日：2018-05-01

Applicant: Lam Research Corporation

Inventor： Waikit Fung ,  Liang Meng ,  Anand Chandrashekar

IPC: H01L21/3213 ,  H01J37/32 ,  C23C16/04 ,  H01L21/768 ,  H01L21/67 ,  H01L21/285 ,  C23C16/505

CPC classification number: H01L21/32136 ,  C23C16/045 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/67069 ,  H01L21/76877

Abstract: Methods and apparatuses for filling features with metal materials such as tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a metal such as a tungsten-containing material followed by removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ratio feature. The portion may be removed by exposing the tungsten-containing material to a plasma generated from a fluorine-containing nitrogen-containing gas and pulsing and/or ramping the plasma during the exposure.

公开(公告)号：US10062550B2

公开(公告)日：2018-08-28

申请号：US15142629

申请日：2016-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Pyo Hong ,  Kwang-Nam Kim ,  Sang-Dong Kwon ,  Jong-Woo Sun ,  Sang-Rok Oh ,  Yong-Moon Jang

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32119 ,  H01L21/67248

Abstract: Provided are substrate processing apparatuses including a temperature measurement unit. The substrate processing apparatus comprises a chamber including a substrate processing region, a dielectric sheet that is disposed on the substrate processing region and includes an insertion hole and a temperature measurement unit that is disposed on the dielectric sheet to measure the temperature of the dielectric sheet, and has a screw portion inserted into the insertion hole, wherein each of the insertion hole and the screw portion has thread helixes meshed with each other.

公开(公告)号：US20180233325A1

公开(公告)日：2018-08-16

申请号：US15952834

申请日：2018-04-13

Applicant: Lam Research Corporation

Inventor： Keren Jacobs Kanarik ,  Samantha Tan ,  Thorsten Lill ,  Meihua Shen ,  Yang Pan ,  Jeffrey Marks ,  Richard Wise

IPC: H01J37/32 ,  H01L21/306 ,  H01L21/321 ,  H01L21/3105 ,  G03F1/60 ,  H01L21/3213 ,  H01L21/302 ,  H01L21/3065 ,  C23F4/00 ,  H01L21/311 ,  G03F1/22

CPC classification number: H01J37/321 ,  C23F4/00 ,  G03F1/22 ,  G03F1/60 ,  H01J2237/334 ,  H01L21/302 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31122 ,  H01L21/321 ,  H01L21/32136

Abstract: Methods of etching and smoothening films by exposing to a halogen-containing plasma and an inert plasma within a bias window in cycles are provided. Methods are suitable for etching and smoothening films of various materials in the semiconductor industry and are also applicable to applications in optics and other industries.

公开(公告)号：US20180197777A1

公开(公告)日：2018-07-12

申请号：US15860827

申请日：2018-01-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hidehiko KARASAKI ,  Hidefumi SAEKI ,  Atsushi HARIKAI

IPC: H01L21/78 ,  H01L23/544 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/02 ,  B23K26/00

CPC classification number: H01L21/78 ,  B23K26/062 ,  B23K26/359 ,  B23K2103/56 ,  H01J37/321 ,  H01J2237/334 ,  H01L21/02076 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/82 ,  H01L23/544 ,  H01L2223/5446

Abstract: Provided is a manufacturing process of an element chip, which comprises a preparation step for preparing a substrate including a semiconductor layer having first and second sides and a wiring layer on the first side thereof, the substrate having a plurality of dicing regions and element regions defined by the dicing regions, a scribing step for radiating a laser beam towards the first side of the wiring layer onto the dicing regions to form apertures exposing the semiconductor layer along the dicing regions, and a dicing step for dicing the substrate along the apertures into a plurality of the element chips, wherein the laser beam has a beam profile having a M-shaped distribution whose peripheral intensity is greater than a central intensity in a width direction of the laser beam along the dicing regions.

公开(公告)号：US20180195164A1

公开(公告)日：2018-07-12

申请号：US15917046

申请日：2018-03-09

Applicant: IonQuest LLC

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/00 ,  C23C14/14 ,  C23C14/06 ,  C23C14/34

CPC classification number: C23C14/354 ,  C23C14/0057 ,  C23C14/0605 ,  C23C14/14 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/321 ,  H01J37/32825 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3464 ,  H01J37/3467 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53238

Abstract: A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

公开(公告)号：US20180174799A1

公开(公告)日：2018-06-21

申请号：US15736278

申请日：2017-05-25

Applicant: Boe Technology Group Co., Ltd. ,  Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Inventor： Yu WEI ,  Jun LIU

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32119 ,  H01J37/32651 ,  H01J2237/3344

Abstract: The present disclosure provides an inductively coupled plasma device, comprising a reaction chamber, a dielectric coupling plate, and a coil above the dielectric coupling plate. The dielectric coupling plate comprises at least two layers. The dielectric coupling plate comprises a plurality of regions, each region being provided with an electric field regulating structure, the electric field regulating structure being located between the at least two layers of the dielectric coupling plate. The electric field regulating structure is configured to regulate an intensity of an electric field that enters the reaction chamber through each region of the dielectric coupling plate.

公开(公告)号：US20180151380A1

公开(公告)日：2018-05-31

申请号：US15822658

申请日：2017-11-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki OGAWA ,  Akitaka SHIMIZU ,  Shigeki DOBA

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/3174 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/6719

Abstract: There is provided a substrate processing apparatus which includes: a process container configured to accommodate a substrate; a partition member disposed between plasma generated inside the process container and the substrate, the partition member configured to selectively transmit radicals in the plasma toward the substrate; and a heat shield plate disposed between the partition member and the substrate. The heat shield plate is disposed so as to face the substrate. The heat shield plate is made of metal or silicon and is connected to the process container.

公开(公告)号：US09978593B2

公开(公告)日：2018-05-22

申请号：US15462642

申请日：2017-03-17

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tomohiro Okumura

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/02689 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32339 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H05H1/30

Abstract: A plasma processing device, a plasma processing method and a manufacturing method of an electronic device with excellent uniformity, are capable of performing heating and high-speed processing for a short period of time as well as controlling the distribution of heating performances in a linear direction (amounts of heat influx to a substrate). In an inductively-coupled plasma torch unit, coils, a first ceramic block and a second ceramic block are arranged, and a chamber has an annular shape. A plasma P is applied to a substrate at an opening of the chamber. The chamber and the substrate are relatively moved in a direction perpendicular to a longitudinal direction of the opening. Plural gas jetting ports jetting a gas toward a substrate stage are provided side by side in a direction of a line formed by the opening, thereby controlling the distribution of heating performances in the linear direction and realizing plasma processing with excellent uniformity.

公开(公告)号：US20180138020A1

公开(公告)日：2018-05-17

申请号：US15863326

申请日：2018-01-05

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Bon-Woong Koo ,  Yong-Seok Hwang ,  Kyong-Jae Chung

IPC: H01J37/32

CPC classification number: H01J37/32458 ,  H01J27/16 ,  H01J37/08 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32669 ,  H01J2237/024 ,  H01J2237/065 ,  H01J2237/31701 ,  H01J2237/327 ,  H01J2237/3365

Abstract: Provided herein are approaches for dynamically modifying plasma volume in an ion source chamber by positioning an end plate and radio frequency (RF) antenna at a selected axial location. In one approach, an ion source includes a plasma chamber having a longitudinal axis extending between a first end wall and a second end wall, and an RF antenna adjacent a plasma within the plasma chamber, wherein the RF antenna is configured to provide RF energy to the plasma. The ion source may further include an end plate disposed within the plasma chamber, adjacent the first end wall, the end plate actuated along the longitudinal axis between a first position and a second position to adjust a volume of the plasma. By providing an actuable end plate and RF antenna, plasma characteristics may be dynamically controlled to affect ion source characteristics, such as composition of ion species, including metastable neutrals.

公开(公告)号：US09972776B2

公开(公告)日：2018-05-15

申请号：US15260351

申请日：2016-09-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Makoto Suyama ,  Naohiro Yamamoto ,  Masato Ishimaru ,  Hidenori Toyooka ,  Norihiro Hosaka

IPC: H01J37/32 ,  H01L43/12 ,  B08B9/08 ,  H01L43/08 ,  H01L43/10 ,  B08B7/00

CPC classification number: H01L43/12 ,  B08B7/0035 ,  B08B9/08 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/32651 ,  H01J37/32853 ,  H01J37/32862 ,  H01J2237/334 ,  H01J2237/335 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.