公开(公告)号：US20050103442A1

公开(公告)日：2005-05-19

申请号：US11022396

申请日：2004-12-22

Applicant: Jian Chen ,  Mukund Srinivasan ,  Eric Lenz

Inventor： Jian Chen ,  Mukund Srinivasan ,  Eric Lenz

IPC: H05H1/46 ,  B01J19/08 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  C23F1/00

CPC classification number: H01J37/32871 ,  H01J37/32082 ,  H01J37/32623

Abstract: A plasma confining assembly for minimizing unwanted plasma formations in regions outside of a process region in a process chamber is disclosed. The plasma confining assembly includes a first confining element and second confining element positioned proximate the periphery of the process region. The second confining element is spaced apart from the first confining element. The first confining element includes an exposed conductive surface that is electrically grounded and the second confining element includes an exposed insulating surface, which is configured for covering a conductive portion that is electrically grounded. The first confining element and the second confining element substantially reduce the effects of plasma forming components that pass therebetween. Additionally, the plasma confining assembly may include a third confining element, which is formed from an insulating material and disposed between the first confining element and the second confining element, and proximate the periphery of the process region. The third confining element further reduces the effects of plasma forming components that pass between the first confining element and the second confining element.

Abstract translation: 公开了一种用于最小化处理室中的处理区域外的区域中的不需要的等离子体形成的等离子体封闭组件。 等离子体限制组件包括靠近处理区域的周边定位的第一限制元件和第二约束元件。 第二限制元件与第一限制元件间隔开。 第一限制元件包括电接地的暴露的导电表面，并且第二限制元件包括暴露的绝缘表面，其被配置为覆盖电接地的导电部分。 第一限制元件和第二限制元件大大减少了通过它们的等离子体形成部件的影响。 另外，等离子体限制组件可以包括由绝缘材料形成并且设置在第一限制元件和第二限制元件之间以及靠近处理区域的周边的第三限制元件。 第三限制元件进一步降低了在第一限制元件和第二限制元件之间通过的等离子体形成元件的影响。

公开(公告)号：US06818140B2

公开(公告)日：2004-11-16

申请号：US10002397

申请日：2001-10-31

Applicant: Jian Ding

Inventor： Jian Ding

IPC: H01L2100

CPC classification number: H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

Abstract: A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled. In some cases, the plasma source power applicator is an inductive antenna overlying the semiconductor ceiling, and the ceiling has a cooling/heating apparatus contacting the ceiling through semiconductor rings. The inductive antenna in this case constitutes inductive elements between adjacent ones of the semiconductor rings.

Abstract translation: 一种高等离子体密度蚀刻工艺，用于在等离子体反应器室中蚀刻覆盖工件上的非含氧层的含氧层，通过提供覆盖在工件上并容纳半导体材料的室顶部，向腔室供应工艺气体 包含蚀刻剂前体物质，聚合物前体物质和氢气，将等离子体源功率施加到室中，并将天花板冷却到约150℃或以下的温度范围。蚀刻剂和聚合物前体物质含有氟，并且室顶部半导体材料 包括氟清除剂前体材料。 优选地，工艺气体包括CHF 3和CH 2 F 2中的至少一种。 优选地，处理气体还包括包含惰性气体的物质，例如HeH 2或Ar。 如果室是包括加热的氟清除剂前体材料的类型，则将该材料加热到高于聚合物冷凝温度，同时天花板被冷却。 在一些情况下，等离子体源功率施加器是覆盖在半导体天花板上的感应天线，天花板具有通过半导体环接触天花板的冷却/加热设备。 在这种情况下，感应天线在相邻的半导体环之间构成感应元件。

公开(公告)号：US20040157445A1

公开(公告)日：2004-08-12

申请号：US10479458

申请日：2003-12-02

Inventor： Steven Fink

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01J37/32871 ,  H01J37/32623 ,  H01J2237/3341 ,  H01L21/31116 ,  H01L21/67069

Abstract: An etch profile tailoring system (100), for use with an etching process carried out on a wafer (130), has a scavenging plate (170) with a baseline etch profile, and at least one etch profile tuning structure (such as a plug) (160) replaceably disposed with respect to the scavenging plate (170) and configured to alter the baseline etch profile during the etching process so as to arrive at a desired etch profile. A method of performing maintenance on an etch profile tailoring system (100) involves the steps of performing an etching process on a wafer in accordance with a desired etch profile, determining whether or not maintenance should be performed, and (if the maintenance decision indicates that maintenance should be performed) replacing with a second plug before conducting an etching process on additional wafers.

Abstract translation: 与在晶片（130）上执行的蚀刻工艺一起使用的蚀刻轮廓定制系统（100）具有具有基线蚀刻轮廓的扫气板（170）和至少一个蚀刻轮廓调谐结构（诸如插头 ）（160）相对于扫气板（170）可替换地设置并且被配置为在蚀刻过程期间改变基线蚀刻轮廓，以便达到期望的蚀刻轮廓。 在蚀刻轮廓定制系统（100）上执行维护的方法包括以下步骤：根据期望的蚀刻轮廓对晶片进行蚀刻处理，确定是否应执行维护，以及（如果维护决定指示 在进行另外的晶片的蚀刻处理之前，应该用第二个插头替换维护。

公开(公告)号：US06699375B1

公开(公告)日：2004-03-02

申请号：US09609015

申请日：2000-06-29

Applicant: Steven C. Crocker

Inventor： Steven C. Crocker

IPC: C23C1434

CPC classification number: H01J37/32871 ,  C23C14/564 ,  C23C16/4404 ,  H01J37/32504

Abstract: One embodiment relates to an apparatus for sputtering material onto a workpiece, the apparatus including a vacuum chamber and a target disposed in the vacuum chamber, the target comprising a material to be deposited onto said workpiece. The apparatus also includes a holder for the workpiece and at least one recyclable process kit component positioned to accumulate material sputtered from the target. The process kit component includes a base metal layer including titanium and an outer layer of titanium nitride. The titanium nitride layer acts as an etch stop during recycling of the process kit component. The process kit component may include a part selected from the group of a shield, pedestal, shutter, coil, collimator, deposition ring, cover ring, and clamp ring.

Abstract translation: 一个实施例涉及用于将材料溅射到工件上的装置，该装置包括设置在真空室中的真空室和靶，该靶包括待沉积到所述工件上的材料。 该设备还包括用于工件的保持器和至少一个可循环使用的处理套件组件，其被定位成积聚从目标溅射的材料。 工艺套件组件包括包含钛和氮化钛外层的基底金属层。 氮化钛层在处理套件组件的再循环期间用作蚀刻停止。 处理套件组件可以包括从屏蔽，基座，快门，线圈，准直器，沉积环，盖环和夹紧环组中选择的部件。

公开(公告)号：US20030098288A1

公开(公告)日：2003-05-29

申请号：US10315054

申请日：2002-12-10

Inventor： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

IPC: C23F001/00

CPC classification number: H01J37/32871 ,  H01L21/31116 ,  H01L21/32136

Abstract: Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. An etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce molecular chemical species such as CF4, CF2, CF3 and C2F4 for etching. This method assures a high etch rate and high selectivity while keeping a process window wide.

公开(公告)号：US06518195B1

公开(公告)日：2003-02-11

申请号：US09504312

申请日：2000-02-15

Applicant: Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

Inventor： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

IPC: H01L213065

CPC classification number: H01J37/32871 ,  C23C16/507 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract translation: 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到10晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，以及蚀刻工艺沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US06511608B1

公开(公告)日：2003-01-28

申请号：US09662162

申请日：2000-09-14

Applicant: Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

Inventor： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

IPC: H01L213065

CPC classification number: H01J37/32871 ,  H01L21/31116 ,  H01L21/32136

Abstract: Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. An etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce molecular chemical species such as CF4, CF2, CF3 and C2F4 for etching. This method assures a high etch rate and high selectivity while keeping a process window wide.

Abstract translation: 由于环境污染防治法，PFC（全氟化碳）和HFC（氢氟碳化合物）两种氧化硅和氮化硅膜的蚀刻气体预计将受到有限的使用或将来难以获得。 含有氟原子的蚀刻气体被引入到等离子体室中。 在进行等离子体蚀刻的区域中，使含氟气体等离子体与固态碳反应，以产生分子化学物质如CF4，CF2，CF3和C2F4用于蚀刻。 该方法确保了高蚀刻速率和高选择性，同时保持了工艺窗口宽。

公开(公告)号：US06506312B1

公开(公告)日：2003-01-14

申请号：US09299550

申请日：1999-04-26

Applicant: Roger L. Bottomfield

Inventor： Roger L. Bottomfield

IPC: B44C122

CPC classification number: H01J37/32871 ,  C23C14/564 ,  C23C16/4401 ,  H01J37/32623 ,  H01J2237/022

Abstract: The present invention provides a method of reducing or delaying the exfoliation of deposited films within a vapor deposition system. The method of preventing the delamination of thin films deposited of a vapor deposition chamber components includes the steps of depositing a series of thin films on a discontinuous surface. The internal stress of the deposited thin film laminates are relaxed by fragmenting the deposited thin film laminates into a plurality of discontinuous surfaces. Thus allowing the exfoliation process of the thin film laminates to be delayed.

Abstract translation: 本发明提供减少或延迟蒸镀系统内的沉积膜的剥离的方法。 防止蒸镀室成分沉积的薄膜分层的方法包括在不连续表面上沉积一系列薄膜的步骤。 沉积的薄膜层压体的内部应力通过将沉积的薄膜层压体分段成多个不连续表面来松弛。 从而允许薄膜层压板的剥离过程延迟。

公开(公告)号：US06365063B2

公开(公告)日：2002-04-02

申请号：US09350234

申请日：1999-07-09

Applicant: Kenneth S Collins ,  Michael Rice ,  Farahmand E Askarinam ,  Douglas A Buchberger, Jr. ,  Craig A Roderick

Inventor： Kenneth S Collins ,  Michael Rice ,  Farahmand E Askarinam ,  Douglas A Buchberger, Jr. ,  Craig A Roderick

IPC: C23F100

CPC classification number: H01J37/32458 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

Abstract: In a plasma reactor including a reactor chamber, a workpiece support for holding a workpiece inside the chamber during processing and an inductive antenna, a window electrode proximal a wall of the chamber, the antenna and wall being positioned adjacently, the window electrode being operable as (a) a capacitive electrode accepting RF power to capacitively coupled plasma source power into the chamber, and (b) a window electrode passing Rf power therethrough from said antenna into the chamber to inductively couple plasma source power into the chamber.

Abstract translation: 在包括反应器室的等离子体反应器中，用于在处理期间将工件保持在室内的工件支撑件和感应天线，靠近室壁的窗口电极，天线和壁相邻地定位，窗口电极可操作为 （a）容纳RF功率的电容电极，用于将等离子体源功率电容耦合到腔室中，以及（b）将来自所述天线的Rf功率从所述天线传递到腔室中以将等离子体源功率感应耦合到腔室中的窗口电极。

公开(公告)号：US06352049B1

公开(公告)日：2002-03-05

申请号：US09119417

申请日：1998-07-20

Applicant: Gerald Yin ,  Arnold Kolandenko ,  Hong Ching Shan ,  Peter Loewenhardt ,  Chii Lee ,  Yan Ye ,  Xueyan Qian ,  Songlin Xu ,  Arthur Chen ,  Arthur Sato ,  Michael Grimbergen ,  Diana Ma ,  John Yamartino ,  Chun Yan ,  Wade Zawalski

Inventor： Gerald Yin ,  Arnold Kolandenko ,  Hong Ching Shan ,  Peter Loewenhardt ,  Chii Lee ,  Yan Ye ,  Xueyan Qian ,  Songlin Xu ,  Arthur Chen ,  Arthur Sato ,  Michael Grimbergen ,  Diana Ma ,  John Yamartino ,  Chun Yan ,  Wade Zawalski

IPC: C23E1648

CPC classification number: H01J37/32871

Abstract: The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.

Abstract translation: 本发明提供了一种用于工件的等离子体辅助处理的装置和方法，其提供对处理等离子体内的物质密度的单独控制。 本发明具有处理室和至少一个辅助室。 辅助室能够产生旁路血浆并将其输送到处理室。 为了控制处理室内的颗粒物质的密度，本发明可以具有：插入在侧室和处理室之间的过滤器，主室源功率，向处理室提供单独输入的若干附属室，或其组合。 附带等离子体可以是：过滤，与初级室产生的等离子体组合，与另一副侧血浆或其组合组合以分别控制包含处理血浆的物质的密度。