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    LOW-PRESSURE PLASMA SYSTEM WITH SEQUENTIAL CONTROL PROCESS
    33.
    发明申请
    LOW-PRESSURE PLASMA SYSTEM WITH SEQUENTIAL CONTROL PROCESS 审中-公开
    具有顺序控制过程的低压等离子体系统

    公开(公告)号：US20170011888A1

    公开(公告)日：2017-01-12

    申请号：US15271137

    申请日：2016-09-20

    Applicant: Christof-Herbert Diener

    Inventor： Christof-Herbert Diener

    IPC: H01J37/32 ,  H01J37/244 ,  H01J37/18

    CPC classification number: H01J37/32449 ,  H01J37/18 ,  H01J37/244 ,  H01J37/32009 ,  H01J37/32825 ,  H01J37/32926 ,  H01J2237/186

    Abstract: The low pressure plasma system includes a treatment chamber which is pumped out in a first process step by means of a pump. In a second process step a gas supply valve is opened in order to achieve a defined gas composition in the treatment chamber at low pressure. In a third process step a plasma generator is switched on in order to ignite a plasma in the treatment chamber. In a fourth process step a flushing valve can be opened in order to flush the treatment chamber. In a fifth process step the treatment chamber can be ventilated by way of a ventilation valve. The sequential switching element can be a rotary switch and include a zero switching position where the low pressure plasma system is off. The sequential switching element renders possible a simple embodiment of the low pressure plasma system and its intuitive operation.

    Abstract translation: 低压等离子体系统包括处理室，其通过泵在第一工艺步骤中泵出。 在第二工艺步骤中，打开气体供给阀以便在处理室中以低压实现确定的气体组成。 在第三工艺步骤中，等离子体发生器被接通以点燃处理室中的等离子体。 在第四个处理步骤中，可以打开冲洗阀以便冲洗处理室。 在第五工艺步骤中，处理室可以通过通风阀来通风。 顺序开关元件可以是旋转开关，并且包括零开关位置，其中低压等离子体系统关闭。 顺序开关元件使得低压等离子体系统的简单实施例及其直观的操作成为可能。

    Frequency tuning for pulsed radio frequency plasma processing
    34.
    发明授权
    Frequency tuning for pulsed radio frequency plasma processing 有权
    脉冲射频等离子体处理的频率调谐

    公开(公告)号：US09544987B2

    公开(公告)日：2017-01-10

    申请号：US14320268

    申请日：2014-06-30

    Applicant: Advanced Energy Industries, Inc.

    Inventor： Michael Mueller ,  Myeong Yeol Choi

    IPC: H05H1/46 ,  H01J37/32

    CPC classification number: H01J37/32155 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/3299 ,  H05H1/46 ,  H05H2001/4645 ,  H05H2001/4682

    Abstract: This disclosure describes systems, methods, and apparatus for pulsed RF power delivery to a plasma load for plasma processing of a substrate. In order to maximize power delivery, a calibration phase using a dummy substrate or no substrate in the chamber, is used to ascertain a preferred fixed initial RF frequency for each pulse. This fixed initial RF frequency is then used at the start of each pulse during a processing phase, where a real substrate is used and processed in the chamber.

    Abstract translation: 本公开描述了用于脉冲RF功率输送到等离子体负载以用于衬底的等离子体处理的系统，方法和装置。 为了最大化功率传递，使用在腔室中使用虚设衬底或无衬底的校准阶段来确定每个脉冲的优选的固定初始RF频率。 然后，在处理阶段，在每个脉冲的开始处使用该固定的初始RF频率，其中在腔室中使用和处理实际的基板。

    System, method and apparatus for RF power compensation in a plasma processing system
    36.
    发明授权
    System, method and apparatus for RF power compensation in a plasma processing system 有权
    等离子体处理系统中RF功率补偿的系统，方法和装置

    公开(公告)号：US09508529B2

    公开(公告)日：2016-11-29

    申请号：US14521776

    申请日：2014-10-23

    Applicant: Lam Research Corporation

    Inventor： John C. Valcore, Jr. ,  Henry Povolny

    IPC: H01J37/32

    CPC classification number: H01J37/32082 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32926

    Abstract: Plasma processing systems and methods including a plasma processing chamber and an RF transmission path. The plasma processing chamber including an electrostatic chuck. The RF transmission path including one or more RF generators, a match circuit coupled the RF generator and an RF feed coupling the match circuit to the electrostatic chuck. The system also includes an RF return path coupled between the plasma processing chamber and the RF generator. A plasma processing system controller is coupled to the plasma processing chamber and the RF transmission path. The controller includes recipe logic for at least one plasma processing recipe including multiple plasma processing settings and an RF power compensation logic for adjusting at least one of the plasma processing settings.

    Abstract translation: 等离子体处理系统和方法，包括等离子体处理室和RF传输路径。 等离子体处理室包括静电卡盘。 RF传输路径包括一个或多个RF发生器，耦合RF发生器的匹配电路和将匹配电路耦合到静电卡盘的RF馈送。 该系统还包括耦合在等离子体处理室和RF发生器之间的RF返回路径。 等离子体处理系统控制器耦合到等离子体处理室和RF传输路径。 所述控制器包括用于至少一个包括多个等离子体处理设置的等离子体处理配方的配方逻辑和用于调整等离子体处理设置中的至少一个的RF功率补偿逻辑。

    Monitoring a Discharge in a Plasma Process
    37.
    发明申请
    Monitoring a Discharge in a Plasma Process 审中-公开
    监测等离子体过程中的放电

    公开(公告)号：US20160343549A1

    公开(公告)日：2016-11-24

    申请号：US15230017

    申请日：2016-08-05

    Applicant: TRUMPF HUETTINGER SP. Z O.O.

    Inventor： Andrzej Gieraltowski ,  Adam Grabowski ,  Piotr Lach ,  Marcin Zelechowski

    IPC: H01J37/32 ,  G01R19/165

    CPC classification number: H01J37/32944 ,  G01R19/165 ,  H01J37/32128 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32935

    Abstract: Systems and methods of monitoring a discharge in a plasma process are disclosed. The methods include supplying the plasma process with a periodic power supply signal, determining a first signal waveform in a first time interval within a first period of the power supply signal, determining a second signal waveform in a second time interval within a second period of the power supply signal, the second time interval being at a position within the second period corresponding to a position of the first time interval within the first period, comparing the second signal waveform with a reference signal waveform to obtain a first comparison result, determining that the first comparison result corresponds to a given first comparison result, and in response, time-shifting one of the second signal waveform and the reference signal waveform, and comparing the time-shifted signal waveform with the non-time-shifted signal waveform to obtain a second comparison result.

    Abstract translation: 公开了在等离子体工艺中监测放电的系统和方法。 所述方法包括向等离子体处理提供周期性电源信号，在电源信号的第一周期内以第一时间间隔确定第一信号波形，在第二时间间隔内在第二时间段内确定第二信号波形 电源信号，所述第二时间间隔处于与所述第一时段内的所述第一时间间隔的位置对应的所述第二时段内的位置，将所述第二信号波形与参考信号波形进行比较，以获得第一比较结果， 第一比较结果对应于给定的第一比较结果，并且作为响应，对第二信号波形和参考信号波形中的一个进行时移，并且将时移信号波形与非时移信号波形进行比较，以获得 第二个比较结果。

    Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
    38.
    发明授权
    Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching 有权
    蚀刻速率建模及其使用具有多个参数，用于室内和室对室匹配

    公开(公告)号：US09502221B2

    公开(公告)日：2016-11-22

    申请号：US14243705

    申请日：2014-04-02

    Applicant: Lam Research Corporation

    Inventor： John C. Valcore, Jr. ,  Harmeet Singh ,  Henry Povolny

    IPC: H01J7/24 ,  H01J31/26 ,  H01J37/32 ,  G05B19/418

    CPC classification number: H01J37/32926 ,  G05B19/418 ,  H01J37/32183 ,  H01J37/32935 ,  H01J37/3299

    Abstract: A method includes receiving a voltage and current measured at an output of an RF generator of a first plasma system and calculating a first model etch rate based on the voltage and current, and a power. The method further includes receiving a voltage and current measured at an output of the RF generator of a second plasma system, determining a second model etch rate based on the voltage and current at the output of the RF generator of the second plasma system, and comparing the second model etch rate with the first model etch rate. The method includes adjusting a power at the output of the RF generator of the second plasma system to achieve the first model etch rate associated with the first plasma system upon determining that the second model etch rate does not match the first model etch rate. The method is executed by a processor.

    Abstract translation: 一种方法包括接收在第一等离子体系统的RF发生器的输出处测量的电压和电流，并且基于电压和电流以及功率来计算第一模型蚀刻速率。 该方法还包括接收在第二等离子体系统的RF发生器的输出处测量的电压和电流，基于第二等离子体系统的RF发生器的输出处的电压和电流确定第二模型蚀刻速率，以及比较 具有第一模型蚀刻速率的第二模型蚀刻速率。 该方法包括在确定第二模型蚀刻速率与第一模型蚀刻速率不匹配时，调整第二等离子体系统的RF发生器的输出端的功率以实现与第一等离子体系统相关联的第一模型蚀刻速率。 该方法由处理器执行。

    COBALT ETCH BACK
    39.
    发明申请
    COBALT ETCH BACK 有权

    公开(公告)号：US20160314985A1

    公开(公告)日：2016-10-27

    申请号：US14749285

    申请日：2015-06-24

    Applicant: Lam Research Corporation

    Inventor： Jialing Yang ,  Baosuo Zhou ,  Meihua Shen ,  Thorsten Lill ,  John Hoang

    IPC: H01L21/3065 ,  H01L21/308

    CPC classification number: H01J37/32449 ,  H01J37/32899 ,  H01J37/32926 ,  H01L21/32136

    Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.

    Abstract translation: 提供了在基板上蚀刻钴的方法。 一些方法包括将基底暴露于含硼卤化物气体和添加剂，并将基底暴露于活化气体和等离子体。 添加剂改善了在掩模表面上比在金属表面上选择性地沉积更厚的含硼卤化物材料层。 添加剂包括H2，CH4，CF4，NF3和Cl2。 含硼的卤化物气体包括BCl3，BBr3，BF3和BI3。 曝光可以在两个或更多个循环中执行，其中在两个或更多个循环中每次曝光的持续时间和/或偏置功率的变化。

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