公开(公告)号：US20050006601A1

公开(公告)日：2005-01-13

申请号：US10885666

申请日：2004-07-08

Applicant: Masato Muraki ,  Hiroya Ohta ,  Osamu Kamimura

Inventor： Masato Muraki ,  Hiroya Ohta ,  Osamu Kamimura

IPC: H01J37/153 ,  H01J37/317 ,  H01J3/26 ,  G21K5/10 ,  H01J37/08

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174

Abstract: A charged particle beam exposure apparatus has a beam shaping optical system which forms an image of a charged particle source that emits charged particle beams, an aperture array and electrostatic lens which form a plurality of images of the charged particle source from the image of the charged particle source, a reduction electron optical system which reduces and projects the plurality of images of the charged particle source onto a wafer, and the first stigmator which generates astigmatism when the beam shaping optical system forms the image of the charged particle source in order to correct astigmatism generated in the reduction electron optical system. A charged particle beam exposure method of exposing a substrate by scanning with charged particle beams includes an adjustment step of making the size in the scanning direction of charged particle beams on the substrate smaller than the size in a direction perpendicular to the direction.

Abstract translation: 带电粒子束曝光装置具有光束整形光学系统，其形成发射带电粒子束的带电粒子源的图像，孔径阵列和静电透镜，其从带电粒子源的图像形成带电粒子源的多个图像 粒子源，还原电子光学系统，其将带电粒子源的多个图像减少并投影到晶片上;以及当束整形光学系统形成带电粒子源的图像以产生像散的第一标示器，以便校正 在还原电子光学系统中产生散光。 通过用带电粒子束扫描使基板曝光的带电粒子束曝光方法包括使基板上的带电粒子束的扫描方向的尺寸小于垂直于该方向的方向上的尺寸的调整步骤。

公开(公告)号：US08022365B2

公开(公告)日：2011-09-20

申请号：US12168940

申请日：2008-07-08

Applicant: Osamu Kamimura ,  Hiroya Ohta

Inventor： Osamu Kamimura ,  Hiroya Ohta

IPC: H01J37/28 ,  H01J3/26

CPC classification number: H01J37/295

Abstract: In an electron microscope to which a phase retrieval method is applied, an image size determined by a pixel size p of a diffraction pattern, a camera length L, and a wavelength λ of an illumination beam is allowed to have a certain relation with an illumination area on a specimen. Further, a beam illumination area or a scanning area of a deflector when a magnified image is observed is set by an illumination adjustment system, so that an image size when the magnified image is used for the phase retrieval method is allowed to have a certain relation with the image size determined by the pixel size of the diffraction pattern, the camera length, and the wavelength of the illumination beam. Accordingly, the information of the diffraction pattern is substantially equal to an object image to be reconstructed.

Abstract translation: 在应用了相位检索方法的电子显微镜中，允许由照射光束的衍射图案的像素尺寸p，照相机长度L和波长λ确定的图像尺寸与照明具有一定关系 标本上的区域。 此外，通过照明调整系统设定观察放大图像时的光束照明区域或偏转器的扫描区域，使得当使用放大图像进行相位检索方法时的图像尺寸被允许具有一定关系 其中图像尺寸由衍射图案的像素尺寸，相机长度和照明光束的波长确定。 因此，衍射图案的信息基本上等于要重构的对象图像。

公开(公告)号：US20100133433A1

公开(公告)日：2010-06-03

申请号：US11958717

申请日：2007-12-18

Applicant: Sayaka TANIMOTO ,  Hiroya Ohta ,  Hiroshi Makino ,  Ryuichi Funatsu

Inventor： Sayaka TANIMOTO ,  Hiroya Ohta ,  Hiroshi Makino ,  Ryuichi Funatsu

IPC: G01N23/225

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J2237/0435 ,  H01J2237/2448 ,  H01J2237/24564 ,  H01J2237/24592

Abstract: A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.

Abstract translation: 由单个电子源形成多个主光束，通过至少一个主光束来控制样品的表面电荷，同时使用除此之外的一次光束进行样品的检查。 此外，对于用于表面电荷控制的一次光束的曝光区域和用于检查的主光束的曝光区域，单独设置表面电场强度。 此外，控制用于表面电荷控制的主光束的电流以及用于表面电荷控制的主光束和用于检查的主光束之间的间隔。

公开(公告)号：US20090014651A1

公开(公告)日：2009-01-15

申请号：US12168940

申请日：2008-07-08

Applicant: Osamu Kamimura ,  Hiroya Ohta

Inventor： Osamu Kamimura ,  Hiroya Ohta

IPC: H01J37/28

CPC classification number: H01J37/295

Abstract: In an electron microscope to which a phase retrieval method is applied, an image size determined by a pixel size p of a diffraction pattern, a camera length L, and a wavelength λ of an illumination beam is allowed to have a certain relation with an illumination area on a specimen. Further, a beam illumination area or a scanning area of a deflector when a magnified image is observed is set by an illumination adjustment system, so that an image size when the magnified image is used for the phase retrieval method is allowed to have a certain relation with the image size determined by the pixel size of the diffraction pattern, the camera length, and the wavelength of the illumination beam. Accordingly, the information of the diffraction pattern is substantially equal to an object image to be reconstructed.

Abstract translation: 在应用了相位检索方法的电子显微镜中，由衍射图案的像素尺寸p，照相机长度L和照明光束的波长λ确定的图像尺寸被允许与照明具有一定关系 标本上的区域。 此外，通过照明调整系统设定观察放大图像时的光束照明区域或偏转器的扫描区域，使得当使用放大图像进行相位检索方法时的图像尺寸被允许具有一定关系 其中图像尺寸由衍射图案的像素尺寸，相机长度和照明光束的波长确定。 因此，衍射图案的信息基本上等于要重构的对象图像。

公开(公告)号：US07378671B2

公开(公告)日：2008-05-27

申请号：US11337603

申请日：2006-01-24

Applicant: Masato Muraki ,  Hiroya Ohta

Inventor： Masato Muraki ,  Hiroya Ohta

IPC: H01J37/304

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/30433

Abstract: A charged particle beam lithography machine for exposing a target exposure surface by using a plurality of charged particle beams. The machine includes a charged particle source to emit a charged particle beam, an aperture substrate which has a plurality of apertures to divide the charged particle beam from the charged particle source into a plurality of charged particle beams, a plurality of electron optical systems which have the apertures as pupils, a charged particle beam optical system which projects, to the target exposure surface, charged particle source images formed by the plurality of electron optical systems, a unit adapted to set the apertures of the aperture substrate to an aperture for exposure and an aperture for aberration measurement to make the plurality of charged particle beams strike the charged particle beam optical system at different incident angles, and a detecting unit adapted to detect a position where the plurality of charged particle beams, which have passed through the aperture for aberration measurement, form images on an image surface of the charged particle beam optical system.

Abstract translation: 一种带电粒子束光刻机，用于通过使用多个带电粒子束来曝光目标曝光表面。 该机器包括用于发射带电粒子束的带电粒子源，具有多个孔径以将带电粒子束从带电粒子源分成多个带电粒子束的孔基底，多个电子光学系统，其具有 作为瞳孔的孔，带电粒子束光学系统，其投影到目标曝光表面，由多个电子光学系统形成的带电粒子源图像，适于将孔径基板的孔径设置为用于曝光的孔径;以及 用于使所述多个带电粒子束以不同的入射角撞击所述带电粒子束光学系统的像差测量孔;以及检测单元，其适于检测穿过所述孔径以进行像差的所述多个带电粒子束的位置 测量，在带电粒子束光学系统的图像表面上形成图像。

公开(公告)号：US07189979B2

公开(公告)日：2007-03-13

申请号：US10822720

申请日：2004-04-13

Applicant: Masahiko Okunuki ,  Hiroya Ohta

Inventor： Masahiko Okunuki ,  Hiroya Ohta

IPC: H01J37/07

CPC classification number: H01J37/065

Abstract: An electron gun includes a cathode portion which emits electrons, an anode portion which accelerates the emission electrons, a bias portion which is arranged between the cathode portion and the anode portion and controls trajectories of the emission electrons, a shielding portion which is arranged below the anode portion and shields some of the emission electrons, and a cooling portion which cools the shielding portion. The bias portion controls the trajectories of the electrons so as to form a crossover between the bias portion and the anode portion, and prevents the electrons from emitting on the anode portion.

Abstract translation: 电子枪包括发射电子的阴极部分，加速发射电子的阳极部分，设置在阴极部分和阳极部分之间的偏置部分，并控制发射电子的轨迹;屏蔽部分布置在 阳极部分并屏蔽一些发射电子;以及冷却部分，其冷却屏蔽部分。 偏置部分控制电子的轨迹，以在偏压部分和阳极部分之间形成交叉，并防止电子在阳极部分上发射。

公开(公告)号：US20060169927A1

公开(公告)日：2006-08-03

申请号：US11337444

申请日：2006-01-24

Applicant: Masato Muraki ,  Hiroya Ohta

Inventor： Masato Muraki ,  Hiroya Ohta

IPC: G21K5/10

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/30433

Abstract: The aberrations of a charged particle beam optical system in a lithography machine are measured. Control amounts to control optical elements included in the charged particle beam optical system are changed, the variations of the aberrations are obtained by executing the aberration measuring step, and the aberration sensitivities of the control amounts are obtained. The control amounts are decided on the basis of the aberrations of the charged particle beam optical system and the aberration sensitivities of the control amounts to set the aberrations of the charged particle beam optical system to target aberrations.

Abstract translation: 测量光刻机中带电粒子束光学系统的像差。 控制量控制包含在带电粒子束光学系统中的光学元件的变化，通过执行像差测量步骤获得像差的变化，并获得控制量的像差灵敏度。 基于带电粒子束光学系统的像差和控制量的像差敏感度来确定控制量，以将带电粒子束光学系统的像差设置为目标像差。

公开(公告)号：US07067830B2

公开(公告)日：2006-06-27

申请号：US10629623

申请日：2003-07-30

Applicant: Haruo Yoda ,  Yasunari Souda ,  Hiroya Ohta ,  Yoshikiyo Yui ,  Shinichi Hashimoto

Inventor： Haruo Yoda ,  Yasunari Souda ,  Hiroya Ohta ,  Yoshikiyo Yui ,  Shinichi Hashimoto

IPC: H01J37/08

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/31764 ,  H01J2237/31767

Abstract: The dimension of the main field as a unit region for exposure is set to an integral submultiple of the arrangement pitch of the LSI to be exposed, by the control computer 62, and the exposure data stored in the form associated with electron beams from a data generation circuit 64 is limited to one-chip data alone in units of a stripe. This data is repeatedly read out to write the stripe. Further, a storage circuit 66 is provided to store the exposure data by means of a double buffer memory unit for each electron beam. While LSI is written according to one of the buffers, the next exposure stripe data is prepared on the other buffer, thereby bringing about a substantial reduction in the required speed of the exposure data generation circuit.

Abstract translation: 通过控制计算机62将作为曝光的单位区域的主场的尺寸设定为要暴露的LSI的排列间距的整数倍，并且以与来自数据的电子束相关联的形式存储的曝光数据 发生电路64仅以条形为单位限于单芯片数据。 该数据被重复读出以写入条带。 此外，存储电路66用于通过用于每个电子束的双缓冲存储器单元来存储曝光数据。 当根据缓冲器中的一个写入LSI时，在另一个缓冲器上准备下一个曝光条带数据，从而显着降低曝光数据产生电路的所需速度。

公开(公告)号：US07049607B2

公开(公告)日：2006-05-23

申请号：US10951769

申请日：2004-09-29

Applicant: Yasunari Sohda ,  Hiroya Ohta ,  Osamu Kamimura ,  Susumu Gotoh

Inventor： Yasunari Sohda ,  Hiroya Ohta ,  Osamu Kamimura ,  Susumu Gotoh

IPC: G01N23/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/3045

Abstract: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

Abstract translation: 电子束写入设备具有电子源和电子光学系统，用于通过具有至少两个不同偏转速度的偏转装置扫描从电子源在样品上发射的电子束。 使用物镜在样品上形成期望的图案电子束通过用偏转装置的高速扫描移动，以重复形成图案化的束。 电子束通过与偏转装置的低速扫描同步于重复的一个周期而在标记上移动以进行光束校正。 使用用于背散射或二次电子的检测器校正电子束的位置或偏转距离或消隐时间。

公开(公告)号：US20060060775A1

公开(公告)日：2006-03-23

申请号：US11207710

申请日：2005-08-22

Applicant: Makoto Sakakibara ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Yasunari Sohda ,  Noriyuki Tanaka ,  Yasuhiro Someda

Inventor： Makoto Sakakibara ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Yasunari Sohda ,  Noriyuki Tanaka ,  Yasuhiro Someda

IPC: G01N23/00

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G01R19/0061 ,  H01J37/243 ,  H01J2237/30472

Abstract: A technology capable of reducing the influence of the noise overlapped in a long transmission line when accurately measuring weak beam current in an electron beam writing system and capable of accurately and efficiently measuring weak beam current in a beam writing system using multiple beams is provided. With using a switch for connecting and disconnecting an electron beam detecting device and a detected signal line, the electron beam detecting device is disconnected from the detected signal line to accumulate the detected signals in the electron beam detecting device during the beam current measurement. Simultaneously with the finish of the measurement, the electron beam detecting device and the detected signal line are connected to measure the accumulated signals. Also, in order to simultaneously perform the measurement method, a plurality of electron beam detecting devices and switches are used to simultaneously measure a plurality of electron beams with high accuracy.

Abstract translation: 提供了一种能够在精确测量电子束写入系统中的弱光束电流的同时减少重叠在长传输线上的噪声影响的技术，并且能够精确高效地测量使用多个光束的光束写入系统中的弱光束电流。 通过使用用于连接和断开电子束检测装置的开关和检测到的信号线，电子束检测装置与检测到的信号线断开，以在束电流测量期间将检测到的信号累积在电子束检测装置中。 在测量结束的同时，连接电子束检测装置和检测信号线来测量累积信号。 此外，为了同时进行测量方法，使用多个电子束检测装置和开关以高精度同时测量多个电子束。