公开(公告)号：US08592776B2

公开(公告)日：2013-11-26

申请号：US12554577

申请日：2009-09-04

Applicant: Momoyo Enyama ,  Hiroya Ohta ,  Osamu Kamimura

Inventor： Momoyo Enyama ,  Hiroya Ohta ,  Osamu Kamimura

IPC: H01J3/16

CPC classification number: H01J37/153 ,  H01J37/1472 ,  H01J2237/151 ,  H01J2237/1534

Abstract: With a multi-beam type charged particle beam apparatus, and a projection charged particle beam apparatus, in the case of off-axial aberration corrector, there is the need for preparing a multitude of multipoles, and power supply sources in numbers corresponding to the number of the multipoles need be prepared. In order to solve this problem as described, a charged particle beam apparatus is provided with at least one aberration corrector wherein the number of the multipoles required in the past is decreased by about a half by disposing an electrostatic mirror in an electron optical system.

Abstract translation: 使用多光束型带电粒子束装置和投影带电粒子束装置，在离轴像差校正器的情况下，需要准备多个多极，并且与数字对应的数量的电源 的多极需要准备。 为了解决上述问题，带电粒子束装置设置有至少一个像差校正器，其中通过在电子光学系统中设置静电镜，过去所需的多极数减少约一半。

公开(公告)号：US20080067376A1

公开(公告)日：2008-03-20

申请号：US11751094

申请日：2007-05-21

Applicant: Sayaka Tanimoto ,  Osamu Kamimura ,  Yasunari Sohda ,  Hiroya Ohta

Inventor： Sayaka Tanimoto ,  Osamu Kamimura ,  Yasunari Sohda ,  Hiroya Ohta

IPC: G21K7/00

CPC classification number: H01J37/153 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/1205 ,  H01J2237/1534 ,  H01J2237/1536 ,  H01J2237/2446 ,  H01J2237/2448 ,  H01J2237/24592 ,  H02N13/00

Abstract: This invention provides a charged particle beam apparatus that can makes reduction in off axis aberration and separate detection of secondary beams to be compatible. The charged particle beam apparatus has: an electron optics that forms a plurality of primary charged particle beams, projects them on a specimen, and makes them scan the specimen with a first deflector; a plurality of detectors that individually detect a plurality of secondary charged particle beams produced from the plurality of locations of the specimen by irradiation of the plurality of primary charged particle beams; and a voltage source for applying a voltage to the specimen. The charged particle beam apparatus further has: a Wien filter for separating paths of the primary charged particle beams and paths of the secondary charged particle beams; a second deflector for deflecting the secondary charged particle beams separated by the Wien filter; and control means for controlling the first deflector and the second deflector in synchronization, wherein the plurality of detectors detect the plurality of secondary charged particle beams separated by the Wien filter individually.

Abstract translation: 本发明提供了一种带电粒子束装置，其可以减少离轴像差和将次级束的分离检测兼容。 带电粒子束装置具有：形成多个初级带电粒子束的电子光学器件，将它们投射在样本上，并使它们用第一偏转器扫描样本; 多个检测器，通过多个初级带电粒子束的照射，分别检测从样本的多个位置产生的多个次级带电粒子束; 以及用于向样本施加电压的电压源。 带电粒子束装置还具有：维纳滤波器，用于分离初级带电粒子束的路径和二次带电粒子束的路径; 用于偏转由维恩滤波器分离的二次带电粒子束的第二偏转器; 以及用于同步地控制第一偏转器和第二偏转器的控制装置，其中多个检测器分别检测由维恩过滤器分离的多个次级带电粒子束。

公开(公告)号：US20110049344A1

公开(公告)日：2011-03-03

申请号：US12936030

申请日：2009-04-03

Applicant: Takashi Dobashi ,  Masanari Koguchi ,  Osamu Kamimura ,  Hiroya Ohta ,  Kazutoshi Gohara

Inventor： Takashi Dobashi ,  Masanari Koguchi ,  Osamu Kamimura ,  Hiroya Ohta ,  Kazutoshi Gohara

IPC: G01D18/00 ,  G01N23/00

CPC classification number: H01J37/222 ,  H01J37/26 ,  H01J37/295 ,  H01J2237/24578

Abstract: A charged particle beam microscope device of the present invention is configured such that in a diffraction pattern obtained by radiating a parallel charged particle beam onto a sample (22) having a known structure, a distance (r) between spots of a diffraction pattern, which reflects the structure of the sample, is measured, and the variation of a distance (L) between the sample and a detector, which depends on a diffraction angle (θ), is corrected. This enables the correction of distortion that varies with an off-axis distance from the optical axis in a diffraction pattern, and a high precision structural analysis by performing accurately analyzing the spot positions of the diffraction pattern.

Abstract translation: 本发明的带电粒子束显微镜装置被构造成使得在通过将平行带电粒子束照射到具有已知结构的样品（22）上获得的衍射图案中，衍射图案的点之间的距离（r） 反映样品的结构，被测量，并且校正取决于衍射角（＆amp; s）的样品和检测器之间的距离（L）的变化。 由此，能够通过对衍射图案的光斑位置进行精确的分析，能够进行与衍射图案中的离开光轴的离轴距离变化的畸变校正。

公开(公告)号：US07005659B2

公开(公告)日：2006-02-28

申请号：US10885666

申请日：2004-07-08

Applicant: Masato Muraki ,  Hiroya Ohta ,  Osamu Kamimura

Inventor： Masato Muraki ,  Hiroya Ohta ,  Osamu Kamimura

IPC: H01J3/26 ,  H01J37/28 ,  G21K5/10

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174

Abstract: A charged particle beam exposure apparatus has a beam shaping optical system which forms an image of a charged particle source that emits charged particle beams, an aperture array and electrostatic lens which form a plurality of images of the charged particle source from the image of the charged particle source, a reduction electron optical system which reduces and projects the plurality of images of the charged particle source onto a wafer, and the first stigmator which generates astigmatism when the beam shaping optical system forms the image of the charged particle source in order to correct astigmatism generated in the reduction electron optical system. A charged particle beam exposure method of exposing a substrate by scanning with charged particle beams includes an adjustment step of making the size in the scanning direction of charged particle beams on the substrate smaller than the size in a direction perpendicular to the direction.

Abstract translation: 带电粒子束曝光装置具有光束整形光学系统，其形成发射带电粒子束的带电粒子源的图像，孔径阵列和静电透镜，其从带电粒子源的图像形成带电粒子源的多个图像 粒子源，还原电子光学系统，其将带电粒子源的多个图像减少并投影到晶片上;以及当束整形光学系统形成带电粒子源的图像以产生像散的第一标示器，以便校正 在还原电子光学系统中产生散光。 通过用带电粒子束扫描使基板曝光的带电粒子束曝光方法包括使基板上的带电粒子束的扫描方向的尺寸小于垂直于该方向的方向上的尺寸的调整步骤。

公开(公告)号：US20050006601A1

公开(公告)日：2005-01-13

申请号：US10885666

申请日：2004-07-08

Applicant: Masato Muraki ,  Hiroya Ohta ,  Osamu Kamimura

Inventor： Masato Muraki ,  Hiroya Ohta ,  Osamu Kamimura

IPC: H01J37/153 ,  H01J37/317 ,  H01J3/26 ,  G21K5/10 ,  H01J37/08

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174

Abstract: A charged particle beam exposure apparatus has a beam shaping optical system which forms an image of a charged particle source that emits charged particle beams, an aperture array and electrostatic lens which form a plurality of images of the charged particle source from the image of the charged particle source, a reduction electron optical system which reduces and projects the plurality of images of the charged particle source onto a wafer, and the first stigmator which generates astigmatism when the beam shaping optical system forms the image of the charged particle source in order to correct astigmatism generated in the reduction electron optical system. A charged particle beam exposure method of exposing a substrate by scanning with charged particle beams includes an adjustment step of making the size in the scanning direction of charged particle beams on the substrate smaller than the size in a direction perpendicular to the direction.

Abstract translation: 带电粒子束曝光装置具有光束整形光学系统，其形成发射带电粒子束的带电粒子源的图像，孔径阵列和静电透镜，其从带电粒子源的图像形成带电粒子源的多个图像 粒子源，还原电子光学系统，其将带电粒子源的多个图像减少并投影到晶片上;以及当束整形光学系统形成带电粒子源的图像以产生像散的第一标示器，以便校正 在还原电子光学系统中产生散光。 通过用带电粒子束扫描使基板曝光的带电粒子束曝光方法包括使基板上的带电粒子束的扫描方向的尺寸小于垂直于该方向的方向上的尺寸的调整步骤。

公开(公告)号：US20100065753A1

公开(公告)日：2010-03-18

申请号：US12554577

申请日：2009-09-04

Applicant: Momoyo ENYAMA ,  Hiroya Ohta ,  Osamu Kamimura

Inventor： Momoyo ENYAMA ,  Hiroya Ohta ,  Osamu Kamimura

IPC: H01J3/16

CPC classification number: H01J37/153 ,  H01J37/1472 ,  H01J2237/151 ,  H01J2237/1534

Abstract: With a multi-beam type charged particle beam apparatus, and a projection charged particle beam apparatus, in the case of off-axial aberration corrector, there is the need for preparing a multitude of multipoles, and power supply sources in numbers corresponding to the number of the multipoles need be prepared. In order to solve this problem as described, a charged particle beam apparatus is provided with at least one aberration corrector wherein the number of the multipoles required in the past is decreased by about a half by disposing an electrostatic mirror in an electron optical system.

Abstract translation: 使用多光束型带电粒子束装置和投影带电粒子束装置，在离轴像差校正器的情况下，需要准备多个多极，并且与数字对应的数量的电源 的多极需要准备。 为了解决上述问题，带电粒子束装置设置有至少一个像差校正器，其中通过在电子光学系统中设置静电镜，过去所需的多极数减少约一半。

公开(公告)号：US06838682B2

公开(公告)日：2005-01-04

申请号：US10634878

申请日：2003-08-06

Applicant: Yasunari Sohda ,  Osamu Kamimura ,  Hiroya Ohta ,  Susumu Gotoh

Inventor： Yasunari Sohda ,  Osamu Kamimura ,  Hiroya Ohta ,  Susumu Gotoh

IPC: G03F7/20 ,  G03F9/02 ,  H01J37/04 ,  H01J37/141 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC classification number: H01J37/1471 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/1501

Abstract: There is provided an electron beam exposure technique which permits optical adjustment in an electron optics system using a doublet lens necessary for large field projection.Electron beam exposure equipment having a part forming one image by at least two electromagnetic lenses, has means measuring the position of an electron beam near an image plane with changing excitation of at least two lenses at the same time; and control means feeding back the measured result to aligners or the intensity of the lenses.

Abstract translation: 提供了一种使用电子光学系统进行光学调节的电子束曝光技术，该系统使用大场投影所需的双重透镜。具有通过至少两个电磁透镜形成一个图像的部分的电子束曝光设备具有测量位置 同时改变至少两个透镜的激发的图像平面附近的电子束; 并且控制装置将测量结果反馈到对准器或透镜的强度。

公开(公告)号：US08022365B2

公开(公告)日：2011-09-20

申请号：US12168940

申请日：2008-07-08

Applicant: Osamu Kamimura ,  Hiroya Ohta

Inventor： Osamu Kamimura ,  Hiroya Ohta

IPC: H01J37/28 ,  H01J3/26

CPC classification number: H01J37/295

Abstract: In an electron microscope to which a phase retrieval method is applied, an image size determined by a pixel size p of a diffraction pattern, a camera length L, and a wavelength λ of an illumination beam is allowed to have a certain relation with an illumination area on a specimen. Further, a beam illumination area or a scanning area of a deflector when a magnified image is observed is set by an illumination adjustment system, so that an image size when the magnified image is used for the phase retrieval method is allowed to have a certain relation with the image size determined by the pixel size of the diffraction pattern, the camera length, and the wavelength of the illumination beam. Accordingly, the information of the diffraction pattern is substantially equal to an object image to be reconstructed.

Abstract translation: 在应用了相位检索方法的电子显微镜中，允许由照射光束的衍射图案的像素尺寸p，照相机长度L和波长λ确定的图像尺寸与照明具有一定关系 标本上的区域。 此外，通过照明调整系统设定观察放大图像时的光束照明区域或偏转器的扫描区域，使得当使用放大图像进行相位检索方法时的图像尺寸被允许具有一定关系 其中图像尺寸由衍射图案的像素尺寸，相机长度和照明光束的波长确定。 因此，衍射图案的信息基本上等于要重构的对象图像。

公开(公告)号：US20090014651A1

公开(公告)日：2009-01-15

申请号：US12168940

申请日：2008-07-08

Applicant: Osamu Kamimura ,  Hiroya Ohta

Inventor： Osamu Kamimura ,  Hiroya Ohta

IPC: H01J37/28

CPC classification number: H01J37/295

Abstract: In an electron microscope to which a phase retrieval method is applied, an image size determined by a pixel size p of a diffraction pattern, a camera length L, and a wavelength λ of an illumination beam is allowed to have a certain relation with an illumination area on a specimen. Further, a beam illumination area or a scanning area of a deflector when a magnified image is observed is set by an illumination adjustment system, so that an image size when the magnified image is used for the phase retrieval method is allowed to have a certain relation with the image size determined by the pixel size of the diffraction pattern, the camera length, and the wavelength of the illumination beam. Accordingly, the information of the diffraction pattern is substantially equal to an object image to be reconstructed.

Abstract translation: 在应用了相位检索方法的电子显微镜中，由衍射图案的像素尺寸p，照相机长度L和照明光束的波长λ确定的图像尺寸被允许与照明具有一定关系 标本上的区域。 此外，通过照明调整系统设定观察放大图像时的光束照明区域或偏转器的扫描区域，使得当使用放大图像进行相位检索方法时的图像尺寸被允许具有一定关系 其中图像尺寸由衍射图案的像素尺寸，相机长度和照明光束的波长确定。 因此，衍射图案的信息基本上等于要重构的对象图像。

公开(公告)号：US07049607B2

公开(公告)日：2006-05-23

申请号：US10951769

申请日：2004-09-29

Applicant: Yasunari Sohda ,  Hiroya Ohta ,  Osamu Kamimura ,  Susumu Gotoh

Inventor： Yasunari Sohda ,  Hiroya Ohta ,  Osamu Kamimura ,  Susumu Gotoh

IPC: G01N23/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/3045

Abstract: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

Abstract translation: 电子束写入设备具有电子源和电子光学系统，用于通过具有至少两个不同偏转速度的偏转装置扫描从电子源在样品上发射的电子束。 使用物镜在样品上形成期望的图案电子束通过用偏转装置的高速扫描移动，以重复形成图案化的束。 电子束通过与偏转装置的低速扫描同步于重复的一个周期而在标记上移动以进行光束校正。 使用用于背散射或二次电子的检测器校正电子束的位置或偏转距离或消隐时间。