Abstract:
Implementations described herein disclose epitaxial deposition chambers and components thereof. In one implementation, a chamber can include a substrate support positioned in a processing region, a radiant energy assembly comprising a plurality of radiant energy sources, a liner assembly having an upper liner and a lower liner, and a dome assembly positioned between the substrate support and the radiant energy assembly. The epitaxial deposition chambers described herein allow for processing of larger substrates, while maintaining throughput, reducing costs and providing a reliably uniform deposition product.
Abstract:
A processing chamber is described. The processing chamber includes a chamber having an interior volume, a light pipe array coupled to the chamber, the light pipe array comprising a wall member that defines a boundary of the interior volume of the chamber, wherein the light pipe array includes a plurality of non-metallic light pipe structures, and a radiant heat source comprising a plurality of energy sources in optical communication with each of the plurality of light pipe structures.
Abstract:
A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.
Abstract:
Methods and apparatus for thermal processing of semiconductor substrates are described. A solid state radiant emitter is used to provide a field of thermal processing energy. A second solid state radiant emitter is used to provide a field of activating energy. The thermal processing energy and the activating energy are directed to a treatment zone of the substrate, where the activating energy increases absorption of the thermal processing radiation in the substrate, resulting in thermal processing of the substrate in the areas illuminated by the activating energy.
Abstract:
Embodiments of the present invention generally relate to methods and apparatus for monitoring substrate temperature uniformity in a processing chamber, such as an RTP chamber. Substrate temperature is monitored using an infrared camera coupled to a probe having a wide-angle lens. The wide-angle lens is positioned within the probe and secured using a spring, and is capable of withstanding high temperature processing. The wide angle lens facilities viewing of substantially the entire surface of the substrate in a single image. The image of the substrate can be compared to a reference image to facilitate lamp adjustments, if necessary, to effect uniform heating of the substrate.
Abstract:
The embodiments described herein generally relate to methods of noise compensation for proper temperature detection in thermal processing chambers and devices for achieving the same. Methods can include determining noise produced by a lamp zone and extrapolating the noise from the detected photocurrent. Devices can include a processing chamber, a substrate support disposed in the processing chamber, the substrate support having a high thermal mass, a pyrometer below the substrate support and oriented to view radiation emitted by the substrate and a controller configured to subtract a time invariant noise component and a time variant noise component from the pyrometer signal.
Abstract:
Embodiments described herein relate to apparatus and methods of thermal processing. More specifically, apparatus and methods described herein relate to laser thermal treatment of semiconductor substrates by increasing the uniformity of energy distribution in an image at a surface of a substrate.