公开(公告)号：US20220356197A1

公开(公告)日：2022-11-10

申请号：US17236020

申请日：2021-04-21

Applicant: Applied Materials, Inc.

Inventor： Chandan Kr Barik ,  John Sudijono ,  Chandan Das ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC: C07F11/00 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56 ,  C23C16/02 ,  C23C16/44

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20220325412A1

公开(公告)日：2022-10-13

申请号：US17848600

申请日：2022-06-24

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Thomas Knisley

IPC: C23C16/455 ,  C01B32/907 ,  C01B21/082 ,  C23C16/34 ,  C23C16/36 ,  C23C16/30 ,  C23C16/32

Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R9, R10, R11, R12 R13, R14, R15, and R16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

公开(公告)号：US11289328B2

公开(公告)日：2022-03-29

申请号：US16456978

申请日：2019-06-28

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Mark Saly ,  Lakmal C. Kalutarage ,  David Thompson

IPC: C23C16/56 ,  H01L21/02 ,  H01L21/311 ,  C23C16/455

Abstract: Chromium containing precursors and methods of forming chromium-containing thin films are described. The chromium precursor has a chromium-diazadiene bond or cyclopentadienyl ligand and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic chromium film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising chromium with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described. Methods of filling gaps in a substrate with a chromium-containing film are also described.

公开(公告)号：US11164745B2

公开(公告)日：2021-11-02

申请号：US16631983

申请日：2018-08-01

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Bhaskar Jyoti Bhuyan

IPC: H01L21/027 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/768

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.

公开(公告)号：US20210189562A1

公开(公告)日：2021-06-24

申请号：US17182906

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US11028480B2

公开(公告)日：2021-06-08

申请号：US16356700

申请日：2019-03-18

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Mark Saly ,  David Alexander Britz ,  David Thompson

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/30 ,  C23C16/56 ,  F01D5/28 ,  F01D9/02 ,  F01D25/12 ,  F01D25/14 ,  F01D25/28 ,  F23R3/28 ,  C07F11/00

Abstract: Methods for depositing protective coatings on aerospace components are provided and include sequentially exposing the aerospace component to a chromium precursor and a reactant to form a chromium-containing layer on a surface the aerospace component by an atomic layer deposition process. The chromium-containing layer contains metallic chromium, chromium oxide, chromium nitride, chromium carbide, chromium silicide, or any combination thereof.

公开(公告)号：US11028477B2

公开(公告)日：2021-06-08

申请号：US15297270

申请日：2016-10-19

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Keiichi Tanaka ,  Eswaranand Venkatasubramanian ,  Mandyam Sriram ,  Bhaskar Jyoti Bhuyan ,  Pramit Manna ,  David Thompson ,  Andrew Short

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/34 ,  H01L21/02 ,  C23C16/02 ,  C23C16/40 ,  H01L21/762

Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.

公开(公告)号：US20210062341A1

公开(公告)日：2021-03-04

申请号：US16550486

申请日：2019-08-26

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: C23C16/455 ,  C07F7/10 ,  C23C16/44

Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) or general formula (II) wherein X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor; exposing the substrate to an oxidant; and purging the processing chamber of the oxidant.

公开(公告)号：US20210050212A1

公开(公告)日：2021-02-18

申请号：US16989156

申请日：2020-08-10

Applicant: Applied Materials, Inc.

Inventor： William J. Durand ,  Mark Saly ,  Lakmal C. Kalutarage ,  Kang Sub Yim ,  Shaunak Mukherjee

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/683 ,  C23C16/50 ,  C23C16/24 ,  C23C16/34 ,  C23C16/32 ,  C23C16/40 ,  C23C16/36 ,  C23C16/30

Abstract: Methods for deposition of high-hardness low-κ dielectric films are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate, the precursor having the general formula (I) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), alkyl, alkoxy, vinyl, silane, amine, or halide; maintaining the substrate at a pressure in a range of about 0.1 mTorr and about 10 Torr and at a temperature in a range of about 200° C. to about 500° C.; and generating a plasma at a substrate level to deposit a dielectric film on the substrate.

公开(公告)号：US20210032749A1

公开(公告)日：2021-02-04

申请号：US16941843

申请日：2020-07-29

Applicant: Applied Materials, Inc.

Inventor： Cong Trinh ,  Mihaela A. Balseanu ,  Maribel Maldonado-Garcia ,  Ning Li ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Keenan N. Woods ,  Lisa J. Enman

IPC: C23C16/455 ,  C23C16/02

Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.