公开(公告)号：US09397285B2

公开(公告)日：2016-07-19

申请号：US14395626

申请日：2013-04-19

Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

Inventor： Sebastian Thimotee Bartsch ,  Mihai Adrian Ionescu

IPC: H01L41/09 ,  H01L41/113 ,  H01H59/00 ,  B82Y15/00 ,  H03H9/02 ,  H03H9/24 ,  B81B3/00

CPC classification number: H01L41/0966 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B82Y15/00 ,  H01H59/0009 ,  H01L41/0933 ,  H01L41/1134 ,  H03H9/02259 ,  H03H9/24 ,  H03H9/2463 ,  H03H2009/02314

Abstract: A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed gate electrode arranged to control a depletion charge in the highly doped conductive channel thereby modulating dimensions of a cross-section of the highly doped conductive channel. A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode to the highly doped conductive channel, is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel is achievable with the control of the fixed gate electrode.

Abstract translation: 一种无连接纳米机电（NEM）谐振器，包括连接漏极区域和源极区域的高度掺杂的导电沟道; 导电沟道区域是可移动的，并且整个结构至少固定在放置在源极和漏极区域上的这两个端点处; 至少一个固定栅极布置成控制高掺杂导电沟道中的耗尽电荷，从而调制高度掺杂的导电沟道的横截面的尺寸。 在从固定栅电极到高度掺杂的导电沟道取向的电场方向上的横截面的尺寸被设计成使得其可以在耗尽电荷的作用下减小，使得 通过固定栅电极的控制可以实现高掺杂导电沟道中的全部耗尽。

公开(公告)号：US20160200566A1

公开(公告)日：2016-07-14

申请号：US14403571

申请日：2013-06-28

Applicant: INTEL IP CORPORATION

Inventor： Gerald Ofner ,  Thorsten Meyer ,  Reinhard Mahnkopf ,  Christian Geissler ,  Andreas Augustin

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00238 ,  B81B7/008 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/10 ,  B81B2207/012 ,  B81B2207/053 ,  B81B2207/07 ,  B81B2207/096 ,  B81C1/0023 ,  B81C2203/0792 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2924/15311 ,  H01L2924/00014

Abstract: In embodiments, a package assembly may include an application-specific integrated circuit (ASIC) and a microelectromechanical system (MEMS) having an active side and an inactive side. In embodiments, the MEMS may be coupled directly to the ASIC by way of one or more interconnects. The MEMS, ASIC, and one or more interconnects may define or form a cavity such that the active portion of the MEMS is within the cavity. In some embodiments, the package assembly may include a plurality of MEMS coupled directly to the ASIC by way of a plurality of one or more interconnects. Other embodiments may be described and/or claimed.

Abstract translation: 在实施例中，封装组件可以包括专用集成电路（ASIC）和具有有源侧和无源侧的微机电系统（MEMS）。 在实施例中，MEMS可以通过一个或多个互连直接耦合到ASIC。 MEMS，ASIC和一个或多个互连可以限定或形成空腔，使得MEMS的有源部分在空腔内。 在一些实施例中，封装组件可以包括通过多个一个或多个互连件直接耦合到ASIC的多个MEMS。 可以描述和/或要求保护其他实施例。

公开(公告)号：US09238576B2

公开(公告)日：2016-01-19

申请号：US14149833

申请日：2014-01-08

Applicant: Industrial Technology Research Institute

Inventor： Chung-Yuan Su ,  Chao-Ta Huang ,  Tzung-Ching Lee ,  Yu-Wen Hsu

IPC: G01P15/097 ,  B81B3/00 ,  H03H3/007

CPC classification number: B81B3/0008 ,  B81B2201/0271 ,  G01P15/097 ,  H03H3/0072

Abstract: A MEMS apparatus comprising composite vibrating unit and the manufacturing method thereof are disclosed. The vibrating unit includes a stiffness element on which a first material is disposed. A second material being a conductive material is disposed on the first material and is extended to the stiffness element to remove electric charge on first material. When a temperature is changed, a variation direction of a Young's modulus of the first material is opposite to a variation direction of a Young's modulus of the stiffness element. The unique attributes above allow vibrating unit of the MEMS apparatus such as resonator and gyroscope to have stable resonance frequency against the change of temperature.

Abstract translation: 公开了一种包括复合振动单元的MEMS装置及其制造方法。 所述振动单元包括其上设置有第一材料的刚度元件。 作为导电材料的第二材料设置在第一材料上并延伸到刚度元件以去除第一材料上的电荷。 当温度变化时，第一材料的杨氏模量的变化方向与刚度元件的杨氏模量的变化方向相反。 上述独特的属性允许诸如谐振器和陀螺仪之类的MEMS装置的振动单元相对于温度变化具有稳定的共振频率。

公开(公告)号：US09209778B2

公开(公告)日：2015-12-08

申请号：US13834486

申请日：2013-03-15

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Mirko Vogt ,  Maik Stegemann ,  Thomas Santa ,  Markus Burian

IPC: H03H9/24 ,  H03H9/02 ,  B81B3/00 ,  B81C1/00 ,  H03H3/007

CPC classification number: H03H9/2452 ,  B81B3/0078 ,  B81B2201/0271 ,  B81C1/00158 ,  B81C1/00246 ,  B81C1/00301 ,  B81C1/00396 ,  B81C2203/0145 ,  H03H3/0072 ,  H03H3/0073 ,  H03H9/02259 ,  H03H9/2463 ,  H03H2009/02291 ,  H03H2009/02307 ,  H03H2009/0233 ,  H03H2009/02496

Abstract: Embodiments relate to MEMS resonator structures and methods that enable application of a maximum available on-chip voltage. In an embodiment, a MEMS resonator comprises a connection between a ground potential and the gap electrode of the resonator. Embodiments also relate to manufacturing systems and methods that are less complex and enable production of MEMS resonators of reduced dimensions.

Abstract translation: 实施例涉及能够应用最大可用片上电压的MEMS谐振器结构和方法。 在一个实施例中，MEMS谐振器包括接地电位和谐振器的间隙电极之间的连接。 实施例还涉及不太复杂的制造系统和方法，并且能够制造尺寸减小的MEMS谐振器。

公开(公告)号：US20150284239A1

公开(公告)日：2015-10-08

申请号：US14172894

申请日：2014-02-04

Applicant: INVENSENSE, INC.

Inventor： KIRT REED WILLIAMS ,  MATTHEW JULIAN THOMPSON ,  JOSEPH SEEGER

IPC: B81B3/00 ,  G01P15/125 ,  B81C1/00 ,  G01N3/20

CPC classification number: B81B3/0051 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81C1/00666 ,  G01K1/00 ,  G01N3/20 ,  G01P15/125 ,  G01P2015/0828

Abstract: A method and system for a MEMS device is disclosed. The MEMS device includes a free layer, with a first portion and a second portion. The MEMS device also includes a underlying substrate, the free layer movably positioned relative to the underlying substrate. The first portion and second portion of the free layer are coupled through at least one stem. A sense material is disposed over portions of the second portion of the free layer. Stress in the sense material and second portion of the free layer does not cause substantial deflection of the first portion.

Abstract translation: 公开了一种用于MEMS器件的方法和系统。 MEMS器件包括具有第一部分和第二部分的自由层。 MEMS器件还包括下面的衬底，自由层相对于下面的衬底可移动地定位。 自由层的第一部分和第二部分通过至少一个杆连接。 感测材料设置在自由层的第二部分的部分上。 感应材料和自由层的第二部分的应力不会引起第一部分的实质的偏转。

公开(公告)号：US20150266725A1

公开(公告)日：2015-09-24

申请号：US14733926

申请日：2015-06-08

Applicant: Rajashree Baskaran

Inventor： Rajashree Baskaran

IPC: B81C1/00

CPC classification number: B81C1/00238 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2207/012 ,  B81C1/00015 ,  B81C2203/0118 ,  B81C2203/0136 ,  B81C2203/035 ,  B81C2203/036 ,  B81C2203/0792 ,  H01L23/315 ,  H01L2224/16 ,  H01L2924/00 ,  H01L2924/0002

Abstract: Methods of forming integrated MEMS structures are described. Those methods and structures may include forming at least one MEMS structure on a first substrate, forming a first bonding layer on a top surface of the first substrate, and then coupling the first bonding layer disposed on the first substrate to a second substrate, wherein the second substrate comprises a device layer. The bonding may comprise a layer transfer process, wherein an integrated MEMS device is formed.

Abstract translation: 描述了形成集成MEMS结构的方法。 这些方法和结构可以包括在第一衬底上形成至少一个MEMS结构，在第一衬底的顶表面上形成第一结合层，然后将设置在第一衬底上的第一结合层耦合到第二衬底，其中 第二衬底包括器件层。 接合可以包括层转移工艺，其中形成集成的MEMS器件。

公开(公告)号：US09117593B2

公开(公告)日：2015-08-25

申请号：US14071173

申请日：2013-11-04

Applicant: RF Micro Devices, Inc.

Inventor： Kushal Bhattacharjee

IPC: H03H9/46 ,  H03H9/54 ,  H01G5/18 ,  H03H9/02 ,  H03H9/24 ,  B81B3/00

CPC classification number: H01G5/18 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2201/0271 ,  B81B2201/032 ,  H03H9/02275 ,  H03H9/02409 ,  H03H9/2405 ,  H03H9/2463 ,  H03H9/462 ,  H03H9/467 ,  H03H2009/241

Abstract: A MEMS device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. Notably, the piezoelectric layer is a bimorph including a first bimorph layer and a second bimorph layer. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with the first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the substrate, such that the second electrode is in contact with the second bimorph layer of the piezoelectric layer. The second electrode may include a first conducting section and a second conducting section, which are inter-digitally dispersed on the second surface.

Abstract translation: MEMS器件包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。 值得注意的是，压电层是包括第一双晶片层和第二双晶片层的双晶片。 第一电极可以设置在面对基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。 第二电极可以设置在与衬底相对的压电层的第二表面上，使得第二电极与压电层的第二双压电晶片层接触。 第二电极可以包括第一导电部分和第二导电部分，其在数字上分散在第二表面上。

公开(公告)号：US09084067B2

公开(公告)日：2015-07-14

申请号：US13689199

申请日：2012-11-29

Applicant: Yokogawa Electric Corporation

Inventor： Ryuichiro Noda ,  Takashi Yoshida

IPC: H01L41/22 ,  H04R31/00 ,  B81C1/00 ,  H03H3/007

CPC classification number: H04R31/00 ,  B81B2201/0271 ,  B81C1/0015 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0173 ,  H03H3/0072 ,  Y10T29/49005

Abstract: A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.

Abstract translation: 一种制造具有振动束的谐振换能器的方法包括：（a）提供SOI衬底，包括：第一硅层; 第一硅层上的氧化硅层; 和在氧化硅层上的第二硅层; （b）通过使用氧化硅层作为蚀刻停止层蚀刻第二硅层，形成通过第二硅层的第一间隙和第二间隙; （c）在第二硅层上形成杂质扩散源层; （d）在第二硅层的表面部分形成杂质扩散层; （e）通过蚀刻去除杂质扩散源层; 以及（f）通过蚀刻去除所述氧化硅层的至少一部分，使得在所述第一硅层和由所述第一和第二间隙包围的所述第二硅层的区域之间形成气隙。

公开(公告)号：US09051170B2

公开(公告)日：2015-06-09

申请号：US13459271

申请日：2012-04-30

Applicant: Chao-Ta Huang ,  Yu-Wen Hsu ,  Chin-Fu Kuo

Inventor： Chao-Ta Huang ,  Yu-Wen Hsu ,  Chin-Fu Kuo

IPC: G01P15/08 ,  H01L21/76 ,  B81B7/00 ,  G01R33/028

CPC classification number: B81B7/0006 ,  B81B2201/0271 ,  B81B2201/042 ,  B81B2203/0109 ,  B81B2203/0154 ,  B81B2203/058 ,  G01R33/0286

Abstract: A microelectromechanical system device including anchors and mass is provided. Electrical interconnections are formed on the mass by using a insulation layer of mass, an electrical insulation trench and conductive through hole. The electrical interconnections replace the cross-line structure without adding additional processing steps, thereby reducing the use of the conductive layer and the electrical insulation layer. A method for fabricating the microelectromechanical system device is also provided.

Abstract translation: 提供了包括锚和质量的微机电系统装置。 通过使用质量绝缘层，电绝缘沟槽和导电通孔在质量上形成电互连。 电互连替代了交叉线结构，而不增加额外的处理步骤，从而减少了导电层和电绝缘层的使用。 还提供了一种用于制造微机电系统装置的方法。

公开(公告)号：US20150048903A1

公开(公告)日：2015-02-19

申请号：US13970209

申请日：2013-08-19

Applicant: HARRIS CORPORATION

Inventor： JOHN E. ROGERS

IPC: H03H9/46

CPC classification number: H03H9/462 ,  B81B7/0016 ,  B81B2201/0271 ,  H01G5/16 ,  H01G5/40 ,  H03H9/525 ,  Y10T29/4913

Abstract: Integrated Microelectromechanical System (“MEMS”) devices and methods for making the same. The MEMS devices comprise a substrate (200) and a MEMS filter device (100) mechanically suspended above a major surface of the substrate. A first gas gap (202) exists between the major surface of the substrate and the MEMS filter device. An isolation platform (500) is provided to absorb vibrations from an external environment prior to reaching the MEMS filter device. In this regard, the isolation platform comprises: a frame structure (510) framing a periphery of the MEMS filter device; and at least one resilient component (512-518) coupled between the frame structure and the MEMS filter device. The frame structure is mechanically connected to the substrate. Electronic circuitry is connected to the MEMS filter device via a resilient interconnection (204, 206) that is movable in at least one direction of the vibrations.

Abstract translation: 集成微机电系统（“MEMS”）器件及其制造方法。 MEMS器件包括机械悬浮在衬底的主表面上方的衬底（200）和MEMS过滤器装置（100）。 在衬底的主表面和MEMS过滤器装置之间存在第一气隙（202）。 提供隔离平台（500）以在到达MEMS滤波器装置之前吸收来自外部环境的振动。 在这方面，隔离平台包括：框架结构（510），框架MEMS滤波器装置的外围; 以及耦合在所述框架结构和所述MEMS滤波器装置之间的至少一个弹性部件（512-518）。 框架结构机械连接到基板。 电子电路通过可在振动的至少一个方向上移动的弹性互连（204,206）连接到MEMS滤波器装置。