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    Reducing the actuation voltage of microelectromechanical system switches
    42.
    发明申请
    Reducing the actuation voltage of microelectromechanical system switches 有权
    降低微机电系统开关的启动电压

    公开(公告)号：US20040000696A1

    公开(公告)日：2004-01-01

    申请号：US10185283

    申请日：2002-06-28

    Inventor： Qing Ma ,  Tsung-Kuan Allen Chou ,  Valluri Rao

    IPC: H01L021/00 ,  H01L029/82

    CPC classification number: H01H59/0009 ,  B81B3/007 ,  B81B2201/014 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C2201/056 ,  H01H1/20 ,  H01H2001/0084 ,  H01H2059/0036 ,  H01H2059/0063

    Abstract: A microelectromechanical system switch may include a relatively stiff cantilevered beam coupled, on its free end, to a more compliant or flexible extension. A contact may be positioned at the free end of the cantilevered beam. The extension reduces the actuation voltage that is needed and compensates for the relative stiffness of the cantilevered beam in closing the switch. In opening the switch, the stiffness of the cantilevered beam may advantageously enable quicker operation which may be desirable in higher frequency situations.

    Abstract translation: 微机电系统开关可以包括在其自由端上耦合到更顺从或柔性延伸部的相对刚性的悬臂梁。 触点可以位于悬臂梁的自由端。 该延伸部分减小了所需的致动电压，并补偿了关闭开关时悬臂梁的相对刚度。 在打开开关时，悬臂梁的刚度可以有利地实现更快的操作，这在更高的频率情况下是可取的。

    Nucleation control of diamond films by microlithographic patterning
    44.
    发明授权
    Nucleation control of diamond films by microlithographic patterning 失效
    通过微光刻图案对金刚石膜的成核控制

    公开(公告)号：US5242711A

    公开(公告)日：1993-09-07

    申请号：US746458

    申请日：1991-08-16

    Applicant: Jeffrey D. DeNatale ,  John F. Flintoff ,  Alan B. Harker ,  Patrick J. Hood ,  Gerald D. Robinson

    Inventor： Jeffrey D. DeNatale ,  John F. Flintoff ,  Alan B. Harker ,  Patrick J. Hood ,  Gerald D. Robinson

    IPC: B81B3/00 ,  B81C99/00 ,  C23C16/02 ,  C23C16/27 ,  G02B1/11 ,  G03F7/00

    CPC classification number: G02B1/118 ,  B81C1/00111 ,  B81C1/00198 ,  B81C1/0038 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/274 ,  C23C16/277 ,  G03F7/00 ,  B81B2201/035 ,  B81B2201/047 ,  B81C2201/0191 ,  B81C2201/056 ,  Y10T428/30

    Abstract: A high temperature resist process is combined with microlithographic patterning for the production of materials, such as diamond films, that require a high temperature deposition environment. A conventional polymeric resist process may be used to deposit a pattern of high temperature resist material. With the high temperature resist in place and the polymeric resist removed, a high temperature deposition process may proceed without degradation of the resist pattern. After a desired film of material has been deposited, the high temperature resist is removed to leave the film in the pattern defined by the resist. For diamond films, a high temperature silicon nitride resist can be used for microlithographic patterning of a silicon substrate to provide a uniform distribution of diamond nucleation sites and to improve diamond film adhesion to the substrate. A fine-grained nucleation geometry, established at the nucleation sites, is maintained as the diamond film is deposited over the entire substrate after the silicon nitride resist is removed. The process can be extended to form microstructures of fine-grained polycrystalline diamond, such as rotatable microgears and surface relief patterns, that have the desirable characteristics of hardness, wear resistance, thermal conductivity, chemical inertness, anti-reflectance, and a low coefficient of friction.

    Abstract translation: 将高温抗蚀剂工艺与用于生产需要高温沉积环境的材料（例如金刚石膜）的微光刻图案组合。 传统的聚合物抗蚀剂工艺可用于沉积耐高温材料的图案。 通过将高温抗蚀剂置于适当位置并除去聚合物抗蚀剂，可以进行高温沉积工艺而不降解抗蚀剂图案。 在已经沉积所需的材料膜之后，去除高温抗蚀剂以使膜以由抗蚀剂限定的图案离开。 对于金刚石膜，可以使用高温氮化硅抗蚀剂用于硅衬底的微光刻图案以提供金刚石成核位点的均匀分布并且改善金刚石膜对衬底的粘附。 在去除氮化硅抗蚀剂之后，在整个衬底上沉积金刚石膜，保持在成核位置建立的细晶粒成核几何形状。 该方法可以扩展以形成具有期望的硬度，耐磨性，导热性，化学惰性，抗反射性和低系数的细晶粒多晶金刚石的微观结构，例如可旋转的微观尺寸和表面浮雕图案 摩擦。

    STRUCTURE FOR DEVICE WITH INTEGRATED MICROELECTROMECHANICAL SYSTEMS
    48.
    发明申请
    STRUCTURE FOR DEVICE WITH INTEGRATED MICROELECTROMECHANICAL SYSTEMS 审中-公开

    公开(公告)号：US20170253478A1

    公开(公告)日：2017-09-07

    申请号：US15449649

    申请日：2017-03-03

    Applicant: Soitec

    Inventor： Bruno Ghyselen

    IPC: B81C1/00 ,  B81B7/00

    CPC classification number: B81C1/00801 ,  B81B7/0025 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C1/00182 ,  B81C1/00626 ,  B81C2201/056

    Abstract: A method for manufacturing a structure comprises a) providing a donor substrate comprising front and rear faces; b) providing a support substrate; c) forming an intermediate layer on the front face of the donor substrate or on the support substrate; d) assembling the donor and support substrates with the intermediate layer therebetween; e) thinning the rear face of the donor substrate to form a useful layer of a useful thickness having a first face disposed on the intermediate layer and a second free face; and wherein the donor substrate comprises a buried stop layer and a fine active layer having a first thickness less than the useful thickness, between the front face of the donor substrate and the stop layer; and after step e), removing, in first regions of the structure, a thick active layer delimited by the second free face of the useful layer and the stop layer.

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