公开(公告)号：US07446320B1

公开(公告)日：2008-11-04

申请号：US11260586

申请日：2005-10-26

Applicant: Mark A. McCord ,  Kirk J. Bertsche ,  Francisco Machuca

Inventor： Mark A. McCord ,  Kirk J. Bertsche ,  Francisco Machuca

IPC: H01J37/12 ,  H01J42/22

CPC classification number: H01J37/12 ,  H01J37/145 ,  H01J37/21 ,  H01J37/28 ,  H01J2237/1035 ,  H01J2237/281

Abstract: One embodiment relates to an electronically-variable electrostatic immersion lens in an electron beam apparatus. The electrostatic immersion lens includes a top electrode configured with a first voltage applied thereto, an upper bottom electrode configured with a second voltage applied thereto, and a lower bottom electrode configured with a third voltage applied thereto. The third voltage is controlled separately from the second voltage. Other embodiments are also disclosed.

Abstract translation: 一个实施例涉及电子束装置中的电子可变静电浸没透镜。 静电浸没透镜包括配置有施加到其上的第一电压的上电极，施加有第二电压的上底电极，以及施加有第三电压的下底电极。 第三电压与第二电压分开控制。 还公开了其他实施例。

公开(公告)号：US06924494B2

公开(公告)日：2005-08-02

申请号：US10861876

申请日：2004-06-03

Applicant: Lee H. Veneklasen ,  William J. DeVore

Inventor： Lee H. Veneklasen ,  William J. DeVore

IPC: G03F7/20 ,  G01Q30/18 ,  H01J37/141 ,  H01J37/305 ,  H01L21/027

CPC classification number: H01J37/141 ,  H01J2237/1035 ,  H01J2237/3175

Abstract: An immersion lens for a charged particle beam lithography system includes a magnetically floating shield that limits a deflection magnetic field from creating eddy currents in electrically conductive components of the system downstream from the shield. The surface of the shield lies parallel or approximately parallel to a magnetic equipotential surface of the focusing magnetic field so that the shield does not affect the focusing magnetic field. The shield is, e.g., a ferrite disk or a hollow ferrite cone defining a central bore for passage of the charged particle beam.

Abstract translation: 用于带电粒子束光刻系统的浸没透镜包括磁浮屏蔽，其限制偏转磁场在屏蔽体下游的系统的导电部件中产生涡流。 屏蔽表面平行或近似平行于聚焦磁场的磁等势面，使屏蔽不影响聚焦磁场。 屏蔽是例如铁氧体磁盘或中空铁素体磁体，限定用于带电粒子束通过的中心孔。

公开(公告)号：US06664544B1

公开(公告)日：2003-12-16

申请号：US09936875

申请日：2001-11-13

Applicant: Takao Marui ,  Ranjan Krishnachandra Badheka ,  Frank Henry Read

Inventor： Takao Marui ,  Ranjan Krishnachandra Badheka ,  Frank Henry Read

IPC: H01J320

CPC classification number: H01J37/244 ,  H01J37/141 ,  H01J2237/1035

Abstract: A magnetic immersion lens has inner and outer pole-pieces arranged symmetrically about a longitudinal axis X-X of the lens, the inner pole piece having a through-bore and the lens producing a magnetic imaging field for directing along the through-bore secondary electrons emitted from a specimen positioned in front of the inner pole-piece. The lens has an axially-symmetric detection arrangement located within the through-bore. The detector comprises a focusser electrode, a repeller electrode, an extractor electrode, a detector electrode, and a reflector electrode

Abstract translation: 磁浸透镜具有围绕透镜的纵向轴线XX对称地布置的内极和外极，内极片具有通孔，并且透镜产生磁成像场，用于引导沿着从 位于内极片前方的试样。 透镜具有位于通孔内的轴对称检测装置。 检测器包括聚光器电极，推斥极，提取电极，检测器电极和反射器电极

公开(公告)号：US06410923B1

公开(公告)日：2002-06-25

申请号：US09550945

申请日：2000-04-17

Applicant: Albert V. Crewe

Inventor： Albert V. Crewe

IPC: H01J37143

CPC classification number: H01J37/1416 ,  H01J2237/1035 ,  H01J2237/28

Abstract: Disclosed are lens apparatus in which a beam of charged particles is brought to a focus by means of a magnetic field, the lens being situated behind the target position. In illustrative embodiments, a lens apparatus is employed in a scanning electron microscope as the sole lens for high-resolution focusing of an electron beam, and in particular, an electron beam having an accelerating voltage of from about 10 to about 30,000 V. In one embodiment, the lens apparatus comprises an electrically-conducting coil arranged around the axis of the beam and a magnetic pole piece extending along the axis of the beam at least within the space surrounded by the coil. In other embodiments, the lens apparatus comprises a magnetic dipole or virtual magnetic monopole fabricated from a variety of materials, including permanent magnets, superconducting coils, and magnetizable spheres and needles contained within an energy-conducting coil. Multiple-array lens apparatus are also disclosed for simultaneous and/or consecutive imaging of multiple images on single or multiple specimens. The invention further provides apparatus, methods, and devices useful in focusing charged particle beams for lithographic processes.

Abstract translation: 公开了透镜装置，其中通过磁场使带电粒子束聚焦，透镜位于目标位置之后。 在示例性实施例中，在扫描电子显微镜中采用透镜装置作为用于电子束的高分辨率聚焦的唯一透镜，特别是具有约10至约30,000V的加速电压的电子束。在一个 透镜设备包括围绕光束的轴线布置的导电线圈和至少在由线圈包围的空间内沿着光束的轴线延伸的磁极片。 在其他实施例中，透镜装置包括由各种材料制成的磁偶极子或虚拟磁单极子，包括永磁体，超导线圈和可磁化球体以及包含在能量传导线圈内的针。 还公开了多阵列透镜装置，用于在单个或多个标本上同时和/或连续成像多个图像。 本发明还提供了用于聚焦用于光刻工艺的带电粒子束的装置，方法和装置。

公开(公告)号：US6051839A

公开(公告)日：2000-04-18

申请号：US973706

申请日：1998-03-09

Applicant: Albert V. Crewe

Inventor： Albert V. Crewe

IPC: G01Q10/00 ,  G01Q30/02 ,  H01J37/141

CPC classification number: H01J37/1416 ,  H01J2237/1035 ,  H01J2237/28

Abstract: Disclosed are lens apparatus in which a beam of charged particlesis brought to a focus by means of a magnetic field, the lens being situated behind the target position. In illustrative embodiments, a lens apparatus is employed in a scanning electron microscopeas the sole lens for high-resolution focusing of an electron beam, and in particular, an electron beam having an accelerating voltage of from about 10 to about 30,000 V. In one embodiment, the lens apparatus comprises an electrically-conducting coil arranged around the axis of the beam and a magnetic pole piece extending along the axis of the beam at least within the space surrounded by the coil. In other embodiments, the lens apparatus comprises a magnetic dipole or virtual magnetic monopole fabricated from a variety of materials, including permanent magnets, superconducting coils, and magnetizable spheres and needles contained within an energy-conducting coil. Multiple-array lens apparatus are also disclosed for simultaneous and/or consecutive imaging of multiple images on single or multiple specimens. The invention further provides apparatus, methods, and devices useful in focusing charged particle beams for lithographic processes.

Abstract translation: PCT No.PCT / US96 / 09906 Sec。 371日期1998年3月9日 102（e）1998年3月9日PCT PCT 1996年7月6日PCT公布。 公开号WO96 / 41362 日期1996年12月19日公开的是透镜装置，其中带电粒子束通过磁场被聚焦，透镜位于目标位置之后。 在说明性实施例中，在扫描电子显微镜中使用透镜装置用于电子束的高分辨率聚焦的唯一透镜，特别是具有约10至约30,000V的加速电压的电子束。在一个实施例中 透镜装置包括围绕光束的轴线布置的导电线圈和至少在由线圈包围的空间内沿着光束的轴线延伸的磁极片。 在其他实施例中，透镜装置包括由各种材料制成的磁偶极子或虚拟磁单极子，包括永磁体，超导线圈和可磁化球体以及包含在能量传导线圈内的针。 还公开了多阵列透镜装置，用于在单个或多个标本上同时和/或连续成像多个图像。 本发明还提供了用于聚焦用于光刻工艺的带电粒子束的装置，方法和装置。

公开(公告)号：US6037589A

公开(公告)日：2000-03-14

申请号：US8161

申请日：1998-01-16

Applicant: Akira Yonezawa ,  Mitsuyoshi Sato ,  Osamu Takaoka

Inventor： Akira Yonezawa ,  Mitsuyoshi Sato ,  Osamu Takaoka

IPC: H01J37/145 ,  H01J37/244

CPC classification number: H01J37/145 ,  H01J2237/0475 ,  H01J2237/1035 ,  H01J2237/1534 ,  H01J2237/28

Abstract: An high resolution electron beam observation instrument has an electron beam source, an electron beam optical system for converging the electron beam and scanning the electron beam across the surface of a sample, and a compound magnetic and electrostatic objective lens comprising a single pole magnetic lens having a single magnetic pole portion disposed between the electron beam source and the sample and an electrostatic immersion lens, the electrostatic immersion lens comprising an upper electrode and a lower electrode, one end of the upper electrode extending between the single magnetic pole portion and the sample, and the lower electrode being disposed between the upper electrode and the sample; wherein a deceleration electric field is generated between the upper electrode and the lower electrode to allow high resolution observation of the sample. The upper electrode may comprise the single magnetic pole portion of the single pole magnetic lens, or one or more seperate electrodes. The single pole magnetic lens has a conical shaped portion extending between the single magnetic pole portion and the electron beam source. A potential applied to the sample differs from a potential applied to the lower electrode when the sample is not inclined and a difference between the potentials of the sample and the lower electrode is reduced, or the potentials are made equal to each other when the sample is inclined by the sample inclining means.

Abstract translation: 高分辨率电子束观察仪器具有电子束源，用于会聚电子束并扫描电子束穿过样品表面的电子束光学系统，以及包括单极磁性透镜的复合磁静电物镜，其具有 设置在电子束源和样品之间的单个磁极部分和静电浸没透镜，静电浸没透镜包括上电极和下电极，上电极的一端在单磁极部分和样品之间延伸， 并且所述下电极设置在所述上​​电极和所述样品之间; 其中在上电极和下电极之间产生减速电场，以允许样品的高分辨率观察。 上电极可以包括单极磁性透镜的单个磁极部分或一个或多个单独的电极。 单极磁性透镜具有在单个磁极部分和电子束源之间延伸的锥形部分。 当样品不倾斜并且样品和下电极的电位之间的差减小时，施加到样品的电位与施加到下电极的电位不同，或者当样品是相同时，电位彼此相等 由样品倾斜装置倾斜。

公开(公告)号：US4818885A

公开(公告)日：1989-04-04

申请号：US68602

申请日：1987-06-30

Applicant: Donald E. Davis ,  Samuel K. Doran ,  Merlyn H. Perkins ,  Hans C. Pfeiffer

Inventor： Donald E. Davis ,  Samuel K. Doran ,  Merlyn H. Perkins ,  Hans C. Pfeiffer

IPC: G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/1035 ,  H01J2237/30438 ,  H01J2237/31764 ,  H01J2237/31766 ,  H01J2237/31776

Abstract: This system employs writing of lithographic patterns with a shaped electron beam exposure system which minimizes the time wasted by workpiece positional requirements. The writing field contains an array of sub-fields written in a raster sequence. The large width of the writing field provided by the VAIL system reduces the number of mechanical scans required to write the pattern on the workpiece which further reduces the time required for workpiece positioning. When patterns are being superimposed over previously written patterns, registration is employed. This system includes a registration field confined to local areas on the workpiece, which is larger than the writing field, without requiring change in focus and without requiring the mechanical system comprising the X-Y work table to change speed during the registration and reregistration of the various fields on a semiconductor wafer or mask. The registration field can be larger than the writing field is possible because the quality requirements demanded from the shaped electron beam are less for detecting the locations of such registration marks at the various locations on the wafer.