公开(公告)号：US20140034846A1

公开(公告)日：2014-02-06

申请号：US13566013

申请日：2012-08-03

Applicant: William D. Lee ,  William P. Reynolds ,  Stanley W. Stone

Inventor： William D. Lee ,  William P. Reynolds ,  Stanley W. Stone

IPC: G21K5/08

CPC classification number: H01J37/18 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/2007 ,  H01J2237/201 ,  H01J2237/204 ,  H01J2237/31705 ,  H01L21/02002 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/67213 ,  H01L21/67742 ,  H01L21/67766

Abstract: An ion implantation system provides ions to a workpiece positioned in a vacuum environment of a process chamber on a cooled chuck. A pre-chill station within the process chamber has a chilled workpiece support configured to cool the workpiece to a first temperature, and a post-heat station within the process chamber, has a heated workpiece support configured to heat the workpiece to a second temperature. The first temperature is lower than a process temperature, and the second temperature is greater than an external temperature. A workpiece transfer arm is further configured to concurrently transfer two or more workpieces between two or more of the chuck, a load lock chamber, the pre-chill station, and the post-heat station.

Abstract translation: 离子注入系统向位于冷却卡盘上的处理室的真空环境中的工件提供离子。 处理室内的预冷站具有构造成将工件冷却到第一温度的冷冻工件支撑件，并且处理室内的后加热站具有被配置为将工件加热到第二温度的加热工件支撑件。 第一温度低于处理温度，第二温度大于外部温度。 工件传送臂还被构造成在卡盘，加载锁定室，预冷站和后加热站之间的两个或更多个之间同时传送两个或更多个工件。

公开(公告)号：US20140004706A1

公开(公告)日：2014-01-02

申请号：US13928645

申请日：2013-06-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Go MIYA ,  Masaru IZAWA ,  Takumi TANDOU

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/67069 ,  H01J37/32724 ,  H01J37/32825 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67109

Abstract: Provided is a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. Openings of the upstream-side expansion valves and openings of the downstream-side expansion valves are adjusted so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein.

Abstract translation: 提供了一种等离子体处理装置，其包括多个上游侧膨胀阀和连接到各个制冷剂入口和各个制冷剂出口的多个下游侧膨胀阀，以调节流入各个制冷剂的制冷剂的流量或压力 入口和从各个制冷剂出口流出的制冷剂的流量或压力。 调节上游侧膨胀阀的开口和下游侧膨胀阀的开口，使得在多个上游侧膨胀阀与多个下游侧膨胀阀之间的多个制冷剂流路中不会发生制冷剂的流量变化 通过允许制冷剂在其中流动的制冷循环中的多个制冷剂通道的侧面膨胀阀。

公开(公告)号：US08608900B2

公开(公告)日：2013-12-17

申请号：US11409183

申请日：2006-04-21

Applicant: Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

Inventor： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC: H01L21/3065 ,  C23C16/52 ,  C23C16/46 ,  C23C16/458 ,  C23C16/503 ,  C23C16/509

CPC classification number: H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.

Abstract translation: 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于在选定压力下将导热气体施加到每次形成的工件表面界面中 工件被保持在表面上，蒸发器在静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。 反应器还包括静电卡盘中的温度传感器和存储RF功率或晶片温度变化计划的存储器。 反应器还包括热模型，其能够基于来自温度传感器的测量来模拟蒸发器和表面之间的热传递;以及控制处理器，其耦合到热模型和存储器，并且响应于所述热模型和存储器控制背侧气体压力源 从所选压力的变化的模型中预测将补偿下一次调频的功率变化或实现下一个预定的晶片温度的变化。

公开(公告)号：US08598542B2

公开(公告)日：2013-12-03

申请号：US12719619

申请日：2010-03-08

Applicant: Milos Toth ,  Richard J. Young ,  Alexander Henstra ,  Alan Frank de Jong ,  Johannes Jacobus Lambertus Mulders

Inventor： Milos Toth ,  Richard J. Young ,  Alexander Henstra ,  Alan Frank de Jong ,  Johannes Jacobus Lambertus Mulders

IPC: G21G4/00

CPC classification number: H01J37/3056 ,  B81C99/0095 ,  H01J37/045 ,  H01J37/302 ,  H01J2237/0432 ,  H01J2237/04756 ,  H01J2237/2001 ,  H01J2237/24535 ,  H01J2237/30472

Abstract: Electron-beam-induced chemical reactions with precursor gases are controlled by adsorbate depletion control. Adsorbate depletion can be controlled by controlling the beam current, preferably by rapidly blanking the beam, and by cooling the substrate. The beam preferably has a low energy to reduce the interaction volume. By controlling the depletion and the interaction volume, a user has the ability to produce precise shapes.

Abstract translation: 电子束诱导的与前体气体的化学反应是通过吸附物去除控制来控制的。 可以通过控制束电流来控制吸附物消耗，优选地通过快速消隐光束，以及通过冷却衬底来控制。 光束优选具有低能量以减小相互作用体积。 通过控制耗尽和相互作用体积，用户具有产生精确形状的能力。

公开(公告)号：US08567233B2

公开(公告)日：2013-10-29

申请号：US12997480

申请日：2009-06-24

Applicant: Jun Takahashi ,  Kazuto Kawakami ,  Haruo Ohmori

Inventor： Jun Takahashi ,  Kazuto Kawakami ,  Haruo Ohmori

IPC: G01N9/00

CPC classification number: G01N23/2255 ,  H01J37/20 ,  H01J37/285 ,  H01J2237/006 ,  H01J2237/2001

Abstract: A gas charge container includes a sample holder which holds a needle-shaped material, a deutrium gas supply portion which charges a deutrium gas into the needle-shaped material held by the sample holder, and a heating portion which heats the needle-shaped material held by the sample holder. The needle-shaped material is cooled by blocking the heat generated by the heating portion after the needle-shaped material is heated by the heating portion.

Abstract translation: 气体充填容器包括保持针状材料的样品保持器，将正丁烯气体充入到由样品保持器保持的针状材料中的再循环气体供给部分和加热保持的针状材料的加热部分 由样品架。 在针状材料被加热部加热之后，通过阻止由加热部产生的热量来冷却针状材料。

公开(公告)号：US20130240353A1

公开(公告)日：2013-09-19

申请号：US13988506

申请日：2011-11-21

Applicant: Shunya Watanabe ,  Mami Konomi ,  Hisayuki Takasu ,  Atsushi Kamino

Inventor： Shunya Watanabe ,  Mami Konomi ,  Hisayuki Takasu ,  Atsushi Kamino

IPC: H01J37/305

CPC classification number: H01J37/3053 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/20207 ,  H01J2237/2802 ,  H01J2237/31745

Abstract: The sample 3 is tilted/oscillated with respect to the optical axis (Z-axis) of the ion beam 2 to repeat tilt and tilt/restoration of a processing target surface 3a of the sample 3 between a surface state in which the processing target surface 3a of the sample 3 faces a tilt axis direction (Y-axis direction) and a tilted surface state in which a portion of the processing target surface 3a on the sample stage side protrudes in the tilt axis direction (Y-axis direction) than does a portion of the processing target surface 3 on the mask side, so that the processing target surface 3a is irradiated with the ion beam 2 at a low angle, and projections/recesses 63 derived from a void 61 or a dissimilar material 62 are suppressed. Accordingly, it is possible to suppress generation of projections/recesses derived from a void or dissimilar material in fabrication of a cross section sample, and thus fabricate a sample cross section suitable for observation/analysis.

Abstract translation: 样品3相对于离子束2的光轴（Z轴）倾斜/振荡，以在样品3的处理目标表面3a之间重叠倾斜和倾斜/恢复处理目标表面 样品3的3a面向倾斜轴方向（Y轴方向）和倾斜表面状态，其中样品台侧的处理对象表面3a的一部分在倾斜轴线方向（Y轴方向）上突出于倾斜轴方向 处理对象面3的掩模侧的一部分，使得处理对象面3a以低角度照射离子束2，抑制从空隙61或异种材料62得到的突起/凹部63。 因此，在横截面试样的制造中，可以抑制从空隙或异种材料得到的突起/凹部的产生，从而制造适于观察/分析的试样截面。

公开(公告)号：US20130213439A1

公开(公告)日：2013-08-22

申请号：US13769040

申请日：2013-02-15

Applicant: FEI Company ,  Delft University of Technology

Inventor： Hendrik Willem Zandbergen ,  Pleun Dona ,  Gerardus Nicolaas Anne van Veen

IPC: H01J37/20

CPC classification number: H01J37/20 ,  H01J2237/022 ,  H01J2237/2001 ,  H01J2237/2003 ,  H01J2237/2605 ,  H01J2237/2802

Abstract: A holder assembly comprises a first and a separable second part, the first part detachable from the second part, the first part comprising a tube and an environmental cell interface and the second part comprising an electron microscope interface, as a result of which the first part can be cleaned at high temperatures without exposing the second part to said high temperature.By forming the holder assembly from detachable parts, one part can be cleaned by heating it to a high temperature of, for example, 1000° C., clogging in the tubes can be removed by reduction of carbon, while keeping the other part (often comprising mechanical fittings, ball bearing, sliders, or such like) cool. The cleaning can be enhanced by blowing, for example, oxygen or hydrogen through the tubes.

Abstract translation: 保持器组件包括第一和可分离的第二部分，第一部分可与第二部分分离，第一部分包括管和环境细胞界面，第二部分包括电子显微镜界面，结果第一部分 可以在高温下进行清洁，而不会使第二部分暴露于所述高温。 通过从可拆卸部件形成保持器组件，可以通过将其加热至例如1000℃的高温来清洁一部分，可以通过还原碳来除去管中的堵塞，同时保持另一部分（通常 包括机械配件，滚珠轴承，滑块等）冷却。 可以通过吹送例如通过管的氧气或氢气来提高清洁。

公开(公告)号：US08481969B2

公开(公告)日：2013-07-09

申请号：US13150822

申请日：2011-06-01

Applicant: Kan Ota ,  William Davis Lee

Inventor： Kan Ota ,  William Davis Lee

IPC: H01J37/18 ,  G21K5/00

CPC classification number: H01J37/3171 ,  H01J37/18 ,  H01J37/20 ,  H01J2237/002 ,  H01J2237/166 ,  H01J2237/2001 ,  H01J2237/2005 ,  H01J2237/20278 ,  H01J2237/31701

Abstract: A method for warming a rotational interface in an ion implantation environment provides a scan arm configured to rotate about a first axis and an end effector coupled to the scan arm via a motor to selectively secure a workpiece. The end effector is configured to rotate about a second axis having a bearing and a seal associated with the second axis and motor. The motor is activated, and the rotation of motor is reversed after a predetermined time or when the motor faults due to a rotation the end effector about the second axis. A determination is made as to whether the rotation of the end effector about the second axis is acceptable, and the scan arm is reciprocated about the first axis when the rotation of the end effector is unacceptable, wherein inertia of the end effector causes a rotation of the end effector about the second axis.

Abstract translation: 用于在离子注入环境中加热旋转界面的方法提供了扫描臂，该扫描臂被配置为通过电动机围绕第一轴线和与扫描臂耦合的端部执行器旋转以选择性地固定工件。 末端执行器构造成围绕具有与第二轴和马达相关联的轴承和密封件的第二轴线旋转。 电动机被激活，并且电动机的旋转在预定时间之后或当电动机由于端部执行器围绕第二轴线的旋转而故障时被反转。 确定末端执行器围绕第二轴线的旋转是否可接受，并且当端部执行器的旋转是不可接受的时，扫描臂围绕第一轴线往复运动，其中末端执行器的惯性导致旋转 末端执行器围绕第二轴。

公开(公告)号：US08426764B2

公开(公告)日：2013-04-23

申请号：US12193117

申请日：2008-08-18

Applicant: Takumi Tandou ,  Kenetsu Yokogawa ,  Masaru Izawa

Inventor： Takumi Tandou ,  Kenetsu Yokogawa ,  Masaru Izawa

IPC: H01T23/00 ,  C23C16/00

CPC classification number: H01L21/67109 ,  H01J37/32623 ,  H01J2237/2001

Abstract: The present invention provides means for controlling the temperature of a semiconductor wafer rapidly and uniformly in plane during etching processing by a large quantity of input heat by use of a refrigerating system by the heat of evaporation. A ring-shaped refrigerant passage is formed in a sample stand. Since the heat transfer rate and pressure loss of a refrigerant increase from a refrigerant supply port to a refrigerant ejection port as dryness degrees increase, these must be restricted. Therefore, constructionally, a supply refrigerant quantity is controlled to prevent the refrigerant from completely evaporating within the refrigerant passage, and the sectional areas of the refrigerant passage increase successively from a first passage to a third passage.

Abstract translation: 本发明提供了通过利用通过蒸发热使用制冷系统的大量输入热量来在蚀刻处理期间快速且均匀地控制半导体晶片的温度的装置。 环状制冷剂通道形成在样品台中。 由于制冷剂的传热速度和压力损失随着制冷剂供给口向制冷剂喷出口的增加而增加，因此必须限制。 因此，在结构上，控制供给制冷剂量以防止制冷剂在制冷剂通道内完全蒸发，并且制冷剂通道的截面积从第一通道连续升高到第三通道。

公开(公告)号：US20130009073A1

公开(公告)日：2013-01-10

申请号：US13609832

申请日：2012-09-11

Applicant: LI-NA ZHANG ,  CHEN FENG ,  KAI-LI JIANG ,  SHOU-SHAN FAN

Inventor： LI-NA ZHANG ,  CHEN FENG ,  KAI-LI JIANG ,  SHOU-SHAN FAN

IPC: H01J37/20 ,  B82Y99/00

CPC classification number: H01J37/20 ,  H01J37/26 ,  H01J2237/2001 ,  H01J2237/2007

Abstract: A transmission electron microscope (TEM) micro-grid includes a grid and a heater including at least one carbon nanotube film structure located on the grid. The micro-grid with the at least one carbon nanotube film structure prevents a floating of the sample located on the micro-grid to increase the quality of TEM images.

Abstract translation: 透射电子显微镜（TEM）微格栅包括栅格和加热器，其包括位于栅格上的至少一个碳纳米管膜结构。 具有至少一个碳纳米管膜结构的微格栅防止了位于微格栅上的样品的漂浮以提高TEM图像的质量。