公开(公告)号：US20180096828A1

公开(公告)日：2018-04-05

申请号：US15281844

申请日：2016-09-30

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/32 ,  H01J37/317 ,  C23C14/48

CPC classification number: H01J37/32862 ,  C23C14/48 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/08 ,  H01J2237/18 ,  H01J2237/31705

Abstract: An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas such as toluene to the ion source chamber. A source gas flow controller controls a flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas, forming carbon ions and atomic carbon. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. A hydrogen peroxide co-gas supply provides a predetermined concentration of hydrogen peroxide co-gas to the ion source chamber, and a hydrogen peroxide co-gas flow controller controls a flow of the hydrogen peroxide gas to the ion source chamber. The hydrogen peroxide co-gas decomposes within the ion source chamber and reacts with the atomic carbon from the molecular carbon source gas in the ion source chamber, forming hydrocarbons within the ion source chamber. An inert gas is further introduced and ionized to counteract oxidation of a cathode due to the decomposition of the hydrogen peroxide. A vacuum pump system removes the hydrocarbons from the ion source chamber, wherein deposition of atomic carbon within the ion source chamber is reduced and a lifetime of the ion source chamber is increased.

公开(公告)号：US09934945B2

公开(公告)日：2018-04-03

申请号：US15164509

申请日：2016-05-25

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu Chao Lin ,  Yuan-Ming Chiu ,  Ming-Ching Chang ,  Hsin-Yi Tsai ,  Chao-Cheng Chen

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32862 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32633 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67069

Abstract: A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.

公开(公告)号：US20180023187A1

公开(公告)日：2018-01-25

申请号：US15653587

申请日：2017-07-19

Applicant: Universidade Federal De Santa Catarina

Inventor： Cristiano BINDER ,  Aloisio Nelmo KLEIN ,  Kaline Pagnan FURLAN ,  Pedro Henrique Teshima SHIOGA ,  Renan Oss GIACOMELLI ,  Roberto BINDER

IPC: C23C14/32 ,  C23C14/06 ,  H01J37/36 ,  C23C14/02

CPC classification number: C23C14/32 ,  C23C8/20 ,  C23C8/24 ,  C23C8/30 ,  C23C14/022 ,  C23C14/0605 ,  C23C16/0272 ,  C23C16/26 ,  C23C28/00 ,  C23C28/021 ,  C23C28/023 ,  C23C28/046 ,  H01J37/32862 ,  H01J37/36 ,  H01J2237/332

Abstract: The present invention describes a process for coating conductive component in a plasma reactor and a conductive component coating, wherein the process includes the steps of cleaning, mechanical support deposition, topographic modification by plasma bombardment, chemical support layer deposition and amorphous carbon layer deposition (Diamond-Like Carbon). In one embodiment, the process is in single cycle. The present invention pertains to the fields of Materials Engineering, Physics and Chemistry.

公开(公告)号：US09875915B2

公开(公告)日：2018-01-23

申请号：US14975998

申请日：2015-12-21

Applicant: Tokyo Electron Limited

Inventor： Yudai Ito ,  Kazuya Dobashi ,  Misako Saito ,  Shigeyoshi Kojima ,  Hideki Nishimura

IPC: H01L21/67 ,  C23C16/44 ,  H01J37/32

CPC classification number: H01L21/67017 ,  C23C16/4407 ,  H01J37/32862

Abstract: Disclosed is a method for removing metal contamination present on an inner wall of a fluorine-based resin used in a chemical liquid supply line that supplies a chemical liquid to a workpiece. The method includes bringing some or all of a cleaning material reactive to a metal forming the metal contamination into a gaseous state; supplying the gaseous cleaning material to the chemical liquid supply line; and removing the metal contamination by reacting the gaseous cleaning material with the metal contamination present on the inner wall of the fluorine-based resin used in the chemical liquid supply line.

公开(公告)号：US20170323768A1

公开(公告)日：2017-11-09

申请号：US15145750

申请日：2016-05-03

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Xuesong LU ,  Andrew V. LE ,  Jang Seok OH ,  Xinhai HAN

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32862 ,  H01J2237/334 ,  H01J2237/335

Abstract: Embodiments of the disclosure include methods for in-situ chamber cleaning efficiency enhancement process for a plasma processing chamber utilized for a semiconductor substrate fabrication process. In one embodiment, a method for performing a plasma treatment process after cleaning a plasma process includes performing a cleaning process in a plasma processing chamber in absent of a substrate disposed thereon, subsequently supplying a plasma treatment gas mixture including at least a hydrogen containing gas and/or an oxygen containing gas into the plasma processing chamber, applying a RF source power to the processing chamber to form a plasma from the plasma treatment gas mixture, and plasma treating an interior surface of the processing chamber.

公开(公告)号：US09812298B2

公开(公告)日：2017-11-07

申请号：US14313200

申请日：2014-06-24

Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) ,  Universite Joseph Fourier—Grenoble 1

Inventor： Jacques Henri Pelletier ,  Ana Lacoste ,  Alexandre Bes ,  Stephane Jean Louis Bechu ,  Jerome Sirou

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/44

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  H01J37/32871 ,  H01L21/67069

Abstract: The invention concerns a device and a process, the device being a cleaning device utilizing a dry chemical means assisted by plasma from a reactor (10) containing an unwanted deposit on its walls and at least one other polarizable surface (12), characterized in that it comprises means (13, 14) for positively polarizing one or each of the polarizable surfaces relative to the reactor walls maintained at a reference potential.

公开(公告)号：US09733561B2

公开(公告)日：2017-08-15

申请号：US14097381

申请日：2013-12-05

Applicant: Samsung Display Co., Ltd.

Inventor： Tae-Jong Kim

IPC: G03F1/00 ,  G03F1/82 ,  B08B7/00 ,  B08B7/04 ,  H01J37/32

CPC classification number: G03F1/0092 ,  B08B7/0092 ,  B08B7/04 ,  G03F1/82 ,  H01J37/32862

Abstract: Provided are a method and apparatus for cleaning organic materials accumulated on a mask used in a process of depositing organic materials. The apparatus includes a plasma generating unit, a cleaning chamber connected to the plasma generating unit and accommodating the mask therein, a gas injection port disposed within the cleaning chamber configured to inject the plasma, and a cooling device disposed on a first surface of the mask opposite to an opposite surface of the mask facing the gas injection port.

公开(公告)号：US09721802B2

公开(公告)日：2017-08-01

申请号：US14290856

申请日：2014-05-29

Applicant: Applied Materials, Inc.

Inventor： Subhash Deshmukh ,  Joseph Johnson

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/3065 ,  H01J37/32 ,  C23F4/00 ,  H01L21/311 ,  H01L21/3213 ,  H05K3/02 ,  H01L21/268 ,  H01L21/02

CPC classification number: H01L21/3065 ,  C23F4/00 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32862 ,  H01J2237/3343 ,  H01L21/02071 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/32136 ,  H05K3/027

Abstract: An apparatus configured to remove metal etch byproducts from the surface of substrates and from the interior of a substrate processing chamber. A plasma is used in combination with a solid state light source, such as an LED, to desorb metal etch byproducts. The desorbed byproducts may then be removed from the chamber.

公开(公告)号：US20170204522A1

公开(公告)日：2017-07-20

申请号：US15328413

申请日：2015-07-24

Applicant: KOBUS SAS

Inventor： Julien VITIELLO ,  Jean-Luc DELCARRI ,  Fabien PIALLAT

IPC: C23F1/00 ,  C07C49/167

CPC classification number: C23F1/00 ,  C07C45/00 ,  C07C49/167 ,  C23C14/564 ,  C23C16/4405 ,  C23G5/00 ,  H01J37/32862

Abstract: A method for removing a metallic deposit disposed on a surface in a chamber, including the following steps: a) a step of oxidizing the metallic deposit; b) a step of injecting chemical species adapted to volatilized the oxidized metallic deposit, the step b) being implemented during at least a part of step a); and in step b), the chemical species are injected according to a sequence of pulses.

公开(公告)号：US20170200588A1

公开(公告)日：2017-07-13

申请号：US15335074

申请日：2016-10-26

Applicant: Applied Materials, Inc.

Inventor： Olivier JOUBERT ,  Olivier LUERE ,  Vedapuram S. ACHUTHARAMAN

IPC: H01J37/32 ,  C23C14/10 ,  H01L21/687 ,  C23C16/40 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32495 ,  C23C4/00 ,  C23C4/02 ,  C23C4/10 ,  C23C4/134 ,  C23C16/401 ,  C23C16/4404 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/67069 ,  H01L21/68721

Abstract: Methods are disclosed for etching a substrate. The method includes preferentially coating cover ring relative other chamber components in the processing chamber, while under vacuum, and while a substrate is not present in the processing chamber. The substrate is subsequently etched the processing chamber. After etching, the interior of the processing chamber is cleaned after the substrate has been removed.