公开(公告)号：US20230140367A1

公开(公告)日：2023-05-04

申请号：US18050114

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Viraj Madhiwala ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Michael Givens ,  Andrea llliberi ,  Vincent Vandalon

IPC: C23C16/40 ,  H01J37/32 ,  C23C16/455

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.

公开(公告)号：US20230077088A1

公开(公告)日：2023-03-09

申请号：US17900065

申请日：2022-08-31

Applicant: ASM IP Holding B.V.

Inventor： Arpita Saha ,  David de Roest ,  Michael Givens ,  Charles Dezelah ,  Monica Thukkaram ,  Daniele Piumi

IPC: G03F1/22

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the absorber layer underlying an extreme ultraviolet (EUV) photoresist are disclosed. Exemplary methods include forming the photoresist absorber layer or underlayer with an oxide of a high atomic number (z) element having an EUV cross section (σα) of greater than 2×106 cm2/mol and then forming the EUV photoresist over the high-z underlayer.

公开(公告)号：US20220068634A1

公开(公告)日：2022-03-03

申请号：US17407839

申请日：2021-08-20

Applicant: ASM IP Holding B.V.

Inventor： Shaoren Deng ,  Andrea Illiberi ,  Daniele Chiappe ,  Eva Tois ,  Giuseppe Alessio Verni ,  Michael Givens ,  Varun Sharma ,  Chiyu Zhu ,  Shinya Iwashita ,  Charles Dezelah ,  Viraj Madhiwala ,  Jan Willem Maes ,  Marko Tuominen ,  Anirudhan Chandrasekaran

IPC: H01L21/02 ,  H01L21/285 ,  B08B3/08 ,  B08B5/00 ,  C23C16/02 ,  C11D11/00 ,  C11D7/26 ,  C11D7/24 ,  C11D7/02

Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

公开(公告)号：US20210301394A1

公开(公告)日：2021-09-30

申请号：US17216249

申请日：2021-03-29

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Giuseppe Alessio Verni ,  Shaoren Deng ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Michael Givens

IPC: C23C16/40 ,  B01J31/12 ,  C23C16/455

Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.

公开(公告)号：US20200328285A1

公开(公告)日：2020-10-15

申请号：US16849144

申请日：2020-04-15

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20190390338A1

公开(公告)日：2019-12-26

申请号：US16563473

申请日：2019-09-06

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC: C23C16/455

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

公开(公告)号：US10002936B2

公开(公告)日：2018-06-19

申请号：US14919180

申请日：2015-10-21

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/44 ,  H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  C23C16/06 ,  C23C16/34 ,  H01L29/51

CPC classification number: H01L29/4966 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/32051 ,  H01L29/517

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20160376704A1

公开(公告)日：2016-12-29

申请号：US14752712

申请日：2015-06-26

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC: C23C16/455 ,  C23C16/06

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

Abstract translation: 公开了形成包括金属碳化物材料的薄膜结构的方法，以及包括金属碳化物材料的结构和装置。 示例性结构包括使用两种或更多种不同工艺（例如两种或更多种不同的前体）形成的金属碳化物材料，其能够调整各种金属碳化物材料性质，包括电阻率，电流泄漏和功函数。

公开(公告)号：US20160358772A1

公开(公告)日：2016-12-08

申请号：US14729510

申请日：2015-06-03

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Fu Tang ,  Michael Givens ,  Petri Raisanen ,  Jan Willem Maes

IPC: H01L21/02 ,  H01L29/10 ,  H01L29/20 ,  H01L23/31 ,  H01L29/16

CPC classification number: H01L21/02247 ,  H01L21/02112 ,  H01L21/02205 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/2807 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/20 ,  H01L29/518

Abstract: In some embodiments, a semiconductor surface having a high mobility semiconductor may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.

Abstract translation: 在一些实施方案中，具有高迁移率半导体的半导体表面可以有效地通过氮化钝化，优选使用肼，肼衍生物或其组合。 该表面可以是晶体管沟道区的半导体表面。 在一些实施例中，在半导体表面处形成半导体表面氧化物层，并且通过在表面形成半导体氮氧化物层来实现钝化，其中氮化对表面氧化物产生氮以形成氧氮化物层。 半导体氧化物层可以通过原子层沉积（ALD）沉积，并且氮化也可以作为ALD的一部分进行。

公开(公告)号：US09177784B2

公开(公告)日：2015-11-03

申请号：US14183187

申请日：2014-02-18

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Mohith Verghese

IPC: H01L21/285 ,  H01L21/336 ,  H01L21/31 ,  H01L21/66 ,  H01L21/02 ,  H01L29/51 ,  H01L29/78 ,  H01L21/28

CPC classification number: H01L21/02233 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/0223 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L22/12 ,  H01L22/20 ,  H01L29/511 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517

Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.

Abstract translation: 提供了与在衬底上形成膜堆叠的方法相关的实施例。 一个示例性方法包括将基底暴露于活化氧物质并将基底的暴露表面转化为第一介电材料的连续单层。 该示例性方法还包括在第一介电材料的连续单层上形成第二介电材料，而不将基板暴露于空气断裂。