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    Apparatus with selected fill gas
    53.
    发明申请
    Apparatus with selected fill gas 有权
    具有选定填充气体的装置

    公开(公告)号：US20050193814A1

    公开(公告)日：2005-09-08

    申请号：US10793382

    申请日：2004-03-04

    Applicant: John Geen ,  John Martin

    Inventor： John Geen ,  John Martin

    IPC: B29C31/00

    CPC classification number: H01L23/20 ,  B81B7/0058 ,  B81B2201/025 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An inertial sensor has an interior filled with a relatively low viscosity fill gas. To that end, the inertial sensor has a housing forming the noted interior, and a movable component within the interior. The inertial sensor also has the noted fill gas within the interior. The fill gas has a viscosity that is less than the viscosity of nitrogen under like conditions. For example, when subjected to the same temperatures and pressures, the fill gas has a viscosity that is less than the viscosity of nitrogen.

    Abstract translation: 惯性传感器具有填充有相对低粘度的填充气体的内部。 为此，惯性传感器具有形成所述内部的壳体和内部的可移动部件。 惯性传感器在内部还具有注明的填充气体。 填充气体的粘度比同样条件下的氮的粘度小。 例如，当经受相同的温度和压力时，填充气体的粘度小于氮的粘度。

    Method for producing surface micromechanical structures, and sensor
    54.
    发明授权
    Method for producing surface micromechanical structures, and sensor 失效
    生产表面微机械结构和传感器的方法

    公开(公告)号：US06867061B2

    公开(公告)日：2005-03-15

    申请号：US10467216

    申请日：2002-02-04

    Applicant: Frank Fischer ,  Wilhelm Frey ,  Lars Metzger

    Inventor： Frank Fischer ,  Wilhelm Frey ,  Lars Metzger

    IPC: B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/00 ,  H01L27/20 ,  H01L29/82 ,  H01L29/84

    CPC classification number: G01P15/125 ,  B81B2201/025 ,  B81C1/00619 ,  B81C2201/0112 ,  G01P15/0802 ,  G01P2015/0814

    Abstract: A method is described for producing surface micromechanical structures having a high aspect ratio, a sacrificial layer being provided between a substrate and a function layer, trenches being provided by a plasma etching process in the function layer, at least some of these trenches exposing surface regions of the sacrificial layer. To increase the aspect ratio of the trenches, an additional layer is deposited on the side walls of the trenches in at least some sections, but not on the exposed surface regions of the sacrificial layer. In addition, a sensor is described, in particular an acceleration sensor or a rotational rate sensor.

    Abstract translation: 描述了一种用于生产具有高纵横比的表面微机械结构的方法，牺牲层设置在衬底和功能层之间，沟槽通过功能层中的等离子体蚀刻工艺提供，这些沟槽中的至少一些暴露表面区域 的牺牲层。 为了增加沟槽的纵横比，在至少一些部分中的沟槽的侧壁上而不是在牺牲层的暴露的表面区域上沉积附加层。 此外，描述了传感器，特别是加速度传感器或转速传感器。

    Method of adding mass to MEMS structures
    55.
    发明申请
    Method of adding mass to MEMS structures 失效
    向MEMS结构添加质量的方法

    公开(公告)号：US20040219340A1

    公开(公告)日：2004-11-04

    申请号：US10426148

    申请日：2003-04-29

    Applicant: Motorola Inc.

    Inventor： Andrew C. McNeil ,  Gary Li ,  Gary J. O'Brien

    IPC: B32B015/04

    CPC classification number: B81B3/0078 ,  B81B2201/025 ,  G01P15/08 ,  G01P15/0802 ,  G01P15/0888 ,  G01P2015/0814 ,  Y10T428/24917

    Abstract: A proof mass (11) for a MEMS device is provided herein. The proof mass comprises a base (13) comprising a semiconductor material, and at least one appendage (15) adjoined to said base by way of a stem (21). The appendage (15) comprises a metal (17) or other such material that may be disposed on a semiconductor material (19). The metal increases the total mass of the proof mass (11) as compared to a proof mass of similar dimensions made solely from semiconductor materials, without increasing the size of the proof mass. At the same time, the attachment of the appendage (15) by way of a stem (21) prevents stresses arising from CTE differentials in the appendage from being transmitted to the base, where they could contribute to temperature errors.

    Micro inertia sensor and method of manufacturing the same
    57.
    发明申请
    Micro inertia sensor and method of manufacturing the same 失效
    微惯性传感器及其制造方法

    公开(公告)号：US20030183009A1

    公开(公告)日：2003-10-02

    申请号：US10330710

    申请日：2002-12-27

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Seung Do An ,  Kyoung Soo Kim ,  Ji Man Cho

    IPC: B32B003/10 ,  G01P015/00

    CPC classification number: B81C1/00301 ,  B81B2201/025 ,  B81B2207/095 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/038 ,  G01C19/5783 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10T428/24322

    Abstract: The present invention provides a micro inertia sensor and a method of manufacturing the same, the micro inertia sensor includes a lower glass substrate; a lower silicon including a first border, a first fixed point and a side movement sensing structure; an upper silicon including a second border, a second fixed point being connected to a via hole, in which a metal wiring is formed, on an upper side, and an sensing electrode, which correspond to the first border, the first fixed point and the side movement sensing structure; a bonded layer by a eutectic bonding between the upper silicon and the lower silicon; and a upper glass substrate, being positioned on an upper portion of the upper silicon, for providing the via hole on which an electric conduction wiring is formed, thereby aiming at the miniaturization of the product and the simplification of the process.

    Abstract translation: 本发明提供一种微惯性传感器及其制造方法，所述微惯性传感器包括下玻璃基板; 包括第一边界的下硅，第一固定点和侧移检测结构; 包括第二边界的上硅，在上侧连接有形成有金属布线的通孔的第二固定点和与第一边界相对应的第一固定点和第二边界的感测电极 侧运动感测结构; 通过上硅和下硅之间的共晶键合的键合层; 以及上玻璃基板，其位于上硅的上部，用于提供其上形成导电布线的通孔，从而瞄准产品的小型化和简化工艺。

    Semiconductor accelerometer having a cantilevered beam with a triangular or pentagonal cross section
    58.
    发明授权
    Semiconductor accelerometer having a cantilevered beam with a triangular or pentagonal cross section 失效
    半导体加速度计具有三角形或五边形横截面的悬臂梁

    公开(公告)号：US5594172A

    公开(公告)日：1997-01-14

    申请号：US540613

    申请日：1990-06-20

    Applicant: Toshiro Shinohara

    Inventor： Toshiro Shinohara

    IPC: G01P15/08 ,  G01P15/12

    CPC classification number: G01P15/0802 ,  B81C1/00595 ,  B81B2201/025 ,  B81B2203/0118 ,  B81C2201/0133 ,  G01P2015/0828

    Abstract: A semiconductor accelerometer, including a weight and a cantilevered beam formed in a silicon semiconductor substrate as a frame having a (100) surface, and a strain sensing device formed in a surface portion near a support portion of the cantilevered beam, the silicon cantilevered beam having a triangular cross section defined by one (100) surface and two (111) surfaces or a pentagonal cross section defined by one (100) surface, two (110) surfaces and two (111) surfaces. A method for producing the semiconductor accelerometer is also disclosed.

    Abstract translation: 一种半导体加速度计，其包括形成在具有（100）表面的框架的硅半导体衬底中的重量和悬臂梁，以及形成在悬臂梁的支撑部附近的表面部分中的应变感测装置，所述硅悬臂梁 具有由一个（100）表面和两个（111）表面限定的三角形横截面或由一个（100）表面，两个（110）表面和两个（111）表面限定的五边形横截面。 还公开了一种用于制造半导体加速度计的方法。

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